Microstructure and thermal conductivity of gas-pressure-sintered Si3N4 ceramic: the effects of Y2O3 additive content

Si₃N₄ ceramics were sintered at 1900 °C under a nitrogen pressure of 1 MPa using Y₂O₃-MgO additives. The effects of Y₂O₃ content (0.5-4 mol%) on microstructure and thermal conductivity were systematically investigated. The increasing Y₂O₃ content led to increases in amount and viscosity of liquid phase during sintering, which induced a “bimodal to normal” transition in distribution of grain size, decreased Si₃N₄/Si₃N₄ contiguity and enhanced devitrification degree of intergranular phase in sintered bulks. Moreover, the decreasing Y₂O₃ content was found to improve the elimination efficiency of SiO₂ impurity during sintering, resulting in lower lattice oxygen content in densified specimens. The microstructure had a strong effect on thermal conductivity. The samples sintered for 3 h gained an increase of thermal conductivity from 65 to 73 W·m^-1 K^-1 with increasing Y₂O₃ content, while the samples sintered for 12 h obtained a substantial increase of thermal conductivity from 87 to 132 W·m^-1 K^-1 with decreasing Y₂O₃ content.     

Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

Fabrication of Si3N4 ceramics with high thermal conductivity and flexural strength via novel two-step gas-pressure sintering

Si₃N₄ ceramic substrates serving as heat dissipater and supporting component are required to have excellent thermal and mechanical properties. To prepare Si₃N₄ with desirable properties, a novel two-step gas-pressure sintering route including a pre-sintering step followed by a high-temperature sintering step was devised. The effects of pre-sintering temperature (1500 – 1600 °C) on the phase transformation, microstructure, thermal and mechanical properties of the samples were studied. The pre-sintering temperature played an important role in adjusting the Si₃N₄ particles’ rearrangement and α→β transformation rate. Furthermore, the densification process for the Si₃N₄ ceramics prepared via the two-step gas-pressure sintering was revealed. After sintered at 1525 °C for 3 h followed by a high-temperature sintering at 1850 °C for another 3 h, the prepared Si₃N₄ compact with a bimodal microstructure presented the highest thermal conductivity and flexural strength of 79.42 W·m^?1·K^?1 and 801 MPa, respectively, which holds great application prospects as ceramic substrates.     

Fabrication of high thermal conductivity silicon nitride ceramics by pressureless sintering with MgO and Y2O3 as sintering additives

The fabrication of silicon nitride (Si₃N₄) ceramics with a high thermal conductivity was investigated by pressureless sintering at 1800 °C for 4 h in a nitrogen atmosphere with MgO and Y₂O₃ as sintering additives. The phase compositions, relative densities, microstructures, and thermal conductivities of the obtained Si₃N₄ ceramics were investigated systemically. It was found that at the optimal MgO/Y₂O₃ ratio of 3/6, the relative density and thermal conductivity of the obtained Si₃N₄ ceramic doped with 9 wt% sintering aids reached 98.2% and 71.51 W/(m·K), respectively. EDS element mapping showed the distributions of yttrium, magnesium and oxygen elements. The Si₃N₄ ceramics containing rod-like grains and grain boundaries were fabricated by focused ion beam technique. TEM observations revealed that magnesium existed as an amorphous phase and that yttrium produced a new secondary phase.     

Enhanced thermal conductivity in Si3N4 ceramic by addition of a small amount of carbon

In order to fabricate Si₃N₄ ceramic with enhanced thermal conductivity, 93 mol%α-Si₃N₄-2 mol%Yb₂O₃-5 mol%MgO powder mixture was doped with 5 mol% carbon, and sintered firstly at 1500 °C for 8 h and subsequently at 1900 °C for 12 h under 1 MPa nitrogen pressure. During the first-step sintering, the carbothermal reduction process significantly reduced the oxygen content and increased the N/O ratio of intergranular secondary phase, resulting in the precipitation of Yb₂Si₄O₇N₂ crystalline phase, higher β-Si₃N₄ content and larger rod-like β-Si₃N₄ grains in the semi-finished Si₃N₄ sample. After the second-step sintering, the final dense Si₃N₄ product acquired coarser elongated grains, lower lattice oxygen content, tighter Si₃N₄-Si₃N₄ interfaces and more devitrified intergranular phase due to the further carbothermal reduction of oxynitride secondary phase. Consequently, the addition of carbon enabled Si₃N₄ ceramic to gain a significant increase of ∼25.5% in thermal conductivity from 102 to 128 W∙m⁻¹ K⁻¹.     

