薄膜厚度对钛酸钡类薄膜传感器敏感特性的影响

利用氩离子束溅射技术,分别在SiO2/Si衬底上淀积了0.5 mm、1 mm和2 mm的Ba1-xLaxNbyTi1–yO3薄膜,并探讨了薄膜厚度对MIS电容湿敏特性的影响以及薄膜厚度对薄膜电阻的光敏和热敏特性的影响。实验结果表明:0.5 mm膜厚的MIS电容传感器具有比2 mm膜厚的MIS电容传感器高9倍的湿敏灵敏度。用孔隙率和孔径分布物理模型分析得出,薄膜越薄,膜的孔隙率越高,器件的湿敏灵敏度越高。反之,薄膜越厚,光吸收越强,薄膜电阻的光敏灵敏度越高;但薄膜厚度对薄膜电阻热敏特性的影响甚微,敏感机理与薄膜的微观结构可解释这些现象。     

基于并联法布里-珀罗干涉仪游标效应的增敏光纤湿度传感器

为了提高光纤湿度传感器的灵敏度,提出了一种基于并联光纤法布里-珀罗干涉仪(Fabry-Perot interferometers, FPIs)游标效应的增敏型湿度传感器,并进行了实验验证。该传感器由两个基于内径4μm石英毛细管的光纤FPI通过2×2耦合器并联组成,其中一个FPI作为传感FPI,其末端镀有湿敏特性的琼脂糖薄膜,另一个作为参考FPI。论文分析了器件的湿度传感工作原理,实验结果论证了该理论分析的正确性。实验显示,并联FPI游标效应器件在40%RH—60%RH范围内其灵敏度高达0.843 9 nm/%RH,较之单一FPI的灵敏度提高了9倍,是并联FPI反射谱直接波谷追踪波长解调灵敏度的44倍。增加FPI末端湿敏膜厚度,其灵敏度进一步提高至1.12 nm/%RH。该传感器制备简单、尺寸小、灵敏度高,在湿度测试方面具有潜在的应用价值。     

纺织基底无芯片RFID 湿度传感器

研制了一种无湿敏材料的纺织基底无芯片RFID 湿度传感器用于检测环境湿度。通过射频仿真软件 HFSS,获得谐振频率在2. 45 GHz 具有较高品质因数的纺织基底谐振器模型,对以谐振频率偏移量作为灵敏度指标 的检测原理进行了仿真。利用丝网印刷工艺和刻绘工艺分别在不同类型纺织物上制作了无芯片RFID 湿度传感器, 系统研究了制作工艺、纺织品类型和厚度对传感器湿敏特性的影响。结果表明,0. 5 mm 厚度下不同基底类型湿度传 感器的灵敏度由高至低依次为:棉基底、亚麻基底、聚酯纤维基底,恢复特性呈相反顺序,其中棉基底传感器在高湿 范围内平均灵敏度达3. 8 MHz/ %RH,聚酯纤维基底传感器恢复度达86%;相同类型的棉纺织基底下基底厚度越大, 平均湿度灵敏度越高,恢复特性越差。传感器稳定性测试表明传感器具有较好的中长期稳定性。对纺织基底湿度 传感器的感湿机理进行了分析,纺织纤维中的亲水基团与水分子间形成氢键,改变了基底的介电参数,传感器的湿 敏特性与组成纺织品的纤维成分、纤维细度、编织方式有关。     

90nm pMOSFET脱耦等离子体制备氮氧化硅的负偏压温度失稳性(英文)

MOSFET器件继续微缩则闸极氧化层厚度将持续减小,在0.13μm的技术闸极二氧化硅的厚度必须小于2nm,然而如此薄的氧化层直接穿透电流造成了明显的漏电流。为了降低漏电流,二氧化硅导入高浓度的氮如脱耦等离子体氮化制备氮氧化硅受到高度重视。然而,脱耦等离子体氮化制备氮氧化硅的一项顾虑是pMOSFET负偏压温度的失稳性。在此研究里测量了脱耦等离子体氮化制备氮氧化硅pMOSFET负偏压温度失稳性,并且和传统的二氧化硅闸电极比较,厚度1.5nm的脱耦等离子体氮化制备氮氧化硅pMOSFET和厚度1.3nm的二氧化硅pMOSFET经过125℃和10.7MVcm的电场1h的应力下比较阈值电压,结果显示脱耦等离子体氮化制备氮氧化硅pMOSFET在负偏压温度应力下性能较差。在15%阈值电压改变的标准下,延长10年的寿命,其最大工作电压是1.16V,可以符合90nm工艺1V特操作电压的安全范围内。     

