射频磁控溅射制备PZT铁电薄膜的工艺研究

在SiO2/Si基片上采用直流对靶溅射技术制备出Pt/Ti底电极;应用射频磁控溅射方法,利用快速热处理(RTA)工艺,制备出了具有良好铁电性能的Pb(Zr0.52Ti0.48)O3铁电薄膜.将样品进行10min快速热退火处理,退火温度700℃.测试分析表明:薄膜厚度比较均匀、表面基本平整、没有裂纹和孔洞、致密性好、薄膜样品的矫顽场强(Ec)为28.6kV/cm,剩余极化强度(Pr)为18.7μC/cm2,自发极化强度(Ps)为37.5μC/cm2,是制备铁电薄膜存储器的优选材料.     

SrBi_2Nb_2O_9织构陶瓷各向异性的电性能

以熔盐法制备的片状SrBi2Nb2O9晶粒为模板晶粒,固相法制各的SrBi2Nb2O9为基体粉料,采用模板晶粒生长技术和流延法制备了SrBi2Nb2O9织构陶瓷.研究了SrBi2Nb2O9织构陶瓷沿a-b平面方向和c方向的介电、压电及铁电性能,发现SrBi2Nb2O9织构陶瓷的性能呈现出显著的各向异性,其a-b平面方向的介电常数ε33T/ε0达186,tanδ仅有0.003,压电常数d33=13pC/N,剩余极化强度Pr=10.3iμC/cm2,矫顽场强Ec=4.6kV/mm,均明显优于C方向的电性能.     

PMnS-PZN-PZT压电纤维的制备与铁电性能

采用固相法制备了0.8Pb(Mn1/3Sb2/3)0.05(Zr1/2Ti1/2)0.95O3–0.2Pb(Zn1/3Nb2/3)0.28(Zr1/2Ti1/2)0.72O3(PMnS–PZN–PZT)粉末,然后用塑性聚合物方法制备了PMnS–PZN–PZT压电纤维。研究了纤维夹持状态对其铁电性能的影响。结果表明:塑性聚合物法制备的PMnS–PZN–PZT压电纤维具有良好的铁电性能,压电纤维处于自由状态时,剩余极化强度和矫顽场分别为85.4μC/cm2和8.5kV/cm,但电滞回线很难饱和。将纤维采用环氧树脂固化后,剩余极化强度变成39.2μC/cm2,电滞回线呈饱和状态,说明夹持状态对纤维的铁电性能产生很大的影响。高压下压电纤维浇铸前后的漏电流测试结果表明,压电纤维浇铸后剩余极化强度变小主要与漏电流有关。     

Pb用量对锆钛酸铅薄膜微观结构和铁电性能的影响

在Pt/Ti/SiO2/Si基片上,通过多次匀胶旋涂-预热处理工艺制备了PbTiO3(PT)无机薄层夹心的锆钛酸铅(lead zirconate titanate,PZT)薄膜,然后经650℃退火处理得到了所需的具有钙钛矿结构的PZT铁电薄膜.用X射线衍射、原子力显微镜表征了PZT铁电薄膜微观结构,并测试铁电性能.结果表明:制备PT层时的Pb用量对得到的PZT铁电薄膜的微观结构和铁电性能有重要影响.当Pb过量15%(摩尔分数)左右时,得到的PZT铁电薄膜不仅晶界清晰,晶粒尺寸分布均匀,具有纯钙钛矿结构,而且铁电性能优异,剩余极化强度Pr=21μC/cm2,矫顽场Ec=37kV/cm.     