Mechanical properties and thermal conductivity of Si3N4 ceramics with YF3 and MgO as sintering additives

Si₃N₄ ceramic was densified by hot pressing sintering at 1750 °C for 1 h under the uniaxial pressure of 20 MPa in N₂ atmosphere with YF₃ and MgO as sintering additives. The thermal conductivities of SN-YF specimen were both higher than that of Si₃N₄ ceramic sintered with Y₂O₃ and MgO before and after annealing treatment. The grain size and aspect ratio in SN-YF specimen were both bigger than those in the SN-YO specimen, which was beneficial for the creation of high thermal conductive path. On the other hand, the improvement of thermal conductivity by the addition of YF₃ might be attributed to the reduction of the grain boundary phase due to the evaporation of SiF₄, and the resultant reduction of the lattice oxygen due to the reduction of SiO₂ in the grain boundary phase. The {0001} direction of grains had the probability of growing along the hot pressing direction in the SN-YF specimen, which was beneficial for the improvement of thermal conductivity while the {0001} direction grew along the X₀-Y₀ plane in the SN-YO specimen. The mechanical properties of SN-YF specimen were comparable to those of SN-YO specimen.     

Cost effective preparation of Si3N4 ceramics with improved thermal conductivity and mechanical properties

High-purity silicon powder is used as the starting material for cost-effective preparation of silicon nitride ceramics with both high thermal conductivity and excellent mechanical properties using RE₂O₃ (RE=Y, La or Er) and MgO as sintering additives. Nitridation is a key procedure that would affect the properties of green bodies and the sintered samples. The β: (α+β) ratio can be increased as the samples nitrided at 1450ºC and a large amount of long rod-like β-Si₃N₄ grains were developed in the samples. It was found that the addition of Er₂O₃-MgO could help to improve the mechanical properties of the sintered Si₃N₄ ceramics, the thermal conductivity, flexural strength and fracture toughness of the sample were 90 W/(m∙K), 953±28.3 MPa and 10.64±0.61 MPa·m^1/2, respectively. The RE³⁺ species with larger ionic radius tended to increase the oxygen of nitrided samples and decrease N/O ratio (triangle grain boundary) of sintered samples.     

Investigation on thermal conductivity and mechanical properties of Si3N4 ceramics via one-step sintering

High thermal conductivity Si₃N₄ ceramics were fabricated using a one-step method consisting of reaction-bonded Si₃N₄ (RBSN) and post-sintering. The influence of Si content on nitridation rate, β/(α+β) phase rate, thermal conductivity and mechanical properties was investigated in this work. It is of special interest to note that the thermal conductivity showed a tendency to increase first and then decrease with increasing Si content. This experimental result shows that the optimal thermal conductivity and fracture toughness were obtained to be 66 W (m K)^-1 and 12.0 MPa m^1/2, respectively. As a comparison, the nitridation rate and β/(α+β) phase rate in a static pressure nitriding system, i.e., 97% (MS10), 97% (MS15), 97% (MS20) and 8.3% (MS10), 8.3% (MS15), 8.9% (MS20), respectively, have obvious advantages over those in a flowing nitriding system, i.e., 91% (MS10), 91% (MS15), 93% (MS20) and 3.1% (MS10), 3.3% (MS15), 3.3% (MS20), respectively. Moreover, high lattice integrity of the β-Si₃N₄ phase was observed, which can effectively confine O atoms into the β-Si₃N₄ lattice using MgO as a sintering additive. This result indicates that one-step sintering can provide a new route to prepare Si₃N₄ ceramics with a good combination of thermal conductivity and mechanical properties.     

Sintered reaction-bonded silicon nitrides with high thermal conductivity: The effect of the starting Si powder and Si3N4 diluents

Silicon nitride ceramics with high thermal conductivity were fabricated by employing the reaction bonding method. It was revealed that the addition of Si₃N₄ diluents affected both the nitriding reaction and the post-sintering behavior by changing the size of the silicon particle during the milling process. The reduced size of silicon particle led to an increased degree of nitridation. Further, narrower pore channels in the nitrided bodies caused by the reduced size of silicon particle enhanced the final density, by promoting the easier elimination of finer pores during post-sintering. The positive effect of the finer silicon particle was confirmed by a back-up experiment employing a variety of silicon particle sizes, produced by milling the raw silicon powder for different milling times. Thermal conductivity was dominated by material density rather than variation of the microstructure or oxygen content in the current research.     

Fabrication of Si3N4 ceramics substrates with high thermal conductivity by tape casting and gas pressure sintering

In this paper, high thermal conductivity Si₃N₄ ceramics were successfully fabricated through exploring and optimizing the tape casting process. The impact of various organic additives on the rheological characteristics of Si₃N₄ slurry was explored, and the pore size distribution and microstructure of the green tapes at different solid loadings were investigated, as well as the microstructure of Si₃N₄ ceramics. Green tapes with a narrow pore size distribution, a small average pore size, and a high density of 1.88 g cm⁻³ were prepared by the investigation and optimization of the Si₃N₄ slurry formulation. After gas pressure sintering, Si₃N₄ ceramics with a density of 3.23 g cm⁻³, dimensions of 78 mm × 78 mm, and a thickness of 0.55 mm were obtained. The microstructure of the Si₃N₄ ceramics showed a bimodal distribution and a low content of glassy phases. The thermal conductivity of the Si₃N₄ ceramics was 100.5 W m⁻¹ K⁻¹, the flexural strength was 735 ± 24 MPa, and the fracture toughness was 7.17 MPa m^1/2.     

Microstructure and mechanical properties of tantalum carbide ceramics: Effects of Si3N4 as sintering aid

Stoichiometric Tantalum carbide (TaC) ceramics were prepared by reaction spark plasma sintering using 0.333–2.50 mol% Si₃N₄ as sintering aid. Effects of the Si₃N₄ addition on densification, microstructure and mechanical properties of the TaC ceramics were investigated. Si₃N₄ reacted with TaC and tantalum oxides such as Ta₂O₅ to form a small concentration of tantalum silicides, SiC and SiO₂, with significant decrease in oxygen content in the consolidated TaC ceramics. Dense TaC ceramics having relative densities >97% could be obtained at 0.667% Si₃N₄ addition and above. Average grain size in the consolidated TaC ceramics decreased from 11 µm at 0.333 mol% Si₃N₄ to 4 µm at 2.50 mol% Si₃N₄ addition. The Young's modulus, Vickers hardness and flexural strength at room temperature of the TaC ceramic with 2.50 mol% Si₃N₄ addition was 508 GPa, 15.5 GPa and 605 MPa, respectively. A slight decrease in bending strength was observed at 1200 °C due to oxidation of the samples.     

Thermal and mechanical properties of Si3N4 ceramics obtained via two-step sintering

Si₃N₄ ceramics were prepared using novel two-step sintering method by mixing α-Si₃N₄ as raw material with nanoscale Y₂O₃–MgO via Y(NO₃)₃ and Mg(NO₃)₂ solutions. Si₃N₄ composite powders with in situ uniformly distributed Y₂O₃–MgO were obtained through solid–liquid (SL) mixing route. Two-step sintering method consisted of pre-deoxidization at low temperature via volatilization of in situ-formed MgSiO₃ and densification at high temperature. Variations in O, Y, and Mg contents in Si₃N₄–Y₂O₃–MgO during first sintering step are discussed. O and Mg contents decreased with increasing temperature because SiO₂ on Si₃N₄ surface reacted with MgO to form low-melting-point MgSiO₃ compound, which is prone to volatilize at high temperature. By contrast, Y content hardly changed due to high-temperature stability of Y–Si–O–N quaternary compound. In the second sintering step, skeleton body was densified, and the formation of Y₂Si₃O₃N₄ secondary phase occurred simultaneously. Two-step sintered Si₃N₄ ceramics had lower total oxygen content (1.85 wt%) than one-step sintered Si₃N₄ ceramics (2.51 wt%). Therefore, flexural strength (812 MPa), thermal conductivity (92.1 W/m·K), and fracture toughness (7.6 MPa?m^1/2) of Si₃N₄ ceramics prepared via two-step sintering increased by 28.7%, 16.9%, and 31.6%, respectively, compared with those of one-step sintered Si₃N₄ ceramics.     

Thermal conductivity and mechanical properties of Si3N4 ceramics with binary fluoride sintering additives

Silicon nitride (Si₃N₄) ceramics were fabricated by gas pressure sintering (GPS) using four sintering additives: Y₂O₃–MgO, Y₂O₃–MgF₂, YF₃–MgO, and YF₃–MgF₂. The phase composition, grain growth kinetics, mechanical properties, and thermal conductivities of the Si₃N₄ ceramics were compared. The results indicated that the reduction of YF₃ on SiO₂, induced a high Y₂O₃/SiO₂ secondary phase ratio, which improved the thermal conductivity of the Si₃N₄ ceramics. The depolymerization of F atom reduces the diffusion energy barrier of solute atom and weakens the viscous resistance of anion group, which was beneficial to grain boundary migration. Besides exhibiting a lower grain growth exponent(n = 2.5)and growth activation energy (Q = 587.94 ± 15.35 kJ/mol), samples doped with binary fluorides showed excellent properties, including appreciable thermal conductivity (69 W m⁻¹ K⁻¹), hardness (14.63 ± 0.12 GPa), and fracture toughness (8.75 ± 0.18 MPa m^1/2), as well as desirable bending strength (751 ± 14 MPa).     

Enhanced thermal conductivity in Si3N4 ceramics by carbonizing polydopamine coatings

To enhance the thermal conductivity of Si₃N₄, a polydopamine (PDA) coating was creatively introduced into ceramics sintered with different additive contents through a two-step sintering process consisting of a first treatment at 1500 °C for 8 h followed by 12 h at 1900 °C under 1 MPa nitrogen pressure. After the first-step sintering, the PDA-coated sample exhibited a higher elimination effect of the liquid phase and an increase in the N/O ratio, which allowed the additives to directly interact with the Si₃N₄ grains, resulting in a microstructure with more and larger rod-shaped grains. After the second-step sintering, the densified samples of the PDA-coating attained slightly coarser rod-shaped grains, lower O content, higher N/O ratio and peak intensity (XRD) of the Y₂Si₃O₃N₄ phase, thicker grain boundary film, and secondary phases mainly residing in multigrain junctions. Consequently, the thermal conductivity of all the PDA-coated samples typically showed a 10–12% increment in comparison to the PDA-free samples for each additive content.     

Nitrogen-doped-CNTs/Si3N4 nanocomposites with high electrical conductivity

Novel highly electrically conducting nanocomposites consisting of a silicon nitride (Si₃N₄) ceramic matrix containing up to 13.6 vol.% of nitrogen-doped multi-walled carbon nanotubes (CNx) were fabricated. As-synthesized CNx were treated with hydrogen peroxide in order to efficiently detach/isolate the nanotubes from bundles, then they were mixed with the ceramic powders and fully densified using the spark plasma sintering (SPS) technique. Composites containing 13.6 vol.% CNx reached an electrical conductivity of 2174 S m⁻¹ that is the highest value reported hitherto for carbon nanotubes/Si₃N₄ nanocomposites. The nitrogen doping also favored a strong mechanical interlocking between the nanotubes and the Si₃N₄ matrix; when compared to the undoped carbon nanotubes. These novel nanocomposites could be used in devices associated to power generation or telecommunications.     

Enhanced thermal conductivity in Si3N4 ceramic with the addition of Y2Si4N6C

Si₃N₄ ceramic was densified at 1900°C for 12 hours under 1 MPa nitrogen pressure, using MgO and self‐synthesized Y₂Si₄N₆C as sintering aids. The microstructures and thermal conductivity of as‐sintered bulk were systematically investigated, in comparison to the counterpart doped with Y₂O₃‐MgO additives. Y₂Si₄N₆C addition induced a higher nitrogen/oxygen atomic ratio in the secondary phase by introducing nitrogen and promoting the elimination of SiO₂, resulting in enlarged grains, reduced lattice oxygen content, increased Si₃N₄‐Si₃N₄ contiguity and more crystallized intergranular phase in the densified Si₃N₄ specimen. Consequently, the substitution of Y₂O₃ by Y₂Si₄N₆C led to a great increase in ~30.4% in thermal conductivity from 92 to 120 W m^?1 K^?1 for Si₃N₄ ceramic.     

High thermal conductivity silicon nitride ceramics prepared by pressureless sintering with ternary sintering additives

Silicon nitride ceramics were pressureless sintered at low temperature using ternary sintering additives (TiO₂, MgO and Y₂O₃), and the effects of sintering aids on thermal conductivity and mechanical properties were studied. TiO₂–Y₂O₃–MgO sintering additives will react with the surface silica present on the silicon nitride particles to form a low melting temperature liquid phase which allows liquid phase sintering to occur and densification of the Si₃N₄. The highest flexural strength was 791(±20) MPa with 12 wt% additives sintered at 1780°C for 2 hours, comparable to the samples prepared by gas pressure sintering. Fracture toughness of all the specimens was higher than 7.2 MPa·m^1/2 as the sintering temperature was increased to 1810°C. Thermal conductivity was improved by prolonging the dwelling time and adopting the annealing process. The highest thermal conductivity of 74 W/(m∙K) was achieved with 9 wt% sintering additives sintered at 1810°C with 4 hours holding followed by postannealing.     

