具有高压互连线的多区双RESURF LDMOS击穿特性

对600V以上级具有高压互连线的多区双RESURF LDMOS击穿特性进行了实验研究,并对器件进行了二维、三维仿真分析.利用多区P-top降场层的结终端扩展作用以及圆形结构曲率效应的影响,增强具有高压互连线的横向高压器件漂移区耗尽,从而降低高压互连线对器件耐压的影响.实验与仿真结果表明,器件的击穿电压随着互连线宽度的减小而增加,并与P-top降场层浓度存在强的依赖关系,三维仿真结果与实验结果较吻合,而二维仿真并不能较好反映具有高压互连线的高压器件击穿特性.在不增加掩模版数、采用额外工艺步骤的条件下,具有30μm高压互连线宽度的多区双RESURF LDMOS击穿电压实验值为640V.所设计的高压互连器件结构可用于电平位移、高压结隔离终端,满足高压领域的电路设计需要.     

具有高压互连线的多区双RESURF LDMOS击穿特性

对600V以上级具有高压互连线的多区双RESURF LDMOS击穿特性进行了实验研究,并对器件进行了二维、三维仿真分析.利用多区P-top降场层的结终端扩展作用以及圆形结构曲率效应的影响,增强具有高压互连线的横向高压器件漂移区耗尽,从而降低高压互连线对器件耐压的影响.实验与仿真结果表明,器件的击穿电压随着互连线宽度的减小而增加,并与P-top降场层浓度存在强的依赖关系,三维仿真结果与实验结果较吻合,而二维仿真并不能较好反映具有高压互连线的高压器件击穿特性.在不增加掩模版数、采用额外工艺步骤的条件下,具有30μm高压互连线宽度的多区双RESURF LDMOS击穿电压实验值为640V.所设计的高压互连器件结构可用于电平位移、高压结隔离终端,满足高压领域的电路设计需要.     

半桥驱动芯片中LDMOS的设计仿真

借助工艺和器件仿真软件,对一种用于功率MOSFET和IGBT栅极驱动的半桥驱动芯片中的横向高压功率器件LDMOS进行了设计与仿真。该器件采用了双RESURF技术及双层浮空场板结构,通过对双层浮空场板层之间的距离以及双RESURF结构的ptop层的长度和浓度的优化设计,利用传统的Bi-CMOS工艺获得击穿电压689V和比导通电阻273×10–3.cm2的LDMOS。     

一种新型D-RESURF埋栅SOI LDMOS

提出了一种新型D-RESURF埋栅SOI LDMOS (EGDR-SOI LDMOS)结构,其栅电极位于P-body区的下面,可以在扩展的埋栅电极处形成多数载流子的积累层;同时,采用Double- RESURF技术,在漂移区中引入两区的P降场层,有效降低了器件的比导通电阻,并提高了器件的击穿电压.采用二维数值仿真软件MEDICI,对器件的扩展栅电极、降场层进行了优化设计.结果表明,相对于普通SOI LDMOS,该结构的比导通电阻下降了78%,击穿电压上升了22%.     

采用双层栅极场板结构的LDMOS器件优化设计

研究了一种N型50 V RFLDMOS器件的结构。该类型器件对击穿电压BV和导通电阻R_(DSon)等直流参数具有较高要求,一般采用具有两层场板的RESURF结构。通过Taurus TCAD仿真软件对器件最关键的两个部分即场板和N型轻掺杂漂移区进行优化设计,在提高器件击穿电压BV的同时,降低了其导通电阻R_(DSon)。最终仿真得到的击穿电压BV为118 V,导通电阻R_(DSon)为23?·mm。     

三端自由高压LDMOS器件设计

应用RESURF原理，设计了三端自由的高压LDMOS器件。采用虚拟制造技术，分析比较了多种结构，对器件结构进行了优化。设计了与常规CMOS兼容的高压器件结构的制造方法和工艺。采用虚拟制造，得到NMOS和PMOS虚拟器件，击穿电压分别为350V和320V。     

基于RESURF理论的SOI LDMOS 耐压模型研究

对SOI LDMOS器件的击穿电压进行了研究,建立了适用于该器件的RESURF耐压模型,获得了表面电势和电场分布解析表达式,给出了SOI LDMOS器件漂移区的最优浓度,在此基础上将该模型嵌入半导体工艺模拟以及器件模拟软件(Sentaurus TCAD)中,并对SOI LDMOS器件的表面电场分布、击穿特性和I-V特性...     

700V三层RESURF nLDMOS优化设计

提出了一种利用高能离子注入形成的700 V三层RESURF结构nLDMOS.与双RESURF结构漂移区表面注入形成P-top层不同,三层RESURF结构在漂移区内部形成P型埋层,漂移区表面保留一条N型导电通路,导通电阻有所降低.利用Sentaurus TCAD仿真软件,分析各参数对器件击穿电压和导通电阻的影响.与普通单RESURF和双RESURF结构相比,三层RESURF LDMOS器件的优值(FOM)得到提高,三种结构的优值之比为1∶1.75∶2.03.     

600伏高压LDMOS的实现

综合利用RESURF技术、内场限环技术及双层浮空场板技术，充分降低高压LDMOS的表面电场，使用常规低压工艺，最终实现600伏高压LDMOS。本文介绍了此高压LDMOS的设计方法、器件结构、制造工艺和测试结果。     

两层金属场极板高压LDMOS的优化设计

采用场极板结终端技术提高LDMOS击穿电压,借助二维器件仿真器MEDICI软件对基于体硅CMOS工艺500V高压的n-LDMOS器件结构和主要掺杂参数进行优化,确定漂移区的掺杂浓度(ND)、结深(Xj)和长度(LD)。对多晶硅场极板和两层金属场极板的结构参数进行模拟和分析,在不增加工艺复杂度的情况下,设计一种新型的具有两层金属场极板结构的500Vn-LDMOS。模拟结果表明,双层金属场极板结构比无金属场极板结构LDMOS的击穿电压提高了12%,而这两种结构LDMOS的比导通电阻(RS)基本一致。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.