CuO掺杂对NaNbO_3–BaTiO_3无铅压电陶瓷性能的影响

利用传统烧结法制备CuO掺杂NaNbO3–BaTiO3无铅压电陶瓷,研究不同CuO掺量(0、0.1%、0.2%、0.3%、0.4%、1.0%和2.0%,摩尔分数)对样品显微结构、物相组成及电性能的影响。结果表明:CuO掺量对物相组成、压电性能、铁电性能及介电性能都有显著影响。当CuO掺量从0增大到0.3%时,压电性能增高;当CuO掺量超过0.3%时,压电性能明显下降。当CuO掺量为0.3%时,样品的综合性能最佳:压电常数(d33)为150pC/N,介电损耗(tanδ)为0.0174,机电耦合系数(kp)为30.19%,剩余极化强度(Pr)为13.5μC/cm2,矫顽场(Ec)为1.94kV/mm。     

钽镁酸钡缓冲层对锆钛酸铅铁电薄膜性能的影响

采用溶胶–凝胶工艺在Pt/Ti/Si O2/Si基片上,通过引入钽镁酸钡[Ba(Mg1/3Ta2/3)O3,BMT]缓冲层,制备了锆钛酸铅[Pb(Zr0.52Ti0.48)O3,PZT]铁电薄膜。研究了BMT缓冲层对PZT铁电薄膜结晶和性能的影响。结果表明:引入BMT缓冲层利于PZT薄膜的生长;PZT薄膜具有钙钛矿结构,且没有裂纹、结晶良好、致密性好;缓冲层的厚度对PZT铁电薄膜的微观结构和铁电性能有重要影响。随BMT缓冲层厚度增加,PZT晶粒增大,介电损耗tanδ逐渐减少,介电常数εr和剩余极化强度Pr先增大后减少,矫顽场Ec先减少后增大。当BMT缓冲层厚约为10 nm时,PZT薄膜具有最优的铁电性能:εr=1 850,Pr=20.2μC/cm2,Ec=43.9 k V/mm。这与BMT与PZT具有相似的晶格常数、较小的晶格失配度和相近的禁带宽度有关。     

热处理工艺对钙锶铋钛铁电薄膜性能的影响

用溶胶-凝胶法和快速退火技术在带白金电极和钛过渡层的硅片(Pt/Ti/SiO2/Si)上制备了钙锶铋钛(Ca0.4Sr0.6Bi4Ti4O15,CsBT-0.4)铁电薄膜.结果表明:退火温度及保温时间对CSBT-0.4铁电薄膜的微观结构、晶粒取向以及铁电性能的影响较大.x射线衍射谱表明:退火温度为750℃、保温时间为5min,得到的CsBT-0.4铁电薄膜样品的晶粒大小较均匀且致密性好,而且晶粒以a轴取向的球状晶粒为主,剩余极化强度(2Pr)和矫顽场(2Ec)分别为16.2 μC/cm2和130kV/cm.     

(1-x)Sr_2Bi_4Ti_5O_(18)-xBiFeO_3复合铁电薄膜的制备及性能研究

用溶胶-凝胶法结合层层退火工艺制备出(1-x)Sr_2Bi_4Ti_5O_(18)-xBiFeO_3(SBFTi-x,x=0.1-0.4)系列薄膜,对样品进行分析研究,发现随着BFO取代量x的增加,SBFTi-x复合薄膜的铁电性能逐渐提高。当BiFO_3(BFO)的取代量为0.3,测试电场为931 KV/cm时,剩余极化强度2Pr=23.4μC/cm~2,矫顽场2Ec=28.0 KV/cm,漏电流密度较小。对薄膜样品的漏电流曲线进行线性拟合,发现当测试电场强度低于230KV/cm时,曲线的拟合斜率ɑ都接近于1,说明薄膜内部的漏电流导电机制是以欧姆传导(ɑ≈1)为主,而测试场强高于230 KV/cm时,其导电机制为FN隧道效应。     

