金刚石薄膜为掩膜离子束室温溅射可控制备硅纳米圆锥阵列

以金刚石薄膜为掩膜,采用低能Ar+室温倾角溅射的方法制备密度和形貌可控的硅纳米圆锥阵列.扫描电子显微镜(SEM)结果表明,离子束溅射后得到的硅纳米圆锥密度与作为掩膜的金刚石薄膜颗粒密度相当;硅纳米圆锥的形貌与离子束入射角有密切关系,随着入射倾角由30°增大到75°;得到的硅纳米圆锥的锥角由73°减小到23°,其长径比从500 am/360 nm增大到2400nm/600nm.由于金刚石比硅材料的溅射速率更低,因此以金刚石薄膜为掩膜可以制备较大长径比的硅纳米圆锥阵列;随着入射角的增大,离子束溅射诱导的表面原子有效扩散系数减小和溅射速率增大是硅纳米圆锥的锥角减小、长径比增大的主要原因.     

离子束辅助沉积立方氮化硼的试验研究

运用离子束辅助沉积(IBAD)法在硅片上制备了立方氮化硼(c—BN)薄膜，研究了辅助能量、辅助束流及辅助束中氮气含量等参数对膜中c—BN含量的影响。用红外光谱(FTIR)及X射线光电子能谱(XPS)分析技术对得到的c—BN膜进行了分析。结果表明：合适的离子辅助能量能够获得c—BN含量高的薄膜；膜中c—BN的含量随辅助气体中N2含量的提高而增加；辅助束流对薄膜的形成影响不明显。     

Ion energy dependence of interface parameters of ion beam sputter deposited W/Si interfaces

W thin films and W/Si/W tri-layer samples have been deposited on c-Si substrates in a home-made ion beam sputtering system at 1.5 × 10⁻³ Torr Ar working pressure, 10 mA grid current and at different Ar⁺ ion energies between 600 and 1200 eV. Grazing incidence X-ray reflectivity (GIXR) measurements in specular and diffused (detector scan) geometry have been carried out on the above samples. The measured GIXR spectra were fitted with theoretically simulated spectra and the different interface parameters viz., interface width, interface roughness and interface diffusion have been estimated for both Si-on-W and W-on-Si interfaces in the above samples. The variation of the above interface parameters as a function of ion energy used for W sputtering has been studied.     

低能Ar离子束辅助沉积Cu、Ag、Pt薄膜

采用低能Ar离子束辅助沉积方法,在Mo/Si(100)衬底上分别沉积Cu、Ag、Pt薄膜.实验发现,若辅助轰击的Ar离子束沿衬底法线方向入射,当离子/原子到达比为0.2时,沉积的Cu膜呈(111)晶向,而Ag、Pt膜均呈(111)和(100)混合晶向.当辅助轰击的Ar离子束偏离衬底法线方向45°入射时,沉积的Cu、Ag、Pt膜均呈(111)择优取向.采用Monte Carlo方法模拟能量为500 eV的Ar离子入射单晶Ag所引起的原子级联碰撞过程,分别算得Ar离子入射单晶Ag(100)面、(111)面时,Ar离子的溅射率与入射角和方位角的关系.对离子注入的沟道效应和薄膜表面的自由能对薄膜择优取向的影响作了初步的探讨和分析.     

离子束增强沉积碳膜及其在抑制电子发射中的应用

栅电子发射是影响行波管工作性能和制约其使用寿命的主要因素。国内研制的导弹雷达制导用行波管因存在严重的栅电子发射现象,寿命只有70h,不能付诸军事应用。采用离子束增强沉积的方法在栅网表面沉积一层碳膜后,可有效地抑制栅电子发射,使行波管寿命超过了1000h,在军事和航天领域获得了成功应用。报导了低能离子束增强沉积类金刚石薄膜和高能离子束增强沉积类石墨碳膜的制备技术、结构性能及其在抑制栅电子发射中的应用和机理研究的结果。     

