Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

We propose and demonstrate a technique for tailoring the emission bandwidth of /spl sim/1.3 /spl mu/m quantum dot superluminescent light-emitting diodes. A broadening of the emission is achieved by incorporating the InAs quantum dot layers in InGaAs quantum wells of different indium compositions. These structures exhibit a broader and flatter emission compared to a simple dot-in well structure comprised of wells of identical indium composition.     

Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10–400 K are presented. It is shown that, at low-temperatures T < 100 K, the injection of holes into the quantum wells occurs from localized acceptor states. The low-temperature injection of electrons into p-GaN occurs due to quasi-ballistic transport in the region of multiple quantum wells. An increase in temperature leads to an increase in the current which is governed by thermally activated hole and electron injection from the allowed bands of GaN.     

Nitride-based cascade near white light-emitting diodes

An InGaN-GaN blue light-emitting diode (LED) structure and an InGaN-GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near white LED. In order to avoid thyristor effect, we choose a large 2.1×2.1 mm² LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near white light emission with Commission International de l'Eclairage color coordinates x=0.2 and y=0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a cascade near white LED were 4.2 mW, 81 l m/W, and 9000 K, respectively     

Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells

An AlGaN-based deep ultraviolet laser diode with convex quantum wells structure is proposed. The advantage of using a convex quantum wells structure is that the radiation recombination is significantly improved. The improvement is attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes, which results in an increased hole injection efficiency and a decreased electron leakage into the p-type region. Particularly, comparisons with the convex quantum barriers structure and the reference structure show that the convex quantum wells structure has the best performance in all respects.     

Impedance spectroscopy for quantum dot light-emitting diodes

Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs) to investigate the charge dynamics and device physics. In this review, we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs. In particular, we focus on the Nyquist plot, Mott-Schottky analysis, capacitance-frequency and capacitance-voltage characteristics, and the d C/d V measurement of the QLEDs. These impedance measurements can provide critical information on electr...     

Improvement of carrier distribution in dual wavelength light-emitting diodes

The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied.Compared with a traditional sample,electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level,and the bottom quantum-wells light emitting is enhanced.All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.     

Parasitic emission in inkjet-printed InP-based quantum dot light-emitting diodes

Indium phosphide-based colloidal quantum dot (QD) light-emitting diodes represent a promising technology for various lighting applications. To promote this innovative technology closer to an industrialized production environment, the fabrication methods should be adapted. Hence it is necessary to replace the common spin-coating process under an inert atmosphere, by a more cost-efficient inkjet-printing process at ambient conditions. However, in our case, this transfer results in devices with limited performance and parasitic emission channels besides the desired QD emission. In this paper, we identify the physical origin of these parasitic emission channels for three different device layouts depending on the QD material as well as the number of inkjet-printed layers. For the first type of devices, a recombination process on the dopant of the electron transporting layer (ETL) as well as an exciplex formation at the interface between QDs and ETL was identified. For the next device layout, the introduction of a hole-conducting matrix embedding the QDs leads to a shift of the parasitic emission with contributions from the matrix material. Finally, the integration of a hole injection layer leads to a reduction of the undesired emission processes. For all three kinds of devices, the spacial separation of the dopant in the ETL from the QDs is a critical factor, since it directly influences the parasitic emission channels.     

Broadband light emitting diodes from pseudo-alloy quantum wells

Broadband light emitting diodes with output over the entire 1.4-1.9 μm wavelength range are demonstrated. These devices employ digital pseudo-alloys, comprising InGaAs-InGaAlAs short-period superlattices, to construct quantum wells, quantum barriers and separate confinement layers with different bandgaps and strain     

Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wells

The distribution of charged centers N(w), quantum efficiency, and electroluminescence spectra of blue and green light-emitting diodes (LED) based on InGaN/AlGaN/GaN p-n heterostructures were investigated. Multiple InGaN/GaN quantum wells (QW) were modulation-doped with Si donors in GaN barriers. Acceptor and donor concentrations near the p-n junction were determined by the heterodyne method of dynamic capacitance to be about N _A ≥ 1 × 10¹⁹ cm^?3 ? N _D ≥ 1 × 10¹⁸ cm^?3. The N(w) functions exhibited maxima and minima with a period of 11–18 (±2–3 nm) nm. The energy diagram of the structures has been constructed. The shifts of spectral peaks with variation of current (J=10^?6–3×10^?2 A) are smaller (13–12 meV for blue and 20–50 meV for green LEDs) than the corresponding values for the diodes with undoped barriers (up to 150 meV). This effect is due to the screening of piezoelectric fields in QWs by electrons. The dependence of quantum efficiency on current correlates with the charge distribution and specific features in the current-voltage characteristics.     

Steady-state carrier escape from single quantum wells

The authors have studied the variation in DC photocurrent with bias and temperature from GaAs-Al_xGa_1-xAs single quantum wells embedded in p-i-n diodes. They found that the observed temperature response shows Arrhenius behaviour with a field-dependent activation energy close to the hole well depth. This can be accounted for using a model based on the competition between photocarrier escape and recombination. Using reasonable values for the diode's built-in voltage and the quantum-well recombination lifetime, good quantitative agreement between theory and experiment is achieved if it is assumed that the recombination rate is governed by the fastest escaping carriers, which are light holes in the present devices     

A method to determine minority carrier lifetime in GaAs light-emitting diodes

A method for determining the minority carrier lifetime from the frequency dependence of the a.c. photo response of a p-n junction is described. Measurements were carried out on zinc-diffused GaAs-LEDs. The dependence of the light output power on the measured lifetimes was linear.     

