Oxyacetylene ablation of (Hf0.2Ti0.2Zr0.2Ta0.2Nb0.2)C at 1350 − 2050 °C

Ablation resistance of a multi-component carbide (Hf_0.2Ti_0.2Zr_0.2Ta_0.2Nb_0.2)C (HTZTNC) was investigated using an oxyacetylene flame apparatus. When the surface temperature of the HTZTNC was below 1800 °C, (Nb, Ta)₂O₅, (Hf, Zr)TiO₄, and (Hf, Zr)O₂ were found to be the main oxidation products, while at higher temperature, formation of (Hf, Zr, Ti, Ta, Nb)O_x was favored and its content gradually increased with the increase in ablation temperature. Based on the ablation results and thermodynamic simulation analysis, a possible ablation mechanism of HTZTNC was proposed. Active oxidation of TiC and outward diffusion of TiO were demonstrated to occur during the ablation process, which constitute the critical steps for the ablation of HTZTNC. These results can contribute to the design of ablation resistant ultra-high-temperature ceramics.     

Ablation behavior of high-entropy carbides ceramics (Hf0.2Zr0.2Ta0.2Nb0.2Ti0.2)C upon exposition to an oxyacetylene torch at 2000 °C

The ablation performance of a high-entropy ceramic carbide, (Hf_0.2Zr_0.2Ta_0.2Nb_0.2Ti_0.2)C, was performed by oxyacetylene ablation flame, simulating the extreme service environment at 2000 ºC. Phase and microstructure characterization at multi-length scales was carried out. During ablation, a compositionally and microstructurally complex oxidation layer formed on the ablation surface, which consisted of a combination of (Zr_xHf_1?x)₆(Nb_yTa_1?y)₂O₁₇, Ti(Nb_xTa_1?x)₂O₇, and Ti_x(Zr_aHf_bNb_cTa_1?a-b-c)_1?xO₂. Based on the microstructure information, the ablation mechanisms were proposed considering the oxidation thermodynamics and kinetics. Comparable rates of O inward diffusion and Ti outward diffusion are suggested, and a particular innermost dense layer composed of isolated (Zr_xHf_1?x)₆(Nb_yTa_1?y)₂O₁₇ grains embedded in a continuous Ti(Nb_xTa_1?x)₂O₇ matrix is considered to be beneficial for a better ablation resistance.     

Ablation behavior of (Hf–Ta–Zr–Nb–Ti)C high-entropy carbide and (Hf–Ta–Zr–Nb–Ti)C–xSiC composites

The ablation behavior of (Hf–Ta–Zr–Nb–Ti)C high-entropy carbide (HEC-0) was investigated using a plasma flame in air for different times (60, 90, and 120 s) at about 2100°C. The effect of SiC content on the ablation resistance of HEC–xSiC composites (x = 10 and 20 vol%) was also studied. The linear ablation rate of HEC-0 decreases with increasing ablation time, showing the positive role of the oxide layer with a complex composition. The linear ablation rate of HEC–10 vol% SiC (0.3 µm s⁻¹) is only a 10th of that of HEC-0, showing a significant improvement in ablation resistance, probably due to the formation of a protective oxide layer containing melted SiO₂ and refractory Hf–Zr–Si–O oxides.     

(Ti,Mo,W,Ta,V,Nb)(C,N)多元陶瓷相的价电子结构

运用固体与分子经验电子理论(EET理论)计算了(Ti,Mo,W,Ta,V,Nb)(C,N)多元陶瓷相的价电子结构.结果表明,价电子结构参数(nA)随碳化物添加量的增加而增加.不同碳化物对价电子结构参数的影响不同,其中VC的影响最为显著.价电子结构参数(nA)可以用来评价金属陶瓷的力学性能,提出了相关的判据关系式.     

Wear behavior of (Mo–Nb–Ta–V–W)C high-entropy carbide

Wear characteristics of an (Mo–Nb–Ta–V–W)C high-entropy carbide were investigated using ball-on-flat technique. The experimental material with a high relative density of 99.0%, single phase, average grain diameter of 10.7 μm, and nanohardness of grains 28.6 GPa was prepared by ball-milling and two-step field-assisted sintering. The tribological test was realized during dry sliding in air with the SiC ball as tribological partner at applied loads 5, 25, and 50 N. The microstructure, deformation, and damage characteristics were studied using scanning electron microscopy and confocal electron microscopy. The friction coefficient values during the test with 5 and 25 N were very similar and stable, with a value of approximately .4, whereas during the test with 50 N, it decreased from the value of .48–.42. The specific wear rate increased with increasing load from 3.71 × 10^–7 mm³/N m at 5 N to 2.59 × 10^–6 mm³/N m at 50 N. The dominant wear mechanism was mechanical wear with intensive grains pullout, fracture, and powder formation, without visible tribochemical reactions and tribo-layer formation. The wear rate decreased due to the created rolling contacts among the tribopartners thanks to the hard and spherical nanopowders present.     

高介电陶瓷Ag0.9A0.1(Nb0.8Ta0.2)O3(A=Li,Na,K)的研究

采用传统的固相合成法制备了Ag（Nb0.8Ta0.2）O3（ANT）和Ag0.9A0.1（Nb0.8Ta0.2）O3（A=Li,Na,K）样品,并通过X射线衍射,扫描电镜和Raman光谱等手段对样品进行了表征。研究了Li^＋,Na^＋,K^＋取代Ag（Nb0.8Ta0.2）O3中的少量Ag^＋（摩尔比10％）对其介电性能的影响。结果表明：由于Li^＋,K^＋与Ag^＋半径差较大,它们的取代样品中出现了钙钛矿相以外的杂相峰,与未取代样品（ANT）相比介电常数（ε）和介电损耗（tgδ）变大;Na^＋取代样品的X射线衍射谱中只呈现单一的钙钛矿相特征峰．其ε,tgδ较未经取代样品（ANT）的值略有减小。     

(Ti0.25Zr0.25Nb0.25Ta0.25)C高熵陶瓷的制备、力学性能及氧化行为研究

本文通过对碳化物粉末进行放电等离子烧结(SPS),成功制备了(Ti_0.25Zr_0.25Nb_0.25Ta_0.25)C高熵陶瓷(HECs),系统研究了HECs的微观结构演变、力学性能和氧化行为。结果表明,单相HECs的形成温度为1 800 ℃,低于已报道的HECs烧结温度。1 900 ℃烧结的陶瓷晶粒细小,平均晶粒尺寸约7.5 μm,元素分布均匀,相对密度高达99.2%。1 800 ℃和1 900 ℃烧结的HECs的室温显微硬度值分别为30.9 GPa和33.2 GPa,断裂韧性值分别为(4.6±0.24) MPa·m^1/2和(4.5±0.31) MPa·m^1/2,高于大多数已报道的HECs。原位高温纳米压痕试验结果表明,HECs的硬度随温度的升高而降低,当温度达到500 ℃时,1 800 ℃和1 900 ℃烧结的陶瓷硬度分别下降到21.9 GPa和22.2 GPa,具有突出的高温稳定性。此外,HECs在温度低于500 ℃时无明显氧化,当温度超过650 ℃时会发生明显氧化,氧化速率随温度升高而增加。     

Porous (Ce0.2Zr0.2Ti0.2Sn0.2Ca0.2)O2-δ high-entropy ceramics with both high strength and low thermal conductivity

Single-phase (Ce_0.2Zr_0.2Ti_0.2Sn_0.2Ca_0.2)O_2-δ porous high-entropy ceramics have been in-situ fabricated by foam-gelcasting-freeze drying method at different temperatures. The microstructure, phase composition, and properties of the obtained ceramics were investigated. The results indicate that compared with other porous ceramics reported in the literatures, this type of ceramics exhibits excellent performance. The sample prepared at 1350 °C shows high porosity (88.6 %), low thermal conductivity (0.023 W m^-1 K^-1), and high compressive strength (1.48 MPa). The current study suggests that porous (Ce_0.2Zr_0.2Ti_0.2Sn_0.2Ca_0.2)O_2-δ high entropy ceramics are promising candidates for thermal insulation applications.     

光折变晶体K(Ta,Nb)O_3的熔盐法生长

本文首次报道在以K_2O-B_2O_3为主要成分的助熔剂体系中,用熔盐法在较低温度(T_(max)<1200℃)下成功地生长出K(Ta,Nb)O_3晶体,初步测量了生成晶体的一些性质。发现含钽量大于一定量后,K(Ta,Nb)O_3晶体在室温下以立方相存在,在生长温度至室温间无相变。本文还讨论了不同体系和添加剂对KTN晶体生长的影响。     

Sb3+掺杂Li0.02(Na0.53K0.48)0.98Nb0.8Ta0.2O3无铅压电陶瓷的电学性能

用传统的固相反应烧结法制备了Li0.02(Na0.53K0.48)0.98 Nb0.8Ta0.2O3-xSb2O3(LNKNT-xSb2O3)无铅压电陶瓷,研究了Sb3+掺杂对陶瓷晶体结构、显微结构及压电性能的影响.研究结果表明,Sb3+掺杂LNKNT陶瓷属于明显的“软性”掺杂,少量掺杂Sb3+能显著提高陶瓷的烧结及压电性能.当烧结温度为1100℃,掺杂量为2wt％时,LNKNT-0.02Sb陶瓷达到最好的压电性能:d33=193 pC/N,KP=49.5％,εr=779,Pr=16μC/cm2,应变达到2.3％,但机械品质因数QM从110.97降低到了85,介电损耗tanδ从1.66％增加到了2.01％.     