铌镁酸钡缓冲层对锆钛酸铅薄膜漏电流的抑制

将铌镁酸钡(Ba(Mg1/3Nb2/3)O3,BMN)作为缓冲层,通过溶胶-凝胶法制备了锆钛酸铅(Pb(Zr0.52Ti0.48)O3,PZT)铁电薄膜.探究BMN缓冲层对PZT铁电薄膜介电、铁电性能影响.研究发现:BMN缓冲层不仅可以改善PZT薄膜晶化生长,同时阻碍了PZT与Pt的互扩散而降低了漏电流.由于对漏电流的抑制作用,适当厚度BMN缓冲层的引入可改善PZT的铁电性能,但随着缓冲层厚度的增加,由于其分压作用,复合膜铁电性减弱.当厚度为10 nm时,薄膜的综合性能最好:介电常数εr=1612.03,介电损耗tanδ=0.024,剩余极化值Pr=31.65 μC/cm2,矫顽场Ec=71.5 kV/cm,漏电流密度J=4.4×10-6 A/cm2.     

钨离子掺杂对Ca0.7La0.3Bi4(Ti1-xWx)4O15陶瓷性能的影响

用固相法研究了钨离子(W6 )掺杂对铋层状钛酸铋钙镧[Ca0.7La0.3Bi4(Ti1-xWx)4O15,CLBTWx]陶瓷的铁电性能、介电性能和压电性能的影响,得到了W6 掺量与铋层状CLBTWx陶瓷性能的关系.用X射线衍射和扫描电镜研究了W6 掺量对铋层状CLBTWx陶瓷微观结构和物相的影响,探讨了W6 掺杂改性的机理.结果表明:随着W6 掺量的增加,CLBTWx陶瓷的介电常数(ε)先增大后减小;介质损耗(tanδ)先减小后增大;压电应变常数(d33)先增大后减小;剩余极化强度(Pr)先增大后减小然后再增大再减小;矫顽场(Ec)变化规律与Pr的相同.当W6 掺量为0.025mol时,可得到综合性能好的无铅铋层状CLBTWx陶瓷,其烧结温度为1 120～1 140℃时,CLBTWx陶瓷的ε=183.15;tanδ=0.00446;d33=14×10-12C/N;2Pr=26.7μC/cm2;2Ec=220kV/cm.该类材料适合于制备铁电随机存取存储器和高温高频压电器件.W6 掺杂从生成钙空位或铋空位、形成焦绿石相、促进陶瓷致密化、偏析晶界影响陶瓷晶粒的均匀生长等方面来影响铋层状CLBTWx陶瓷性能和结构.     

Study on the characteristics of ferroelectric electron emission

Electron emission from ferroelectric cathodes is commonly suggested as an electron source for different applications due to its special characteristics such as high current density, easy treatment and operation. In this experimental research, the electron emission properties of ferroelectric cathodes made of lanthanum-doped lead zirconate–titanate (PLZT) ceramic are studied. The electron beam spot shape was recorded via proximity-imaging techniques.     

Dielectric, Ferroelectric and Piezoelectric Studies of PMN Modified PLZT Ceramics

Dielectric, ferroelectric and piezoelectric properties of xPb(Mg_1/3Nb_2/3)O₃-(1-x)(Pb_0.988 La_0.012)(Zr_0.535Ti_0.465)O₃ ceramic system synthesized through columbite precursor method are investigated. X-ray diffraction patterns of ceramics indicated pseudocubic phase formation with pyrochlore phase. Grain growth (4.47 μ m) and apparent density (7.68 gm/cm³) enhanced remarkably in 0.8PMN-0.2PLZT composition, respectively. Increasing PMN content remarkably increased both room temperature dielectric permittivity (ε_RT = 2316) and dielectric maximum (ε_Tc = 24747) in 0.6PMN-0.4PLZT composition, respectively. PMN substitution in PLZT system enhanced the ferroelectric remanent (P_r = 28.4 μ C/cm²) and spontaneous (P_s = 31.2 μ C/cm²) polarization while coercive field (E_c) continuously decreased in xPMN-(1-x)PLZT system. PMN modification in PLZT system influenced piezoelectric properties (d₃₃, k_p and k_t) throughout the PMN-PLZT system.     

