绝热CMOS与传统CMOS接口电路的设计

为了将绝热CMOS电路嵌入到传统电路系统中替代耗能较大的部件，本文研究并设计绝热CMOS电路和传统CMOS电路两者之间的接口电路：传统CMOS到绝热CMOS （Traditional CMOS to Adiabatic CMOS, TC/AC）的接口电路、绝热CMOS到传统CMOS （Adiabatic CMOS to Traditional CMOS, AC/TC）的接口电路。这样传统CMOS电路可以通过TC／AC接口电路来驱动绝热CMOS电路，绝热CMOS电路可以通过AC／TC接口电路来驱动传统CMOS电路，从而可以利用具低功耗特性的绝热CMOS电路来降低整个电路系统的功耗，增强绝热CMOS电路的实用性。最后计算机模拟验证了TC／AC接口电路和AC／TC接口电路逻辑功能的正确性。     

1.5GHz CMOSECL输入接口的设计与测试

对一种高速CMOS ECL输入接口进行了分析研究,该接口包含一种双镜补偿的CMOS差分放大电路,采用0.18 μm CMOS工艺研制,实现了PECL电平兼容.经测试,该接口最高工作频率达1.5 GHz.     

一种CMOS功率开关反向电压保护电路

接口电路通常采用CMOS功率开关作为输出缓冲电路,在实际应用中经常受到反向电压的冲击,因此,必须设计相应的反向电压保护电路,以保证CMOS功率开关的安全.提出了一种新型的反向电压保护电路,能够在反向电压冲击CMOS功率开关时提供合理的衬底电压和栅极电压,抑制反向电流,保障器件安全.该电路简洁有效,不影响电路的输出驱动能力和瞬态响应特性.采用0.6 μm CMOS工艺,制作了一个包含保护电路的接口电路,测试结果表明,该保护电路能够在+12 V反向电压下为功率开关提供良好保护.     

电容型传感器接口电路的研究

设计了一种结构简单、新颖的电容型传感器接口电路.电路中放大器的第一级采用折叠式共源共栅结构,提供了较高的增益;第二级采用共源级结构,提高了输出摆幅;采用CMOS开关构成的开关电容电路提高了电路的精度.基于0.6μm CMOS工艺对电路进行了设计,并对整体接口电路进行了仿真.仿真结果表明,与传统的接口电路相比,该电路具有高增益与高精度的特点,从而更好地实现了对微小电容的检测.     

高精度电流检测接口保护电路

在电子系统中,CMOS接口集成电路是去各连线接点的入口。若这些外部接点操作错误,会因对地短路或因加上了导致闭锁关断的电压而损坏接口集成电路。图1所示电路通过检测过大的电流来保护CMOS接口集成电路。IC1对流入接口电路的电源电流Is进行监测,如果Is超过了设计的阈值,IC1便     

电致发光显示屏接口电路设计

介绍一款电致发光显示屏接口电路,它采用普通小型LC D接口,可以利用I2C接口和并行接口与外界通讯。该接口电路采用单片机处理显示数据;利用C PLD产生显示控制信号,采用"乒乓操作"对数据流进行控制。除介绍接口电路的硬件结构外,还讨论了单片机的开发程序设计流程。最后介绍了点阵显示器相关字库的生成和有限字符集的查表译码方法。     

PDP驱动芯片用RSDS接口电路设计

介绍了一种基于RSDS(减小摆幅差分信号传输)信号传输标准的PDP驱动芯片用接口电路设计,它包括PMOSFET输入CMOS差分放大器和电压源偏置电路.文章重点讨论了PMOSFET输入CMOS差分放大器的差模工作原理及影响其差模增益的因素.Spectre仿真结果表明,本文设计的RSDS接受器电路在输入信号频率为200 MHz的情况下能正常工作,实现了由RSDS信号转换为LVCMOS信号的功能.目前该接口电路已经应用于一款PDP驱动芯片中,作为高速数据传输接口.     

电流敏感IC可防止过电流损害

CMOS接口IC对于电子系统中的接线连接起到入口“门”的作用。如果误操作那些外部连接以致造成接地短路或造成闩锁结果的电压都可能会损害接口IC。图1所示电路是一个能够通过电流的敏感而保护CMOS接口的电路。IC监视到达接口电路的供电电流(Is),如果Is超过编程的阈值,便迅速从接口去掉电流和电压。在正常运作期间,来自IC_1输出端的电流(Is的1/2000)流经R_3达到逻辑低电平:IC_2的输出低于“或非”门的输     

BBD结构红外焦平面CMOS_TDI读出电路

BBD(戽链器件)因能与标准CMOS工艺兼容而受到了人们的重视.许多人开始研究基于BBD结构的红外焦平面读出电路,即以BBD结构实现时间延迟和积分功能(CMOS_TDI).基于CMOS的读出电路驱动时钟简单,采用标准逻辑电源电压工作,与外界电路之间的接口方便;并且工作电压较低,使读出电路可以实现微功耗;可以将信号读取和处理电路、驱动与控制电路甚至A/D转换器、数字信号处理电路以及全数字接口电路等完全集成在一起,实现所谓的"智能型"红外焦平面;另外,由于采用标准的CMOS工艺,因而又具有低成本的特点.     

适用于笔记本电脑的高性能CMOS LVDS驱动器的设计

提出了一种适用于笔记本电脑平板显示嚣接口的高性能CMOS LVDS(Low Voltage Differential Signaling)驱动器的设计方法。用高性能CMOS LVDS驱动器作I／O接口单元是减小当前CMOS工艺芯片内外速度差异的重要手段。文章着重分析了高性能CMOS LVDS驱动器的电路结构及其工作原理，采用TSMC的0．25μm CMOS工艺模型，在Cadence环境下用Spectre仿真器进行模拟，给出了该驱动器的仿真结果。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.