Laser annealing in combination with mass spectroscopy, a technique to study deuterium on tokamak carbon samples, a tool for detritiation

In this study, a method is presented based on mass spectroscopy to measure the areal density of deuterium on a graphite surface exposed to tokamak discharges. The studied sample was cut from a bumper limiter exposed in the TEXTOR tokamak and annealed by a 1 J Excimer laser (KrF). The energy used was 400 mJ cm⁻², which is below the threshold for ablation, 1 J cm⁻². The release of HD and D₂ was measured by a mass spectroscopy set-up and no other species released from the sample were detected in this experiment. The amount of D released from the sample after 20 laser pulses was measured to 7 × 10¹⁶ D atoms per cm⁻² (for this particular sample) and most of the hydrogen at the surface was released in the first pulse, as checked by nuclear reaction analysis (NRA) techniques, which gave changes of the amount of deuterium before and after laser annealing. The sensitivity in this experiment was 5 × 10¹⁴ atoms per cm⁻² for HD and 5 × 10¹³ atoms per cm⁻² for D₂.     

Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions

Wurtzite GaN epilayers irradiated at room temperature with 308 MeV ¹²⁹Xe³⁵⁺ ions to fluences of 1 × 10¹³ and 3 × 10¹³ cm⁻² have been studied by contact mode atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), micro-Raman scattering and photoluminescence (PL) spectroscopy. The AFM images showed that the surface of GaN films was etched efficiently due to the Xe ion irradiation. The initial step-terrace structure on GaN surface was eliminated completely at a fluence of 3 × 10¹³ cm⁻². HRXRD and Raman results indicated that the Xe ion irradiation led to a homogenous lattice expansion throughout the entire ∼3 μm-thick GaN films. The lattice expansion as well as the biaxial compressive stress of the films was increasing with the increase of ion fluence. PL measurements showed that a dominant yellow luminescence band in the as-grown GaN films disappeared, but a blue and a green luminescence bands were produced after irradiation. Based on these results, the strong electronic excitation effect of 308 MeV Xe ions in GaN is discussed.     

Amorphisation of ZnAl2O4 spinel under heavy ion irradiation

ZnAl₂O₄ spinels have been irradiated with several ions (Ne, S, Kr and Xe) at the IRRSUD beamline of the GANIL facility, in order to determine irradiation conditions (stopping power, fluence) for amorphisation. We observed by transmission electron microscopy (TEM) that with Xe ions at 92 MeV, individual ion tracks are still crystalline, whereas an amorphisation starts below a fluence of 5 × 10¹² cm⁻² up to a total amorphisation between 1 × 10¹³ and 1 × 10¹⁴ cm⁻². The coexistence of amorphous and crystalline domains in the same pristine grain is clearly visible in the TEM images. All the crystalline domains remain close to the same orientation as the original grain. According to TEM and X-ray Diffraction (XRD) results, the stopping power threshold for amorphisation is between 9 and 12 keV nm⁻¹.     

Xe-implanted zirconium oxycarbide studied by variable energy positron beam

The effect of annealing on defects and the formation of Xe bubbles were investigated in zirconium oxycarbide implanted with 800-keV¹³⁶Xe²⁺ ions at two fluences 1 × 10¹⁵ and 1 × 10¹⁶ Xe/cm². Doppler broadening technique combined with slow positron beam was used. The analysis of the S depth profiles and S-W maps revealed that in the as-implanted samples at both fluences Xe bubbles are not formed. The post-implantation annealing of the samples implanted at 1 × 10¹⁶ Xe/cm² caused formation of Xe bubbles. The response of the lower implantation dose samples to this post implantation annealing was found rather complicated and is discussed.     

The dissociation of CH and CH2 molecules in He and N2 at beam energies of 80-250 keV and possible implications for radiocarbon mass spectrometry