Effect of composition and grain size on dielectric,ferroelectric and induced strain behavior of PLZT/ZrO2 composites

Lead lanthanum zirconate titanate ceramics (PLZT) are well known for their excellent dielectric, piezoelectric and ferroelectric properties. In this study, PLZT 9/70/30, 9/65/35 and 9/60/40 ceramics were prepared by vibro-milling mixed-oxide method. All compositions of powders were uniaxial pressed in pellets and sintered at the temperatures of 1200–1275 °C with various soaking times of 2, 4 and 6 h. The X-ray diffraction (XRD) patterns confirmed that all the PLZT samples had perovskite structure with ZrO₂ as a second phase and PLZT/ZrO₂ composite structure was formed. Dielectric behavior at the frequency of 1 kHz showed broad peak indicating relaxor ferroelectric behavior and the difference of the temperature at maximum dielectric at different frequencies increased when Zr:Ti ratio increased. Polarization with electric field (P-E loop) at room temperature showed that when Zr:Ti ratio increased, the coercive field decreased resulting from crystal structure change from tetragonal to rhombohedral. Induced strain with electric field depended on microstructure where the value of S_max/E_max tended to decrease with increasing grain size. It can be concluded that dielectric and ferroelectric behavior predominantly depended on composition of PLZT ceramics and induced strain behavior predominantly depended on grain size of PLZT ceramics.     

Transparent lead lanthanum zirconate titanate (PLZT) ceramic fibers for high-frequency ultrasonic transducer applications

This paper presents fabrication of transparent lanthanum zirconate titanate (PLZT) fibers using extrusion technique. The diameter of the sintered PLZT fiber is about 400-μm, and the fibers exhibit very good transparency. Measured dielectric constant, remnant polarization and coercive field of PLZT fiber were found to be 2340, 22.5-μC/cm², and 9.8-kV/cm, respectively. The transparent piezoelectric materials may exhibit great potential for Photoacoustic (PA) imaging and hybrid intravascular imaging combining OCT and ultrasound imaging by using the transparent fiber as the path of light propagation and ultrasonic transducer material. In our study, these transparent PLZT fibers were designed to fabricate two types of high-frequency ultrasonic transducers: small aperture single PLZT fiber/epoxy composite and large aperture 1–3 PLZT fiber/epoxy composite ultrasonic transducers. Besides, a 20-μm tungsten wire phantom and the cornea of the porcine eye were also imaged with the 1–3 PLZT fiber/epoxy composite ultrasonic transducer to demonstrate its imaging capability.     

Electron emission from Pb0.88La0.08(Zr0.65Ti0.35)O3 ferroelectric ceramics

The electron emission characteristics of PLZT 8/65/35 ferroelectric are studied. High current density has been obtained from PLZT 8/65/35 ferroelectric cathode. The source of the disturbance in the experiment is discussed and several methods to reduce the disturbance are proposed. It is discovered that there is a voltage threshold, and the electron emission will not occur until the amplitude of the pulse exceeds the threshold. Moreover, there are two current peaks in the FE electron emission curves, the primary peak remains stable in location and intensity, while the secondary one shows instability during repeating experiments.     

Temperature Dependence of Electric‐induced Light Scattering Performance for PLZT Ceramics

PLZT (7.45/71/29) ceramics with fully dense microstructure and high transmittance were fabricated by a hot‐press sintering method. The effects of temperature on the phase structure, ferroelectric property, and electric‐induced light scattering performance of the PLZT ceramics were examined and analyzed. XRD patterns indicated that the PLZT sample tended to transform from rhombohedral phase to tetragonal phase with the temperature increasing. And the temperature‐dependent ferroelectric hysteresis behavior of the PLZT sample revealed the conversion of a saturated square hysteresis loop to a double‐loop‐like hysteresis loop, accompanied with the significant reduction in coercive field and remnant polarization. Depending on the temperature, the PLZT sample exhibited three different kinds of electric‐induced light scattering performance.     

Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates

(Pb_0.98, La_0.02)(Zr_0.95, Ti_0.05)O₃ (PLZT) thin films of 300 nm thickness were epitaxially deposited on (100), (110), and (111) SrTiO₃ single crystal substrates by pulsed laser deposition. X-ray diffraction line and reciprocal space mapping scans were used to determine the crystal structure. Tetragonal ((001) PLZT) and monoclinic M_A ((011) and (111) PLZT) structures were found, which influenced the stored energy density. Electric field-induced antiferroelectric to ferroelectric (AFE→FE) phase transitions were found to have a large reversible energy density of up to 30 J/cm³. With increasing temperature, an AFE to relaxor ferroelectric (AFE→RFE) transition was found. The RFE phase exhibited lower energy loss, and an improved energy storage efficiency. The results are discussed from the perspective of crystal structure, dielectric phase transitions, and energy storage characteristics. Besides, unipolar drive was also performed, providing notably higher energy storage efficiency values due to low energy losses.     

Investigation on the Electric‐Induced Light Scattering of PLZT Transparent Ceramics

Transparent ceramics of Pb_1?xLa_x(Zr_1?yTi_y)_1?x/4O₃ (PLZT) were fabricated by the two‐stage sintering method. The electric‐induced light scattering phenomenon for two compositions of PLZT ceramics was investigated. It was found that the composition with relatively bigger ferroelectric domains exhibits a relatively smaller light scattering driving field, but simultaneously a lower transparency in the original state. The dielectric properties, ferroelectric hysteresis loops, and ferroelectric domain structures of the two compositions were studied which are consistent with the electric‐induced light scattering results.     

PLZT驰豫铁电陶瓷偏压压电效应的研究

本文研究了铌掺杂的ＰＬＺＴ驰豫铁电陶瓷在不同直流偏压及温度下的介电常数ε３３,平面机电耦合系数ｋ和等效横向压电常数ｄ３１。实验表明,铌掺杂的ＰＬＺＴ驰豫铁电陶瓷ｄ３１值可由直流偏压控制及ｄ３１值的温度系数远小于ＰＭＮ－ＰＴ系陶瓷。室温上２ｍｏｌ％和３ｍｏｌ％的铌掺杂的ＰＬＺＴ１０／６５／３５驰豫铁电陶瓷在１０ＫＶ／ｃｍ的偏压下│ｄ３１│分别为２０５ｐＣ／Ｎ和１６０Ｃ／Ｎ。     

Artificially induced ferroelectric-like behavior in an antiferroelectric sandwich structure by interface engineering

Interface engineering is essential for achieving fascinating interfacial functionalities in a single all-oxide-interface-based device. In the present work, a sandwich structure (Pb_0.94La_0.06(Zr_0.95Ti_0.05)O₃ (PLZT)/HfO₂/ Pb_0.94La_0.06(Zr_0.95Ti_0.05)O₃) was fabricated via a chemical solution approach. A distinct “ferroelectricity-like” behavior with high P_max (～ 80 μC/cm²) and P_r (～ 36 μC/cm²) is demonstrated. The dielectric HfO₂ thin layer presents a tetragonal symmetry structure, which stabilizes a slight distorted structure of the upper PLZT layer (PLZT(T)) with a= 4.19(9) Å, b= 4.10(6) Å, β ～ 91.04?. In PLZT(T), the ferroelectric (FE) phase is identified as the matrix embedded with a small amount of AFE nanodomains, while the bottom PLZT layer (PLZT(B)) exhibits typical AFE incommensurately modulated structures. The near-interface structures in both PLZT layers are characterized by ferroelectric polarizations with head-to-tail configuration across the heterointerface. Such discontinuous, downward polarizations support the accumulation of oxygen vacancies at the heterointerface that facilitate the local polarization enhancement. It is the combination effect of stable ferroelectric polarization in the PLZT(T) layer, interfacial oxygen vacancies and large surface to volume ratio that leads to the superior polarization performance of the antiferroelectric sandwich structure. It indicates that interface engineering is a feasible approach to manipulate the ferroic behavior.