基于氧化石墨烯-聚乙烯醇薄膜的光纤光栅湿度传感器

为提高光纤布拉格光栅(fiber Bragg grating,FBG)对环境湿度的敏感性,本文提出将氧化石墨烯-聚乙烯醇溶液涂覆在FBG上进行湿度增敏。首先对传感器的湿度响应进行了理论研究,然后使用提拉镀膜法制作了传感器样品,实验讨论了湿敏溶液的混合比例和薄膜厚度对湿度灵敏度的影响。进一步的实验研究结果表明:当氧化石墨烯和聚乙烯醇溶液的混合比例为9∶1,涂覆 厚度为89 μm时,在相对湿度 50%—60%RH(relative humidity)的 湿度范围内,传感器的湿度灵敏度为2.3 pm/%RH;在60%—70%RH的 湿度范围内,传感器的湿度灵敏度为7.7 pm/%RH;在70%—80% RH的湿度范围内,湿度灵敏度为47.2 pm/%RH。传感器的温度灵敏度为13.2 pm/℃,湿度测量的不稳定性为0.064 7% RH,响应和 恢复时间分别为0.84 s和11.46 s。该传感器制作简便、湿度灵敏度高、稳定性好,具有较大的应用潜力。     

温度传感器及其应用

温度传感器及其应用范家诚（成都国营第７１５厂成都６１００５８）传感器作为机电设备、仪器仪表的＂感官＂器件，广泛应用于国民经济各领域及人们的日常生活中。从实际使用的情况看，在门类众多的传感器中较为突出的有力敏、热敏、光敏、（电）压敏、磁敏、气敏、湿敏等...     

CMOS磁敏/光敏兼容传感器集成电路的设计

研制了一种新型的磁敏传感器和光敏象限传感器兼容的集成电路。该传感器采用0.6μm标准CMOS工艺制造,设计并实现了磁敏传感器、光敏象限传感器及其兼容的信号处理电路的单片集成,并采用有源预处理电路和相关二次采样电路进行磁敏和光敏信号的采集和降噪处理,具有较高的磁场灵敏度(0.0361T-1)感光灵敏度(2V/lx.s),实现了在一个芯片上同时传感磁信号和光信号的功能。     

90 nm pMOSFET脱耦等离子体制备氮氧化硅的负偏压温度失稳性

MOSFET器件继续微缩则闸极氧化层厚度将持续减小,在0.13μm的技术闸极二氧化硅的厚度必须小于2 nm,然而如此薄的氧化层直接穿透电流造成了明显的漏电流.为了降低漏电流,二氧化硅导入高浓度的氮如脱耦等离子体氮化制备氮氧化硅受到高度重视.然而,脱耦等离子体氮化制备氮氧化硅的一项顾虑是pMOSFET负偏压温度的失稳性.在此研究里测量了脱耦等离子体氮化制备氮氧化硅pMOSFET负偏压温度失稳性,并且和传统的二氧化硅闸电极比较,厚度1.5 nm的脱耦等离子体氮化制备氮氧化硅pMOSFET和厚度1.3 nm的二氧化硅pMOSFET经过125℃和10.7MV/cm的电场1 h的应力下比较阈值电压,结果显示脱耦等离子体氮化制备氮氧化硅pMOSFET在负偏压温度应力下性能较差.在15%阈值电压改变的标准下,延长10年的寿命,其最大工作电压是1.16 V,可以符合90 nm工艺1 V特操作电压的安全范围内.     

基于聚乙烯醇-铝薄膜的光纤温湿度传感器研究

提出一种基于聚乙烯醇(PVA)-Al薄膜的光纤倏逝波耦合温湿度传感器研究,主要包括湿度测量传感器和温度补偿传感器。湿度测量传感器是在单模光纤(SMF)熔融拉锥后的锥区涂覆一层PVA湿敏材料制成,温度补偿传感器是在湿度测量传感器的表面镀覆一层金属Al薄膜制成。实验结果表明:当锥区长为14.04mm、PVA涂覆层的厚为2.2μm时,湿度测量传感器的湿度灵敏度为0.154 1dBm/%,温度对它的影响为0.019 7dBm/℃,可实现湿度50~98%的测量;当Al薄膜厚为168.63nm时,温度补偿传感器的温度灵敏度为0.019 1dBm/℃,通过实验装置能够实现对湿度测量传感器的温度补偿。     

