Enhanced Piezoelectric Properties and Thermal Stability in the (K0.5Na0.5)NbO3:ZnO Lead‐Free Piezoelectric Composites

The piezoelectric properties of (K_0.5Na_0.5)NbO₃ (KNN) are normally enhanced by chemical substitutions or doping to form solid solutions. In this study, we report that the piezoelectric properties of KNN and thermal stability of piezoelectric coefficient d₃₃ can be both enhanced by forming the composite of KNN:ZnO. The d₃₃ of KNN:0.2ZnO can be improved to 110 pC/N by introducing the ZnO nanoparticles, which is better than the pure KNN (d₃₃ = 85 pC/N). The Curie temperature (T_C = 407°C) remains well comparable to the pure KNN (T_C = 408°C). Furthermore, the thermal stability of both remanent polarization (P_r) and piezoelectric parameter (d₃₃) is improved. The enhanced thermal stability could be related to the induced built‐in electric field or the enhanced sinterability by the addition of ZnO. The present results may help to optimize the piezoelectric properties of lead‐free materials by forming composite.     

High performance lead-free Na0.5K0.5NbO3 piezoelectric ceramics obtained via oscillatory hot-pressing

Lead-free Na_0.5K_0.5NbO₃ (KNN) piezoelectric ceramics is regarded as a potential candidate for PZT material, while high performance is difficult to be obtained due to its poor sinterability and non-stoichiometric component. In this work, oscillatory pressure-assisted hot pressing (OPAHP) is utilized to fabricate KNN ceramics with high density. The KNN ceramics sintered at 860 °C exhibits superior performance with piezoelectric parameter (d₃₃) of 142 pC/N, electromechanical coupling factors (k_p) of 0.41, and relative permittivity (ε^T₃₃/ε₀) of 472–620. Additionally, hardness and flexural strength are measured as 3.55 GPa and 99.13 MPa, respectively. This work indicates that OPAHP technique is effective for fabricating KNN piezoelectric ceramics with high performance.     

Composition,microstructure and electrical properties of K0.5Na0.5NbO3 ceramics fabricated by cold sintering assisted sintering

In this paper, cold sintering was served as a forming method to assist the conventional sintering, which is so-called cold sintering assisted sintering (CSAS) method. Lead-free K_0.5Na_0.5NbO₃ piezoelectric ceramics were prepared by the CSAS method, and the effects of the different procedures on the sintering behaviors and electrical properties of KNN ceramics were studied. Compared with conventional sintering (CS), cold sintering process can induce potassium-rich phase on the KNN particle surface, and remarkably increase both the green and sintering density of KNN ceramics. Meanwhile, the potassium-rich phase would transform to K₄Nb₆O₁₇ second phase on the grain surface, and subsequently suppress the volatilization of potassium element. The sinterability and electrical properties were greatly improved, and KNN piezoelectric ceramics with high performance can be manufactured in a wide sintering temperature range (1055 °C–1145 °C), which proves that CSAS has the potential to be an excellent sintering technique for producing KNN based ceramics.     

Compositional inhomogeneity and segregation in (K0.5Na0.5)NbO3 ceramics

In this report, the effects of the calcination temperature of (K_0.5Na_0.5)NbO₃ (KNN) powder on the sintering and piezoelectric properties of KNN ceramics have been investigated. KNN powders are synthesized via the solid-state approach. Scanning electron microscopy and X-ray diffraction characterizations indicate that the incomplete reaction at 700 °C and 750 °C calcination results in the compositional inhomogeneity of the K-rich and Na-rich phases while the orthorhombic single phase is obtained after calcination at 900 °C. During the sintering, the presence of the liquid K-rich phase due to the lower melting point has a significant impact on the densification, the abnormal grain growth and the deteriorated piezoelectric properties. From the standpoint of piezoelectric properties, the optimal calcination temperature obtained for KNN ceramics calcined at this temperature is determined to be 800 °C, with piezoelectric constant d₃₃=128.3 pC/N, planar electromechanical coupling coefficient k_p=32.2%, mechanical quality factor Q_m=88, and dielectric loss tan δ=2.1%.     

