Electronic structure,chemical bonding and elastic properties of the first thorium‐containing nitride perovskite TaThN3

The full‐potential linearized augmented plane wave method with the generalized gradient approximation for the exchange and correlation potential (LAPW‐GGA) is used to understand the electronic and elastic properties of the first thorium‐containing nitride perovskite TaThN₃. Total and partial density of states, charge distributions as well as the elastic constants, bulk modulus, compressibility, shear modulus, Young modulus and Poisson ratio are obtained for the first time and analyzed in comparison with cubic ThN. The chemical bonding in TaThN₃ is a combination of ionic Th–N and of mixed covalent–ionic Ta–N bonds. The cubic TaThN₃ is semiconducting with the direct gap at about 0.65 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Acoustic characteristics of Ni–Nb–Zr–H glassy alloys by ultrasonic shear waves

The propagation characteristics of shear horizontally polarized (SH) waves passing through (Ni₄₂Nb₂₈Zr₃₀)_100–x H_x (x = 0–15.2) glassy alloys were investigated as a function of hydrogen content. With an increase in hydrogen content, the propagation time and main frequency of the receiving waves show increase and decrease, respectively, indicating expan‐ sion in average atomic distance which comes from solution of hydrogen. In sharp contrast to crystalline alloys, the decrease in damping ratio and the delay in phase with increasing hydrogen suggest a strong settlement of hydrogen into four‐coordination sites surrounded tetrahedrally by four Zr atoms and the resulting increase in dynamic elasticity, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Elasticity, band structure, and piezoelectricity of BexZn1−xO alloys

Lattice constants, elasticity, band structure and piezoelectricity of hexagonal wide band gap Be_xZn_1−xO ternary alloys are calculated using first-principles methods. The alloys' lattice constants obey Vegard's law well. As Be concentration increases, the bulk modulus and Young's modulus of the alloys increase, whereas the piezoelectricity decreases. We predict that Be_xZn_1−xO/GaN/substrate (x=0.022) multilayer structure can be suitable for high-frequency surface acoustic wave device applications. Our calculated results are in good agreement with experimental data and other theoretical calculations.     

Surface Tension and Shear Strain Contributions to the Mechanical Behavior of Individual Mg-Ni-Phyllosilicate Nanoscrolls

Some phyllosilicate compounds have the ability of spontaneous scrolling because of the size mismatch between the covalently bounded metal oxide and silica sheets. Their unique structure and high theoretically predicted Young's modulus (around 210–230 GPa) induce phyllosilicates’ application as reinforcing fillers. However, previous nanomechanical experiments with individual phyllosilicate nanoscrolls are in poor agreement with theory. The main reason for this is the low accuracy of experiments, which leads to large measurement errors compared to measured average values. Here, the study of the mechanical properties of synthetic (Mg_1–xNi_x)₃Si₂O₅(OH)₄ phyllosilicates is reported by testing a suspended nanoobject (a nanobridge) with an atomic force microscope (AFM). The Young's modulus of corresponding phyllosilicate model layers is also calculated by means of the density functional theory (DFT). The original AFM approach makes it possible to account for the probe slipping off the nanobridge and determine its boundary conditions. The measured Young's modulus values are considered within the models of surface tension and shear strain contributions. The shear strain appears to have a decisive impact on the measured Young's modulus (from 150 ± 70 GPa to 200 ± 210 GPa) and its spread.     

Microstructure,dielectric, and piezoelectric properties of 0.38Bi(Gax Sc1–x )O3–0.62PbTiO3 high temperature piezoelectric ceramics

0.38Bi(Ga_x Sc_1–x )O₃–0.62PbTiO₃ (BGSPTx) ceramics have been prepared by using the conventional mixed oxide method. X‐ray diffraction analysis revealed that BGSPTx has a pure perovskite structure, and the crystal symmetry of BGSPTx changed from rhombohedral to tetragonal with increasing Ga content (x). The Curie temperature (T_C) of BGSPTx ceramics is in the range of 448–467 °C for different x. The ferroelectric phase transition of BGSPTx was found to be of the first order type according to the Curie–Weiss law. For x = 0.125, BGSPTx ceramics show enhanced piezoelectric properties: piezoelectric constant d₃₃ = 420 pC/N and d₃₁ = –142 pC/N, planar and thickness electromechanical coupling factors k_p = 56.27% and k_t = 56.00%, respectively. The high‐T_C of BGSPTx coupled with its excellent piezoelectric properties suggests those future high‐temperature applications. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Impact of the Ga concentration on the microstructure of CuIn1–x Gax Se2

