Thermoelectric properties of n-type Bi<Subscript>2</Subscript>Te<Subscript>2.7</Subscript>Se<Subscript>0.3</Subscript> compounds prepared by spark plasma sintering

In this study, the thermoelectric properties of 0.1 wt.% Cdl₂-doped n-type Bi₂Te_2.7Sb_0.3 compounds, fabrieated by SPS in a temperature range of 250°C to 350°C, were characterized. The density of the compounds was increased to approximately 100% of the theoretical density by carrying out consolidation at 350°C. The Seebeck coefficient, thermal conductivity, and electrical resistivity were dependent on a hydrogen reduction process and the sintering temperature. The Seebeck coefficient and the electrical resistivity increased with the reduction process. Also, electrical resistivity decreased and thermal conductivity increased with sintering temperature. The results suggest that carrier density and mobility vary according to the reduction process and sintering temperature. The highest figure of merit, 1.93×10⁻³ K⁻¹, was obtained for the compound consolidated at 350°C for 2 min.     

Electrochemical properties of carbon-coated LiFePO<Subscript>4</Subscript> and LiFe<Subscript>0.98</Subscript>Mn<Subscript>0.02</Subscript>PO<Subscript>4</Subscript> cathode materials synthesized by solid-state reaction

Olivine structured LiFePO4/C (lithium iron phosphate) and Mn2+-doped LiFe0. 98Mn0. 024/C powders were synthesized by the solid-state reaction. The effects of manganese partial substitution and different carbon content coating on the surface of LiFePO4 were considered. The structures and electrochemical properties of the samples were measured by X-ray diffraction (XRD), cyclic voltammetry (CV), charge/discharge tests at different current densities, and electrochemical impedance spectroscopy (EIS). The electrochemical properties of LiFePO4 cathodes with x wt. ％ carbon coating (x=3, 7, 11, 15) at γ=0. 2C, 2C (1C=170 mAh·g-1) between 2. 5 and 4. 3 V were investigated. The measured results mean that the LiFePO4 with 7 wt. ％ carbon coating shows the best rate performance. The discharge capacity of LiFe0. 98Mn0. 02PO4/C composite is found to be 165 mAh·g 1 at a discharge rate, γ=0. 2C, and 105 mAh·g-1 at γ=2C, respectively. After 10cycles, the discharge capacity has rarely fallen, while that of the pristine LiFePO4/C cathode is 150 mAh·g-1 and 98 mAh·g-1 at γ=0. 2 and 2C, respectively. Compared to the discharge capacities of both electrodes above, the evident improvement of the electrochemical performance is observed, which is ascribed to the enhancement of the electronic conductivity and diffusion kinetics by carbon coating and Mn2+-substitution.     

Oxidation Behavior of TiAl<Subscript>3</Subscript>/Al Composite Coating on Orthorhombic-Ti<Subscript>2</Subscript>AlNb Based Alloy at Different Temperatures

This paper reports the oxidation behavior of TiAl₃/Al composite coating deposited by cold spray. The substrate alloy was orthorhombic-Ti-22Al-26Nb (at.%). The oxidation kinetics of the coating was tested at 650, 800, and 950 °C, respectively. The parabolic rate constant for the coating oxidized at 650 °C was k _p = 7.2 × 10⁻² mg·cm⁻²·h^−1/2 for the tested 1200 h. For the coating oxidized at 800 °C, the oxidation kinetics could be separated into two stages with k _p value of 39.8 × 10⁻² mg·cm⁻²·h^−1/2 for the initial 910 h and 17.7 × 10⁻² mg·cm⁻²·h^−1/2 for the stage thereafter. For the coating oxidized at 950 °C, the oxidation kinetics can be separated into three stages with k _p of 136.9 × 10⁻² mg·cm⁻²·h^−1/2 in the first 100 h, followed by 26.9 × 10⁻² mg·cm⁻²·h^−1/2 from 100 to 310 h, and 11.8 × 10⁻² mg·cm⁻²·h^−1/2 from 310 to 1098 h. XRD, SEM, and EPMA were used to study the microstructure of the coating. The results indicated that the oxidation took place throughout the entire coating instead of only at the surface. The aluminum phase in the composite coating was soon oxidized to Al₂O₃ in all tested cases. The aluminum in TiAl₃ phase was depleted gradually and oxidized to Al₂O₃ along with the degradation of TiAl₃ to TiAl₂ and TiAl as the temperature increased and time proceeded. AlTi₂N was also a typical oxidation product at temperature higher than 800 °C. The experimental results also indicated that the protection of the coating was attributed greatly to the interlayer formed between the coating and the substrate.     

