Si和GaAs衬底上的ZnTe、CdTe分子束外延材料的晶向倾角

本文采用X射线双晶衍射二次测量法对φ76mm Si(211)和GaAs(211)B衬底上生长的ZnTe和CdTe外延层的晶向倾角进行了测量,发现对于Si和GaAs衬底,外延层的[211]均绕外延层与衬底的[0-11]复合轴朝[111]倾斜,其晶向倾角与晶格失配呈线性关系;通过实际测量验证了在外延层探测到的[133]峰代表[211]关于[111]旋转180°的[255]孪晶向.     

利用Al/AlAs中间层调控GaAs在Si(111)上外延生长的研究

为了实现Ⅲ-V器件在硅基平台上单片集成,近年来Ⅲ-V半导体在硅衬底上的异质外延得到了广泛研究。由于Ⅲ-V半导体与Si之间大的晶格失配以及晶格结构不同,在Si上生长的Ⅲ-V半导体中存在较多的失配位错及反相畴,对器件性能造成严重影响。而Si(111)表面的双原子台阶可以避免Ⅲ-V异质外延过程中形成反相畴。本文利用分子束外延技术通过Al/AlAs作为中间层首次在Si(111)衬底上外延生长了GaAs(111)薄膜。通过一系列对比实验验证了Al/AlAs中间层的插入对GaAs薄膜质量的调控作用,并在此基础上通过低温-高温两步法优化了GaAs的生长条件。结果表明Al/AlAs插层可以为GaAs外延生长提供模板,并在一定程度上释放GaAs与Si之间的失配应力,从而使GaAs薄膜的晶体质量得到提高。以上工作为Ⅲ-V半导体在硅上的生长提供了新思路。     

热壁外延制备InAs/Si(211)薄膜及其电学性能研究

采用热壁外延(Hot Wall Epitaxy,HWE)沉积系统在单晶Si(211)衬底表面制备了InAs薄膜,研究了不同生长温度(300℃、350℃、400℃、450℃和500℃)对薄膜材料结构及其电学性能的影响.通过X射线衍射(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、霍尔(Hall)测试等,对InAs/Si(211)薄膜的晶体结构、表面形貌及电学参数进行了测试分析.结果表明:采用HWE技术在Si(211)衬底表面成功制备了InAs薄膜,薄膜具有闪锌矿结构并沿(111)方向择优生长.随着生长温度从300℃升高到500℃,全峰半高宽(FWHM)先减小后增大,生长温度为400℃时薄膜的晶粒尺寸最大为73.4 nm,载流子浓度达到1022 cm-3,霍尔迁移率数值约为102 cm2/(V·s),说明优化生长温度能够降低InAs薄膜的缺陷复合,使薄膜结晶质量和电学性能得到提高.SEM及AFM的测试结果显示由于较高的晶格失配及Si衬底斜切面(211)的特殊取向,在Si(211)衬底上生长的InAs薄膜主要为三维层加岛状(S-K)生长模式,表面粗糙度(Ra)随温度的升高先减小后增大,400℃时薄膜的平均表面粗糙度Ra为48.37 nm.     

衬底温度对碲化镉薄膜结构及光学性能的影响

碲化镉(CdTe)因具有良好的光电性能和吸收性能经常被作为太阳电池的吸收层材料.以纯度为99.99;的CdTe陶瓷靶为靶材在玻璃衬底上采用射频磁控溅射的方法制备了一系列的CdTe薄膜,研究了衬底温度对样品薄膜的厚度、结构和光学性能的影响.结果表明:随着衬底温度的增加薄膜的厚度在逐渐地减少;制备的薄膜都是立方闪锌矿结构且具有高度的(111)面择优取向;薄膜对可见光有较好的吸收性能,随衬底温度的增加而减小.     

硅基上Si1-xGex合金的外延生长及性能研究

硅基上高质量的异质外延生长是实现高性能微电子器件的基础,本文通过低温分子束外延技术在Si衬底上实现了全组分的Si1-x Gex(0相似文献   

热丝CVD法在单晶硅衬底上低温外延生长Si和Ge薄膜的研究

采用热丝CVD法在单晶Si衬底上进行了Si和Ge 薄膜的低温外延生长,用XRD和Raman谱对其结构性能进行了分析.结果表明:在衬底温度200 ℃时,Si(111)单晶衬底上外延生长出了Raman峰位置为521.0 cm-1;X射线半峰宽(FWHM)为5.04 cm-1.结晶质量非常接近于体单晶的(111)取向的本征Si薄膜;在衬底温度为300 ℃时,在Si(100)单晶衬底上异质外延,得到了Raman峰位置为300.3 cm-1的Ge薄膜,Ge薄膜的晶体取向为Ge(220).研究表明热丝CVD是一种很好的低温外延薄膜的方法.     

