纯LaAlO_3和Ce~(3 )∶LaAlO_3单晶的吸收谱和透过谱研究

本文采用中频感应提拉法成功生长了LaAlO3 和Ce3 ∶LaAlO3 晶体。沿生长方向即a轴方向切割、抛光后得到实验样品。测试了氢气退火前后纯LaAlO3 和Ce3 ∶LaAlO3 从 190nm到 2 5 0 0nm的吸收谱和透过谱。测试结果表明 :纯LaAlO3 晶体在 196～ 2 2 0nm处出现宽带吸收 ,氢气退火后此一波段的吸收系数明显降低 ;未退火的Ce∶LaAlO3晶体在 196～ 2 0 9nm ,2 4 6nm ,314nm出现明显的吸收波段 ,氢气退火后其吸收谱发生显著变化 ,在 198,2 0 6 ,2 14 ,2 4 6和 314nm处出现对应于Ce3 的 4f- 5d的跃迁吸收 ;Ce∶LaAlO3 晶体较之纯LaAlO3 晶体在红外区的透过率要高 ;氢气退火后 ,Ce∶LaAlO3 晶体和纯LaAlO3 晶体在红外区的透过率下降     

硅酸钇晶体的生长、腐蚀形貌和光谱性能研究

本文采用中频感应提拉法成功生长了未掺杂的Y2SiO5(YSO)晶体,经过定向、切割、抛光后得到样品.经过腐蚀后,利用大视场显微镜和扫描电镜在样品表面上观察到了菱形和四边形的位错蚀坑、小角晶界和包裹物等缺陷;测试了经过氢气、空气退火前后,辐照前后YSO晶体的透过谱,结果表明:YSO晶体的吸收边大约在202nm,氢气退火后在200～300nm波段透过率增加,空气退火后透过率显著降低;辐照后,氢气退火的样品在200～500nm波段透过率显著降低.     

Tm:YAG晶体的生长及吸收特性

采用提拉法生长出三种掺Tm3+浓度的Tm:YAG晶体.运用ICP-AEs测定Tm3+离子在Tm:YAG晶体中的分凝系数约为1.室温下测定了Tm:YAG晶体在190～900nm之间的吸收光谱及1000～4500cm-1范围内退火前后的红外吸收谱.测试结果表明,退火后3365cm-1处OH-1离子的吸收峰完全消失.说明在空气气氛下对Tm:YAG晶体进行退火处理改善了晶体的性能.     

非真空密闭条件下的Ce3+: LiYF4晶体生长

本文报道了氟化物激光晶体Ce3+: LiYF4的坩埚下降法生长工艺.以高纯氟化物LiF、YF3和CeF3为初始试剂,按照LiF: YF3: CeF3 = 51.5: 47.5: 1.0的物质的量比配料,经高温氟化处理合成严格无水的Ce3+: LiYF4多晶料.将Ce3+: LiYF4多晶料密封于铂坩埚中,添加少量聚四氟乙烯粉末,可避免氟化物熔体的氧化与挥发,从而在非真空条件下实现Ce3+: LiYF4晶体的坩埚下降法生长,成功生长出尺寸达28 mm×70 mm的无色透明完整单晶.采用XRD、差热/热重分析、透射光谱和荧光光谱对Ce3+: LiYF4单晶基本性质的进行表征.结果表明,该晶体在320~3000 nm区域内的光透过率达90;以上,晶体在297 nm处有一强吸收峰;荧光光谱显示晶体在紫外光区310 nm、325 nm处有两个强发射峰.     

15;Yb:YAlO3晶体的生长和光谱研究

本文采用中频感应提拉法成功生长了Yb掺杂浓度高达15;的YAlO3晶体,晶体尺寸约30mm×120mm,晶体质量较好.对生长的晶体沿垂直于b轴方向进行了切割,将样品分别在氢气和氧气中退火后进行了吸收和荧光测试.在氧气中退火后的样品具有较大的峰值吸收宽度,但同时也增加了基线的吸收系数.分析表明在940nm泵浦下,1011nm和1037nm将是实现激光输出的候选波长.     

