Hydroxylated α-Al2O3 (0 0 0 1) surfaces and metal/α-Al2O3 (0 0 0 1) interfaces

X-ray photoelectron spectroscopy was applied to study the hydroxylation of α-Al₂O₃ (0 0 0 1) surfaces and the stability of surface OH groups. The evolution of interfacial chemistry of the α-Al₂O₃ (0 0 0 1) surfaces and metal/α-Al₂O₃ (0 0 0 1) interfaces are well illustrated via modifications of the surface O1s spectra. Clean hydroxylated surfaces are obtained through water- and oxygen plasma treatment at room temperature. The surface OH groups of the hydroxylated surface are very sensitive to electron beam illumination, Ar⁺ sputtering, UHV heating, and adsorption of reactive metals. The transformation of a hydroxylated surface to an Al-terminated surface occurs by high temperature annealing or Al deposition.     

Scanning tunnelling microscopy and spectroscopy of the reduced TiO2(1 0 0) surface

Scanning tunnelling microscopy and current imaging tunnelling spectroscopy were used to study the topographic and electronic structure of a reduced TiO₂(1 0 0) surface. The STM results showed that the TiO₂(1 0 0) surface is capable to form (1 × 7) reconstruction which can transform to (1 × 3) reconstruction due to reoxidation of the surface. The CITS results showed that the (1 × 7) reconstruction is much more metallic in compared to the (1 × 3) reconstruction showing pronounced surface states at energy 1.3 eV and 0.8 eV below the Fermi level and at energy 1.0-1.2 eV above the Fermi level.     

Molecular dynamics simulation of the (0 0 0 1) α-Al2O3 and α-Cr2O3 surfaces

A simple, rigid pair-potential model is applied to investigate the dynamics of the (0 0 0 1) α-Al₂O₃ and α-Cr₂O₃ surfaces using the molecular dynamics technique. The simulations employ a two-stage equilibration process: in the first stage the simulation-cell size is determined via the constant-stress ensemble, and in the second stage the equilibration of the size-corrected simulation cell is continued in the canonical ensemble. The thermal expansion coefficients of bulk alumina and chromia are evaluated as a function of temperature. Furthermore, the surface relaxation and mean-square displacement of the atoms versus depth into the slab are calculated, and their behaviour in the surface region analysed in detail. The calculations show that even moderate temperatures (∼400 °C) give rise to displacements of the atoms at the surface which are similar to the lattice mismatch between α-alumina and chromia. This will help in the initial nucleation stage during thin film growth, and thus facilitate the deposition of α-Al₂O₃ on (0 0 0 1) α-Cr₂O₃ templates.     

Room and high-temperature scanning tunnelling microscopy and spectroscopy (HT-STM/STS) investigations of surface nanomodifications created on the TiO2(1 1 0) surface

High-temperature scanning tunnelling microscopy, scanning tunnelling spectroscopy and current imaging tunnelling spectroscopy (HT-STM/STS/CITS) were used to study the topographic and electronic structures changes due to surface modifications of the TiO₂(1 1 0) surface caused by the STM tip. In situ high-temperature STM results showed that the created modifications were stable even at elevated temperatures. The STS/CITS results showed the presence of energy gap below the Fermi level on the untreated regions. The disappearance of energy gap below the Fermi level on the modifications created by the tip was observed. It is assumed that the presence of the tip can change the chemical stoichiometry of the surface from TiO_2−x towards Ti₂O₃.     

Atomic geometry and electronic properties of the Ge(1 1 1)2 × 1-Sb surface studied by scanning tunneling microscopy/spectroscopy and core-level photoemission

By scanning tunneling microscopy and spectroscopy (STM/S) and high-resolution core-level photoemission using synchrotron radiation, we have investigated the atomic structure and electronic properties of Sb-induced 2 × 1 reconstruction on Ge(1 1 1). Our results support well the zigzag-chain model proposed for this phase in the literature; in particular, the STM images visualize the Sb zigzag (Seiwatz) chain in a real space, and the STS I-V spectrum suggests this surface to be semiconducting, in good agreement with the atomic configuration proposed. However, a closer inspection of the STM results does not support the buckling of Sb chains reported in earlier studies. Moreover, the analysis of the Sb 4d core-level line shape of the (2 × 1) reconstruction shows that the bonding state of the Sb atoms is very similar, suggesting an unbuckled Seiwatz chain. In addition, the Ge 3d core-level emission reveals only one component, giving evidence for the ideal bulk-terminated structure of the Ge substrate.     