Cross‐sectional samples of CuIn_1–x Ga_x Se₂ layers grown by a three‐stage process were studied by means of electron backscatter diffraction (EBSD) in completed thin‐film solar cells. The microstructural analysis reveals a dependence of the average grain size on the gallium content x = [Ga]/([Ga] + [In]), with a maximum at x = 0.23. This result is correlated with structural measurements on CuIn_1–x Ga_x Se₂ powder samples showing that the ratio of the lattice constants c /a is equal to 2 for about the same x value. The pseudocubic crystal structure at about x = 0.23 may lead to reduced strain in the growing CuIn_1–x Ga_x Se₂ layer and therefore larger average grain sizes. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electronic structure and shearing in nanolaminated ternary carbides

We have studied shearing in M₂AlC phases (M=Sc,Y,La,Ti,Zr,Hf,V,Nb,Ta,Cr,Mo,W) using ab initio calculations. We propose that these phases can be classified into two groups based on the valence electron concentration induced changes in C₄₄. One group comprises M=V B and VIB, where the C₄₄ values are approximately 170 GPa and independent of the corresponding MC. The other group includes M=IIIB and IVB, where the C₄₄ shows a linear dependency with the corresponding MC. This may be understood based on the electronic structure: shear resistant bands are filled in M₂AlC phases with M=V B and VIB, while they are not completely filled when M=IIIB and IVB. This notion is also consistent with our stress-strain analysis. These valence electron concentration induced changes in shear behaviour were compared to previously published valence electron concentration induced changes in compression behaviour [Z. Sun, D. Music, R. Ahuja, S. Li, J.M. Schneider, Phys. Rev. B 70 (2004) 092102]. These classification proposals exhibit identical critical valence electron concentration values for the group boundary. However, the physical mechanisms are not identical: the classification proposal for the bulk modulus is based on MC-A coupling, while shearing is based on MC-MC coupling.     

Calculated elastic properties of M2AlC (M=Ti, V, Cr, Nb and Ta)

M₂AlC phases, where M is a transition metal, are layered ternary compounds that possess unusual properties. In this paper, we have calculated the elastic properties of M₂AlC, with M=Ti, V, Cr, Nb and Ta, by means of ab initio total energy calculations using the projector augmented-wave method. We have derived the bulk and shear moduli, Young's moduli and Poisson's ratio for ideal polycrystalline M₂AlC aggregates. We have estimated the elastic modulus of Cr₂AlC with 357.7 GPa while the values of all other phases are in the range 309±10 GPa. We suggest that this can be understood based on the calculated bond energies for the M-C bonds. Furthermore, our results indicate a profound elastic anisotropy of M₂AlC even compared to materials with a well-established anisotropic character such as α-alumina. Finally, we have estimated the Debye temperatures of M₂AlC from the average sound velocity.     

Synthesis of phosphorus‐carbide thin films by magnetron sputtering

Phosphorus‐carbide, CP_x (0.025 ≤ x ≤ 0.1), thin films have been synthesized by magnetron sputtering from pressed graphite–phosphorus targets. The films were characterized by X‐ray photoelectron spectroscopy, transmission electron microscopy and diffraction, and nanoindentation. CP_0.1 ex‐hibits C–P bonding in an amorphous structure with elements of curved graphene planes, yielding a material with unique short range order. These features are consistent with what has been predicted by our results of theoretically modeled synthetic growth of CP_x . The films are mechanically resilient with hardness up to 24 GPa and elastic recovery up to 72%. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

几种三元过渡金属碳化物弹性及电子结构的第一性原理研究

基于密度泛函理论平面波方法研究了六方WC型Re_xW_1－xC(x=1, 0.25, 0.75, 0),Re_0.5Os_0.5C和Os_0.5W_0.5C的晶体结构、弹性和电子结构性质.研究发现Re_0.25W_0.75C晶体具有优异的弹性性能及稳定性,其剪切模量(312 GPa)超过了所有其他实验合成和     