Isotopic ratios of ¹⁴C at natural levels can be efficiently measured with accelerator mass spectrometry (AMS). In compact AMS systems, ¹³CH and ¹²CH₂ molecular interferences are destroyed in collisions with the stripper gas, a process which can be described by dissociation cross sections. These dissociation cross sections determine the gas areal density required for sufficient attenuation of the interfering molecular beams, and are therefore key parameters in the effort to further reduce the terminal voltage and thus the size of the AMS system. We measured the dissociation cross sections of ¹³CH and ¹²CH₂ in N₂ and He in the energy range of 80-250 keV. In N₂, cross sections were constant for energies above 100 keV with average values per molecule of (8.1 ± 0.4) × 10⁻¹⁶ cm² for ¹³CH and (9.5 ± 0.5) × 10⁻¹⁶ cm² for ¹²CH₂. In He, cross sections were constant over the full measured range of 80-150 keV with average values of (4.2 ± 0.3) × 10^{− 16} cm² and (4.8 ± 0.4) × 10⁻¹⁶ cm², respectively. A considerable reduction of the terminal voltage from the currently used 200 kV while using N₂ for ¹³CH and ¹²CH₂ molecule dissociation is not possible: the required N₂ areal densities of ∼1.4 μg/cm², consequential angular straggling and a decreasing 1+ charge state fraction would reduce the ion beam transmission too much. This is not the case for He: sufficient molecule dissociation can be obtained with gas densities of ∼0.4 μg/cm², for which angular straggling is relatively small. In addition, the 1+ charge state fraction still increases at lower stripping energies. Thus, the usage of He for stripping and molecule dissociation might allow the development of even smaller ¹⁴C-AMS systems than available today.     

Effect of swift heavy ion irradiation on structural, optical and electrical properties of Cd2SnO4 thin films

Transparent conducting cadmium stannate thin films were prepared by spray pyrolysis method on Corning substrate at a temperature of 525 °C. The prepared films are irradiated using 120 MeV swift Ag⁹⁺ ions for the fluence in the range 1 × 10¹² to 1 × 10¹³ ions cm⁻² and the structural, optical and electrical properties were studied. The intensity of the film decreases with increasing ion fluence and amorphization takes place at higher fluence (1 × 10¹³ ions cm⁻²). The transmittance of the films decreases with increasing ion fluence and also the band gap value decreases with increasing ion fluence. The resistivity of the film increased from 2.66 × 10⁻³ Ω cm (pristine) to 5.57 × 10⁻³ Ω cm for the film irradiated with 1 × 10¹³ ions cm⁻². The mobility of the film decreased from 31 to 12 cm²/V s for the film irradiated with the fluence of 1 × 10¹³ ions cm⁻².     

Transport properties of I, Te and Xe in thoria-urania SIMFUEL

Diffusion properties for volatile fission products iodine and tellurium, and gaseous product xenon in a solid solution of thoria-2 mol% urania doped with fission products for simulating 2 at.% burnup were obtained by studying the release kinetics of the species from trace-irradiated fuel samples at different temperatures using post-irradiation annealing technique. Bulk diffusion coefficients for Xe, I and Te were evaluated in a well-defined powder sample of particle size in the range of 37-45 μm (25 m² kg⁻¹ BET surface area) with 97% of theoretical density. Temperature dependences of the apparent diffusion coefficients of Xe, I and Te derived from this study could be expressed in the form of Arrhenius equations for the respective cases as ln (s⁻¹) = −(19,480 ± 3300)/T − 9.3 ± 2.2 and ln (s⁻¹) = −(31,234 ± 3000)/T − 3.7 ± 2.0, (1273 ? T/K ? 1773) and ln (s⁻¹) = −(22,755 ± 1364)/T − 0.003 ± 0.775, 1700 ? T/K ? 1800. For Xe diffusion the activation energy and frequency factor are 189 kJ mol⁻¹ and 0.997 s⁻¹, respectively. For I and Te the activation energy values are 162 and 260 kJ mol⁻¹, respectively. The respective frequency factors for I and Te are 9.1 × 10⁻⁵ and 2.5 × 10⁻² s⁻¹. On comparison with the reported data in pure urania and thoria matrices a lowering of activation energy for all three species was observed in case of the fission product doped matrix. On the other hand the frequency factor has increased only in the case for diffusion of Xe. This suggests different mechanisms of transport for Xe and volatile fission products I and Te in the fuel matrix.     