Driving force for the WO3(0 0 1) surface relaxation

The optimized structure of the WO₃(0 0 1) surface with various types of termination ((1 × 1)O, (1 × 1)WO₂, and c(2 × 2)O) has been simulated using density functional theory with the Perdew-Wang 91 gradient corrected exchange-correlation functional. While the energy of bulk WO₃ depends weakly on the distortions and tilting of the WO₆ octahedra, relaxation of the (0 0 1) surface results in a significant decrease of surface energy (from 10.2 × 10⁻² eV/Ų for the cubic ReO₃-like, c(2 × 2)O-terminated surface to 2.2 × 10⁻² eV/Ų for the relaxed surface). This feature illustrates a potential role of surface relaxation in formation of crystalline nano-size clusters of WO₃. The surface relaxation is accompanied by a dramatic redistribution of the density of states near the Fermi level, in particular a transformation of surface electronic states. This redistribution is responsible for the decrease of electronic energy and therefore is suggested to be the driving force for surface relaxation of the WO₃(0 0 1) surface and, presumably, similar surfaces of other transition metal oxides.     

One-dimensional structural and electronic properties of magnetite Fe3O4(1 1 0)

We study the structure and the electronic properties of the (1 1 0) surfaces of magnetite Fe₃O₄ thin films by scanning tunneling microscopy (STM) and spectroscopy (STS). The STM images show a surface reconstruction consisting of ridges along the direction. Based on atomically resolved STM images we present a model for the observed ridge reconstruction of the surface, in agreement with a bulk-truncated layer containing both octahedral and tetrahedral iron ions. The metallic and semiconductor-like shapes of the measured current-voltage (I-V) curves indicate a non-uniform segregation of magnesium through the film. The weak contrast between the tops and valleys of ridges measured in the STS current maps is attributed to tetrahedral and octahedral coordination at the tops and the valleys, respectively. This attribution is in agreement with the proposed structure model. We observe a contrast enhancement at a tip change accompanied by a corrugation enhancement. This tip change is induced by picking up material from the sample, resulting in a magnetic tip. Thus, the contrast enhancement is attributed to detection of spin polarized current.     

Surface termination, composition and reconstruction of Fe3O4(001) and γ-Fe2O3(001)

We address a current controversy concerning the nature of the surfaces of Fe₃O₄(001) and γ-Fe₂O₃(001) grown on MgO(001) by molecular beam epitaxy. Despite recent claims to the contrary, we show that γ-Fe₂O₃(001) unambiguously exhibits a (1×1) surface net, in contrast to Fe₃O₄(001), which assumes a R45 reconstruction. In addition, we present high-energy-resolution Fe 2p and O 1s core-level photoelectron spectra obtained at both normal and grazing emission for γ-Fe₂O₃(001) and Fe₃O₄(001). These spectra show that the Fe₃O₄(001) surface has a higher Fe(III)/Fe(II) ratio than the bulk, and that the asymmetry in the O 1s line shape for Fe₃O₄(001) is due to final state effects rather than the presence of a surface oxygen or hydroxyl species.     

Controlling metal/oxide interactions in bifunctional nanostructured model catalysts: Pd and BaO on Al2O3/NiAl(1 1 0)

We have investigated the structure and growth of Pd and BaO containing nanoparticles sequentially co-deposited on an ordered Al₂O₃/NiAl(1 1 0) by scanning tunneling microscopy (STM), and their interaction with CO and NO₂ by infrared reflection absorption spectroscopy (IRAS).Ba deposition and subsequent oxidation result in Ba_xAl_2yO_x+3y nanoparticles being formed which are characterized by high particle densities and nucleation both on regular terraces and at oxide defects. In contrast, Pd interaction with the model support is weaker and preferential nucleation occurs mainly at rotational domain boundaries and to a lesser extent at anti-phase domain boundaries. For subsequent co-deposition of Pd on preformed Ba_xAl_2yO_x+3y/Al₂O₃/NiAl(1 1 0), Pd nucleates at the Ba_xAl_2yO_x+3y nanoparticles and covers them. The reverse deposition sequence, i.e. subsequent Ba co-deposition and oxidation on preformed Pd/Al₂O₃/NiAl(1 1 0), leads to formation of small isolated Ba_xAl_2yO_x+3y nanoparticles without contact to Pd, together with large Pd crystallites modified by Ba_xAl_2yO_x+3y. The present results provide control over the degree of interaction between metal nanoparticles and oxide nanoparticles on a well-defined model catalyst and thus allow us to study effects related effects on the reactivity and catalytic behavior.     

Structural properties of Bi-terminated GaAs(0 0 1) surface

Electronic and structural properties of Bi-terminated reconstructions on GaAs(0 0 1) surface have been studied by scanning tunneling microscopy (STM) and synchrotron radiation core-level spectroscopy. A 2-3 monolayer thick Bi-layer was evaporated on a Ga-terminated GaAs(0 0 1) surface. By heating the surface, the reconstruction changed from (2 × 1) to (2 × 4). The α2 phase with one top Bi dimer and one As or Bi dimer in the third atomic layer per surface unit cell is proposed to explain the STM images of the Bi/GaAs(0 0 1)(2 × 4) surface heated at 400 °C. Bi 5d photoemission from the Bi/GaAs(2 × 4) consisted of two components suggesting two different bonding sites for Bi atoms on the (2 × 4) surface. The variation of the surface sensitivity of the photoemission induced no changes in the intensities of the components indicating that the origins of both components lie in the first surface layer.     