New Lead‐Free (1 − x)(K0.5Na0.5)NbO3–x(Bi0.5Na0.5)ZrO3 Ceramics with High Piezoelectricity

For enhancing the piezoelectric properties of ceramics (Bi_0.5Na_0.5)ZrO₃ (BNZ) was used to partially substitute (K_0.5Na_0.5)NbO₃ (KNN). The addition of BNZ changes the symmetry of KNN ceramics from orthorhombic to tetragonal, and finally to rhombohedral phase. A new phase boundary with both rhombohedral–orthorhombic and orthorhombic–tetragonal phase transitions near room temperature is identified for KNN–0.050BNZ ceramics, where optimum electrical properties were obtained: d₃₃ = 360 pC/N, k_p = 32.1%, ε_r = 1429, tanδ = 3.5%, and T_C = 329°C. The results indicated a new method for designing high‐performance lead‐free piezoelectric materials.     

Optical and Microwave Dielectric Properties of Phase Pure (K0.5Na0.5)NbO3 Thin Films Deposited by RF Magnetron Sputtering

(K_0.5Na_0.5)NbO₃ (KNN) thin films have been deposited onto Pt/Ti/SiO₂/Si and quartz substrates by RF magnetron sputtering. The films were deposited at 400°C with the variation in oxygen mixing percentage (OMP) ratio from 0% to 100% and annealed at 700°C in oxygen atmosphere. The crystallinity of the films is found to be increased with increased OMP. Dielectric properties of the films were examined over the frequency range from 1 kHz to 1 MHz and the temperature range of 30°C to 400°C. The Curie temperature of the films was found to be in the range 369°C–373°C. For the first time, the split postdielectric resonator (SPDR) method was used to measure the microwave (10–20 GHz) dielectric properties of KNN thin films. The optical properties of as‐deposited and annealed KNN thin films were investigated by means of transmittance spectra. The optical bandgap is calculated by using the Tauc relation, and found to be in the range 4.34–4.40 eV and 4.29–4.37 eV for the as‐deposited and annealed films, respectively. The refractive index (n_700nm) of the films found to be in the range 1.98–2.01 and 1.99–2.07 for as‐deposited and annealed films, respectively. The refractive index dispersion is analyzed by using Wemple–DiDomenico (W–D) single‐oscillator model. The effect of annealing and OMP on the refractive index, packing density and W–D parameters has been investigated. The average single oscillator energy (E_o) and dispersion energies (E_d) of the annealed KNN thin films are in the range of 6.17–7.16 eV and 18.77–22.19 eV, respectively. AC‐conductivity of the annealed films was analyzed by using double power law. Ag/KNN/Pt thin films followed the ohmic conduction (J ∝ E^α, where α ~1) and the low leakage current density obtained for the deposited at 100% O₂ is 3.14 × 10^?5 A/cm² at 50 kV/cm.     

Large Piezoresponse and Ferroelectric Properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–Bi(Mg0.5Ti0.5)O3 Thin Films Prepared by Chemical Solution Deposition

Bulk ceramic 72.5 mol%(Bi_0.5Na_0.5)TiO₃–22.5 mol%(Bi_0.5K_0.5)TiO₃–5 mol%Bi(Mg_0.5Ti_0.5)O₃ (BNT–BKT–BMgT) has previously been reported to show a large high‐field piezoelectric coefficient (d₃₃* = 570 pm/V). In this work, the same composition was synthesized in thin film embodiments on platinized silicon substrates via chemical solution deposition. Overdoping of volatile cations in the precursor solutions was necessary to achieve phase‐pure perovskite. An annealing temperature of 700°C resulted in good ferroelectric properties (P_max = 52 μC/cm² and P_r = 12 μC/cm²). Quantitative compositional analysis of films annealed at 650°C and 700°C indicated that near ideal atomic ratios were achieved. Compositional fluctuations observed through the film thickness were in good agreement with the existence of voids formed between successive spin‐cast layers, as observed with electron microscopy. Bipolar and unipolar strain measurements were performed via double laser beam interferometry and a high effective piezoelectric coefficient (d_33,f) of approximately 75 pm/V was obtained.     