Oxygen vacancy induced ferromagnetism in rutile TiO2–x

First‐principles LDA + U calculations have been performed to study the effects of oxygen vacancies (V_O) on the electronic structure and magnetism in undoped rutile TiO_2–x . Instead of treated as an adjustive parameter, the value of U was determined by constrained‐density‐functional calculations. The calculated electronic structure reveals that the valence electrons released by V_O would occupy mainly the neighboring Ti:3d orbital which then becomes spin‐polarized due to intra‐atomic exchange interaction, thereby giving rise to the half‐metallic ferromagnetism. The magnetization induced by V_O in rutile TiO_2–x is almost proportional to the V_O concentration (x) for x > 0.0625, and becomes 0 for x ≤ 0.0417. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks

We measure surface recombination velocities (SRVs) below 10 cm/s on p‐type crystalline silicon wafers passivated by atomic–layer–deposited (ALD) aluminium oxide (Al₂O₃) films of thickness ≥10 nm. For films thinner than 10 nm the SRV increases with decreasing Al₂O₃ thickness. For ultrathin Al₂O₃ layers of 3.6 nm we still attain a SRV < 22 cm/s on 1.5 Ω cm p‐Si and an exceptionally low SRV of 1.8 cm/s on high‐resistivity (200 Ω cm) p‐Si. Ultrathin Al₂O₃ films are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is extremely low compared to the frequently used plasma‐enhanced chemical vapour deposition of silicon nitride (SiN_x). Our experiments on silicon wafers passivated with stacks composed of ultrathin Al₂O₃ and SiN_x show that a substantially improved thermal stability during high‐temperature firing at 830 °C is obtained for the Al₂O₃/SiN_x stacks compared to the single‐layer Al₂O₃ passivation. Al₂O₃/SiN_x stacks are hence ideally suited for the implementation into industrial‐type silicon solar cells where the metal contacts are made by screen‐printing and high‐temperature firing of metal pastes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of B2O3 on the structure and properties of tungsten–tellurite glasses

The elastic properties and Debye temperatures of xB₂O₃–70TeO₂–(30–x)WO₃, (0 ≤ x ≤ 30 mol%) glasses have been investigated using sound velocity measurements at 4 MHz. Ultrasonic and thermal parameters, combined with the results of IR spectroscopic analyses, were employed to explore the effect of B₂O₃ on the structure of tungsten–tellurite glasses. According to IR analysis, there is competition between WO₆ and TeO₄ units to form BO₄ units, and the vibrations of the tellurite structural units are shifted towards lower wavenumbers on the formation of non-bridging oxygens. It is assumed that B₂O₃ acts as a modifier by decreasing the glass-transition temperature T _g and increasing both the thermal stability and glass formation range of the tellurite glasses. The change in density and molar volume with B₂O₃ content reveals that the borate units are less dense than the tellurite structural units. The observed compositional dependence of elastic moduli is interpreted in terms of the effect of B₂O₃ on the coordination number of the tellurite units. A good correlation was observed between experimentally determined elastic moduli and those computed with the Makishima–Mackenzie model.     

First-principles study on electronic structure and elastic properties of Ti2SC

We have performed first-principles study on electronic structure and elastic properties of Ti₂SC. The absence of band gap at the Fermi level and the finite value of the density of states at the Fermi energy reveal the metallic behavior of this compound. The five independent elastic constants were derived and the bulk modulus, Young's modulus, shear modulus, and Poisson's ratio were determined. The high bulk modulus and hardness was found to be originated from the strong Ti 3d-S 2p hybridization. Such strong MA bonding is unusual in the MAX phases studied so far. Ti₂SC is elastically stable and exhibits highly elastic isotropy.     

