氧等离子体刻蚀CVD金刚石膜的影响机理

采用电子回旋共振(ECR)等离子体在不同的磁场位形和工作气压下刻蚀化学气相沉积(CVD)金刚石膜,运用双探针和离子灵敏探针法对等离子体进行了诊断,研究了等离子体参数对刻蚀效果的影响。结果表明:磁场由发散场向收敛场转变时,离子温度、电子温度和等离子体密度都随之增大,刻蚀效果逐渐增强;当工作气压由低气压向高气压变化时,等离子体参数先增大后减小,CVD金刚石膜表面粗糙度降低程度也出现了相同的趋势。     

氧回旋离子束刻蚀化学气相沉积金刚石膜

利用非对称磁镜场电子回旋共振等离子体产生的氧回旋离子束刻蚀了化学气相沉积金刚石膜,研究了工作气压和磁电加热电压对金刚石样品附近的离子温度和密度的影响,并分析了金刚石膜的刻蚀和机械抛光效果。结果表明:当工作气压为0.03 Pa,磁电加热电压为200 V时,离子温度和密度最大,分别为7.38 eV和 23.81010 cm-3 。在此优化条件下刻蚀金刚石膜4 h后,其表面粗糙度由刻蚀前的3.525 m降为2.512 m,机械抛光15 min后,表面粗糙度降低为0.517 m,即金刚石膜经离子束刻蚀后可显著提高机械抛光效率。     

圆筒电极对离子磁电加热的影响

高效的磁电加热不仅能够提高电子回旋共振(ECR)等离子体的离子温度,还能改善离子的径向和轴向分布,促进ECR等离子体在化学气相沉积金刚石膜刻蚀中的应用.将磁电加热系统中的圆环电极改进为圆筒电极,研究了圆筒电极对离子磁电加热的影响,对比了圆筒和圆环电极加热离子的区别.结果表明:在同一阳极偏压下,圆筒比圆环电极更有利于提高离子温度,圆筒电极加热时各径向位置的离子温度升高的幅度较大,其中圆筒电极内部的离子温度径向分布差异较大,而圆筒下游的离子温度径向分布比较均匀;磁电加热对离子密度的影响很小;采用圆筒电极加热时,有利于离子向轴向下游的输运,改善了离子的轴向均匀性.     

电子回旋共振等离子体特性及其对生长氮化镓晶膜的影响

为了解并优化在电子回旋共振等离子体辅助化学汽相沉积GaN晶膜的工艺研究中的等离子体特性,利用朗缪尔探针及法拉第筒系统地测量了离子密度(N_i)、等离子体势(V_p)、电子温度(T_e)及离子流强(J_i)等多个等离子体参量随微波功率(P_w)及沉膜室气压(p)变化的关系.给出了在P_w＝850W,p＝0.22Pa时,上述等离子体参量的轴向及径向分布.GaN晶膜的生长速率、电学及晶体学性能 关键词：     

大面积表面波等离子体的特性研究

介绍一种矩形反应腔体结构的表面波等离子体源，通过对垫层介质及天线结构的优化设计，产生了大面积均匀的等离子体.采用静电探针测量了等离子体参数(密度，电子温度)在不同运行条件(气压，功率)下的空间分布；采用扩散模型，数值模拟了等离子体密度在垂直方向上的空间分布，并比较好地解释了实验测量结果. 关键词： 表面波等离子体 狭缝天线 数值模拟 探针测量     

CVD金刚石中的氮对等离子体刻蚀的影响

采用非对称磁镜场电子回旋共振等离子体分别对沉积过程中掺氮和未掺氮的化学气相沉积金刚石膜进行了刻蚀研究, 结果表明: 掺氮制备的金刚石膜的刻蚀主要集中在晶棱处, 经过4h刻蚀后其表面粗糙度由刻蚀前的4.761 μm下降至3.701 μm, 刻蚀对金刚石膜的表面粗糙度的影响较小; 而未掺氮制备的金刚石膜的刻蚀表现为晶面的均匀刻蚀, 晶粒坍塌,刻蚀4h后其表面粗糙度由刻蚀前的3.061 μm下降至1.083 μm. 刻蚀导致表面粗糙度显著降低. 上述差别的主要原因在于金刚石膜沉积过程中掺氮导致氮缺陷在金刚石晶棱处富集, 晶棱处电子发射加强, 引导离子向晶棱运动并产生刻蚀, 从而加剧晶棱的刻蚀. 而未掺氮金刚石膜,其缺陷相对较少且分布较均匀 ,刻蚀时整体呈现为 (111) 晶面被均匀刻蚀继而晶粒坍塌的现象. 关键词： 掺氮 金刚石膜 刻蚀 非对称磁镜场     

基于数据采集系统的等离子体Langmuir探针诊断实验

 采用Langmuir探针、扫描电源和微机数据采集系统相结合,实时获得了等离子体的伏安特性曲线及参数计算结果。本数据采集系统是一个虚拟仪器系统,包括数据采集、分析测试和结果显示三部分,用来采集Langmuir探针的电流电压信号,并加以分析处理。整个测试过程非常快,可以在ms级的时间内完成,相对于手动测试,基于数据采集系统的Langmuir探针诊断实验得到的数据更为精确,电压测试范围更大,并能去除因为等离子体电位漂移而产生的曲线失真。根据所得的伏安曲线,讨论了等离子体的电子温度,离子密度等参数的计算方法。进一步研究发现电子温度随真空室气压增大而变小,离子密度随气压增大而变大。     

电子回旋共振离子源等离子体的密度测量

 诊断电子回旋共振离子源等离子体的传统方法是采用传统的单探针无发射时测量伏安曲线,并根据曲线的拐点由理论公式计算出的等离子体密度。本文设计并研制了等离子体密度的测量装置。采用单根朗缪尔探针（该探针可以用来发射电子）测量等离子体的伏安特性。在探针有发射和无发射两种状态下测量得到两条伏安曲线,根据这两条曲线的"分叉点"得到等离子体电位,然后根据该电位直接由计算机计算出电子温度、电子密度。采用该新方法,测量得到的等离子体参量空间电位约为17 V,悬浮电位约为-5 V,电子温度约为4.4 eV,离子密度为1.10×10¹¹cm^-3,与传统方法计算出的等离子体1.12×10¹¹cm^-3相比,两者相差仅1.8％,但新方法效率和精度更高。     

金刚石镀膜装置中的等离子体参数测量

利用平行马赫探针和单探针对金刚石镀膜装置中的等离子体漂移速度、,离子密度及电子温度进行了测量,采用ＣｈｕｎｇＫｙｕ－Ｓｕｎ理论对平行马赫探针数据进行分析得到的马赫数为０．２８,电子温度为５ｅＶ,等离子体流速约为９８０ｍ．ｓ＾－１。单探针测行离子密度在１０＾１８～１０＾２０ｍ＾－３的范围内,电子温度在２－８ｅＶ的范围内。     

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用HL-2A装置下偏滤器靶板上的14组嵌入式静电三探针阵列和外偏滤器室的电动扫描四探针组,测量了同一环向截面的内外中性化板上的电子温度、密度、悬浮电位及其分布,以及电子回旋加热(ECRH)实验期间的等离子体行为。研究了偏滤器中等离子体参数的分布及非对称性以及等离子体的形成、物理特性和改善粒子的约束特性。     

BEHAVIOR OF Ar PLASMA FORMED IN A HIGH DENSITY PLASMA SOURCE-AN ECR REACTOR

In order to develop the ultra-large scale integration(ULSI), low pressure and high density plasma apparatus are required for etching and deposit of thin films. To understand critical parameters such as the pressure, temperature, electrostatic potential and energy distribution of ions impacting on the wafer, it is necessary to understand how these parameters are influenced by the power input and neutral gas pressure. In the present work, a 2-D hybrid electron fluid-particle ion model has been developed to simulate one of the high density plasma sources-an Electron Cyclotron Resonance (ECR) plasma system with various pressures and power inputs in a non-uniform magnetic field. By means of numerical simulation, the energy distributions of argon ion impacting on the wafer are obtained and the plasma density, electron temperature and plasma electrostatic potential are plotted in 3-D. It is concluded that the plasma density depends mainly on both the power input and neutral gas pressure. However, the plasma potential and electron temperature can hardly be affected by the power input, they seem to be primarily dependent on the neutral gas pressure. The comparison shows that the simulation results are qualitatively in good agreement with the experiment measurements.     

PSII系统中微波ECR等离子体的朗缪尔探针诊断

用朗缪尔探针对一个新颖的双谐振腔多功能PSII系统的微波ECR等离子体进行了诊断,得出了会切场中工作气体压强和微波功率对等离子体密度和电子温度的影响,及真空室内等离子体的分布。     

Parameter space map of an electron cyclotron resonance plasma in acompact chamber

