He—Ne激光血管内照射对心肺疾病患者微循环的影响

Ｈｅ—Ｎｅ激光血管内照射对心肺疾病患者微循环的影响唐小山，马祥文，伍于斌（桂林市人民医院５４１００２）近年来低能量Ｈｅ—Ｎｅ激光血管内照射作为一种新疗法用于临床，本文总结６０例心肺疾病患者应用低能量Ｈｅ—Ｎｅ激光血管内照射治疗，自身对比观察治疗前后患...     

低能量He—Ne激光血管内照射治疗突发性耳聋的初步临床研究

低能量Ｈｅ—Ｎｅ激光血管内照射治疗突发性耳聋的初步临床研究陈向东，张笑如，章萍，刘润梅（河南医科大学附二院耳鼻喉科，郑州４５０００３）（河南医科大学激光医学研究中心，郑州４５００５２）高冰（河南省卫生职工医院病理教研室）低能量Ｈｅ一Ｎｅ激光血管内照射...     

低能量He—Ne激光血管内照射治疗双下肢静脉闭塞2例

低能量Ｈｅ一Ｎｅ激光血管内照射治疗双下肢静脉闭塞２例刘枢晓，候靖边，徐珍仙，王湘平（成都军区昆明总医院神经内科６５００３２）低能量激光血管内照射治疗闭塞性脑血管病已公认有明显效果，对改善血循环及血流动力学效果确切，近来我科用低能量Ｈｅ—Ｎｅ激光治疗失...     

低能量He－Ne激光血管内照射治疗脑梗塞30例疗效观察

低能量Ｈｅ－Ｎｅ激光血管内照射治疗脑梗塞３０例疗效观察鲍玉珍，董苓峰，夏维鸣，李迎新（天津第一医院，３０００１０）（天津医科大学，３０００７０）低能量Ｈｅ－Ｎｅ激光血管内照射血液疗法是近年来开展的一种高新的治疗技术，我院与天津医科大学自１９９４年５月...     

低能量He—Ne激光血管内照射治疗糖尿病合并冠心病的临床观察

用低能量Ｈｅ—Ｎｅ激光血管内照射（ＩＬＩＢ）糖尿病合并冠心病患者，研究了血液流变学和脂质过氧化物（ＬＰＯ）。结果证实了ＩＬＩＢ的治疗作用。     

低能量He－Ne激光血管内照射治疗脑梗塞、脑血栓形成60例临床观察

低能量Ｈｅ－Ｎｅ激光血管内照射治疗脑梗塞、脑血栓形成６０例临床观察常福生，黄咏梅（中国人民解放军４７７医院４４１００３）低能量Ｈｅ－Ｎｅ激光血管内照射（简称ＩＬＩＢ）是一项新的治疗方法。我院自１９９４年３月以来治疗脑梗塞、脑血栓形成各３０例，得到比较...     

激光穴位治疗小儿秋季腹泻疗效观察

对５０例小儿秋季腹泻进行Ｈｅ—Ｎｅ激光穴位治疗，结果表明治疗组疗效显著（４８ｈ，７２ｈ，Ｐ＜０．０１），并对该疗法的作用机理进行探讨。     

低能量He－Ne激光血管内照射治疗格林─巴利综合症急性期疗效观察

低能量Ｈｅ－Ｎｅ激光血管内照射治疗格林─巴利综合症急性期疗效观察张都峰，江华远，卢文献，杨联元（解放军第３７１医院神经内科）低能量Ｈｅ－Ｎｅ激光血管内照射（简ＩＬＩＢ）是近年来发展起的一种新的治疗方法。我科从１９９４年５月起用ＩＬＩＢ对３２例格林一巴...     

705低能量He－Ne激光血管内照射

７０５低能量Ｈｅ－Ｎｅ激光血管内照射高迅，杨世鼎（湖北省襄樊市第一医院）低能量Ｈｅ－Ｎｅ激光血管内照射血液作为药物手术以外的“第三疗法”自１９９１年引进后，在国内已对５０多种疾病，１０万多人次进行了治疗。大多数疗效明显，具有很好的发展前途。本文作者对...     

He—Ne激光血管内照射仪的展顾

Ｈｅ—Ｎｅ激光血管内照射仪的展顾许荣聚，里新阳（辽宁朝阳２３４医院，朝阳１２２０００）９３年仅有２—３个厂家研制Ｈｅ—Ｎｅ激光血管内照射仪，９４年就猛进到几十家，目前估计有上百个厂家、院校和研究所研制和生产此类仪器。除６３２．ｓｕｍ的激光波长外，现已...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.