高强度钢丝残余应力的研究进展

回顾了近年来以珠光体钢丝为代表的高强度钢丝残余应力的数值模拟及其相关试验研究进展,主要介绍常规X射线衍射、中子衍射及同步辐射X射线衍射技术在钢丝残余应力分析中的应用,对残余应力的来源、测量原理及其结果进行了讨论;简述了残余应力对钢丝性能,如拉伸、应力松驰和环境促进断裂性能等指标的影响,同时对通过改变残余应力分布实现钢丝性能优化的主要工艺进行了介绍.     

残余应力测定的基本知识第二讲 X射线应力测定的基本原理

用X射线衍射技术来测定材料中的残余应力(或外载应力与残余应力的代数和)称为X射线应力测定.其特点是:①属于物理方法,不改变试件的原始应力状态;②理论严谨,方法成熟;③测定的是表面应力,故对材料的表层状态比较敏感,必须对测试点作恰当的表面处理;④根据特点③,可以借助于电解抛光等手段测定应力沿层深的分布.     

陶瓷—金属连接残余应力X射线衍射测试方法

用大功率的ＭＸＰ１８－ＨＦ Ｘ射线衍射仪测量了金属与陶瓷连接处的残余应力分布。实验表明，该衍射仪Ｘ射线强度高，光斑细，适用于材料残余应力分布的精确测量。通过用它对金属－陶瓷界面应力梯度的测量，为残余应力的缓解提供了依据。     

薄膜X射线应力分析

由于Ｘ射线薄膜衍射几何的特点，致使薄膜Ｘ射线应力分析的精度很骓达到常规应力分析水平。本文采用真空充阑、内标校正的途径来提高薄膜Ｘ射线应力分析的精度。     

两种残余应力测定方法的研究和比较

先用X射线衍射法再用盲孔法测定了同一试样的残余应力,对测试结果进行了分析比较。结果表明：对于残余应力分布不随深度改变的情况,两者结果一致;但对于其他情况,两种方法得到的结果不一致。通过测试残余应力沿试样深度的分布和从原理上比较两种测试方法的不同,得出盲孔法的测试结果受深层残余应力分布影响,而X射线衍射法的测试结果不受其影响。     

碳化硅单晶材料残余应力检测技术研究进展

SiC单晶材料被称为第三代宽带隙半导体材料,凭借强度高、化学性质稳定、抗干扰能力强等优势被广泛应用于军工、核能和电子等领域。然而SiC单晶在制备、加工和使用过程中,往往会存在残余应力,这严重影响着单晶材料的质量和使用寿命。为准确评估晶体质量、服役过程中的可靠性和材料寿命,有必要对单晶材料的残余应力及分布规律进行深入研究。本文分析了SiC单晶中残余应力的来源,归纳总结了单晶材料应力检测技术的研究现状,并对SiC单晶材料应力检测方面的未来发展趋势进行了展望。     

碳纤维复合材料界面残余应力的X射线衍射分析

根据碳纤维的晶体学特点,提出了利用X射线衍射技术分析碳纤维/树脂基复合材料界面残余应力的新方法。通过在环氧树脂基体中引入膨胀单体,改变界面残余应力,对本文提出的方法进行了验证     

线切割单晶硅表面损伤的研究

利用台阶仪、扫描电镜（ＳＥＭ）和Ｘ射线双晶衍射仪,研究了线切割硅片和内圆切割硅片的表面切割损伤和损伤层厚度。实验指出线切割硅片表面粗糙度大,外表面损伤大,但损伤层的厚度要小于常规内圆切割硅片。初步讨论了影响线切割硅片表面损伤的原因     

Synthesis,crystal structure and thermal analysis of a new stilbazolium salt crystal

A new organic crystal of 4-N, N-dimethylamino-4′-N′-methyl-stilbazolium benzene sulfonate (DASBS) was synthesized and characterized for the first time. It is a derivative of 4-N, N-dimethylamino-4′-N′-methyl-stilbazolium tosylate (DAST) with the benzene sulfonate replacing p-toluenesulfonate. Single crystal XRD demonstrated that the crystal structure of DASBS·H₂O was triclinic. The thermal analysis of this new crystal was also conducted, and the melting point was obtained to be 232°C.     

Mechanical characterization of single crystal silicon and UV-LIGA nickel thin films using tensile tester operated in AFM

This paper describes the mechanical characteristics of microscale single crystal silicon (SCS) and UV‐LIGA nickel (Ni) films used for microelectromechanical systems (MEMS). A compact tensile tester, operated in an atomic force microscope (AFM), was developed for accurate evaluation of Young's modulus, tensile strain and tensile strength of microscale SCS and UV‐LIGA Ni specimens. SCS specimens with nominal dimensions of 20 μm in thickness, 50 μm in width and 600 μm in length were prepared by a conventional photolithography and etching process. UV‐LIGA Ni specimens, with a thickness of 15 μm, a width of 50 μm and a length of 600 μm in nominal dimensions, were also fabricated by electroplating using a UV thick photoresist mould. All specimens have line patterns on their specimen gauge section to measure axial elongation under tensile loading. The SCS specimens showed a linear stress–strain response and fractured in a brittle manner, whereas the UV‐LIGA Ni specimens showed elastic–inelastic deformation behaviour. Young's modulus of SCS and UV‐LIGA Ni specimens obtained from tensile tests averaged 169.2 GPa and 183.6 GPa, respectively, close to those of bulk materials. However, the tensile strength of both materials showed a larger value than the bulk materials: 1.47 GPa for the SCS and 0.98 GPa for the Ni specimens. Yield stress and breaking elongation of UV‐LIGA Ni specimens were also quite different from those of the bulk Ni because of the specimen size effect on inelastic properties.     