氮化物宽禁带半导体的MOCVD大失配异质外延

以氮化镓(GaN)、AlN(氮化铝)为代表的Ⅲ族氮化物宽禁带半导体是研制短波长光电子器件和高频、高功率电子器件的核心材料体系.由于缺少高质量、低成本的同质GaN和AlN衬底,氮化物半导体主要通过异质外延,特别是大失配异质外延来制备.由此导致的高缺陷密度、残余应力成为当前深紫外发光器件、功率电子器件等氮化物半导体器件发展的主要瓶颈,严重影响了材料和器件性能的提升.本文简要介绍了氮化物半导体金属有机化学气相沉积(MOCVD)大失配异质外延的发展历史,重点介绍了北京大学在蓝宝石衬底上AlN、高Al组分AlGaN的MOCVD外延生长和p型掺杂、Si衬底上GaN薄膜及其异质结构的外延生长和缺陷控制等方面的主要研究进展.最后对Ⅲ族氮化物宽禁带半导体MOCVD大失配异质外延的未来发展做了简要展望.     

超薄全局应变硅薄膜的应变弛豫研究

采用Ge浓缩法制备了高质量超薄绝缘体上锗硅(SiGe-on-insulator,SGOI)材料,然后在SGOI上通过超高真空化学气象沉积(UHVCVD)法外延了厚度为15 nm的超薄全局应变硅单晶薄膜,使用电子束光刻和反应离子刻蚀在样品上制备了一组纳米级尺寸不等的应变硅线条和应变硅岛,并利用TEM、SEM、Raman等分析手段表征样品.实验结果表明,本文制备的应变硅由于其直接衬底超薄SiGe层的低缺陷密度和应力牵制作用,纳米图形化的应变Si弛豫度远小于文献报道的无Ge应变硅或者具有Ge组分渐变层SiGe衬底的应变Si材料.     

裂纹对Si衬底GaN基LED薄膜应力状态的影响

本文通过XRD和PL等分析方法研究了在Si衬底生长的GaN基LED外延薄膜n型GaN层和InGaN阱层的应力状态,以及裂纹对其应力状态的影响.XRD结果表明:在Si衬底生长的GaN基LED外延薄膜n型GaN层受到张应力,在受到一定的外加应力后会以裂纹及裂纹增生的方式释放.随着裂纹数量的增加,n型GaN层受到的张应力逐渐减小,但仍处于张应力状态;n型GaN层张应力的减小使得InGaN阱层受到的压应力增大.PL分析进一步表明:InGaN阱层受到的压应力增大使得量子限制Stark效应更加明显,禁带宽度减小,发光波长表现为红移.     

GaSb薄膜生长的RHEED研究

采用分子束外延技术,在GaAs衬底上生长GaSb薄膜时,利用反射式高能电子衍射仪(RHEED)对衬底表面清洁状况、外延层厚度等进行在线监控.通过RHEED讨论低温缓冲层对GaSb薄膜表面结构和生长机制的作用,可以估算衬底温度,并能计算出薄膜的生长速率.实验测量GaSb的生长周期为1.96s,每秒沉积0.51单分子层.低温缓冲层提高了在GaAs衬底上外延GaSb薄膜的生长质量.     

Effects of CdCl2 treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

The structural, morphological and optical properties of vacuum‐evaporated CdTe thin films were investigated as a function of substrate temperature and post‐deposition annealing without and with CdCl₂/treatment at 400°C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl₂/annealing treatment. The microstructure observed for all films following the CdCl₂/annealing treatment are granular, regardless of the as‐deposited microstructure. The grain sizes are increased after the CdCl₂/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, E_g, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl₂/treatment at 400°C for 30 min respectively. A progressive sharpening of the absorption edge upon heat treatment particularly for the CdCl₂/treated was observed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and defect studies of CdTe particles

The paper reports the epitaxial growth of cadmium telluride (CdTe) particles by thermal deposition on cleaved planes of (001)NaCl and (001)KBr. Using high resolution transmission electron microscopy and electron diffraction it was shown that CdTe particles could have different orientation and phase (cubic or hexagonal) depending on the substrate temperature. Their most common defects are twins and stacking faults.     

Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances

Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, V_Cd and Te_Cd are summarized. We discuss their role in compensation, and in buffering the variations in shallow electronic levels in the grown ingot. We demonstrate that (∼2÷3 kT) variations of the Fermi energy increases carrier trapping to the deep levels. Trapping is manifest in a photoconductivity signal that can be studied by photoconductivity methods, thus allowing to monitor the spectroscopic‐grade material before fabricating the detectors. Our approach could be important in preventing the after‐glow effect and polarization. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High-temperature conductivity of solid and liquid CdTe

Conductivity of CdTe single crystals fabricated in our laboratory by vertical gradient freeze method was studied at temperatures 400–1200°C. Two clear slopes are seen — 0.7 eV in the solid and 4.6 eV in the liquid. Experimental value of electrical conductivity at the melting point 10 Ω⁻¹ cm⁻¹ was observed. A model explaining the experimental data is suggested.     

