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锑化铟是中波红外探测应用较广的材料。抛光片的表面粗糙度是影响器件性能的关键指标。研究了锑化铟化学机械抛光(Chemical Mechanical Polishing, CMP)液的pH值、氧化剂比例以及抛光液流速对锑化铟抛光片表面粗糙度的影响,并结合原子力显微镜(Atomic Force Microscope, AFM)和表面轮廓仪测试对抛光片的表面粗糙度进行了表征和优化。结果表明,当pH值为8、氧化剂比例为0.75%、抛光液流速为200 L/min时,InSb晶片的表面粗糙度为1.05 nm (AFM),同时晶片的抛光宏观质量较好。 相似文献
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为了研究激光辐照焦平面探测器的温度效应,采用ANSYS有限元软件建立高斯脉冲激光辐照锑化铟红外焦平面探测器的3维结构分析模型,并对该探测器3维温度场效应进行了研究。结果表明,激光辐照下,探测器最大温度出现在最上层的锑化铟芯片上,探测器最大温度达到锑化铟芯片熔点温度798K时,将会引起探测器的热熔融损伤,且熔融损伤阈值受到脉宽、光斑半径等激光参量的影响;高斯脉冲激光辐照下,探测器中各层材料的温度场分布呈现出非连续的高温极值区域,其主要原因是位于锑化铟红外焦平面探测器中间层相间分布的铟柱和底充胶具有迥异的热学性质,并且造成探测器温度场云图中锑化铟芯片、底充胶与硅读出电路高温极值区域形成类似于互补的高温分布。这为进一步研究温升效应引起的应力场分布、提高探测器激光防护性能提供了重要的理论分析依据。 相似文献
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索开南 《电子工业专用设备》2012,41(4):33-36
通过研究P/P+外延片制备过程中衬底加工、背损背封、化学机械抛光、外延生长等各主要工艺对晶片总厚度变化、弯曲度、翘曲度等几何参数的影响,来分析晶片内应力的变化。重点研究了衬底片加工和外延生长各工序中内应力不断累积,晶片几何参数变化较大的现象,以便解决在器件研制的快速变温过程容易产生形变等问题。 相似文献
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Egbert Woelk Holger Jürgensen Randy Rolph Tim Zielinski 《Journal of Electronic Materials》1995,24(11):1715-1718
We use low pressure MOVPE to grow indium antimonide films on groups of eight 3 inch GaAs wafers per run. The films are used
for the production of magnetoresistive position sensors for the car industry. To meet the narrow specifications for automotive
components, the standard deviation of the sheet resistivity, and the thickness of the films have been reduced below 1.5%.
This uniformity is the result of an optimization process encompassing the determination of the best susceptor temperature
and the optimum flow. The gas velocity was found to have a large impact on the uniformity of the layers. Rotation of the wafers
and the use of an optimum gas velocity results in extremely uniform layers. 相似文献
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The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 1016 cm–3 for indium antimonide and 4 × 1017 cm–3 for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed. 相似文献
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H. L. Henneke 《Solid-state electronics》1961,3(3-4):159-166
The design, fabrication, and electrical characteristics of an n-p-n indium antimonide transistor which operates at 77°K are discussed. An analysis of the expected high-frequency performance is presented and a comparison made to a p-n-p germanium transistor. Because of its high electron mobility, the indium antimonide transistor should have a base transit time 1/26 that of a similar germanium transistor. Although these ultimate capabilities have not been approached, transistors with ft as high as 300 Mc/s and β's of 500 have been observed. Switching speeds approaching those of the best state-of-the-art germanium transistors have been measured. 相似文献
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Semiconductors - A version of the spin–orbit interaction of orbitally moving and spin-oriented electrons in a longitudinal autosoliton in indium antimonide under a longitudinal magnetic field... 相似文献
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D. L. Partin L. Green J. Heremans C. M. Thrush 《Journal of Electronic Materials》1997,26(10):1237-1243
Magnetoresistors made from n-type indium antimonide are of interest for magnetic position sensing applications. In this study,
tin-doped indium antimonide was grown by the metalorganic chemical vapor deposition technique using trimethylindium, trisdimethylaminoantimony,
and tetraethyltin in a hydrogen ambient. Using a growth temperature of 370°C and a pressure of 200 Torr, it was found that
the electron density in tin-doped films varied from 3.3×1016 cm−3 to 4.0×1017 cm−3 as the 5/3 ratio was varied from 4.8 to 6.8. From secondary ion mass spectroscopy (SIMS) studies, it was found that this
variation is not caused by a change in site occupancy of the tin atoms from antimony to indium lattice sites, but rather to
a change in the total tin concentration incorporated into the films. This dependence of tin incorporation on stoichiometry
could be used to rapidly vary the doping level during growth. Undoped films grown under similar conditions had electron densities
of about 2×1016 cm−3 and electron mobilities near 50,000 cm2V−1s−1 at room temperature for films that were only 1.5 μm thick on a gallium arsenide substrate. Attempts to grow indium antimonide
at 280°C resulted in p-type material caused by carbon incorporation. The carbon concentration as measured with SIMS increased
rapidly with increasing growth rate, to above 1019 cm−3 at 0.25 μm/h. This is apparently caused by incomplete pyrolysis of a reactant at this low growth temperature. Growth at 420°C
resulted in rough surface morphologies. Finally, it was demonstrated that films with excellent electron mobility and an optimized
doping profile for magnetoresistors can be grown. 相似文献
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《Solid-State Circuits, IEEE Journal of》1982,17(4):761-768
A low-noise, cryogenically cooled preamplifier has been designed and built for indium antimonide detectors used in IR astronomy. General noise and frequency response equations for the transimpedance amplifier are derived. The effects of finite open-loop gain and bandwidth and of photodetector parameters on circuit performance are shown. A current-injecting background cancellation scheme based on optical feedback and synchronous filtering is described. Total electrical NEP figures as low as 10/SUP -16/ W (at 5 /spl mu/m) and background rejection ratios higher than 3000:1 have been measured using a 0.5 mm diameter detector. 相似文献
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设计了一种由磷化铟(InP)、砷化铟(InAs)和锑化铟(InSb)3种半导体材料复合而成的槽深线性渐变的光栅型超宽带远红外线吸收器。其吸收机理是表面等离子共振效应和电介质腔共振效应。利用频域有限差分法(Finite-Difference Frequency-Domain,FDFD)计算的结果表明,凹槽个数的改变对吸收率的影响相对较大,而凹槽深度、凹槽宽度、涂层厚度和光栅周期的变化对吸收率的影响相对较小。在采用优化的结构参数条件下,以及入射角为0~80°和入射波长为28~75 m的范围内,此吸收器的平均吸收率可达到92%以上。本文所设计的吸收器有望在远红外探测等方面得到应用。 相似文献