Nd3+:Na3La9O3(BO3)8晶体生长和光谱性能

采用顶部籽晶法生长Nd3+:Na3La9O3(BO3)8 晶体.在室温下测试了吸收光谱、发射光谱和荧光寿命.应用Judd-Ofelt理论评价了Nd3+:Na3La9O3(BO3)8晶体的光谱性能.812 nm处较宽的吸收峰适合AlGaAs LD泵浦的吸收.分别计算了Nd3+离子的唯象强度、谱线强度、辐射寿命、荧光分支比和荧光量子效率.     

温梯法生长76mm Ce:YAG闪烁晶体的研究

首次采用温度梯度法(TGT)成功生长了直径为76mm高光学质量的Ce:YAG高温闪烁晶体,采用ICP-AES测试了Ce离子在Ce:YAG晶体中的分凝系数约为0.082.在室温下,测试了原生态Ce:YAG晶体的吸收光谱和X射线激发发射光谱(XEL).吸收光谱显示了Ce3+离子的3个特征吸收带,对应的中心波长分别为223nm,340nm及460nm;XEL发射谱表明Ce:YAG的发射峰为550nm,能与硅光二极管有效地耦合.     

退火温度对Ce:YAlO3单晶体的影响研究

将生长完成的Ce:YAlO2单晶体在1680℃的高温氢气气氛下退火,晶体颜色、吸收光谱和荧光光谱相对于未退火的样品均发生了变化.本文对此现象进行了分析.研究结果表明,1680℃高温氢气退火后,Ce:YAP晶体中同时包含YAP相和YAG相.     

温度梯度法生长氟化钙晶体

用温度梯度法成功生长了直径75mm、完整、透明的氟化钙晶体,对晶体进行了TG-DTA测试分析,确定了其熔点为1413.5℃,并测试了晶体从190nm的紫外波段到40000nm的红外波段的透过率,发现从中紫外波段到红外波段氟化钙晶体的透过率已经能满足各种应用的要求,但在远紫外波段和真空紫外波段(246nm以下)氟化钙晶体的透过率需要进一步提高.     

高温闪烁晶体Ce∶YAP的生长研究

Ce∶YAP晶体具有优良的闪烁性能,其主要特点是光产额大,衰减时间短,发射峰与光电倍增管的接收范围相匹配,在γ射线探测、核医学等方面有着广阔的应用前景.我们用提拉法生长了不同掺杂浓度的Ce∶YAP晶体,成功地解决了在生长过程中出现的晶体开裂及孪晶问题,并对晶体生长过程中的爬料、纯YAP晶体着色等现象作了讨论.X射线激发发射谱表明晶体的发射峰在388nm,吸收测试则显示晶体在254nm、366nm处有两个吸收峰.     

N掺杂LaAlO3电子结构的第一性原理研究

采用第一性原理计算N掺杂LaAlO3的稳定性、电子结构和磁学性质.计算结果表明:N掺杂LaAlO3的结构稳定;而且从生成焓数值看,替位掺杂比间隙掺杂结构更稳定.形成能计算结果表明,还原环境比氧化环境更适合N掺杂,并且在还原环境下,NH3作为N源生成替位掺杂的LaAlO3-x Nx的形成能最小,即最容易形成替位掺杂.N替代LaAlO3中的O原子和位于LaAlO3晶胞间隙均产生铁磁性,其磁性均源于掺杂N-2p电子与体系价带顶O-2p电子间的p-p耦合作用.     

LaAlO3晶体点缺陷的电子结构和磁性的第一性原理研究

利用密度泛函理论计算了LaAlO3晶体点缺陷的电子结构和磁学性质.结果表明,LaAlO3中La,Al空位缺陷具有铁磁性,O空位缺陷没有磁性.La,Al空位磁性源于体系中所有O原子2p轨道的部分极化.     