Decay of multilayer holes on SrTiO3(0 0 1)

We have studied the decay kinetics of nanoscale multilayer holes on SrTiO₃(0 0 1) surfaces, using variable temperature scanning tunneling microscopy. We have performed real time observation of the decay of multilayer holes with diameters of 10 nm order at 750 °C. We have found that the hole decays, filling layer by layer from the bottom while expanding the periphery of the hole. We have performed numerical simulations of hole decay based on a step flow model. The observed decay kinetics is found to be diffusion limited with local mass conservation.     

Structure and electronic properties calculation of ultrathin α-Al2O3 films on (0 0 0 1) α-Cr2O3 templates

Ab initio total energy Hartree-Fock calculations of ultrathin films of α-Al₂O₃ on (0 0 0 1) α-Cr₂O₃ templates are presented. The surface relaxation, the in-plane reconstruction and the surface and strain energies of the slabs are studied as a function of alumina film thickness. The surface Al layer is found to relax inwards considerably, with the magnitude of the inwards relaxation depending on the thickness of the ultrathin alumina film in a non-linear manner. The calculations also reveal that ultrathin films of alumina lower the surface energy of (0 0 0 1) α-chromia substrates. This indicates that the (0 0 0 1) α-chromia surface provides favourable conditions for the templated growth of α-alumina. However, increasing the alumina film thickness is found to give rise to a significant increase in strain energy. Finally, the electronic properties at the surface of the (0 0 0 1) α-Al₂O₃/α-Cr₂O₃ slabs are investigated. Here it is found that the alumina coating gives rise to an increase in the covalency of the bonds at the surface of the slabs. In contrast, the influence of an alumina layer on the electrostatic potential at the surface of the chromia slab is relatively minor, which should also be beneficial for the templated growth of α-alumina on (0 0 0 1) α-chromia substrates.     

Co on thin Al2O3 films grown on Ni3Al(1 0 0)

The growth of Co on thin Al₂O₃ layers on Ni₃Al(1 0 0) was investigated by Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), and scanning tunneling microscopy. At 300 K, Co grows in three-dimensional clusters on top of the Al₂O₃ layer. A defect structure of the alumina layer plays a crucial role during the early stage of Co growth. After deposition of 10 Å of Co, a complete screening of the dipoles of the Al₂O₃ layer due to the Co film is found in the EELS measurements. Annealing the Co film reveals a process of coalescence of Co clusters and, above 700 K, diffusion of the Co atoms through the oxide film into the substrate takes place.     

The interaction of ultrathin Cr layers with SrTiO3(1 0 0)

The growth of ultrathin Cr overlayers on SrTiO₃(1 0 0) was studied by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and transmission electron microscopy. It is found that the metal-oxide interaction strongly depends on the deposition temperature. At T < 600 °C, the interfaces are atomically sharp. Local charge transfer happens between the interfacial Cr adatoms and the topmost substrate atoms. The binding energy shift of Cr 2p is dominated by the final state effects. In case of T > 600 °C, bulk diffusion of oxygen in the oxide substrate may occur, which results in a redox reaction and the formation of new reaction phases at the interfaces. In this temperature regime, the binding energy shift of Cr 2p is mainly controlled by the initial state effects.     

Band offsets at the epitaxial anatase TiO2/n-SrTiO3(0 0 1) interface

We have used high-energy resolution X-ray photoelectron spectroscopy to measure valence band offsets at the epitaxial anatase TiO₂(0 0 1)/n-SrTiO₃(0 0 1) heterojunction prepared by molecular beam epitaxy. The valence band offsets range between −0.06 ± 0.05 and +0.16 ± 0.05 eV for anatase thicknesses between 1 and 8 monolayers and three different methods of substrate surface preparation, with no systematic dependence on film thickness. The conduction band offset (CBO) varies over a comparable range by virtue of the fact that anatase and SrTiO₃ exhibit the same bandgap (∼3.2 eV). In contrast, density functional theory predicts the VBO to be +0.55 eV. The lack of agreement between theory and experiment suggests that either some unknown factor in the interface structure or composition excluded from the modeling is influencing the band offset, or that density functional theory cannot accurately calculate band offsets in these oxide materials. The small experimental band offsets have important implications for the use of this interface for fundamental investigations of surface photocatalysis. Neither electrons nor holes are likely to become trapped in the substrate and thus be unable to participate in surface photocatalytic processes.     