Green and red upconversion luminescence of Er-doped K0.5Na0.5NbO3 ceramics

Er³⁺ doped K_0.5Na_0.5NbO₃ (KNN) lead-free piezoelectric ceramics were synthesized by the solid-state reaction method. The upconversion emission properties of Er³⁺ doped KNN ceramics were investigated as a function of Er³⁺ concentration and incident pumping power intensity. Bright green (~555 nm) and red (670 nm) upconversion emission bands were obtained under 980 nm excitation at room temperature, which are attributed to (²H_11/2, ⁴S_3/2)→⁴I_15/2 and ⁴F_9/2→⁴I_15/2 transitions, respectively. The upconversion emission intensity can be adjusted by changing Er³⁺ concentration, and the mechanism of upconversion processes involve not only a two-photon absorption but also a three-photon absorption. In addition to the admirable intrinsic piezoelectric properties of KNN, this kind of material may have potential application as a multifunctional device by integrating its upconversion and piezoelectric property.     

The structure and electrical properties of Ca0.6(Li0.5Bi0.5-xPrx)0.4Bi2Nb2O9 high-temperature piezoelectric ceramics

Ca_0.6(Li_0.5Bi_0.5-xPr_x)_0.4Bi₂Nb₂O₉ ceramics were prepared via a solid-state reaction method. The effect of the Pr content on the structural and electrical properties was systematically investigated. X-ray diffraction (XRD) combined with Rietveld refinement and X-ray photoelectron spectroscopy (XPS) demonstrated that a moderate amount of Pr³⁺ can be incorporated into the NbO₆ octahedra, while excess Pr³⁺ ions probably enter into the (Bi₂O₂)²⁺ layers, thus resulting in an increase in the tetragonality of the crystal structure. The introduction of Pr suppressed the generation of oxygen vacancies and improved the preferential grain growth along the c-axis, which might be responsible for enhancing the resistivity (ρ ~ 10⁶ Ω cm at 600°C). The replacement of Pr³⁺ for A-site Bi³⁺ enhanced the piezoelectric property, and the piezoelectric constant d₃₃ increased from 13.8 pC/N to 16.3 pC/N. The high depolarization temperature (up to 900°C) implied that CBN-LBP100x ceramics are promising candidates for ultrahigh-temperature application.     

Bi(Zn2/3Nb1/3)O3–(K0.5Na0.5)NbO3 High‐Temperature Lead‐FreeFerroelectric Ceramics with Low Capacitance Variation in a Broad Temperature Usage Range

The xBi(Zn_2/3Nb_1/3)O₃–(1?x)(K_0.5Na_0.5)NbO₃ (abbreviated as xBZN–(1?x)KNN) ceramics have been synthesized using the conventional solid‐state sintering method. The phase structure, dielectric properties and “relaxorlike” behavior of the ceramics were investigated. The 0.03BZN–0.97KNN ceramics show a broad and stable permittivity maximum near 2000 and lower dielectric loss (≤5%) at a broad temperature usage range (100°C–400°C) and the capacitance variation (ΔC/C_150°C) is maintained smaller than ±15%. The 0.03BZN–0.97KNN ceramics only possess the diffuse phase transition and no frequency dispersion of dielectric permittivity, which indicates that 0.03BZN–0.97KNN ceramics is a high temperature “relaxorlike” ferroelectric ceramics. These results indicate that 0.03BZN–0.97KNN ceramics are excellent promising candidates for preparing high‐temperature multilayer ceramics capacitors.     