Effects of dopant content on optical and electrical properties of In<Subscript>2</Subscript>O<Subscript>3</Subscript>: W transparent conductive films

The In2O3:W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1. 0× 10-3 Ω· cm, highest carrier mobility of 43. 7 cm2. W-1. s-1 and carrier concentration of 1. 4× 1020 cm-3 was obtained at the content of 2. 8 wt. ％. The average optical transmittance from 300 nm to 900 nm reached 87. 6％.     

Cr doping effect in B-site of La<Subscript>0.75</Subscript>Sr<Subscript>0.25</Subscript>MnO<Subscript>3</Subscript> on its phase stability and performance as an SOFC anode

La_0.75Sr_0.25Cr _y Mn_1−y O₃ (LSCM) (y = 0.0–0.6) composite oxides were synthesized by a complexing process of combining ethylene diamine tetraacetic acid (EDTA) and citrate. X-ray diffraction (XRD), temperature-programmed reduction, electrical conductivity, I–V polarization, and impedance spectroscopy were conducted to investigate the Cr doping effect of La_0.75Sr_0.25MnO₃ on its phase stability and electrochemical performance as a solid-oxide fuel cell (SOFC) anode. The chemical and structural stabilities of the oxides increased steadily with increasing Cr doping concentration, while the electrical conductivity decreased on the contrary. At y ≥ 0.4, the basic perovskite structure under the anode operating condition was sustained. a cell with 0.5-mm-thick scandia-stabilized zirconia electrolyte and La_0.75Sr_0.25Cr _y Mn_1−y O₃ anode delivered a power density of ∼15 mW·cm⁻² at 850°C.     

Formation of high-density TiN/Ti<Subscript>5</Subscript>Si<Subscript>3</Subscript> ceramic composites using preceramic polymer

The formation, microstructure and properties of high-density TiN/Ti₅Si₃ ceramic composites created by the pyrolysis of preceramic polymer with filler were investigated. Methylpolysiloxane was mixed with TiH₂ as filler and ceramic composites prepared by pyrolysis at 1200°C to 1600°C under N₂, Ar and vacuum were studied. When a specimen with 70 vol.% TiH₂ was pyrolyzed up to 1600°C in a vacuum after a preheat treatment at 850°C in a N₂ atmosphere and subsequently heat-treated at 1600°C for 1 h under Ar at a pressure of 2 MPa, a ceramic composite with full density was obtained. The microstructure of the ceramic composite was composed of TiN and Ti₅Si₃ phases. Under specific pyrolysis conditions, a ceramic composite with a density of 99.2 TD%, a Vickers hardness of 18 GPa, a fracture toughness of 3.5 MPam^1/2, a flexural strength of 270 MPa and a electrical conductivity of 6200 ohm⁻¹·cm⁻¹ was obtained.     

Electronic transport properties of Te-doped CoSb<Subscript>3</Subscript> skutterudites prepared by hot pressing

Te-doped CoSb₃ (CoSb_3−yTe_y) skutterudites were prepared by hot pressing and their electronic transport properties examined. A single δ-phase was successfully obtained. The Seebeck and Hall coefficients confirmed that all the Te-doped CoSb₃ showed n-type conduction. The Te atoms successfully acted as electron donors by substitution of the Sb atoms. The carrier concentration increased an order of 10²⁰ cm⁻³ by Te doping, whereas the carrier mobility decreased as the doping content increased. The Seebeck coefficient and electrical resistivity decreased with an increase in the Te content. The doping considerably reduced the thermal conductivity due to electron-phonon scattering. The lattice contribution was dominant over the electronic contribution.     