多弧离子镀(Ti,Cr)N镀层耐蚀性研究

采用多弧离子镀技术在高速钢表面制备了(Ti,Cr)N镀层,通过电化学工作站对镀层的塔菲尔曲线进行测试,分析镀层的耐腐蚀性,并采用质量变化法对电化学测试结果进行了验证。利用扫描电子显微镜观察了(Ti,Cr)N镀层腐蚀前后的微观形貌。结果表明,随电流比例ICr/ITi的增大,(Ti,Cr)N镀层表面晶粒尺寸逐渐减小。当ICr/ITi为90 A/60 A时,基体的自腐蚀电位由-0.750 V正移至-0.534 V,基体的腐蚀速率降低85.67%,耐蚀性提高。基体的腐蚀主要为点蚀和均匀腐蚀,(Ti,Cr)N镀层主要为小孔腐蚀。     

用RGS法同时测定Co Ni Cu Cr Ti和V

利用 RGS 法(正交分解法)进行多组分混合体系的同时测定原理和分析方法,对钴(Ⅱ)、镍(Ⅱ)、铜(Ⅱ)、铬(Ⅲ)、钛(Ⅳ)、钒(Ⅴ)六组分混合体系进行了同时测定,获得了较为满意的结果。     

(K,Na) (Nb,Ta,Sb)O3粉体制备及陶瓷介电性能研究

Ta/Sb掺杂的K0.5Na0.5Nb0.7TaxSb0.3-xO3(KNNSTx,x＝0.06,0.09,0.12,0.15,0.18,0.21, 0.24)粉体经水热合成,Ta、Sb对粉体物相、微观结构的影响被系统研究,烧结后陶瓷的微观结构、介电性能表明:陶瓷物相均具有纯钙钛矿结构;随着Ta含量的增加陶瓷晶粒尺寸逐渐增大,x＝0.09、0.12时较小粒径颗粒均匀分布在大颗粒的空隙之间,陶瓷密度增加;样品的介电常数随着Ta含量的增加x＝0.06～0.12逐渐降低,x＝0.15～0.24逐渐增加,居里温度均在350 ℃左右,且x＝0.09、0.12时陶瓷介电损耗较小.     

Ag2O掺杂对Li0.02(Na0.52K0.48)0.98Nb0.8Ta0.2O3无铅压电陶瓷电性能影响的研究

用传统的固相无压烧结法制备了Li0.02(Na0.52K0.48)0.98Nb0.8T0.2O3-xAg2O(0≤x≤0.1)无铅压电陶瓷,研究了Ag2O掺杂对陶瓷电性能的影响.研究发现,适当掺杂Ag2O能显著提高陶瓷的电性能,在1090℃的烧结温度下,当掺杂量为0.06时,陶瓷的压电性能最佳,d33、Kp、εr、Pr均达到最大(d33=229 pC/N,Kp=55.2％,εr=802,Pr=23 μC/cm2),矫顽场降到最低(Ec=12 kV/cm),应变达到2.0％.但Ag2O的添加使陶瓷的机械品质因数Qm由139.7降到了58.8,使介电损耗tanδ由1.38％增加到了2.7％.     

球磨对Mg_(1.8)Al_(0.2)Ni_(0.8)Mn_(0.2)合金性能影响的研究

分别采用固相扩散法和随后球磨两步法制备Mg1.8A l0.2N i0.8Mn0.2型贮氢合金,研究了球磨对合金相的形成和其电化学性能的影响。SEM测试显示,球磨过程有利于非晶相的形成。充放电测试表明,在100 mA/g放电电流条件下,经过球磨后的合金最高放电容量可达110 mAh/g左右,而单纯固相扩散法合成的合金放电容量约为80mAh/g。循环寿命测试,球磨的样品经过50次循环其容量衰减到40%,非球磨样品经25次的循环即衰减到同样程度。合金的电化学性能的改善与球磨中结构变化所产生的晶体缺陷有关。     

Pb(Zn,Nb)(Sn,Nb)(Zr,Ti)O3材料的介电性能研究

通过分析PZSN系材料的介电温度与介电频率曲线 ,发现PZSN系材料没有明确的相变温度 ,相变属弥散型相变。 12 5K与 4M处的介电频率峰对应O -Ti-O与O -Zr -O的偶极子的空间取向的响应行为 ,在顺电相T >Tcav时这种偶极子是不存在的 ,说明它们的行为与相变有关     

