Competition between ferromagnetic and anti-ferromagnetic couplings in Co doped ZnO with vacancies and Ga co-dopants

Spin-polarized first-principles electronic structure and total energy calculations have been performed to better understand the magnetic properties of Co doped ZnO (ZnO:Co) with vacancies and Ga co-dopants. The paramagnetic state of ZnO:Co, in which Co ions lose their magnetic moments, has been found to be unstable. The total energy results show that acceptor-like Zn vacancies and donor-like Ga co-dopants render the anti-ferromagnetic (AFM) and ferromagnetic (FM) states to be more favorable, respectively. With O vacancies, ZnO:Co has been found to be in the weak FM state. These magnetic properties can be understood by the calculated O- and Zn-vacancies and Ga co-dopant induced changes of the electronic structure, which suggest that AFM and FM Co-Co couplings are mediated by O 2p-Co majority (↑)-spin 3d hybridized states in the valence band of ZnO and O-vacancy-derived p states or Ga sp states in the ZnO band gap, respectively. For ZnO:Co with Zn vacancies (Ga co-dopants) the AFM (FM) coupling outweighs the FM (AFM) coupling and results in the AFM (FM) state, while for ZnO:Co with O vacancies, both the FM and AFM couplings are enhanced by similar degrees and result in the weak FM state. This study reveals a competition between FM and AFM couplings in ZnO:Co with vacancies and Ga co-dopants, the detailed balancing between which determines the magnetic properties of these materials.     

A first-principles study of ferromagnetism in Pd-doped ZnO

The electronic structures and magnetic properties of Pd-doped ZnO have been studied by the full-potential linear augmented plane wave (FLAPW) method using the generalized gradient approximation (GGA). We find that Pd-doped ZnO becomes 100% spin polarized when Pd substitutes for Zn in the 2×2×2 ZnO supercell. The supercell magnetic moment reaches 2.0μ_B. Long-range ferromagnetic (FM) coupling is obtained with all Pd dopant configurations, and a Curie temperature as high as 860 K is predicted for the ground-state configuration. The hybridized Pd(4d)-O(2p)-Zn(4d)-O(2p)-Pd(4d) chain formed through p-d-like coupling is responsible for the long-range room-temperature FM coupling. We discuss the effect of O vacancies or Zn vacancies on the magnetism as well.     

Theoretical study of Mn doping effects and O or Zn vacancies on the magnetic properties in wurtzite ZnO

The effects of including the exchange interaction (J) and Hubbard on-site Coulombic interaction (U) on the structural parameters and magnetic moment of Mn-doped ZnO were explored. The calculations were performed with the plane-wave pseudopotential method along with generalized-gradient approximations (GGA). Using the GGA+U + +J method by applying Hubbard corrections U_d to the Zn 3d states and U_p to the O 2p states, the lattice constants were calculated for various reported Hubbard parameters. The difference in the lattice constants between the calculated results and experimental measurements is within 1% for pure ZnO and pure MnO. This study considers three cases: (i) substitution of Mn for Zn, (ii) substitution of Mn for Zn combined with Zn vacancy, and (iii) substitution of Mn for Zn with O vacancy. Results are shown that the system is ferromagnetic (FM) when zinc vacancies are present. For three cases with oxygen vacancies, only one of them is FM. It was also found that the Hubbard U and exchange interaction J improved the calculated results, allowing it to exhibit good agreement properties for Mn-doped ZnO with the experimental data.     