Structure and electrical properties of perovskite layer (1−x)Sr2Nb2O7‐x(Na0.5Bi0.5)TiO3 high‐temperature piezoceramics

The structure and electrical properties of perovskite layer structured (PLS) (1?x)Sr₂Nb₂O₇‐x(Na_0.5Bi_0.5)TiO₃ (SNO‐NBT) prepared by solid‐state reaction method are investigated. The addition of NBT is beneficial to speed up mass transfer and particle rearrangement during sintering, leading to better sinterability and higher bulk density up to 96.8%. The solid solution limit x in the SNO‐NBT system is below 0.03, over which Ti⁴⁺ is preferable to aggregate and results in the generation of secondary phase. After the modification by NBT, all SNO‐NBT ceramics have a Curie temperature T_c up to over 1300°C and piezoelectric constant d₃₃ about 1.0 pC/N. The breakthrough of piezoelectricity can mainly be attributed to rotation and distortion of oxygen octahedron as well as higher poling electric field resulting from the improved bulk density. This study not only demonstrates how to improve piezoelectricity by NBT addition, but also opens up a new direction to design PLS piezoceramics by introducing appropriate second phase.     

Preparation and Electric Properties of Bi0.5Na0.5TiO3–Bi(Al0.5Ga0.5)O3 Lead‐Free Piezoceramics

A new lead‐free BNT‐based piezoelectric ceramics of (1 ? x)Bi_0.5Na_0.5TiO₃–xBi(Al_0.5Ga_0.5)O₃ (x = 0, 0.02, 0.03, 0.04, and 0.05) were synthesized using a conventional ceramic fabrication method. Their structures and electrical properties were investigated. All the samples show a typical ferroelectric P(E) loops and S(E) curves at room temperature. The optimal properties are obtained at the composition of the x = 0.03. The substitution of Bi(Al_0.5Ga_0.5)O₃ enhances piezoelectric constant and increases Curie temperature from 58 pC/N and 310°C of pure BNT to 93 pC/N and 325°C of the x = 0.03. The temperature‐dependent P(E) loops and S(E) curves of 0.97BNT–0.03BAG indicate that phase transition from ferroelectric to antiferroelectric takes place over a very wide temperature region from 80°C to 180°C. The results show that the introduction of BAG improves the electrical properties of BNT.     

Electrical properties of lead-free 0.98(Na<Subscript>0.5</Subscript>K<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript>-0.02Ba(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript> piezoelectric ceramics by optimizing sintering temperature

Lead-free 0.98(Na_0.5K_0.5)NbO₃-0.02Ba(Zr_0.52Ti_0.48)O₃ [0.98NKN-0.02BZT] ceramics were fabricated by the conventional mixed oxide method with sintering temperature at 1,080°C to 1,120°C. The results indicate that the sintering temperature obviously influences the structural and electrical properties of the sample. For the 0.98NKN-0.02BZT ceramics sintered at 1,080°C to 1,120°C, the bulk density increased with increasing sintering temperature and showed a maximum value at a sintering temperature of 1,090°C. The dielectric constant, piezoelectric constant [d ₃₃], electromechanical coupling coefficient [k _p], and remnant polarization [P _r] increased with increasing sintering temperature, which might be related to the increase in the relative density. However, the samples would be deteriorated when they are sintered above the optimum temperature. High piezoelectric properties of d ₃₃ = 217 pC/N, k _p = 41%, dielectric constant = 1,951, and ferroelectric properties of P _r = 10.3 μC/cm² were obtained for the 0.98NKN-0.02BZT ceramics sintered at 1,090°C for 4 h.     