Ce_(0.8)Sm_(0.2)O_(1.9)-BaCe_(0.8)Sm_(0.2)O_(2.9)复合电解质的晶界电导

分别采用机械混合法和一步溶胶-凝胶法制备摩尔比为1:1的Ce_(0.8)Sm_(0.2)O_(1.9)(SDC)-BaCe_(0.8)Sm_(0.2)O_(2.9)(BCS)复合电解质,研究了不同制备方法对复合电解质SDC-BCS的显微结构以及电化学性能的影响。结果表明:相比于机械混合法,一步溶胶-凝胶法制得的复合电解质中的SDC和BCS两相的分布更加均匀;且与单相电解质SDC相比,复合电解质中SDC和BCS的相界能够为质子和氧离子提供传输通道,有利于晶界电导率的提高。另外,一步溶胶-凝胶法制备的复合电解质制作的单电池,具有较高的开路电压和最大功率密度,在700℃时分别达到0.914 V和0.281 W/cm~2。     

复合电解质BaCe_(0.8)Y_(0.2)O_(2.9)–Ce_(0.8)Gd_(0.2)O_(1.9)的化学稳定性

采用溶胶―凝胶燃烧法制备BaCe_(0.8)Y_(0.2)O_(2.9)(BCY)和Ce_(0.8)Gd_(0.2)O_(1.9)(GDC)粉末,并通过机械混合法制备不同摩尔比的BCY―GDC复合电解质粉末,在1 450℃烧结5 h获得BCY―GDC复合电解质。研究了复合电解质的化学稳定性及电化学性能稳定性。结果表明:BCY–GDC复合电解质在CO_2和沸水中的稳定性均高于单相BCY;当BCY―GDC复合电解质中的BCY摩尔分数小于70%时,试样在CO_2气氛和沸水中都具有良好的化学稳定性。基于BCY:GDC摩尔比为1:1的BCY―GDC复合电解质的单电池,在700℃工作20 h内的最大功率密度的稳定性高于基于BCY电解质的单电池。     

B掺杂对(Al0.2Zr0.8)4/3.8Nb(PO4)3固体电解质性能的影响

采用高温固相反应法对(Al_(0.2)Zr_(0.8))_(4/3.8)Nb(PO_4)_3的P位进行B掺杂,获得了固体电解质(Al_(0.2)Zr_(0.8))_((4+2x)/3.8)NbP_(3–x)B_xO_(12)(x=0～0.2)。利用X射线衍射、场发射扫描电子显微镜、电化学交流阻抗法、直流极化法等对样品的相组成、微观形貌和电性能进行表征。结果表明:不同比例B掺杂的固体电解质(Al_(0.2)Zr_(0.8))_((4+2x)/3.8)Nb P_(3–x)B_xO_(12)(x=0～0.2)均具有NASICON型三维结构,B掺杂并未影响固体电解质的物相结构;与(Al_(0.2)Zr_(0.8))_(4/3.8)Nb(PO_4)_3相比,B掺杂后的样品致密度增大,电导率提高。(Al_(0.2)Zr_(0.8))_(4.2/3.8)Nb P_(2.9)B_(0.1)O_(12)(x=0.1)具有最大的致密度和最高的电导率。在600℃时,样品电导率达到1.27×10~(–3 )S·cm~(–1),是未掺杂样品的2倍;直流极化法测试证实,样品为纯Al~(3+)传导,电子传导可忽略不计。     

Domain configuration and piezoelectric properties of (K0.50Na0.50)1−xLix(Nb0.80Ta0.20)O3 ceramics

Domain structure plays an important role in determining piezoelectric properties of ferroelectric materials. However, limited studies have been carried out on the domains of (K,Na)NbO₃-based lead free ceramics. The domain configuration, domain reversal behavior and piezoelectric properties of (K_0.50Na_0.50)_1−xLi_x(Nb_0.80Ta_0.20)O₃ (KNN-Li_x) ceramics with x = 0.02, 0.035 and 0.05, were studied in this research. It was observed that ceramics with different phases show distinctly different domain configurations and domain reversal behaviors. When compared to other two compositions, x = 0.035 with coexistent orthorhombic-tetragonal phases at room temperature was found to possess curved domain stripes and larger average domain width, leading to optimal piezoelectric properties with d₃₃* = 260 pm/V and k_p = 48%. Based on the microstructures, polarization hysteresis loops and unipolar strain curves under high electric field, it was concluded that the larger domain size and easier domain switching are due to the coexistence of orthorhombic and tetragonal phases, account for the improved properties in KNNT-Li_0.035 ceramics.