Compensation of CdTe by Doping With Gallium

Semi‐insulating CdTe single crystals doped with Ga were grown from the vapour phase by the modified Markov technique MMT. The study of the resistivity map in the cross‐sections cut a long the growth direction has been performed. The compensation phenomenon is analysed in the framework of the three levels Fermi‐statistic model. It is shown that a semi‐insulation behaviour throughout the ingot is due to the compensation of shallow impurities by the deep level. From the low ‐temperature photolum inescence spectra it was concluded that shallow donors (Ga_Cd) are partly compensated by (Ga_Cd‐V_Cd)^‐and (Ga_Cd‐Cd_Te) complexes and by residual acceptors (Na_Cd, Cu_Cd) . The microscopic structure of (Ga_Cd‐Cd_Te) complexis proposed based on the value of its local phonon mode and the growth conditions. A native defect like Te_Cd which has a deep level near the middle‐band‐gap is suppose to give a stable compensation and a tolerance for variation in shallow impurity concentrations.     

A Simple Synthesis,Characterization, and Properties of Poly(methyl methacrylate) Grafted CdTe Nanocrystals

A facile chemical synthesis of poly(methyl methacrylate) (PMMA) grafted CdTe nanocrystals (CdTe NCs) has been realized. Initially, CdTe NCs were prepared in a controlled manner using 2-mercaptoehanol (ME) as a capping agent. Then, 3-(trimethoxysilyl) propyl methacrylate having C?C double bonds were anchored with ME capped CdTe NCs through condensation reaction. Subsequently, AIBN initiated in situ free radical polymerization provided PMMA-g-CdTe nanohybrids. The FT-IR investigation suggested the formation of robust covalent bonding between CdTe NCs and the organic PMMA segment. XPS analysis also confirmed PMMA-g-CdTe nanohybrids. The physical structure and morphology of the as-prepared nanohybrids were studied by XRD and TEM. The thermal stability of the hybrids was enhanced in comparison with pure PMMA as indicated by TGA analysis. The UV-Vis absorption and photoluminescence measurements of the PMMA-g-CdTe nanohybrids showed their potential optical properties.     

一种采用光学比较测角仪测量碲化镉晶体平行度的方法

对碲化镉晶体进行了光学加工,利用两台测量精度为1″的光学比较测角仪和一块平行度优于1″的平行平晶测量了其平行度,并且和光学加工过程中采用激光平面干涉仪测得的氟化钙陪片的平行度进行了比较,分析了这种测量方法的误差来源及大小.结果表明:采用此方法测得的碲化镉晶体的平行度和采用激光平面干涉仪测得的陪片的平行度相差不超过3″;此方法的误差主要来自于光学比较测角仪的测量误差和平行平晶的平行度误差,总误差最大不超过5″,能够满足碲化镉晶体平行度测试的精度要求.     

Photostimulated changes of properties of CdTe films

The effect of illumination during the close‐spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells were investigated. Data on comparative study by using X‐ray diffraction (XRD), scanning electron microscopy (SEM), absorption spectra and conductivity‐temperature measurements of CdTe films prepared by CSS method in dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate and the grain size of CdTe films grown under illumination is higher (by factor about of 1.5 and 3 respectively) than those for films prepared without illumination. The energy band gap of CdTe films fabricated by both technology, determined from absorption spectra, is same (about of 1.50 eV), however conductivity of the CdTe films produced by CSSI is considerably greater (by factor of 10⁷) than that of films prepared by CSSD. The photovoltaic parameters of pCdTe/nCdS solar cells fabricated by photostimulated CSSI technology (J_sc = 28 mA/cm², V_oc =0.63 V) are considerably larger than those for cells prepared by CSSD method (J_sc = 22 mA/cm², V_oc = 0.52 V). A mechanism of photostimulated changes of properties of CdTe films and improvement of photovoltaic parameters of CdTe/CdS solar cells is suggested. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Isothermal and Isochronal Studies of the Structural and Electrical Properties of CdTe

Cadmium telluride (CdTe) thin films were grown by thermal evaporation technique. The influence of post‐growth heat treatment, isothermal and isochronal, on the structural and electrical properties of these films were carried out. Multi phases were obtained as a function of the period and the value of annealing temperature. In isothermal annealing, the sheet resistance was dropped by many orders while in isochronal annealing it was increased fairly. A correlation between the temperature and the annealing time and the structural characteristics of these films was established in both type of annealing. The grain size and the sheet resistance were found greatly affected by the type of annealing as well as the temperature and the annealing time.     

Probabilistic electron density distribution in CdTe at RT and 200K

The bonding between the atoms in the II‐VI compound semiconductors has always been a subject of rigorous research because of their tremendous applications in a variety of fields. The bonding and ionic character in CdTe at 300 and 200 K have been determined quantitatively as well as qualitatively using single crystal X‐ray data sets and MEM (Maximum Entropy Method) as the tool for the reconstruction of the electron densities distributed within the unit cell. The ab‐initio band calculation of the total and valence charge densities have been carried out theoretically by means of the local density approximation (LDA) method in support of the experimentally derived MEM maps. The difference density maps show fewer errors between the theoretical and experimental charge density and thus gives credence to the results accordingly. Along the bonding direction [111], the mid‐bond electron densities are found to be 0.233 e/ų and 0.284 e/ų at 300 K and 200 K at distances 1.4026 Å and 1.4036 Å respectively. The densities along [100] and [110] show an increase in the charge concentration at the bond at lower temperatures. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim