锥头籽晶对DKDP晶体生长和损伤阈值的影响

籽晶是影响DKDP晶体生长和光损伤阈值的一个重要因素。采用传统降温法,分别利用Z片和锥头作为籽晶,从氘化程度为85%的溶液生长了DKDP晶体,并选取部分样品进行3倍频光损伤阈值测试。实验证明,DKDP晶体可以在不同籽晶下基本实现稳定生长,锥头籽晶所得DKDP晶体对晶体损伤阈值提高有积极作用且能有效缩短生长周期。     

不同过饱和度下DKDP晶体生长和缺陷的研究

过饱和度是影响DKDP晶体生长和质量的关键因素. 本文采用“点籽晶”快速生长技术在不同的过饱和度下从氘化程度为75%的溶液中生长DKDP晶体并选取部分样品进行同步辐射X射线形貌术和粉末X射线衍射测试. 研究了不同过饱和度下DKDP晶体的生长和缺陷. 实验证明, DKDP晶体可以在的过饱和度下实现快速生长, 但晶体的缺陷随着过饱和度的增大而增加.     

晶体生长的边界层效应—兼论光学实时观察法晶体生长技术

晶体生长边界层模型起源于流体动力学边界层模型，但两者又不完全相同，晶全生长边界层模型有两方面的含义：（１）在固－液界面处的、垂直于界面的，由杂质和组份构成的质量流决定晶体生长速度；（２）在界面附加溶度一侧的质量浓度流，其浓度分布是决定界面稳定性的基本参数。     

Cr3+掺杂对快速生长KDP晶体的生长习性和光学性能的影响

采用快速法生长了掺杂不同Cr3+浓度的KDP晶体,测试了KDP晶体(100)面在不同Cr3+掺杂浓度下的生长速度及死区,表征了Cr3+掺杂的KDP晶体的Cr3+元素分布、透过光谱、散射颗粒分布和光损伤阈值.实验表明Cr3+易吸附在晶体(100)面,从而增大了(100)生长死区,并降低了(100)面生长速度.Cr3+使快...     

Yb3+:KGW激光晶体生长与表征

通过对K2WO4和K2W2O7两种助溶剂的对比、分析,选择K2W2O7做助溶剂,采用顶部籽晶(TSSG)法生长YbKGW晶体.设计了合理的工艺条件转速10～15r/min;降温速率0.05℃/h;生长周期15d.通过对YbKGW晶体粉末样品的X-ray衍射谱与KGW粉末样品的X-ray衍射谱对比分析,生长晶体为β-YbKGW晶体.利用TG-DTA测定YbKGW晶体的熔点及相变温度分别是1086℃和1021℃.通过对晶体缺陷的观察分析认为,晶体裂缝及包裹物等缺陷与生长工艺条件密切相关,应尽量减少生长过程中的温度、浓度及生长速度的波动,保持晶体的稳态生长.     

光学干涉技术在晶体生长研究中的应用

利用光学干涉法对晶体生长过程中所引起的溶液折射率微小变化进行监测,分析所采集到的干涉图像,可得出与光程差相关的溶液浓度场及温度场的精确分布、晶体微观形貌变化及溶液对流等信息,对晶体生长机理研究有重要的意义.回顾了干涉技术测量晶体生长参数的基本原理,同时综述了近年来干涉技术在晶体生长研究中的应用及发现,并分析了该技术在晶体生长研究领域中的发展方向.     

光学浮区法生长技术及其在晶体生长中的应用

光学浮区法是近些年来倍受关注的晶体生长的新方法，具有无需坩埚、无污染、生长速度快等优点，十分适合于晶体生长研究。介绍了光学浮区法晶体生长炉的构造以及技术原理，并阐述了该生长法在晶体生长领域的应用情况。     

晶体生长理论研究现状与发展

本文回顾了晶体生长理论研究的发展历史,对现有理论的局限性作了评述,认为现有理论的局限性主要表现为：对于环境相结构效应和生长条件变化的忽视,用平衡热力学和统计物理学解释非平衡态的晶体生长过程;对于浓厚相和多元晶体生长缺乏理论模型,并对今后的发展方向提出看法。     

籽晶法生长高温合金单晶凝固界面研究

研究了籽晶法生长单晶高温合金中固液界面的演变规律。实验结果表明：在籽晶法生长高温合金单晶的起始过程中,凝固系统经非稳态自组织过程达到稳态生长,凝固界面经历了由平界面—胞状界面—枝晶界面的转化过程,胞枝晶间距根据凝固参数及初始形态自行调整,其调整模式主要有竞争淘汰、尖端开裂和高次分枝三种。在生长起始端存在着籽晶与单晶的融合区,融合区的成分取决于籽晶成分和单晶成分。     

籽晶法YBCO超导块材的制备及其磁化性能研究

以ＳｍＢａＣｕＯ超导晶粒为籽晶，制备了具有大晶粒的ＹＢａＣｕＯ超导块材。磁化强度和交流磁化率表明该材料具有较强的磁通钉扎和良好的晶界妆特性，较强的磁通钉扎使大块样品在磁化后能冻结大量磁通，表现出很好的剩磁性能，经０．５Ｔ永磁体化后，实验测得其表面剩磁场最大值为０．１２５Ｔ，且在短时间内这一剩磁场没有明显的衰减。     

硫酸盐掺杂对KDP晶体生长的影响

SO2-4是KDP原料中一种常见的杂质离子,通过传统降温法和“点籽晶”快速生长法研究了掺杂K2SO4的KDP晶体的生长.实验表明,硫酸根低浓度掺杂时可提高溶液的稳定性,促进晶体的生长,造成柱面扩展;高浓度时溶液稳定性遭到破坏,出现杂晶,晶体生长速度变慢,晶体出现开裂,柱面发生“楔化”.     

仿真技术在媒晶剂对石膏晶体转晶作用中的应用

为了研究媒晶剂在石膏晶体转晶过程中的作用,同时探讨计算机模拟在研究过程中的应用,本文利用吸附能模型计算了石膏晶体晶型以及主要晶面的附着能,同时模拟了柠檬酸、乙二胺四乙酸和苯基甘氨酸3种媒晶剂与石膏晶面(1 2-1)和(0 1 1)反应,得出了媒晶剂与石膏晶面的吸附能及媒晶剂的最佳组合方式.利用扫描电子显微镜对实验所得石膏晶型进行了分析,并测得不同媒晶剂作用下磷石膏抗折抗压强度.研究发现,实验结果与计算机模拟结果基本一致,磷石膏最大抗折抗压强度分别为3.64和7.35 MPa.     

温度梯度和生长速率对CdZnTe-VBM生长晶体的影响

计算模拟了半导体材料CdZnTe垂直布里奇曼法(CdZnTe-VBM)单晶体生长过程，分析了炉膛温度梯度和坩埚移动速率对结晶界面形态和晶体内组份偏析的影响。计算结果表明炉膛温度梯度和生长速率的变化明显影响固-液界面前沿对流场的形态和强度。界面凹陷深度随着炉膛温度梯度的增加和生长速率减小而减小。炉膛温度梯度的增加和生长速率的减小虽然均能有效的减小径向偏析，但却增加轴向偏析，减小轴向等浓度区的长度。     

不同籽晶对KDP晶体质量的影响

采用Z片籽晶和锥头籽晶分别进行传统降温法生长KDP晶体,并对其高分辨摇摆曲线、锥光干涉图以及消光比进行测试研究。实验发现,KDP晶体在不同籽晶下均能实现较好的生长稳定性,采用锥头籽晶生长的KDP晶体具有相对更好的晶体质量。     

Growth habit and transparency of sulphate doped KDP crystal

KDP crystals were grown from the aqueous solution with different concentrations of sulphate by both the traditional temperature-lowering method and the rapid growth method. Sulphate showed a great effect on the growth and the properties of KDP crystals. With the rise of the dopant concentration, many defects occur such as mother liquid inclusions, parasite crystals and cracks. When the dopant concentration of sulphate reaches a certain value, the ultraviolet transmittance of crystals decreases a lot compared with crystals at low dopant concentration.     

Growth and optical property of zinc oxide thornballs

A new microstructure, thornball, of zinc oxide (ZnO) was synthesized by a very simple solid vapor deposition process under lead oxide (PbO) atmosphere. The microthornballs consist of numerous needles, which extend outwards in all directions symmetrically. They have dimensions of 120 μm in diameter, while the average diameter of the needles is about 100-200 nm. The needles on the balls grow along the 〈0 0 0 1〉 orientation and have gradient compositions along radial. Control experiments proved that PbO played an important role in the growth. Additionally, photoluminescence property was observed and provided the evidence that PbO did not deteriorate the optical properties of ZnO thornballs. This kind of microstructures has potential applications in the field of photochemical catalysis.     

Low temperature synthesis and optical property of ZnS nanotubes

Zinc sulphide (ZnS) nanotubes were synthesised via simple surfactant emulsion template under hydrothermal conditions. X-ray diffraction, scanning electron microscopy and transmission electron microscope were used to characterise the nanotubes. The results indicate that the nanotubes are composed of nanoparticles. The diameters of the nanotubes vary from 300 to 700?nm and lengths range from 1 to 2?µm. In addition, it is found that the reaction time, reaction temperature and cetyltrimethylammonium bromide play key roles in the phase and morphology control of ZnS nanotubes. Furthermore, room temperature photoluminescence was recorded to investigate the optical property of the obtained product. The stable and strong green emission band centred at 513?nm was attributed to some self-activated centres, probably vacancy states or interstitial states related to the peculiar structure.     

Influence of air annealing temperature and time on the optical properties of Yb:YAG single crystal grown by HDS method

8 at.% Yb:YAG plate single crystal with the dimension of 170 mm × 150 mm × 30 mm was grown in vacuum by Horizontal Directional Solidification method. Aimed at blue-green color centers, annealing treatments of 15 mm × 15 mm × 1 mm samples from 900 °C to 1400 °C for 5 h and at 900 °C from 5 h to 40 h in air were conducted. The absorption spectra, emission spectra, fluorescence lifetime and X-ray photoelectron spectroscopy of samples under different annealing conditions were measured at room temperature, respectively. Annealing at above 1000 °C for 5 h or at 900 °C for 40 h made the blue-green color centers disappear and the samples turned to transparent. Absorption coefficients decreased in the 300 nm–800 nm wavelength range, emission intensities increased and emission bands broadened around 486 nm and 1029 nm with increasing temperature up to 1200 °C, then varied inversely. These values decreased or increased monotonically with increasing annealing time at 900 °C. The maximal increases of fluorescence lifetime were 62.3% and 64.7%, respectively. The calculated emission cross section of 1200 °C for 5 h was up to 4.4 × 10⁻²⁰ cm². In X-ray photoelectron spectroscopy, the concentrations of oxygen vacancies reduced from 1.28% down to absence by annealing. These experiments show that color centers are detrimental to the optical properties of HDS-Yb:YAG laser crystal and optimal annealing treatments should be conducted.