Microstructural and magnetic properties of Ax:Zn1-xO (A=Mn,Gd and Mn/Gd) nanocrystals

We report the microstructural and magnetic properties of transition (3d) and rare earth (4f) metal substituted into the A_x:Zn_1?xO (A=Mn, Gd and Mn/Gd) nanocrystal samples synthesized by solgel method. The structural properties and morphology of all samples have been analysed using X-ray diffraction (XRD) method and scanning electron microscopy. The impurity phase in the XRD patterns for all samples is not seen, except (Mn/Gd):ZnO sample where a very weak secondary phase of Gd₂O₃ is observed. Due to the large mismatch of the ionic radii between Mn²⁺ and Gd³⁺ ions, the strain inside the matrix increases, unlike the crystallite size decreases with the substitution of Mn and Gd into ZnO system. A couple of additional vibration modes due to the dopant have been observed in Raman spectrum. The magnetic properties have been studied by vibrating sample magnetometer. The magnetic hysteresis shows that Mn:ZnO and Gd:ZnO have soft ferromagnetic (FM) behaviour, whereas (Mn/Gd):ZnO has strong FM behaviour at room temperature (RT). The enhancement of ferromagnetism (FM) in (Mn/Gd):ZnO sample might be related to short-range FM coupling between Mn²⁺ and Gd³⁺ ions via defects potential and/or strain-induced FM coupling due to the expansion lattice by doping. The experimental results indicate that RTFM can be achieved by co-substitution of 3d and 4f metals in ZnO which can be used in spintronics applications.     

Room temperature ferromagnetism in nanocrystalline Ni-doped ZnO synthesized by co-precipitation

Ni-doped ZnO powder was synthesized by thermal co-decomposition of a mixture of bis(acetylacetonato) zinc(II)hydrate and bis(dimethylglyoximato)nickel(II) complexes. The samples were characterised by X-ray diffraction (XRD), Energy dispersion X-ray fluorescence (EDXRF), and FT-IR spectroscopy. The atomic ratio Ni/Zn of the samples was determined by the EDXRF method to be 1%, 4.3%, 7.4% and 22.5 wt%. The XRD studies show the formation of nanocrystalline (14-18 nm) of Ni-doped ZnO along with nanoparticles of NiO. By magnetic measurements, it was observed that powder contains 1%Ni, 4.3%Ni, 7.4%Ni exhibits superparamagnetic behaviour while the sample of 22.5%Ni prepared in closed atmospheric environment shows clear ferromagnetic (FM) loop at room temperature due to the formation of solid solution Zn_1−xNi_xO.     

Ferromagnetism induced by oxygen-vacancy complex in (Mn,in) codoped ZnO

Mn doped Zinc oxide (ZnO) thin films were prepared by metal organic chemical vapor deposition (MOCVD) technique. Structural characterizations by X-ray diffraction technique (XRD) and photoluminescence (PL) indicate the crystal quality of ZnO films. PL and Raman show a large fraction of oxygen vacancies (V_O²⁺) are generated by vacuum annealed the film. The enhancement of ferromagnetism in post-annealed (Mn, In) codoped ZnO could result from V_O²⁺ incorporation. The effect of V_O²⁺ on the magnetic properties of (Mn, In) codoped ZnO has been studied by first-principles calculations. It is found that only In donor cannot induce ferromagnetism (FM) in Mn-doped ZnO. Besides, the presence of V_O²⁺ makes the Mn empty 3d-t_2g minority state broadened, and a t_2g-V_O²⁺ hybrid level at the conduction band minimum forms. The presence of V_O²⁺ can lead to strong ferromagnetic coupling with the nearest neighboring Mn cation by BMP model based on defects reveal that the ferromagnetic exchange is mediated by the donor impurity state, which mainly consists of Mn 3d electrons trapped in oxygen vacancies.     

Co和Cr掺杂对层状钙钛矿锰氧化物La1.2Sr1.8Mn2O7磁性的影响

研究了层状钙钛矿锰氧化物La_1.2Sr_1.8Mn₂O₇中Mn被Co和Cr替代对磁性能的影响.Co替代Mn后,长程铁磁序被破坏,铁磁性减弱,出现团簇玻璃态和自旋玻璃态,表明Co离子和Mn离子之间不存在双交换作用.而Mn被Cr替代后长程铁磁序仍然保持,证实Cr³⁺和Mn³⁺之间存在铁磁性交换作用. 关键词：     

