共查询到19条相似文献,搜索用时 78 毫秒
1.
1962年清山哲郎提出ZnO薄膜的气敏特性后,研究目标较集中于以ZnO,SnO_2,γ-Fe_2O_3和α-Fe_2O_3为基质的氧化物半导体陶瓷材料,并已有商品出售.氧化铁基气敏材料与氧化锌、氧化锡相比,它有无需添加贵金属催化剂便可达到实用气敏灵敏度的优点.我们也曾从催化活性、磁学性能和气敏特性等方面,对α-Fe_2O_3基气敏材料的气敏机制进行了研究,得到满意的结果.本文旨在探讨α-Fe_2O_3-SnO_2配比和氧化铁粒度与气敏性能间关系,并且也浅析了气敏机制,以期为此复合材料实用化提供依据. 相似文献
2.
3.
采用共沉淀方法,以一定摩尔比的可溶性钙盐和铟盐为源物质,以氢氧化物作为沉淀剂,制备出了CaO-In2O3复合氧化物粉末.借助差热-热重(DTA-TG)分析可知CaO-In2O3的热变化过程,即在248℃附近由氢氧化物前驱物分解成氧化物,在340℃附近是氧化物的相转变,340℃以后为两氧化物的化合.利用X-射线衍射(XRD)分析知CaO-In2O3的晶体结构为立方结构.对CaO-In2O3的气敏性能研究表明,由CaO-In2O3粉体制成的旁热式厚膜气敏元件无需掺杂,对丙酮、乙醇、乙酸具有较高的灵敏度. 相似文献
4.
5.
6.
采用共沉淀方法,以一定摩尔比的可溶性钙盐和铟盐为源物质,以氢氧化物作为沉淀剂,制备出了CaO-In2O3复合氧化物粉末。借助差热-热重(DTA-TG)分析可知CaO-In2O3的热变化过程,即在248℃附近由氢氧化物前驱物分解成氧化物,在340℃附近是氧化物的相转变,340℃以后为两氧化物的化合。利用X-射线衍射(XRD)分析知CaO-In2O3的晶体结构为立方结构。对CaO-In2O3的气敏性能研究表明,由CaO-In2O3粉体制成的旁热式厚膜气敏元件无需掺杂,对丙酮、乙醇、乙酸具有较高的灵敏度。 相似文献
7.
Fe2O3气敏材料的制备及掺杂研究 总被引:6,自引:3,他引:6
作者以不同铁盐与NaOH反应,用共沉淀法磷选出较好的γ-Fe2O3气敏材料;再通过多种掺杂,研究杂质对材料灵敏度的影响,寻找γ-Fe2O3对CO,H2,LPG灵敏的适宜掺杂剂,以促进γ-Fe2O3气敏元件的实用化。同时,作者又通过对掺杂物热力学数据的研究,初步发现了一条选择合宜掺杂剂的规律。 相似文献
8.
9.
10.
采用共沉淀方法,以一定摩尔比的可溶性锌盐和铟盐为源物质,以氢氧化物作为沉淀剂,制备出了具有尖晶石结构的ZnIn2O4复合氧化物粉末.借助差热-热重(DTA-TG)分析可知ZnIn2O4的热变化过程,即在248℃附近由氢氧化物前驱物分解成氧化物,在340℃附近是氧化物的相转变,340℃以后为两氧化物的化合.利用X-射线衍射(XRD)分析知ZnIn2O4的晶体结构为尖晶石结构.对ZnIn2O4的气敏性能研究表明,由ZnIn2O4粉体制成的旁热式厚膜气敏元件无需掺杂,对乙醇、丙酮、氢气具有较高的灵敏度. 相似文献
11.
12.
《Calphad》2021
In the present study, the viscosity experimental data for the FetO-containing silicate melts under oxidation atmosphere, which Fe3+ and Fe2+ co-exist were critically evaluated and model parameters related to Fe2O3 were optimized to best reproduce all reliable experimental viscosity data. The charge compensation effect on the viscosity for the systems containing Fe2O3 was modeled with the Gibbs energies for LiFe, NaFe, KFe and CaFe2 “associate species” formation. The viscosities of a wide compositional and temperature range of binary, ternary and multicomponent melts containing Fe2O3–FeO–SiO2–Al2O3–CaO–MgO–Li2O–Na2O–K2O–MnO–Ti2O3–TiO2 were well reproduced by the present model within the scatter of experimental data. 相似文献
13.
14.
15.
掺硼ZnO压敏电阻器的研究 总被引:1,自引:0,他引:1
中压ZnO压敏电阻器是ZnO压敏电阻器的研究难点之一。通过对硼加入量的研究,很好地解决了这一骓题。试验发现,随着硼加入量的增加,电位梯度降低,热处理的作用变得比较明显,而热处理对ZnO陶瓷的稳定性及大电流冲击特性很有帮助,用X衍射分析法揭示了掺硼系ZnO压敏陶瓷内部结构,由此获得了性能良好的中压ZnO压敏电阻器。 相似文献
16.
通过静电吸附的方式在金红石相掺钨二氧化钛(Ti0.7W0.3O2)表面组装了铁卟啉(FeTCPP)大环分子,合成了具有仿生功能的FeTCPP/Ti0.7W0.3O2纳米复合材料,并将其修饰于玻碳电极上,制备了一种新型的无酶H2O2传感器.利用紫外-可见吸收光谱(UV-Vis)和电化学阻抗谱(EIS)对纳米复合材料进行了表征,并利用循环伏安(CV)法研究了传感器对H2O2的电催化还原性能.结果表明:该传感器对H2O2有良好的电催化效果,在4.998×10-7~1.194×10-5 mol/L范围内H2O2的浓度与电流响应呈线性关系(R=0.997),检测限为1.105 ×l0-8mol/L(S/N =3). 相似文献
17.
Both gamma radiation and ozone sensing properties of mixed oxides in the form of thin films are explored. External effects,
such as radiation and ozone, cause defects in the materials it interacts with and, consequently, it causes changes in their
properties. These changes manifest themselves as the alterations in both the electrical and the optical parameters, which
are being measured and employed for dosimetry sensor development. An Edwards E306A thermal coating system was used for In2O3:ZnO:SnO2 (90%:5%:5%) films deposition. For the electrical properties measurements, Cu electrodes were manufactured on the glass substrate
via thermal evaporation of Cu; then AZ5214 photoresist was spin-coated over it and exposed to ultraviolet (UV) light via the
acetate, containing the desired electrodes patterns. After the exposure, the substrate was placed in Electrolube PDN250ML
developer solution and then rinsed in water and placed in the etching solution of SEMO 3207 fine etch crystals to reveal the
electrode pattern. The optical properties of In2O3:ZnO:SnO2 thin films were explored using CARY 1E UV–visible spectrophotometer. The values of the optical band gap Eopt are estimated in the view of the Mott and Davis’ theory. Doping of In2O3 with 5% ZnO and 5% SnO2 dramatically changes the overall structure of the film and thus affects its sensing to gamma radiation and ozone. Mixing
metal oxides in certain proportions provides a tool for controlling the sensors response.
This paper is an extended version of the SPIE-6589-45 paper, presented at SPIE Microsystem Technologies Conference, Las Palmas,
2–4 May 2007. 相似文献
18.