The chemistry of C2 perfluoroalkyl iodide on the Cu(1 1 1) single crystal surface

The thermal chemistry of perfluoroethyl iodide (C₂F₅I) adsorbed on Cu(1 1 1) has been investigated by temperature-programmed reaction/desorption (TPR/D), reflection-absorption infrared spectroscopy (RAIRS), and X-ray photoelectron spectroscopy (XPS). I 4d and F 1s XPS spectra show that dissociative adsorption of C₂F₅I to form the surface-bound perfluroethyl (Cu-C₂F₅) moieties occurs at very low temperature (T < 90 K), while the C-F bond cleavage in adsorbed perfluroethyl (Cu-C₂F₅) begins at ca. 300 K. XPS and TPR/D studies further reveal that the reactions of ^βCF₃^αCF_2(ad) on Cu(1 1 1) are strongly dependent on the surface coverage. At high coverages (?0.16 L exposure), the adsorbed perfluroethyl (Cu-C₂F₅) evolves, via α-F elimination, into the surface-bound tetrafluoroethylidene moieties (CuCF-CF₃) followed by a dimerization step to form octafluoro-2-butene (CF₃CFCFCF₃) at 315 K as gas product. The surface-bound (Cu-C₂F₅) decomposes preferentially, at low coverages (?0.04 L), via consecutive α-F abstraction to afford intermediate, trifluoroethylidyne (CuCCF₃), resulting in the final coupling reaction to yield hexafluoro-2-butyne (CF₃CCCF₃) at 425 K. However, at middle coverages (ca. 0.08-0.16 L exposure), the adsorbed perfluroethyl (Cu-C₂F₅) first experiences an α-F elimination and then prefers to loss the second F from β position to yield the intermediate of Cu-CF₂-CFCu (μ-η,η-perfluorovinyl), which may further evolve into hexafluorocyclobutene (CF₂CFCFCF₂) at 350 K through cyclodimerization reaction. Our results have also shown that the surface reactions to yield the products, CF₃CFCFCF₃ and CF₃CCCF₃, obey first-order kinetics, whereas the formation of CF₂CFCFCF₂ follows second-order kinetics.     

A surface X-ray diffraction study of TiO2(1 1 0)(3 × 1)-S

Surface X-ray diffraction has been used to investigate the structure of TiO₂(1 1 0)(3 × 1)-S. In concert with existing STM and photoemission data it is shown that on formation of a (3 × 1)-S overlayer, sulphur adsorbs in a position bridging 6-fold titanium atoms, and all bridging oxygens are lost. Sulphur adsorption gives rise to significant restructuring of the substrate, detected as deep as the fourth layer of the selvedge. The replacement of a bridging oxygen atom with sulphur gives rise to a significant motion of 6-fold co-ordinated titanium atoms away from the adsorbate, along with a concomitant rumpling of the second substrate layer.     

Reaction of O2 with the boron-terminated TaB2(0 0 0 1) surface

X-ray photoelectron spectroscopy has been used to study the clean TaB₂(0 0 0 1) surface and its reaction with O₂. In agreement with previous studies, XPS indicates that the clean surface is boron terminated. The topmost boron layer shows a chemically shifted B 1s peak at 187.1 eV compared to a B 1s peak at 188.6 eV for boron layers below the surface. The 187.1-188.6 eV peak intensity ratio and its variation with angle between the crystal normal and the detector is well described by a simple theoretical model based on an independently calculated electron inelastic mean free path of 15.7 Å for TaB₂. The dissociative sticking probability of O₂ on the boron-terminated TaB₂(0 0 0 1) surface is lower by a factor of 10⁴ than for the metal-terminated HfB₂(0 0 0 1) surface.     

Nucleation of ordered Fe islands on Al2O3/Ni3Al(1 1 1)

Scanning tunneling microscopy (STM) has been used to investigate the nucleation and stability of iron clusters on the Al₂O₃/Ni₃Al(1 1 1) surface as a function of coverage and annealing temperature. We show that atomic beam deposition of iron leads to hexagonally ordered cluster arrangements with a distance of 24 Å between the clusters evidencing the template effect of the alumina film. The shape of the iron clusters is two-dimensional (2D) at deposition temperatures from 130 K to 160 K and three-dimensional (3D) at 300 K. However, the 2D iron clusters grown between 130 K and 160 K are stable up to 350 K.     

An STM study of the Si(0 0 1) (2 × 7)-Gd, Dy surface

Both Gd and Dy induce two different reconstructions of the Si(0 0 1) surface with 2 × 4 and 2 × 7 unit cells. Detailed examination by scanning tunneling microscopy shows that the structure of both phases is essentially the same for both metals. Furthermore, the 2 × 7 unit cell contains structural subunits that are the same as the 2 × 4 structure. The similarities and differences between the two superstructures induced by the two metals are discussed.