Ion current density measurements were made in an electron cyclotron resonance (ECR) plasma reactor for both argon and oxygen discharges. Spatial changes in the ion current density were also recorded across the reactor diameter for changes in pressure and power. These measurements revealed a minimum in the ion current density on the reactor axis. This observation has been explained as a consequence of the shape of the ECR region, which, in turn, is dependent on the mode of coupling. Current density measurements were made as a function of reactor pressure and microwave power for two different axial locations in the system. A Langmuir probe was also used at these two locations to measure the electron temperature as a function of these process conditions. It was observed that the ion current density and/or plasma density measured downstream from the ECR zone, increased significantly in the low-pressure/high-microwave power region. Results from this region of the operating parameter space have not previously been reported. Further existing models do not predict this observed increase in plasma density or ion current density. It has been proposed that a rarefication of the gas in the ECR region, as a result of gas heating, has acted to increase the outward diffusion of electrons from the ECR zone and, thus, has increased the ambipolar diffusion of ions to the downstream location. This proposal has been partially validated by experimental results in which the ion energy was measured as a function of reactor pressure and gas flow rate. The shape of the oxygen parameter space map differs significantly from that for Ar. The principal reasons for these changes are a number of different inelastic electron scattering mechanisms which effect the transport electrons out of the ECR zone and through ambipolar diffusion also the transport of ions. The second factor is the production of negative ionic species which varies with reactor pressure and, thus, T_e     

The design and application of electron cyclotron resonancedischarges

During the past ten years electron cyclotron resonance (ECR) plasma-processing technology has matured into a diverse assortment of ECR plasma reactor and plasma source design concepts and has been extensively applied to numerous low-pressure plasma processing applications. This paper reviews the substantial progress made in the design and application of ECR plasma technology in recent years. Five representative ECR reactor/source designs from large-area 450-cm² discharges to compact plasma sources inserted into molecular-beam epitaxy (MBE) machines are described in detail. The performance of these ECR devices is evaluated by computing performance figures of merit from the available experimental data. These calculations are then compared with the behavior as predicted from a global model of the discharge. This comparison suggests that global plasma models can be employed as an approximate method for ECR reactor design. More extensive diagnostics and numerical models that investigate the spatial variation of ion density and ion energy distributions are also presented. Several illustrative ECR plasma-processing applications are discussed. These include submicron etching of silicon, etching of III-V and II-VI electronic and photonic devices, and the epitaxial growth of GaN. The variety and the sophistication of these applications demonstrate that low-pressure high-density ECR plasma processing technology has evolved into a very useful, versatile group of plasma-processing machines     

Microwave power coupling with electron cyclotron resonance plasma using Langmuir probe

Electron cyclotron resonance (ECR) plasma was produced at 2.45 GHz using 200–750 W microwave power. The plasma was produced from argon gas at a pressure of 2 × 10^???4 mbar. Three water-cooled solenoid coils were used to satisfy the ECR resonant conditions inside the plasma chamber. The basic parameters of plasma, such as electron density, electron temperature, floating potential, and plasma potential, were evaluated using the current–voltage curve using a Langmuir probe. The effect of microwave power coupling to the plasma was studied by varying the microwave power. It was observed that the optimum coupling to the plasma was obtained for ~ 600 W microwave power with an average electron density of ~ 6 × 10¹¹ cm^???3 and average electron temperature of ~ 9 eV.     

Particle‐in‐cell/Monte Carlo simulation of electron and ion currents to cylindrical Langmuir probe

Electron and ion currents to a cylindrical Langmuir (electrostatic) probe were calculated using the particle‐in‐cell/Monte Carlo (PIC/MC) self‐consistent simulation for a neutral gas in the pressure range 2–3,000 Pa. The simulation enables us to calculate the probe currents even at high neutral gas pressures when the collisions of collected charged particles with neutral gas particles near the probe are important. The main aim of this paper is the calculation of probe currents at such high gas pressures and the comparison of the results with experimentally measured probe currents. Simulations were performed for two cases: (a) probes with varying radii in a non‐thermal plasma with high electron temperature at low neutral gas pressure of 2 Pa (in order to verify the correctness of our simulations), and (b) probe with the radius of 10 μm in the afterglow plasma with low electron temperature and a higher neutral gas pressure (up to 3,000 Pa). The electron probe currents obtained in case (a) show good agreement with those predicted by the orbital motion limited current (OMLC) theory for probes with radii up to 100 μm for the given plasma conditions. At larger probe radii and/or at higher probe voltages, the OMLC theory incorrectly predicts too high an electron probe current for the plasma parameters studied. Additionally, a formula describing the spatial dependence of the electron density in the presheath in the collisionless case is derived. The simulation at higher neutral gas pressures, i.e. case (b), shows a decrease of the electron probe current with increasing gas pressure and the creation of a large presheath around the probe. The simulated electron probe currents are compared with those of measurements by other authors, and the differences are discussed.     

射频偏置ECR-PECVD等离子体参数测量

利用双探针对ECR-PECVD装置中基片在射频偏置下的等离子体参数进行了测量。同时测量了在射频偏置下微波功率、磁场电流、进气量等参数对ECR-PECVD等离子体参数的影响。结果表明,在ECR-PECVD等离子体装置中,基片射频偏置对电子温度有影响,而等离子体密度主要由微波功率所决定。