Electrical properties of dense and nanocrystalline Sm3+-doped Ce1?xSmxO2?δ (0.05 ≤ x ≤ 0.3) electrolytes for IT-SOFCs

Sm³⁺-doped Ce_1−xSm_xO_2−δ (0.05 ≤ x ≤ 0.3) nano-sized powders for solid electrolytes were synthesized by a solution combustion method, using aspartic acid as a combustion fuel. The calcined Ce_1−xSm_xO_2−δ powders were a ceria-based single phase with a cubic fluorite structure. The nano-sized Ce_1−xSmxO_2−δ powders provided a high density, ultra-fine grain size, and high electrical conductivity even at a low sintering temperature of 1400 °C. The grain size and relative density of the Ce_1−xSm_xO_2−δ pellets ranged from 329 nm to 496 nm and from 91.9 % to 99.2 %, respectively. The grain size and density of the Ce_1−xSm_xO_2−δ pellets decreased with an increase of Sm³⁺ content. The electrical conductivity of the Ce_1−xSmxO_2−δ increased with an increase of Sm³⁺ content up to x = 0.25 and then decreased with higher Sm³⁺ content. The maximal electrical conductivity (0.105 Scm⁻¹) was obtained with Ce_0.75Sm_0.25O_2−δ at 800 °C.     

Effect of Ga addition on the magnetic properties and microstructure of nanocrystalline Nd_（12.3）Fe_（81.7）B_（6.0） ribbons

Nd 12.3 Fe 81.7 x Ga x B 6.0 (x = 0-1.8) ribbons were prepared by melt spinning at 22 m/s and subsequent annealing treatment. The influences of Ga addition and annealing conditions on the magnetic properties and microstructure of the nanocrystalline alloys were systematically investigated. After being annealed at 620℃ for 20 min, the J r and H ci increased from 0.85 T and 582.6 kA/m for Ga-free sample to 0.97 T and 734.6 kA/m for the x = 0.9 sample, respectively. The (BH) max for the x = 0.9 sample increased by about 40% from 96.3 to 135.5 kJ/m 3 compared with that of the Ga-free one. The significant improvement of magnetic properties originated from the refinement of grains in the samples by introducing Ga, which led to a stronger exchange coupling between the neighboring grains in comparison with that in Ga-free samples. The microstructure and magnetic properties of the samples depended strongly on annealing parameters, while the sensitivity of micro-structure to annealing conditions could be significantly suppressed by the addition of Ga element.     

Kinetics of forward extraction of Ti（IV） from H_2SO_4 medium by P_（507） in kerosene using the single drop technique

The kinetics of forward extraction of Ti(IV) from H2SO4 medium by P507 in kerosene has been investigated using the single drop technique.In the low concentration region of Ti(IV),the rate of forward extraction at 298 K can be represented by F(kmol·m-2·s-1)=10-5.07 [TiO 2 + ][H+]-1 [NaHA 2 ](o)·Analysis of the rate expression reveals that the rate determining step is(TiO)(i)2+ +(HA 2)(i)-[TiO(HA2)](i)+.The values of Ea,H±,S±,and G±298 are calculated to be 22 kJ·mol-1,25 kJ·mol-1,-218 J·mol-1·K-1,and 25 kJ·mol-1,respectively.The experimental negative S± values indicate that the reaction step occurs via SN2 mechanism.     

Luminescence properties of red-emitting Ca<Subscript>2</Subscript>Al<Subscript>2</Subscript>SiO<Subscript>7</Subscript>:Eu<Superscript>3+</Superscript> nanoparticles prepared by sol-gel method