氩离子辅助沉积的羟基聚磷酸钙钠膜的结构与溶解特性

用60keV的Ar离子束辅助将羟基聚磷酸钙钠材料沉积于Ti合金表面,通过X射线衍射谱(XRD)、付里叶变换红外谱(FTIR)和X射线光电子能谱(XPS)对沉积膜进行表征,发现膜呈非晶或无明显的结晶度,膜层元素与基体材料Ti相互扩散明显,沉积中出现C和O污染,膜中引入了CO_3~(2-)根基团。膜的Ca-P比随辅助离子剂量的增高而降低,而在盐溶液中的耐溶解性则随辅助剂量的增加而增强。实验中还发现,这种Ar离子辅助沉积的膜,在Hanks溶液中的电化学特性退火前后表现出明显的差异:退火前,膜一直呈现较高的钝性。当电极电位从0升至1500mV时,反映溶解特性的极化电流仅从1μA增至2μA,而在氩气氛中退火后,当电极电位≤200mV时,极化电流极低(<0.5μA),耐溶性明显优于前者;当电位在400—800mV之间时与退火前相差不大。但当电极电位>800mV时,其电化学特性很快变坏,极化电流迅速增大,溶解率猛增。     

低能Ar离子束辅助沉积Ag(111)薄膜

采用低能Ar离子束辅助沉积方法,在Mo/Si(100)基底上制备Ag膜。实验发现,用Ar离子束溅射沉积的Ag膜呈(111)择优取向。若在溅射沉积Ag膜的同时,用能量为500eV的Ar离子束沿衬底法线方向对Ag膜进行辅助轰击,当离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子到达比增大到0.18时,Ag膜呈(111)和(100)混合晶向。若Ar离子的入射角为35.26°,离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子比增大到0.18时,Ag膜呈(111)和微弱的(100)混合晶向。若Ar离子的入射角为54.7°,离子/原子到达比为0.06时,沉积的Ag膜呈很强的(111)择优取向。     

Deposition of polycrystalline Si thin films on glass substrates by direct negative Si ion beam deposition

Polycrystalline Si (Poly-Si) thin films were deposited on a glass substrate by direct negative Si (Si⁻) ion beam deposition. The glass substrate temperature was kept constant at 500 °C for all depositions. Prior to deposition, the ion energy spread and ion-to-atom arrival ratio were evaluated as a function of the ion beam energy.The Si⁻ ion energy spread was less than 10% regardless of the ion energy, while the ion-to-atom arrival ratio increased proportionally from 1.3 to 1.6 according to the ion beam energy.Atomic force microscopy images showed that a relatively rough surface was obtained at 50 eV of Si⁻ ion energy and it is also concluded that the Si⁻ ion beam irradiation at 50 eV is effective to deposit Si thin film with small grains as shown in Fig. 3.     

离子束辅助沉积制备TiN/Si3N4纳米超硬膜的工艺研究

采用离子束辅助沉积法(Ion beam assisted deposition,IBAD)在单晶硅片上进行沉积制备了TiN/Si3N4纳米复合超硬薄膜;研究了辅助束流、轰击能量和Ti:Si靶面积比等工艺参数对TiN/Si3N4超硬纳米复合薄膜性能的影响.此外采用纳米硬度计、光电子能谱(X-ray photoelectron spectrum,XPS)和x射线衍射分析(X-raydiffraction,XRD)方法研究了纳米复合薄膜的性能、成分与组织结构;采用原子力显微镜(Atomic forcemicroscopy,AFM)分析了薄膜的表面形貌,并初步探讨了TiN/Si3N4纳米复合超硬薄膜的生长机理.     

9Cr18钢上离子束辅助沉积TiCxNy膜的研究

用离子束辅助沉积技术９Ｃｒ１８钢基体上形成了ＴｉＣｘＮｙ膜,ＴＥＭ观察膜呈多晶结构,具有（１１１）,（２００）和（２２０）择优取向。ＡＥＳ和ＸＰＳ分析进一步证实,ＴｉＣｘＮｙ膜呈含氧配置。膜的硬度与Ｎ含量有关,Ｎ的含量过高时硬度下降。在本实验条件下以离子注量为３×１０＾１７／ｃｍ６２时硬度最高,干摩擦表明膜的抗氧化性能优良,它的存在能有效抑制基体在摩擦过程中氧化皮的形成,显改善基体的磨损特性,并     