The unusual case of plastic deformation and high dislocation densities with the cold sintering of the piezoelectric ceramic K0.5Na0.5NbO3

K_0.5Na_0.5NbO₃ (KNN) can be readily densified using the cold sintering process, but despite observing high relative permittivity, the ferroelectric hysteresis is strongly suppressed along with a major suppression in the all-important piezoelectric properties. In this study, KNN is fabricated using a NaOH+KOH transient flux under a uniaxial pressure of 400 MPa and heating to 300 °C for 2 h to drive densification to 93% theoretical. It is only after a secondary heat treatment that we observe improvements of the ferroelectric hysteresis and piezoelectric properties. From a detailed structural-property-processing study using analytical transmission electron microscopy (TEM), X-ray line broadening and high field dielectric characterization methodologies we conclude that there is an unusual in-situ plastic deformation process that takes place in addition to the densification under the cold sintering process. High densities of dislocations within grains were observed that lead to multiple pinning sites that impact both the intrinsic and extrinsic contributions to the high field dielectric and piezoelectric properties. Annealing significantly reduced the dislocation density in the highly defective crystallites, observed directly from the TEM and from the sharpening of the X-ray diffraction peaks, resulting in piezoelectric and ferroelectric properties that approached those of conventionally sintered KNN.     

Luminescence and electrical properties of Eu-modified Bi0.5Na0.5TiO3 multifunctional ceramics

The Eu³⁺-modified Bi_0.5Na_0.5TiO₃ (BNT) ceramics have been fabricated by the solid-state reaction method. The impact of Eu³⁺ doping on the structure, photoluminescence, and electrical properties has been studied by XRD, SEM, PL spectra, and LCR meter. X-ray diffraction analysis reveals that the crystal structure of the samples is well matched with the trigonal perovskite, and the optimal temperature of presintering is 880°C. The Eu³⁺-doped BNT ceramics show excellent red fluorescence at 614 nm corresponding to the ⁵D₀→⁷F₂ transition of Eu³⁺ under 466 nm excitation and relatively long fluorescence lifetime. The BNT-0.02Eu ceramic density is up to 5.68 g/cm³ and the relative density is up to 94.6% with sintering temperature 1075°C. The piezoelectric constant (d₃₃) of samples has been significantly improved up to 110 pC/N by Eu³⁺ doping. The BNT-0.03Eu ceramic presintered at 880°C and sintered at 1050°C has good dielectric properties and excellent luminescence properties. Eu³⁺-doped BNT ceramics make it potential applications for novel integrated electro-optical and multifunctional devices.     

Excellent piezoelectric properties of PNN-PHT ceramics sintered at low temperature with CuO addition

Multilayer components with excellent piezoelectric performance have been developed for fulfilling the requirement of new-generation electromechanical devices and systems. Multilayering of the piezoelectric ceramic requires good sinterability preferentially at lower temperature. In this study, copper (II) oxide (CuO) was utilized as the sintering additive to increase the sinterability of 0.49Pb(Ni_1/3Nb_2/3)O₃–0.51Pb(Hf_0.3Ti_0.7)O₃ (PNN-PHT) ceramics at low temperature, and simultaneously enhance the piezoelectric and dielectric properties of the ceramics. The results demonstrated that the addition of CuO influenced the sintering behavior, grain growth, and piezoelectric properties of the PNN-PHT ceramics. A ternary high performance piezoelectric PNN-PHT ceramic sintered at 1050°C with 0.5 mol% CuO exhibited excellent properties as follows: d₃₃ = 912 pC N⁻¹ and ε_r = 6665.     