AlGaN/GaN型气敏传感器对于CO的响应研究

研究了基于AlGaN/GaN型结构的气敏传感器对于CO的传感性.制备出AlGaN/GaN型气敏传感器器件,并测试得到了器件在50℃时对于不同浓度（1%,9000,8000,5000和1000ppm）的CO的响应情况;测试并分析了1%CO在50和100℃下响应度的差异,计算了通入1%CO前后器件的肖特基势垒高度的变化和灵敏度随电压的分布关系.结果表明,器件的灵敏度强烈依赖于器件的工作温度和通入的气体浓度,随着温度和浓度的增加,器件的灵敏度呈单调增加,器件在100℃空气气氛中表现出了良好恢复性能.     

Thermal stability of Hfl'aON films prepared by physical vapor deposition

We investigate the thermal stability of HfTaON films prepared by physical vapor deposition using high resolution transmission electronic microscope (HRTEM) and X-ray photoelectron spectroscopy (XPS). The results indicate that the magnetron-sputtered HtTaON films on Si substrate are not stable during the post-deposition an-healing (PDA). HfTaON will react with Si and form the interfacial layer at the interface between HfTaON and Si substrate. Hf-N bonds are not stale at high temperature and easily replaced by oxygen, resulting in significant loss of nitrogen from the bulk film. SiO2 buffer layer introduction at the interface of HfTaON and Si substrate may effec-tively suppress their reaction and control the formation of thicker interfacial layer. But SiO2 is a low k gate dielectric and too thicker SiO2 buffer layer will increase the gate dielectric's equivalent oxide thickness. SiON prepared by oxidation of N-implanted Si substrate has thinner physical thickness than SiO2 and is helpful to reduce the gate dielectric's equivalent oxide thickness.     

利用ISSG退火技术实现沉积二氧化硅薄膜平坦化

利用现场水汽生成(in-situ steam generation,ISSG)退火这种新型的低压快速氧化热退火技术,在对沉积二氧化硅薄膜热退火的同时进行补偿氧化生长,最终实现了沉积二氧化硅薄膜的平坦化.实验数据表明,ISSG退火补偿生长后整个晶圆表面的薄膜厚度波动(最大值与最小值之差)从0.76nm降到了0.16nm,49点厚度值的标准偏差从0.25nm降到了0.04nm.同时,薄膜的隧穿场强增加到4.3MV/cm,硅氧界面与传统的氧气快速退火工艺相比更为良好.实验结果为二氧化硅薄膜平坦化提供了新的思路,对实际生产具有重要意义.     

在SiO2中掺Al对Au/纳米(SiO2/Si/SiO2)/p-Si 结构电致发光的影响

利用射频磁控溅射方法,制成纳米SiO2层厚度一定而纳米Si层厚度不同的纳米(SiO2/Si/SiO2)/p-Si结构和纳米(SiO2∶Al/Si/SiO2∶Al)/p-Si结构,用磁控溅射制备纳米SiO2∶Al时所用的SiO2/Al复合靶中的Al的面积百分比为1%．上述两种结构中Si层厚度均为1—3nm,间隔为0.2nm．为了对比研究,还制备了Si层厚度为零的样品．这两种结构在900℃氮气下退火30min,正面蒸半透明Au膜,背面蒸Al作欧姆接触后,都在正向偏置下观察到电致发光（EL）．在一定的正向偏置下,EL强度和峰位以及电流都随Si层厚度的增加而同步振荡,位相相同．但掺Al结构的发光强度普遍比不掺Al结构强．另外,这两种结构的EL具体振荡特性有明显不同．对这两种结构的电致发光的物理机制和SiO2中掺Al的作用进行了分析和讨论．     

Novel capacitance-type humidity sensor based on multi-wall carbon nanotube/SiO2 composite films

A novel capacitance-type relative humidity (RH) sensor based on multi-wall carbon nanotubc/SiO2 (MWCNTs/SiO2) composite film is reported.Details of the fabrication process,possible sensing mechanism and sensing characteristics,such as linearity and sensitivity,are described.The capacitance of the MWCNTs/SiO2 composite film shows typical concentration percolation behavior with increasing MWCNT loading.At loadings below the percolation threshold (1.842wt％),the sensor capacitance increases obviously with increasing MWCNTs.The water condensed in the MWCNTs/SiO2 layer can lower the percolation threshold and increase the sensor capacitance.The sensor with MWCNT concentration of 1 wt％ has the best properties.The sensor has a humidity sensitivity of about 673 pF/％ RH and a linearity correlation of 0.98428.The response time of the sensor to RH is about 40 s and the recovery time is about 2 s.     