Effect of nitrogen flow ratios on the microstructure and properties of (TiVCr)N coatings by reactive magnetic sputtering

The present paper reports the influence of growth conditions on the characteristics of (TiVCr)N coatings prepared by dc reactive magnetron sputtering at various N₂-to-total (N₂ + Ar) flow ratios, R_N. The crystal structures, microstructure, and mechanical, electrical and optical properties under the R_N were characterized. Results indicate that the TiVCr alloy and nitride coatings exhibited a single body-centered cubic type (BCC) and a face-centered cubic (FCC) solid solution structure, respectively. As the R_N increases, the preferred orientation (TiVCr)N coatings changed to (2 0 0). The grain size also had a significant increase. The microstructure of the coatings obviously changed from a porous to a compact and dense columnar structure. Accordingly, the physical properties of the coatings were improved due to the densification of the structure. The hardness of the (TiVCr)N was enhanced to about 15 GPa, and the electrical resistivity was lowered to 10,000 μΩ-cm.     

Effect of Fe ion implantation on tribological properties and Raman spectra characteristics of diamond-like carbon film

1 Introduction It is well known that DLC (diamond-like carbon)prepared by physical vapor deposition, plasma en-hanced chemical vapor deposition (PECVD) and otherplasma processing is an amorphous carbon materialcontaining sp2 and sp3 bonded carbon atoms. DLCfilm possesses some interesting properties, such ashigh hardness and Young's modulus, chemical inert-ness and low friction coefficient. The property andstructure of DLC film can be modified by addingsome metals. Ion implantation…     

Preparation of ion-track membranes of poly(p-phenylene terephthalamide): Control of pore shape by irradiation with different ion beams

The preparation of ion-track membranes of thermally stable poly(p-phenylene terephthalamide) (PPTA) was performed by ion beam irradiation followed by chemical etching with a sodium hypochlorite solution. Cylindrical pores were observed in the membrane irradiated with ¹⁹⁷Au and ²³⁸U ions at an energy of 11.1 MeV/n. In contrast, funnel shape pores appeared in the membrane irradiated with ⁸⁴Kr, ¹⁰²Ru and ¹²⁹Xe ion at energies of 6.2, 3.6 and 3.5 MeV/n, respectively. The ¹⁹⁷Au and ²³⁸U ion irradiation was found to exhibit more than four times larger sensitivity to the track etching under the same etching conditions. Consequently, the pore shape can be controlled by the masses and energies of the irradiated ions, in close relation to the etching sensitivity of the track.     

110keV56Fe^1^＋离子注入麦胚中的能量沉积分布

测量１１０ＫＥｖ５６Ｆｅ＾１＾＋离子注入麦胚中的射程为２５７．１ｎｍ。根据测得的＾５＾６Ｆｅ＾１＾＋离子相对浓度随深度的分布和注入离子的总面密度，求得了＾５＾６Ｆｅ＾１＾＋离子绝对浓度随深度的分布。采用ＴＲＩＭ８８程序计算得到了不同浓度上注入离子的阻止本领，从而求得了随深度的能量沉积分布。并讨论了细胞损伤的可能机理。     

Formation of amorphous carbon on the surface of poly(ethylene terephthalate) by helium plasma based ion implantation

The surface modification of poly(ethylene terephthalate) (PET) by helium plasma based ion implantation (He PBII) was studied. The effect of the main process parameters (acceleration voltage, fluence and fluence rate) on the alterations of the surface chemical composition and structure were investigated by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.According to SRIM calculations, at ion energies above 2 keV the stopping power of PET for He⁺ ions is dominated by the electronic component and the contribution of the nuclear component is relatively small. Degradation of the ester group and carbonisation were observed by XPS due to elimination of O-rich fragments. The total C-content of the modified layer increased with the increase of fluence rate and acceleration voltage of particles, enabling the purposeful alteration of the surface composition. A strong broadening was detected in the Raman spectrum between 1000 and 1700 cm⁻¹, testifying to the intense formation of amorphous carbon. The area ratio of the D (∼1410 cm⁻¹) to G (∼1570 cm⁻¹) band increased with the increase of particle fluence and the increase of acceleration voltage, offering the possibility of tailoring the chemical structure of the amorphous carbon layer created by the He PBII treatment.     