Structural evolution of the R‐T phase boundary in KNN‐based ceramics

Although a rhombohedral‐tetragonal (R‐T) phase boundary is known to substantially enhance the piezoelectric properties of potassium‐sodium niobate ceramics, the structural evolution of the R‐T phase boundary itself is still unclear. In this work, the structural evolution of R‐T phase boundary from ?150°C to 200°C is investigated in (0.99?x)K_0.5Na_0.5Nb_1?ySb_yO₃–0.01CaSnO₃–xBi_0.5K_0.5HfO₃ (where x = 0‐0.05 with y = 0.035, and y = 0‐0.07 with x = 0.03) ceramics. Through temperature‐dependent powder X‐ray diffraction (XRD) patterns and Raman spectra, the structural evolution was determined to be Rhombohedral (R, <?125°C)→Rhombohedral + Orthorhombic (R + O, ?125°C to 0°C)→Rhombohedral + Tetragonal (R + T, 0 °C to 150°C)→dominating Tetragonal (T, 200°C to Curie temperature (T_C)) → Cubic (C, >T_C). In addition, the enhanced electrical properties (e.g., a direct piezoelectric coefficient (d₃₃) of ~450 ± 5 pC/N, a conversion piezoelectric coefficient () of ~580 ± 5 pm/V, an electromechanical coupling factor (k_p) of ~0.50 ± 0.02, and T_C~250°C), fatigue‐free behavior, and good thermal stability were exhibited by the ceramics possessing the R‐T phase boundary. This work improves understanding of the physical mechanism behind the R‐T phase boundary in KNN‐based ceramics and is an important step toward their adoption in practical applications.     

Enhanced insulating and piezoelectric properties of BiFeO3-BaTiO3-Bi0.5Na0.5TiO3 ceramics with high Curie temperature

BiFeO₃-BaTiO₃ ceramics are promising lead-free piezoelectric ceramics due to their high piezoelectric properties and high Curie temperature, but their high leakage current density makes the poling difficult. In this study, a decreased leakage current density by three orders of magnitude was obtained in Bi_0.5Na_0.5TiO₃ (BNT) added 0.67BiFeO₃-0.33BaTiO₃ (BF-BT) ceramics. It was found that the largely improved insulating properties benefit from the reduced oxygen vacancies and weak reduction of Fe³⁺ to Fe²⁺ as confirmed by photoluminescence and X-ray photoelectron spectroscopy measurements, thereby contributing to high-temperature and high-field poling. In addition, the introduction of BNT leaded to increased grain size. Due to the grown grains as well as reduced oxygen vacancies and Fe²⁺, enhanced insulating and optimal piezoelectric properties with P_r = 24.2 µC/cm², d₃₃ = 183 pC/N, k_p = 0.28, and T_C = 467°C were achieved in BF-BT-0.05BNT ceramics.     

Low-Temperature Sintering of (K0.5Na0.5)NbO3 Piezoelectric Ceramics

(K_0.5Na_0.5)NbO₃ piezoelectric ceramics can be sintered at a temperature as low as 750 °C for 5 h by incorporating Li₂CO₃ + Bi₂O₃ + ZnO as the sintering aid, whereas the conventional sintering temperature is around 1,100 °C. The optimal “soft” piezoelectric properties are obtained for ceramics sintered at 850 °C for 5 h. The dielectric permittivity (ε), piezoelectric coefficient (d ₃₃), electromechanical coupling (k _p) and mechanical quality factors (Q _m) of (K, Na)NbO₃ modified with 5.5 wt% sintering aids are 1,436, 90 pC/N, 0.3 and 10, respectively. These values are similar to the values obtained for (K_0.5Na_0.5)NbO₃ ceramics sintered above 1,100 °C. The underlying mechanism for abrupt change of dielectric permittivity is explained.     

Phase structure and piezoelectric properties of Ca- and Ba-doped K1/2Na1/2NbO3 lead-free ceramics

Piezoelectric lead-free ceramics, K_1/2Na_1/2NbO₃ (KNN) modified with alkaline-earth (AE) Ca²⁺ and Ba²⁺, have been prepared by the conventional solid-state reaction method. The effect of doping level on sinterability and functional response of KNN was studied. In this way, discs doped with 0 to 2 mol% of Ba²⁺ and Ca²⁺ were sintered at 1125 °C for 2 h. It was observed that AE changed drastically the microstructure and grain size of KNN when it was added in concentrations higher than 0.5 mol%. Addition of 0.5 mol% of Ba²⁺ and Ca²⁺ produced a softening effect in the ferroelectric properties of the material, while samples prepared with higher contents than 0.5 mol% showed poor properties.