Enhanced outcoupling in flexible organic light-emitting diodes on scattering polyimide substrates

We demonstrate an upscalable approach to increase outcoupling in organic light-emitting diodes (OLEDs) fabricated on flexible substrates. The outcoupling enhancement is enabled by introducing a thin film of microporous polyimide on the backside of silver nanowire (AgNW) electrodes embedded in neat colorless polyimide. This porous polyimide film, prepared by immersion precipitation, utilizes a large index contrast between the polyimide host and randomly distributed air voids, resulting in broadband haze (>75%). In addition, the composite polyimide/AgNW scattering substrate inherits the high thermal (>360 °C), chemical, and mechanical stability of polyimides. The outcoupling efficiency of the composite scattering substrate is studied via optical characterization of the composite substrate and electron microscopy of the scattering film. The flexible scattering substrates compared to glass/indium tin oxide (ITO) allows for a 74% enhancement in external quantum efficiency (EQE) for a phosphorescent green OLED, and 68% EQE enhancement for a phosphorescent white OLED. The outcoupling enhancement remains unharmed after 5000 bending cycles at a 2 mm bending radius. Moreover, the color uniformity over viewing angles is improved, an important feature for lighting applications.     

Improved quantum dot light-emitting diodes with a cathode interfacial layer

Colloidal quantum dot light-emitting diodes (QLEDs) are reported with improved external quantum efficiencies (EQE) and efficiency roll-off under high current densities by introducing a thermally-evaporated organic cathode interfacial material (CIM) Phen-NaDPO. QLEDs with this new CIM modified Al cathode were fabricated, giving an upwards of 25% enhancement in the EQE relative to the bare Al device. Ultraviolet photoemission spectroscopy (UPS) suggests that this material can effectively lower the work function of Al, therefore facilitating the electron injection in QLEDs. Furthermore, Phen-NaDPO was introduced into the LiF/Al device to afford better balanced hole/electron injection in the emitting layer. Consequently, the QLEDs with the organic CIM/LiF/Al cathode further increased EQE and current efficiency by 44% and 52%, respectively, with higher luminance and lower efficiency roll-off under high current densities.     

Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells

The luminescence spectra of blue and green light-emitting diodes based on In_xGa_1−x N/Al_yGa_1−y N/GaN heterostructures with a thin (2–3 nm) In_xGa_1−x N active layer have been investigated in the temperature and current intervals 100–300 K and J=0.01–20 mA, respectively. The spectra of the blue and green light-emitting diodes have maxima in the interavals ℏω_max=2.55–2.75 eV and ℏω_max=2.38–2.50 eV, respectively, depending on the In content in the active layer. The spectral intensity of the principal band decreases exponentially in the long-wavelength region with energy constant E ₀=45–70 meV; this is described by a model that takes into account the tails of the density of states in the two-dimensional active region and the degree of filling of the tails near the band edges. At low currents radiative tunneling recombination with a voltage-dependent maximum in the spectrum is observed in the spectra of the blue diodes. A model of the energy diagram of the heterostructures is discussed. Fiz. Tekh. Poluprovodn. 31, 1055–1061 (September 1997)     

Laterally intermixed quantum structure for carrier confinement in vertical-cavity surface-emitting lasers

A quantum structure intermixing from the lateral direction of the mesa sidewall is proposed as an improvement method of the performance of vertical-cavity surface-emitting lasers (VCSELs). Threshold current reduction of 70%, a differential quantum efficiency increase of 75% and a two times increase in output power were achieved by suppression of the surface recombination current and by the carrier confinement in the post-type VCSEL.     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.     

Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.     

Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells

Experiments show that the layer of separate confinement heterostructure (SCH) has a significant influence on the emission spectrum of superluminescent diodes (SLDs)/semiconductor optical amplifiers (SOAs). Reducing the thickness of SCH layer at the p-side could improve the uniformity of carrier distribution among multiple quantum wells (MQWs). With three In/sub 0.67/Ga/sub 0.33/As/sub 0.72/P/sub 0.28/ QWs near the p-side and two In/sub 0.53/Ga/sub 0.47/As QWs near the n-side, when the thickness of the SCH layer changes from 120 to 30 nm, the operation current for SLDs/SOAs to exhibit the full-width at half-maximum spectral width of above 270 nm could be reduced from 500 to 160 mA.     

Controlling charge balance using non-conjugated polymer interlayer in quantum dot light-emitting diodes

The balance of electron–hole charge carriers in quantum dot (QD) light-emitting diodes (QLEDs) is an important factor to achieve high efficiency. However, poor interfacial properties between QDs and their adjacent layers are likely to deteriorate the electron–hole charge balance, resulting in the poor performance of a QLED. In this paper, we report an enhanced efficiency in red-emitting inverted QLEDs by modifying the interface properties between QDs and ZnO electron transport layer (ETL) using a thin layer of non-conjugated polymer, poly(4-vinylpyridine) (PVPy). Based on the precise control of the electrical properties with PVPy, the maximum efficiency of the QLED is enhanced by 30% compared to the device without a PVPy layer. In particular, the efficiency at low current density region is significantly increased. We investigate the effect of the PVPy interlayer on the performance of QLEDs and find that this thin layer not only shifts the energy levels of the underlying ZnO ETL, but also effectively blocks the leakage current at the ETL/QD interface.