高品质LaAlO3-SrTiO3系陶瓷微波介电性能的研究

采用固相反应法制备了高品质(1-x)LaAlO3-xSrTiO3(x=0.54 ～0.63)系列微波介质陶瓷,研究了SrTiO3含量对LaAlO3-SrTiO3系陶瓷结构与性能的影响.结果表明:当x取0.54 ～ 0.63时,LaAlO3与SrTiO3形成了赝立方钙钛矿结构固溶体;在最佳工艺条件下,试样结构致密,无气孔,晶界清晰;随着x值的增大,陶瓷的体积密度由5.45g/cm3降至5.28 g/cm3,εr由38.9增大到约48.35,τf由-12×10-6/℃增大至.19×10-6/℃,品质因数Q·f则由75057 GHz降至48629 GHz.当x=0.6时,材料在1550℃下保温3h获得最佳的微波介电性能:εr=45.27,Q·f=57677 GHz,τf=+1×10-6/℃.     

B2O3掺杂对0.69CaTiO3-0.31LaAlO3微波介质陶瓷的性能影响

采用固相反应法,研究了B2O3对0.69CaTiO3-0.31LaAlO3微波介质陶瓷烧结性能与介电性能的影响.通过X射线衍射分析表明,B2O3的引入未改变陶瓷的晶相组成.添加适量B2O3的可有效的降低0.69CaTiO3-0.31LaAlO3介电陶瓷的烧结温度,增强致密性并提高介电性能.在1500℃烧结温度,B2O3掺杂量为0.3wt;时,0.69CaTiO3-0.31LaAlO3陶瓷获得最佳介电性能:εr≈45.4,Qf≈52800 GHz,τf≈8.78 ppm/℃.     

高温超导薄膜衬底材料LaAlO3单晶的超光滑表面抛光研究

本文以化学机械抛光为手段,以原子力显微镜(AFM)为工具,对高温超导薄膜衬底材料LaAlO3单晶的超光滑表面抛光进行研究.既观察到了由传统光学表面向超光滑表面过渡的过程,又观察到了超光滑表面加工的结果-表面的本征化.显示了超光滑表面抛光对外延衬底表面的重要性.     

V2O5掺杂对0.6SrTiO3-0.4LaAlO3微波介质陶瓷结构与性能的影响

采用固相反应法,研究了V2O5添加量与0.6SrTiO3-0.4LaAlO3(简称6ST-4LA)陶瓷烧结性能及介电性能之间的变化关系.结果表明:少量V2O5的引入未改变陶瓷的晶相组成,主晶相仍为SrTiO3基固溶体,适量添加V2O5不仅能显著降低6ST-4LA陶瓷的烧结温度,而且能增大其介电常数和品质因数(Q·f),调节谐振频率温度系数τf;随着V2O5添加量的继续增加,有第二相SrVO3出现并逐渐增多.当V2O5添加量为0.10wt;,1450 ℃烧结时,6ST-4LA陶瓷获得最佳微波介电性能:εr=46.46,Q·f=59219 GHz,τf=3×10-6 /℃.     

Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition

The room temperature epitaxial growth of CeO₂ on lattice matched (001) LaAlO₃ substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po₂) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electron microscopy with selected‐area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO₂ can be achieved at room temperature under Po₂ less than 2 × 10⁻³ Torr. The best quality of grown film is obtained under Po₂ = 2 × 10⁻⁵ Torr and degraded under Po₂ = 2 × 10⁻⁶ Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO₂ and LAO is confirmed to be (001)CeO₂ //(001)LAO, [100]_CeO2//[110]_LAO and [010]_CeO2//[10]_LAO. No obvious reduction reaction occurred, from Ce⁺⁴ turned into Ce⁺³ states, as reducing oxygen partial pressure during growth by PLD.     