A series of red-emitting Ca2-xAl2SiO7:xEu3+(x = 1 mol.%-10 mol.%) phosphors were synthesized by the sol-gel method.The effects of annealing temperature and doping concentration on the crystal structure and luminescence properties of Ca2Al2SiO7:Eu3+ phosphors were investigated.X-ray diffraction(XRD) profiles showed that all peaks could be attributed to the tetragonal Ca2Al2SiO7 phase when the sample was annealed at 1000℃.Scanning electron microscopy(SEM) micrographs indicate that the phosphors have an irregularly rounded morphology with particles of about 200 nm.Excitation spectra showed that the strong broad band at around 258 nm and weak sharp lines in 350-490 nm were attributed to the charge transfer band of Eu3+-O2-and f-f transitions within the 4f6 configuration of Eu3+ ions,respectively.Emission spectra implied that the red luminescence could be attributed to the transitions from the 5D0 excited level to the 7FJ(J = 0,1,2,3,4) levels of Eu3+ ions with the main electric dipole transition 5D0→7F2(618 and 620 nm),and Eu3+ ions prefer to occupy a lower symmetry site in the crystal lattice.Moreover,the photoluminescence(PL) intensity was strongly dependent on both the sintering temperature and doping concentration,and the highest PL intensity was observed at an Eu3+ concentration x = 7 mol.% after annealing at 1100℃.The obtained Ca2Al2SiO7:Eu3+ phosphor may have potential application for the red lamp phosphor.     

Solvothermal synthesis and thermoelectric properties of skutterudite compound Fe（0.25）Ni（0.25）Co（0.5）Sb3

Nanostructured skutterudite-related compound Fe_0.25Ni_0.25Co_0.5Sb₃ was synthesized by a solvothermal method using FeCl₃, NiCl₂, CoCl₂, and SbCl₃ as the precursors and NaBH₄ as the reductant. The solvothermally synthesized powders consisted of fine granules with an average particle size of tens of nanometers. The bulk material was prepared by hot pressing the powders. Transport property measurements indicated a heavily doped semiconductor behavior with n-type conduction. The thermal conductivity is about 1.83 W·m⁻¹·K⁻¹ at room temperature and decreases to 1.57 W·m⁻¹·K⁻¹ at 673 K. The low thermal conductivity is attributed to small grain size and high porosity. A maximum dimensionless figure of merit of 0.15 is obtained at 673 K.     

Electronic transport properties of Ni-doped CoSb<Subscript>3</Subscript> prepared by encapsulated induction melting

Ni-doped CoSb₃ skutterudites were prepared by encapsulated induction melting and their thermoelectric and electronic transport properties were investigated. The negative signs of Seebeck and Hal coefficients for all Ni-doped specimens revealed that Ni atoms successfully acted as n-type dopants by substituting Co atoms. The carrier concentration increased as the Ni doping content increased, and the Ni dopants could generate excess electrons. However, the carrier mobility decreased as the doping content increased, which indicates that the electron mean free path was reduced by the impurity scattering. The Seebeck coefficient and the electrical resistivity decreased as the carrier concentration increased, as the increase in carrier concentration by doping overcame the decrease in the carrier mobility by impurity scattering. The Seebeck coefficient showed a negative value at all temperatures examined and increased as the temperature increased. The temperature dependence of electrical resistivity suggested that Co_1−xNi_xSb₃ is a highly degenerate semiconducting material. Thermal conductivity was considerably reduced by Ni doping, and the lattice contribution was dominant in the Ni-doped CoSb₃.     

Control of microwave dielectric properties in 0.42ZnNb<Subscript>2</Subscript>O<Subscript>6</Subscript>−0.58TiO<Subscript>2</Subscript> ceramics by the quantitative analysis of phase transition

Phase constitutions of ZnNb₂O₆−TiO₂ mixture ceramics were significantly changed according to the sintering temperature. Phase transition procedures and their effect on the microwave dielectric properties of 0.42ZnNb₂O₆−0.58TiO₂ were investigated using X-ray powder diffraction and a network analyzer. The fractions of the phases composing the mixture were calculated by measuring integral intensities of each reflection. The structural transitions in 0.42ZnNb₂O₆−0.58TiO₂ were interpreted as the association of two distinct steps: the columbite and rutile to ixiolite transition present at lower temperatures (900–950°C) and the ixiolite to rutile transition at higher temperatures (1150–1300°C). These transitions caused considerable variation of microwave dielectric properties. Importantly, τ_f was modified to around 0 ppm/°C in two sintering conditions (at 925°C for 2 hr and at 1300°C for 2 hr), by the control of phase constitution.     