Ab initio study of Os0.5W0.5B2, Re0.5W0.5B2, and Os0.5Re0.5B2 with high shear modulus

By using first‐principles calculations, the authors investigate the structural, mechanical, and electronic properties of experimentally synthesized Os_0.5W_0.5B₂. The calculated structural parameters and elastic properties are in good agreement with the experimental results. In addition, two new 5d transition‐metal diborides (Re_0.5W_0.5B₂ and Os_0.5Re_0.5B₂) are predicted to have promising large shear moduli. The latter mainly come from the non‐uniform distribution of valence charge density, which raises the value of the shear moduli. We discuss potentially high hardness in these materials. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spectroscopic investigation of the physicochemical origin of the spontaneous delamination of the sputtered amorphous carbon nitride films

We present in this study a spectroscopic investigation of the delamination of the amorphous carbon nitride (a-CN_x) films deposited by RF magnetron sputtering of a graphite target in Ar/N₂ gas mixture. The microstructure of the studied films have been analysed prior and after their delamination. The origin of the observed spontaneous delamination have been elucidated in terms of chemical reactions between water and CN bonds at the a-CN_x/Si interface, which support delamination crack advance.     

Electronic structure of the Co4Sn6Te6 ternary skutterudite phase

The electronic structure of Co₄Sn_6–x Te_6+x (x = 0, 1) ternary skutterudite systems has been investigated using ab ‐initio band structure computation. The x = 0 system is a semiconductor like the binary Co₄Sb₁₂, but with a lower band gap. The best dopant concentration for Co₄Sn₆Te₆ is estimated to be lower than that of Co₄Sb₁₂, with the highest electronic fig‐ ure‐of‐merit Z_eT for the n‐doped system. Finally, the increased charge transfer between the 8c Co and 24g Sn and Te atoms in Co₄Sn₆Te₆ compared to that of Co₄Sb₁₂ could be one reason for the observed decrease of thermal conductivity in ternary skutterudite systems. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Piezoresistivity in GaAs/InxGa1–xAs/AlAs superlattice structures

We report on a strong piezoresistive effect in GaAs/ In_x Ga_1–x As/AlAs superlattice structures fabricated on a GaAs‐base cantilever. The measurements of the piezoresistive properties were performed for tensile strains by static pressure experiments. The maximum gauge factor (GF) for the GaAs/In_x Ga_1–x As/AlAs epilayer can be estimated to 200, which is higher than the value of the gauge factor reported for Si transducers. Our results demonstrate a higher potential of GaAs/In_x Ga_1–x As/AlAs superlattice structures for the development of piezoresistive sensors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and role of the interfacial layers in VC-rich WC-Co cermets

The microstructure of WC-Co composites sintered with VC or with a mixture of VC and Cr₃C₂ is investigated by several techniques in order to understand the grain growth inhibition process. In this work, using the high-resolution transmission electron microscopy and high-resolution energy-filtering electron microscopy, we are able to study on the atomic scale the microstructure and composition of the phases present in the alloys. A thin (VW)C _x layer less than 1 nm thick covering all surfaces of WC grains and thin (VW)C _x platelets embedded in the WC grains are evidenced. Microsteps are observed at the interface between Co and WC along the ?11amp;2macr;0?_WC directions. Small (VW)C _x precipitates lie on the (0001)_WC and {10amp;1macr;0} facets of these steps. On the (0001) surface of WC grains, other stacking sequences of the metal planes are sometimes observed and, in particular, the occurrence of the compound (VW)₂C is shown. Owing to these observations a grain growth inhibition mechanism is proposed.     

Ultrasonic investigation of amorphous carbon in various frequencies at low temperatures from 2.1 to 300 K

Using pulse echo overlap measurement, the elastic behavior of amorphous carbon has been studied at ambient and low temperatures. The smaller ratio B/G of the bulk modulus to shear modulus and smaller Poisson's ratio σ at room temperature indicate that there is an intrinsic stiffening of transverse acoustic phonons in the amorphous carbon. The acoustic velocity and attenuation for longitudinal modes have been measured between 2.1 and 300 K at three frequencies of 7, 21 and 35 MHz, respectively. Their frequency and temperature dependence are observed. The elastic constant C₁₁ increases with decreasing temperature and show enhanced stiffening at low temperatures. In the 130-220 K region, the abnormal change and effect of longitudinal velocity and attenuation with temperature and frequency, and a phase transition associated with structure relaxations are discussed.