Energy deposition of y-ray in different instances and its influence on energy detection

In this paper, we simulate y-ray energy deposition for different incident energies with four different models using the tool GEANT4 ( Geant4.7.0, 2005 ) developed by CERN (the Center of European Research of Nucleus).The results we obtained indicate that there are different peak values for different incident energies. That is, we can differentiate the incident energy accurately if the detector can determine the peak value accurately. This is meaningful for the geometrical configuration of the detector to get the most probable distribution (MPD) of energy deposition for different incident energies. According to the simulation, we can insert certain slices with large absorption coefficient to obtain a better MPD of energy deposition which will not alter the shape of the energy deposition.     

低能离子注入过程中真空和注入对小麦过氧化物酶同工酶的影响

本文报道了真空处理和低能离子束注入处理对小麦过氧化物酶同工酶的影响。研究发现,经真空处理后的样品,其酶活随着培养时间的延长呈增加的趋势,与对照样保持一致;而且相同取样时间不同样品之间的酶活性随真空时间的延长呈现略为增加的趋势;各剂量的N^ 注入处理后,种子的发芽率未受影响,而剂量较大时种子的芽长增长速度受到了明显的抑制;低剂量处理能刺激过氧化物酶酶活升高,而较高剂量处理则使酶活降低。     

离子束诱变西瓜体细胞抗镰刀菌酸突变体研究

将通过能量为25keV、注量为6.24×1016/cm2的Ar+ 辐射处理后的三份西瓜种子接种在含有15mg / L镰刀菌酸(Fusaric acid,FA)的MS(Murashige, Skoog)培养基上获得无菌苗,以其子叶为外植体接种在MS+2mg/L 6-苄氨基嘌呤(Benzylaminopruine,BA)+15mg/L FA培养基上进行诱导生芽,将抗性再生芽转接到MS+0.2mg/L萘乙酸(Naphthylacetic acid,NAA)+15mg/L FA培养基上,进行抗FA的再生苗的生根诱导培养。结果表明,离子束辐射处理和FA对感病西瓜种子3-27和YH-5的发芽率及成苗都有显著抑制,两者的复合抑制作用更强;离子束辐射处理过的两个感病西瓜种子抗FA的芽诱导再生率和生根诱导率都高于对应的不经过离子束辐射处理的对照材料,提高幅度在材料之间、芽再生和根再生之间有差异。     

Energy deposition of γ-ray in different instances and its influence on energy detection

In this paper, we simulate γ-ray energy deposition for different incident energies with four different models using the tool GEANT4 （ Geant4.7.0, 2005 ） developed by CERN （the Center of European Research of Nucleus）. The results we obtained indicate that there are different peak values for different incident energies. That is, we can differentiate the incident energy accurately if the detector can determine the peak value accurately. This is meaningful for the geometrical configuration of the detector to get the most probable distribution （MPD） of energy deposition for different incident energies. According to the simulation, we can insert certain slices with large absorption coefficient to obtain a better MPD of energy deposition which will not alter the shape of the energy deposition.     

Effect of electron beam irradiation sterilization on the biomedical poly (octene-co-ethylene)/polypropylene films

The effect of electron beam irradiation with the dose ranging from 15 to 40 kGy on poly (octene-co-ethylene) (POE)/polypropylene (PP) films was investigated. Wide angle X-ray diffraction (WAXD), differential scanning calorimetry (DSC), Fourier transform infrared spectroscopy (FTIR), yellowness index testing and mechanical performance measurement were applied to characterize the films. It demonstrated that crystalline structure exhibited little change, and degree of crystallinity slightly change under the irradiation treatment. Irradiation brought about oxidation of the films, forming hydroxyl groups of the peroxides and carbonyl groups. Tensile properties become worse as irradiation dose increased. Electron beam irradiation with the dose of 15-40 kGy has little effect on crystalline performance and a little influence for the POE/PP films, indicating a good irradiation resistance.