Electrical and thermal properties of SiC-Zr2CN composites sintered with Y2O3-Sc2O3 additives

SiC-Zr₂CN composites were fabricated from β-SiC and ZrN powders with 2 vol% equimolar Y₂O₃-Sc₂O₃ additives via conventional hot pressing at 2000 °C for 3 h in a nitrogen atmosphere. The electrical and thermal properties of the SiC-Zr₂CN composites were investigated as a function of initial ZrN content. Relative densities above 98% were obtained for all samples. The electrical conductivity of Zr₂CN composites increased continuously from 3.8 × 10³ (Ωm)⁻¹ to 2.3 × 10⁵ (Ωm)⁻¹ with increasing ZrN content from 0 to 35 vol%. In contrast, the thermal conductivity of the composites decreased from 200 W/mK to 81 W/mK with increasing ZrN content from 0 to 35 vol%. Typical electrical and thermal conductivity values of the SiC-Zr₂CN composites fabricated from a SiC-10 vol% ZrN mixture were 2.6 × 10⁴ (Ωm)⁻¹ and 168 W/m K, respectively.     

A comparative study of thermal conductivity and thermal emissivity of high temperature solar absorber of ZrO2 /Fe2O3 and Al2O3/CuO ceramics

Oxide ceramics are considered as promising high temperature solar absorber materials. The major aim of this work is the development of a new solar absorber material with promising characteristics, high efficiency and low-cost processing. Hence, this work provides a comparative and inclusive study of densification behavior, microstructure features, thermal emissivity and thermal conductivity values of the two new high temperature solar absorbers of ZrO₂/Fe₂O₃ and Al₂O₃/CuO ceramics. Ceramic composites of ZrO₂/(10–30 wt%) Fe₂O₃ and Al₂O₃/(10–30 wt%) CuO were prepared by pressureless sintering method at a temperature of 1700 °C/2hrs. Identification of the solar to thermal efficiency of the composites was evaluated in terms of their measured thermal emissivity. Thermal efficiency and heat transfer homogeneity were investigated in terms of thermal conductivity and diffusivity measurement. The results showed that both composites exhibited comparable densification behavior, homogenous and harmonious microstructure. However, Al₂O₃/10 wt% CuO composite showed higher thermal and solar to thermal efficiencies than ZrO₂/Fe₂O₃ composites. It gave the lowest and the best thermal emissivity of 0.561 and the highest thermal conductivity of 15.4 W/m. K. These values proved to be the best amongst all those of the most known solar absorber materials made from the expensive SiC and AlN ceramics. Thus, Al₂O₃/CuO composites have succeeded in obtaining outstanding properties at a much lower price than its other competitive materials. These results may strongly identify Al₂O₃/CuO composites as promising high-temperature solar absorber materials instead of ZrO₂ and the other carbide and nitride ceramics.     

Effect of a new nonoxide additive,Y3Si2C2, on the thermal conductivity and mechanical properties of Si3N4 ceramics

Enhancement of the thermal conductivity of silicon nitride is usually achieved by sacrificing its mechanical properties (bending strength). In this study, β-Si₃N₄ ceramics were prepared using self-synthesized Y₃Si₂C₂ and MgO as sintering additives. It was found that the thermal conductivity of the Si₃N₄ ceramics was remarkably improved without sacrificing their mechanical properties. The microstructure and properties of the Si₃N₄ ceramics were analyzed and compared with those of the Y₂O₃-MgO additives. The addition of Y₃Si₂C₂ eliminated the inherent SiO₂ and introduced nitrogen to increase the N/O ratio of the grain-boundary phase, inducing Si₃N₄ grain growth, increasing Si₃N₄ grain contiguity, and reducing lattice oxygen content in Si₃N₄. Therefore, by replacing Y₂O₃ with Y₃Si₂C₂, the thermal conductivity of the Si₃N₄ ceramics was significantly increased by 31.5% from 85 to 111.8Wm⁻¹K⁻¹, but the bending strength only slightly decreased from 704 ± 63MPa to 669 ± 33MPa.