Crystal and molecular structures of three trimethylamine-boron halide adducts: (CH3)3NBCl3, (CH3)3NBBr3, and (CH3)3NBI3

X-ray diffraction data from single crystals of the trimethylamine complexes of the three boron halides, BCl₃, BBr₃, and BI₃, lead to aP2₁/m monoclinic cell containing two molecules for each complex. The unit cell dimensions area = 6·68(1),b = 10·247(3),c = 6·502(6) Å, =116·2(1)° (chloro);a = 6·86(1),b = 10·612(4),c = 6·737(6) Å, = 115·8(1)° (bromo);a = 6·92(2),b = 10·86(1),c = 7·147(6) Å, = 93·9(1)° (iodo). The structures were solved by three-dimensional sharpened Patterson functions and show only the chloro and bromo compounds to be isomorphous. Refinement of 662,718 and 954 observed reflexions for the chloro, bromo and iodo complexes, respectively, using anisotropic thermal parameters yielded conventionalR factors of 0·045, 0·087 and 0·054.The molecules are shown to possess a B—N dative bond, a staggered conformation, and effective 3m (C _3v) symmetry. Average C—N bond lengths are 1·52(1) Å for all three complexes. Boronhalogen bond lengths average 1·864(4), 2·04(2) and 2·28(2) Å, while B—N bond distances are 1·609(6), 1·60(2) and 1·58(3) Å, respectively, for the chloro through iodo compounds. Bond angles are approximately tetrahedral with the C—N—C angle decreasing by several degrees in the Cl Br I series.Based in part on a dissertation submitted by Patty H. Clippard to the Rackham School of Graduate Studies of the University of Michigan, January 1969 in partial fulfillment of the requirements of the Ph.D. Degree.     

Infrared vibrational Modes in Tl3SbS3, Tl3AsS3, and Tl3AsSe3 crystals

Reflectivity spectra of Tl₃SbS₃, Tl₃AsS₃, and Tl₃AsSe₃ crystals have been investigated in the wave number range 50–600 cm⁻¹ for the polarizations E∥c and E⟂c. The fundamental phonon parameters, the limiting dielectric constants ϵ_∞ and ϵ_S and the reflectivity spectra contours have been calculated by using classical dispersion relations for both E∥c and E⟂c configurations. The Szigeti effective charges and the relative ion charges of As, Tl, Sb, Se, S anions and cations have been calculated in dependence on the incident light polarization.     

The structures of three trimethylarsine-boron trihalide adducts: (CH3)3AsBCl3, (CH3)3AsBBr3, and (CH3)3AsBI3

An X-ray structure analysis of three trimethylarsine-boron trihalide adducts has been undertaken. Crystals of (CH₃)₃AsBCl₃ and (CH₃)₃AsBBr₃ are monoclinic with space groupP2₁/m (No. 11) withZ=2 while those of (CH₃)₃AsBI₃ are orthorhombic with space groupPnma (No. 62) withZ=4. For (CH₃)₃AsBCl₃,a=6.497(3) Å,b=10.735(3) Å,c=7.070(2) Å,=111.8(3)°,V=458.4(3) ų,R=0.0343. For (CH₃)₃AsBBr₃,a=6.672(4) Å,b=11.135(7) Å,c=7.199(4) Å,=111.5(1)°,V=497.7(5) ų,R=0.0434. For (CH₃)₃ÅsBI₃,a=13.113(7) Å,b=11.733(5) Å,c=7.387(3) Å,V=1136.5(5) ų,R=0.0329. The As-B bond lengths are 2.065(6), 2.04(1), and 2.03(1) Å, respectively, for the chloride, bromide, and iodide. These and other structural parameters are discussed with reference to previous predictions based on vibrational spectra and previous structural studies on the trimethyl-phosphine and trimethylamine adducts.