Flux dependent MeV ion induced modification of nano-Ag/Si system

Thin films of Ag (1.5 nm thick) are grown on Si (1 1 1) substrates using evaporation method in high vacuum condition and due to non-wetting nature of silver, isolated islands of mean size ≈12.0 nm have been formed on the surface. Au²⁺ (1.5 MeV) ions have been used to irradiate the above systems at various fluences (5 × 10¹³-1 × 10¹⁵ cm⁻²) at an impact angle of 5° and at a flux of 6.3 × 10¹² cm⁻² s⁻¹ (corresponding to a beam current density of 2.0 μA cm⁻² for Au²⁺ ions). Ion beam induced embedding is observed to begin at a fluence of 1 × 10¹⁴ cm⁻² for this high flux whereas low flux irradiations (current density ≈ 0.02 μA cm⁻²) of Au²⁺ ions under similar irradiation conditions did not yield embedding (impact angle 5°). High resolution transmission electron microscopy measurement showed no mixing in the form of silicide formation. These results are compared with high flux modifications in Au/Si system.     

Ion induced segregation in gold nanostructured thin films on silicon

We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au²⁺ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6 × 10¹³, 1 × 10¹⁴ and 5 × 10¹⁴ ions cm⁻² at a high beam flux of 6.3 × 10¹² ions cm⁻² s⁻¹ show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6 × 10¹³ ions cm⁻²) transport has been found to be associated with the formation of gold silicide (Au₅Si₂). At a high fluence value of 5 × 10¹⁴ ions cm⁻², disassociation of gold silicide and out-diffusion lead to the segregation of gold to defect - rich surface and interface regions.     

Radiation damage in ZnO ion implanted at 15 K

Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 × 10¹¹ to 7 × 10¹⁶ cm⁻². The implantation and the subsequent damage analysis by Rutherford backscattering spectrometry (RBS) in channelling geometry were performed in a special target chamber at 15 K without changing the target temperature of the sample. To analyse the measured channelling spectra the computer code DICADA was used to calculate the relative concentration of displaced lattice atoms.Four stages of the damage evolution can be identified. At low ion fluences up to about 2 × 10¹³ cm⁻² the defect concentration increases nearly linearly with rising fluence (stage I). There are strong indications that only point defects are produced, the absolute concentration of which is reasonably given by SRIM calculations using displacement energies of E_d(Zn) = 65 eV and E_d(O) = 50 eV. In a second stage the defect concentration remains almost constant at a value of about 0.02, which can be interpreted by a balance between production and recombination of point defects. For ion fluences around 5 × 10¹⁵ cm⁻² a second significant increase of the defect concentration is observed (stage III). Within stage IV at fluences above 10¹⁶ cm⁻² the defect concentration tends again to saturate at a level of about 0.5 which is well below amorphisation. Within stages III and IV the damage formation is strongly governed by the implanted ions and it is appropriate to conclude that the damage consists of a mixture of point defects and dislocation loops.     

Formation of InAs nanocrystals in Si by high-fluence ion implantation

We have studied the formation of InAs precipitates with dimensions of several nanometers in silicon by means of As (245 keV, 5 × 10¹⁶ cm⁻²) and In (350 keV, 4.5 × 10¹⁶ cm⁻²) implantation at 500 °C and subsequent annealing at 900 °C for 45 min. RBS, SIMS, TEM/TED, RS and PL techniques were used to characterize the implanted layers. The surface density of the precipitates has been found to be about 1.2 × 10¹¹ cm⁻². Most of the crystallites are from 3 nm to 6 nm large. A band at 1.3 μm has been registered in the low-temperature PL spectra of (As + In) implanted and annealed silicon crystals. The PL band position follows the quantum confinement model for InAs.     

Electronic and atomic structure modifications of copper nitride films by ion impact and phase separation

We have studied electronic and atomic structure modifications of Cu₃N films under 100 keV Ne and 100 MeV Xe ion impact. Cu₃N films were prepared on R(11-2 surface)-cut-Al₂O₃ substrates at 250 °C by using a RF-magnetron sputter deposition method. X-ray diffraction (XRD) shows that unirradiated films are polycrystalline with (1 0 0) orientation of cubic structure. We find that the electrical resistivity (∼10 Ω cm before ion impact) decreases by more than two orders of magnitude after the Ne impact at a fluence of ∼10¹³ cm⁻², where no Cu phase separation is observed. For further ion impact (larger than ∼10¹⁵ cm⁻²), XRD shows Cu diffraction peak (Cu phase separation), and the resistivity decreases further (three orders of magnitude). Decomposition and phase separation are discussed based on these results, as well as temperature dependence of the resistivity and optical absorption. The results of 100 MeV Xe ion impact are compared with those of Ne ion impact.     

Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use

GaInP/GaAs/Ge triple-junction solar cells were irradiated with 0.28, 0.62 and 2.80 MeV protons with fluences ranging from 1 × 10¹⁰ cm⁻² to 1 × 10¹³ cm⁻². Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements. The degradation rates of the short circuit current, open circuit voltage, and maximum power output increase with fluence, but decrease with increasing proton energy. It was also observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.     

HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions

In_0.15Ga_0.85N/GaN bilayers irradiated with 2.3 MeV Ne and 5.3 MeV Kr ions at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro-Raman scattering. The Ne ion fluences were in the range from 1 × 10¹² to 1 × 10¹⁵ cm⁻², and the Kr ion fluences were in the range from 1 × 10¹¹ to 1 × 10¹³ cm⁻². Results show that the structures of both In_0.15Ga_0.85N and GaN layers remained almost unchanged for increasing fluences up to 1 × 10¹³ and 1 × 10¹² cm⁻² for Ne and Kr ion irradiations, respectively. After irradiation to higher fluences, the GaN layer was divided into several damaged layers with different extents of lattice expansion, while the In_0.15Ga_0.85N layer exhibited homogenous lattice expansion. The layered structure of GaN and the different responses to irradiation of the GaN and In_0.15Ga_0.85N layers are discussed.     

Effects of O swift heavy ion irradiation on indium oxide thin films

Indium oxide thin films deposited by spray pyrolysis were irradiated by 100 MeV O⁷⁺ ions with different fluences of 5 × 10¹¹, 1 × 10¹² and 1 × 10¹³ ions/cm². X-ray diffraction analysis confirmed the structure of indium oxide with cubic bixbyite. The strongest (2 2 2) orientation observed from the as-deposited films was shifted to (4 0 0) after irradiation. Furthermore, the intensity of the (4 0 0) orientation was decreased with increasing fluence together with an increase in (2 2 2) intensity. Films irradiated with maximum fluence exhibited an amorphous component. The mobility of the as-deposited indium oxide films was decreased from ∼78.9 to 43.0 cm²/V s, following irradiation. Films irradiated with a fluence of 5 × 10¹¹ ions/cm² showed a better combination of electrical properties, with a resistivity of 4.57 × 10⁻³ Ω cm, carrier concentration of 2.2 × 10¹⁹ cm⁻³ and mobility of 61.0 cm²/V s. The average transmittance obtained from the as-deposited films decreased from ∼81% to 72%, when irradiated with a fluence of 5 × 10¹¹ ions/cm². The surface microstructures confirmed that the irregularly shaped grains seen on the surface of the as-deposited films is modified as “radish-like” morphology when irradiated with a fluence of 5 × 10¹¹ ions/cm².     

Swift heavy ion irradiation induced texturing in NiO thin films

NiO thin films grown on Si(1 0 0) substrate by electron beam evaporation and sintered at 500 and 700 °C were irradiated with 120 MeV Au⁹⁺ ions. The FCC structure of the sintered films was retained up to the highest fluence (3 × 10¹³ ions cm⁻²) of irradiation. In the low fluence (?1 × 10¹³ ions cm⁻²) regime however, the evolution of the XRD pattern with fluence showed a wide variation, critically depending upon their initial microstructure. Though irradiation is known to induce disorder in the structure, we observe improvement in crystallization and texturing at intermediate fluences of irradiation.     

Ion bombardment induced changes in the optical and electrical properties of polycarbonate

The changes in the optical and electrical properties of polycarbonate (PC) films, bombarded with He and Ar ion beams, have been studied. The PC films were divided into two groups where the first group was bombarded with 130 keV He ions of fluences ranged from 1 × 10¹⁴ cm⁻² to 2 × 10¹⁶ cm⁻², while the second one was bombarded with 320 keV Ar of fluences (1 × 10¹³ cm⁻² and 1 × 10¹⁵ cm⁻²). The surface morphology of the unirradiated and irradiated PC films was studied using scanning electron microscopy (SEM) technique. The optical properties of the two groups have been carried out using UV-Vis spectrophotometer and the direct current (DC) electrical conductivity was also performed. The obtained results showed a decrease in the optical energy gap, the optical activation energy and the electrical activation energy with increasing the fluence of both He and Ar ions. Meanwhile, an increase in the DC conductivity was obtained with increasing the fluence of the ions. The bombardment of the PC films with He and Ar ion beams induced formation of carbon clusters near the polymer surface and, also, resulted in scission in the polymer chains.     