Investigation on Oxygen Chemical Diffusion Properties of Perovskite Oxides (La1?x Pr x )0.6Sr0.4Co0.8Fe0.2O3?δ

Perovskite oxide samples of (La_1−x Pr _x )_0.6Sr_0.4Co_0.8Fe_0.2O_3−δ (x = 0.2, 0.4, 0.6, 0.8) are obtained by solid-state reaction method. The oxygen chemical diffusion properties of (La_1−x Pr _x )_0.6Sr_0.4Co_0.8Fe_0.2O_3−δ are determined by electrical conductivity relaxation technique. The results show that the conductivity of (La_1−x Pr _x )_0.6Sr_0.4Co_0.8Fe_0.2O_3−δ increases with the increase of oxygen partial pressure. The (La_1−x Pr _x )_0.6Sr_0.4Co_0.8Fe_0.2O_3−δ samples have a high oxygen chemical diffusion coefficient, which decreases linearly with a decrease in temperature and an increase in Pr content. The oxygen chemical diffusion coefficient D _chem remains fairly constant at high PO₂. The oxygen chemical diffusion coefficient is the highest for (La_1−x Pr _x )_0.6Sr_0.4Co_0.8Fe_0.2O_3−δ with x = 0.2, and attains a value of 9.41 × 10⁻⁵ cm² s⁻¹ at 600 °C. This shows the material’s promise as a cathode material for intermediate temperature solid oxide fuel cells.     

Electronic structures of Heusler alloy Co2FeAl1-xSix surface

We have calculated the electronic structures of Co2FeAl1-xSix(101) surface using first-principles method based on the density functional theory. Because of the surface effect, the minority spin band gap at the Fermi level disappears at the surface of bulk Co2FeAl1-xSix. However, beneath the surface, the minority spin gap opens at the Fermi level, which indicates that the electronic structures of Co2FeAl1-xSix(101) be-come close to that of bulk phase. Accordingly, the Co2FeAl1-xSix(101) surface is a composite tri-layer structure that corresponds to the weakening of half-metallic property in Co2FeAl1-xSix films. Even though, the spin polarization of Co2FeAl1-xSix(101) surface is still larger than that of Co2FeAl or Co2FeSi materials, making Co2FeAl1-xSix a promising spintronics material.     

Electrochemical synthesis,studies and modification of TiO<Subscript>2</Subscript> nanotubes

TiO₂ nanotubes (TiO₂ NTs) were synthesized using the electrochemical method in a 1 M H₂SO₄ + 0.15% HF electrolyte. The initial nanotubes have a diameter of 100 ± 10 nm (with the length of up to 150–200 nm) and a wall thickness of 20 ± 5 nm. Nanotube treatment at 400°C results in negligible changes in their structure compared to the initial samples. At 600°C, a change occurs in the nanotube structure and morphology, i.e., the amount decreases drastically; the diameter changes; and, as a consequence, the surface area value decreases. Changes in the structure lead to changes in the electrochemical properties, which is apparently related to a transition from the amorphous structure to anatase and rutile. It is shown that a reversible two-electron reaction, including hydrogen intercalation and Ti⁴⁺/Ti³⁺ oxidation/reduction in the potential range of (−0.6−0.4 V), occurs as a result of moderate thermal treatment. The possibility of the use and promising character of TiO₂ NTs as support for a nonplatinum catalyst based on cobalt tetra(p-methoxyphenyl)porphyrin are brought to light. The electrocatalytic activity of the synthesized catalyst per nominal CoTMPP mass in the reaction of O₂ reduction at E = 0.7 V is ≈25 A/g_CoTMPP, which is comparable to nonplatinum systems on a carbon support.     