非晶态SiO2过渡层对生长C轴取向LiNbO3薄膜的影响

采用磁控溅射方法,在Si衬底和LiNbO3薄膜之间引入SiO2过渡层制备LiNbO3薄膜。采用X射线衍射（XRD〉、傅里叶变换红外吸收光谱（FT-IR）和扫描电子显微镜（SEM）对LiNbO3薄膜的结晶取向、组成成分和表面形貌进行了表征,重点研究了非晶态SiO2过渡层对LiNbO3薄膜C轴取向的影响。结果表明,非晶态S...     

Measurement of mean free paths for inelastic electron scattering of Si and SiO2

The effects of accelerating voltage and collection angle on the mean free path for all inelastic electron scattering (lambdap), which is an important parameter for determining specimen thickness by using electron energy-loss spectroscopy, were investigated with crystalline Si and amorphous SiO2. First, thickness of Si film was measured with the convergent-beam electron diffraction method, while thickness of SiO2 particles was estimated from their spherical shape. Then from electron energy-loss spectra, lambdap was evaluated for Si film and SiO2 particles by changing the accelerating voltage (100 to approximately 300 kV) and the collection angle for the scattered electrons. Under the condition of no objective aperture, lambdap for Si film and SiO2 particles was found to increase with the increase of accelerating voltage and to take values of 180+/-6 nm (Si) and 247+/-8 nm (SiO2) at 300 kV. Also, it was found that lambdap in both cases decreases drastically with the increase of collection angle in the range smaller than 25 mrad, while it tends to take a constant value at the collection angle larger than 25 mrad at 200 kV.     

Visibility of Si nanoparticles embedded in an amorphous SiO2 matrix

The visibility of a Si crystalline nanoparticle of diameter 2 nm embedded in an amorphous SiO(2) layer is evaluated quantitatively by multislice calculation. The visibility depends on the crystal orientation of the Si nanoparticle, the thickness of the amorphous SiO(2) layer and the defocus. Scherzer defocus always gives the highest visibility at any crystal orientation. The visibility is higher when the incident beam is parallel to the (111) planes and the (111) fringes are most visible. The image of a Si nanoparticle is obscured by random images from the amorphous SiO(2) layer and the Si nanoparticle becomes invisible when it is misoriented or the amorphous layer is thicker than 60 nm. The probability that a Si nanoparticle can be distinguished from the random noise of amorphous images is 89% when the thickness of the amorphous SiO(2) layer is 12 nm, but this is reduced to 21% when the layer is 48 nm thick. These quantitative results are useful when estimating the density of Si nanoparticles including invisible nanoparticles.     

The origination and optimization of Si/SiO/sub 2/ interface roughness and its effect on CMOS performance

As CMOS device dimensions scale down to 100 nm and beyond, the interface roughness between Si and SiO/sub 2/ has become critical to device performance and reliability. Si/SiO/sub 2/ interface roughness degrades channel mobility decreasing drive currents. The authors have used atomic force microscopy to study surface roughness in the processing of 0.16 /spl mu/m CMOS integrated circuits. All of the process steps that could potentially affect the interface roughness have been studied. The results show that oxidation is the major contributor to the interface roughness. The rms roughness is found to be linearly dependent on oxide thickness. Transistors with Si/SiO/sub 2/ interface rms roughness that has been reduced from 1.6 to 1.1 /spl Aring/ by reducing oxide thicknesses show improved device drive currents. This technique for interfacial smoothing and device performance improvement has the advantage of being easily implemented in today's technology.     

基于SPP的1550纳米光波导的超长传输特性

采用严格电磁理论研究了介质-金属-介质型光波导激发表面等离子激元(SPPs)的电磁特性,对比分析了SPP波在SiO2/Ag/SiO2和Si/Ag/Si光波导的传输距离。研究表明,对于1550nm光通信波长入射光及10nm厚的金属银膜层,SiO2/Ag/SiO2光波导中非对称SPP的传输距离可达40cm,明显高于对称SPP波的传输距离,也显著高于非对称SPP波在Si/Ag/Si波导中的传输距离,具有超长传输距离;随着金属层厚度的增加SPP波的传输距离明显减小,当银层厚度超过50nm后,非对称的SPP在SiO2/Ag/SiO2及Si/Ag/Si波导中的传输距离趋于一致,约为200nm;此时银层厚度变化对SPP波传输距离的影响明显减弱。