Tailoring optical and electrical properties of MgO thin films by 1.5 MeV H implantation to fluences

Thin films of magnesia (MgO) with (1 0 0) dominant orientations were implanted with 1.5 MeV H⁺ ions at room temperature to various fluences of 10¹³, 10¹⁴ and 10¹⁵ ions/cm². X-ray analysis unambiguously showed crystallinity even after a peak damage fluence of 10¹⁵ ions/cm². Rutherford backscattering spectrometry combined with ion channeling (RBS/C) was used to analyze radiation damages and defect distributions. Optical absorption band observed at 5.7 eV in implanted films was assigned to the anion vacancies and the defect was completely disappeared on annealing at 450 °C. Number of F-type defects estimated was 9.42 × 10¹⁵ cm⁻² for the film implanted with 10¹⁵ ions/cm². DC electrical conductivity of 4.02 × 10⁻⁴ S cm⁻¹ was observed in the implanted region which was three orders higher than the as-deposited films. In unison, film surface was modified as a result of the formation of aggregates caused by the atomic mixing of native matrix atoms (Mg and O) and precipitated hydrogen.     

Measurement of neutron flux distribution in the irradiation channel in the Ghana Research Reactor-1 using Monte Carlo method

The Monte Carlo method was used to determine the neutron fluxes in the irradiation channels of the Ghana Research Reactor-1. The MCNP5 code was used for this purpose to simulate the radial and axial distribution of the neutron fluxes within all the 10 irradiation channels. After the MCNP simulation, it was observed that axially, the fluxes rise to a peak before falling and then finally leveling out. It was also observed that the fluxes were higher in the center of the irradiation channels; the fluxes got higher as it moved toward the center of the core. The multiplication factor (k_eff) was observed as 1.000397 ± 0.0007. Radially, the thermal, epithermal and fast neutron flux in the inner irradiation channel range from 1.15 × 10¹² n/cm².s ± 0.1018 × 10¹¹ − 1.19 × 10¹² n/cm².s ± 0.1172 × 10¹¹, 1.21 × 10¹² n/cm².s ± 0.1014 × 10¹¹ − 1.36 × 10¹² n/cm².s ± 0.1038 × 10¹¹ and 2.47 × 10¹¹ n/cm².s ± 0.1120 × 10¹⁰ − 2.97 × 10¹¹ n/cm².s ± 0.1255 × 10¹⁰ respectively. For the outer channel, the flux range from 7.14 × 10¹¹ n/cm².s ± 0.1381 × 10¹⁰ − 7.38 × 10¹¹ n/cm².s ± 0.208 × 10¹⁰ for thermal, 1.94 × 10¹¹ n/cm².s ± 0.1014 × 10¹⁰ − 2.51 × 10¹¹ n/cm².s ± 0.1281 × 10¹⁰ for epithermal and 3.69 × 10¹⁰ n/cm².s ± 0.8912 × 10⁸ − 5.14 × 10¹⁰ n/cm².s ± 0.1009 × 10⁹ for fast. The results have shown that there are flux variations within the irradiation channels both axially and radially.     

Measurement of the leaching rate of radionuclide Cs from the solidified radioactive sources in Portland cement mixed with microsilica and barite matrixes

Portland cement was mixed with radionuclide ¹³⁴Cs to produce low-level radioactive sources. These sources were surrounded with cement mixed with different materials like microsilica and barite. The leaching rate of ¹³⁴Cs from the solidified radioactive source in Portland cement alone was found to be 4.481 × 10⁻⁴ g/cm² per day. Mixing this Portland cement with microsilica and with barite reduced significantly the leaching rate to 1.091 × 10⁻⁴ g/cm² per day and 3.153 × 10⁻⁴ g/cm² per day for 1 wt.% mixing, and to 1.401 × 10⁻⁵ g/cm² per day and 1.703 × 10⁻⁴ g/cm² per day for 3 wt.% mixing, respectively. It was also found that the application of a latex paint reduced these leaching rates by about 6.5%, 20.3% and 13.3% for Portland cement, cement mixed with microsilica and with barite, respectively. The leaching data were also analyzed using the polynomial method. The obtained results showed that cement mixed with microsilica and with barite can be effectively used for radioactive sources solidification.