Phase equilibria and multiphase reaction diffusion in the Cr-C and Cr-N systems

The phase formation in the Cr-C and Cr-N systems was investigated using reaction diffusion couples. The carbides were prepared by reaction of chromium metal with graphite powder in the range 1143 to 1413 °C in argon atmosphere; the nitride samples by reaction of the metal with N₂ (≤31 bar) in the range 1155 to 1420 °C. While the carbide samples showed the three chromium carbide phases in form of dense diffusion layers between 1100 and 1400 °C, porosity occurred at temperatures above 1400 °C. The composition of the phase bands was measured by the means of electron probe microanalysis. For the Cr₂₃C₆ phase, a slightly higher C composition was found than given in the literature. In Cr-N diffusion couples both the δCrN_1−x and βCr₂N formed phase bands at T≥1150 °C. Because decomposition processes occurred upon cooling, quenching experiments were carried out in the range 1370 to 1420 °C at 31 bar N₂ to stabilize the phases. The EPMA investigations of the homogeneity ranges yielded a large increase of the homogeneity range for δCrN_1−x with increasing temperature. The nonmetal diffusion coefficients in all phases of both systems were calculated from layer growth and/or from concentration profiles. In δCrN_1−x the N diffusivity was found to be strongly dependent on the composition. The Vickers microhardnesses of the various phases were obtained by measuring the diffusion layers.     

Properties of nickel-cobalt composite silicides by thermal annealing of Ni<Subscript>1−x</Subscript>Co<Subscript>x</Subscript> (x=0.2, 0.5, and 0.8) alloy thin films on silicon and polysilicon substrates

10 nm-Ni_1−xCo_x (x=0.2, 0.5, and 0.8)/p-Si(100)(or poly crystalline Si) was thermally annealed using rapid thermal annealing for 40 s at 600–1100°C. The annealed film structures developed into NiCoSi_x, and the resulting changes in sheet resistance, microstructure, and composition were investigated using a four-point probe, a scanning electron microscope, a field ion beam, an X-ray diffractometer, and an Auger electron spectroscope. The final thickness of NiCoSi_x formed on single-crystal silicon was approximately 12.64nm, and it maintained its sheet resistance below 20 Ω/sq. during the silicidation annealing at 1100°C. The NiCoSi_x formed on polysilicon had a thickness of 35.04nm, and its low resistance was maintained up to 900°C. Additional annealing of silicides at the given RTA temperature for 30 min resulted in a drastic increase in sheet resistance. We identified Ni₃Si₂ and a NiSi phase at 700°C and 1000°C for single-crystal silicon substrates. Moreover, Ni₃Si₂, NiSi, and CoSi₂ phases were stable at 700°C, and then NiSi₂ and Ni₃Si₂ became stable for polycrystalline silicon substrates at 1000°C. When the amount of Co was 80%, only a Ni₃Si₂ phase was confirmed at 700°C and 1000°C in both the single and polycrystalline substrates. With less Co (Co=0.2, 0.5), Ni₃Si₂, NiSi, and CoSi₂ phases were observed at 700, and Ni₃Si₂ and NiSi₂ phases were observed at 1000°C. Cobalt also improved thermal stability of the silicides formed on the polysilicon gate, but this enhancement was lessened due to the silicon mixing during high temperature diffusion. In conclusion, the proposed nickel cobalt composite silicides formed from the nano-thick alloy films may be superior to conventional nickel monosilicides due to improved thermal stability.     

Phase equilibria and multiphase reaction diffusion in the Cr-C and Cr-N systems

The phase formation in the Cr-C and Cr-N systems was investigated using reaction diffusion couples. The carbides were prepared by reaction of chromium metal with graphite powder in the range 1143 to 1413 °C in argon atmosphere; the nitride samples by reaction of the metal with N₂ (≤31 bar) in the range 1155 to 1420 °C. While the carbide samples showed the three chromium carbide phases in form of dense diffusion layers between 1100 and 1400 °C, porosity occurred at temperatures above 1400 °C. The composition of the phase bands was measured by the means of electron probe microanalysis. For the Cr₂₃C₆ phase, a slightly higher C composition was found than given in the literature. In Cr-N diffusion couples both the δCrN_1−x and βCr₂N formed phase bands at T≥1150 °C. Because decomposition processes occurred upon cooling, quenching experiments were carried out in the range 1370 to 1420 °C at 31 bar N₂ to stabilize the phases. The EPMA investigations of the homogeneity ranges yielded a large increase of the homogeneity range for δCrN_1−x with increasing temperature. The nonmetal diffusion coefficients in all phases of both systems were calculated from layer growth and/or from concentration profiles. In δCrN_1−x the N diffusivity was found to be strongly dependent on the composition. The Vickers microhardnesses of the various phases were obtained by measuring the diffusion layers.