Characterization of single crystal silicon and electroplated nickel films by uniaxial tensile test with in situ X-ray diffraction measurement

In this study, mechanical properties of micron‐thick single crystalline silicon (Si) and electroplated nickel (Ni) films at intermediate temperatures are investigated by means of X‐ray diffraction (XRD) tensile testing. The developed tensile test technique enables us to directly measure lateral (out‐of‐plane) elastic strain of microscale crystalline specimen using XRD during tensile loading, and determines Young's modulus, Poisson's ratio and tensile strength of the Si and Ni specimens. The specimens, measuring 10 μm thick, 300 μm wide and 3 mm long, are prepared through a conventional micro‐machining process, and the ultraviolet lithographie galvanoformung abformung (UV‐LIGA) process including a molding and an electroplating. The Si specimens, showing brittle fracture at room temperature (R.T.), have average Young's modulus and Poisson's ratio of 169 GPa and 0.35, respectively, in very good agreement with analytical values. The Ni specimens, showing ductile fracture, have those of 190 GPa and 0.24, lower than bulk coarse grained Ni. Young's moduli of both the Si and Ni specimens decrease with increasing temperature, but Poisson's ratios are independent of temperature. The influence of specimen size on elastic‐plastic properties of the specimens is discussed.     

A new method to evaluate the quality of single crystal Cu by an X-ray diffraction butterfly pattern method

A new method for the evaluation of the quality of an Ohno continuous cast (OCC) Cu single crystal by X-ray diffraction (XRD) butterfly pattern was brought forward. Experimental results show that the growth direction of single crystal Cu is inclined from both sides of the single crystal Cu rod to the axis and is axially symmetric. The degree of deviation from the [100] orientation from the crystal axis is less than 5° with a casting speed 10–40 mm/min. The orientation of single crystal Cu does not have a fixed direction but is in a regular range. Moreover, the orientation of stray grains in the single crystal Cu is random from continuous casting.     

Silica based polishing of {100} and {111} single crystal diamond

Diamond is one of the hardest and most difficult to polish materials. In this paper, the polishing of {111} and {100} single crystal diamond surfaces by standard chemical mechanical polishing, as used in the silicon industry, is demonstrated. A Logitech Tribo Chemical Mechanical Polishing system with Logitech SF1 Syton and a polyurethane/polyester polishing pad was used. A reduction in roughness from 0.92 to 0.23 nm root mean square and 0.31 to 0.09 nm rms for {100} and {111} samples respectively was observed.     

CdZnTe单晶的机械抛光及其表面损伤层的测定

研究了CdZnTe单晶片的机械抛光工艺.采用SiO2和MgO进行分步机械抛光后的晶片光亮平整,在光学显微镜下观察没有划伤,采用New View5000TM测得抛光后晶片的表面粗糙度Ra为8.752nm.采用X射线摇摆曲线的半峰宽表征了表面损伤程度.通过分析不同时间腐蚀后晶片的质量和半峰宽值,计算出机械抛光产生的表面损伤层厚度约为26.7μm.     

基于p型多孔硅的一维光子晶体的微结构分析

经由阳极氧化实现了p型硅基的60周期(120层)反射结构,并在此基础上成功制作了基于一维光子晶体的全反射镜,其中心反射波长位于1.6μm左右,反射率几乎为100%的禁带带宽约为0.25μm.     

[Ag(PPh_3)_2(CH_3COO)]_2·3H_2O的合成和晶体结构

将醋酸银和三苯基磷按1∶2摩尔比例进行反应得到化合物Ag(PPh3)2(CH3COO)]2,采用红外光谱、核磁共振、元素分析和单晶X射线衍射的方法,对其结构进行了表征.晶体结构解析结果显示,配合物属单斜晶系,空间群C2/c,a=44.286 8',b=13.269 6',c=24.997 0',α=90.000°,β=105.573°,γ=90.000°,Z=8,R=0.052 0,wR2=0.132 4.     

Orientation dependence of fracture toughness measured by indentation methods and its relation to surface energy in single crystal silicon

Fracture toughness of silicon crystals has been investigated using indentation methods, and their surface energies have been calculated by molecular dynamics (MD). In order to determine the most preferential fracture plane at room temperature among the crystallographic planes containing the 〈001〉, 〈110〉 and 〈111〉 directions, a conical indenter was forced into (001), (110) and (111) silicon wafers at room temperature. Dominant {110}, {111} and {110} cracks were introduced from the indents on (001), (011) and (111) wafers, respectively. Fracture occurs most easily along {110}, {111} and {110} planes among the crystallographic planes containing the 〈001〉, 〈011〉 and 〈111〉 directions, respectively. A series of surface energies of those planes were calculated by MD to confirm the orientation dependence of fracture toughness. The surface energy of the {110} plane is the minimum of 1.50 Jm⁻² among planes containing the 〈001〉 and 〈111〉 directions, respectively, and that of the {111} plane is the minimum of 1.19 Jm⁻² among the planes containing the 〈011〉 direction. Fracture toughness of those planes was also derived from the calculated surface energies. It was shown that the K _IC value of the {110} crack plane was the minimum among those for the planes containing the 〈001〉 and 〈111〉 directions, respectively, and that K _IC value of the {111} crack plane was the minimum among those for the planes containing the 〈011〉 direction. These results are in good agreement with that obtained conical indentation.