Room temperature ferromagnetism behavior of Sn1−xMnxO2 powders

In this paper, we have investigated Mn-doped SnO₂ powder samples prepared by solid-state reaction method. X-ray diffraction showed a single phase polycrystalline rutile structure. The atomic content of Mn ranged from ∼0.8 to 5 at%. Room temperature M-H loops showed a ferromagnetic behavior for all samples. The ferromagnetic Sn_0.987Mn_0.013O₂ showed a coercivity H_c=545 Oe, which is among the highest reported for dilute magnetic semiconductors. The magnetic moment per Mn atom was estimated to be about 2.54 μ_B of the Sn_0.9921Mn_0.0079O₂ sample. The average magnetic moment per Mn atom sharply decreases with increasing Mn content, while the effective fraction of the Mn ions contributing to the magnetization decreases. The magnetic properties of the Sn_1−xMn_xO₂ are discussed based on the competition between the antiferromagnetic superexchange coupling and the F-center exchange coupling mechanism, in which both oxygen vacancies and magnetic ions are involved.     

The electronic and magnetic properties of （Mn,C）-codoped ZnO diluted magnetic semiconductor

The electronic and magnetic properties of (Mn,C)-codoped ZnO are studied in the Perdew-Burke-Ernzerhof form of generalized gradient approximation of the density functional theory. By investigating five geometrical configurations, we find that Mn doped ZnO exhibits anti-ferromagnetic or spin-glass behaviour, and there are no carriers to mediate the long range ferromagnetic (FM) interaction without acceptor co-doping. We observe that the FM interaction for (Mn,C)-codoped ZnO is due to the hybridization between C 2p and Mn 3d states, which is strong enough to lead to hole-mediated ferromagnetism at room temperature. Meanwhile, we demonstrate that ZnO co-doped with Mn and C has a stable FM ground state and show that the (Mn,C)-codoped ZnO is FM semiconductor with super-high Curie temperature (T C = 5475 K). These results are conducive to the design of dilute magnetic semiconductors with codopants for spintronics applications.     

Observation of mixed-phase behavior in the Mn-doped cobaltite La0.7Sr0.3Co1−xMnxO3 (x=0-0.5)

Studies on La_0.7Sr_0.3Co_1−xMn_xO₃ (x=0-0.5) compounds evidence that the interaction between Mn and Co ions in this system is antiferromagnetic super-exchange and not ferromagnetic (FM) double-exchange (DE). As a result, antiferromagnetism and magnetic glassiness develop steadily with increasing Mn content and the system becomes a spin glass at x∼0.1. Analyses of high-field magnetization data indicate that the system consists of two major phases: a metallic FM phase which magnetically saturates in rather low field, and an insulating non-FM phase which has a linear dependence of magnetization on magnetic field. In the low doping regime, the fraction of the non-FM component expands with temperature at the expense of the FM phase and becomes maximal at T_C. Ferromagnetism reappears in highly doped (x≥0.2) compounds due to the presence of DE interaction between the Mn ions. The small volume fraction of the FM phase derived from the M(H) data in high-field region supports the coexistence of insulating and FM behaviors in the highly doped samples.     

Magnetic dilution and electronic nature in La0.7Pb0.3Mn1−xZnxO3

We have studied the magnetic dilution and electronic nature of Zn doping on the Mn site in the colossal magnetoresistant material La_0.7Pb_0.3MnO₃ (x≤0.3). Small non-magnetic Zn²⁺ doping tends to separate the system into ferromagnetic clusters to weaken the long-range ferromagnetic order and to reduce the Curie temperature. The spin polarizability of the x=0–0.3 samples is estimated to be 0.97–1.00, indicating that the x=0–0.3 samples are the spin polarized materials in which the conductivity is dominated by single-spin charge carriers. Small doping (x≥0.1) induces the metal–insulator transition and destroys the metallic state with long-range ferromagnetic order.     

The effect of surfactants on the magnetic and optical properties of Co-doped SnO2 nanoparticles

A series of Co-doped SnO₂ nanoparticles have been synthesized by the co-precipitation route. Different amounts of surfactant have been used in order to study the effect of surfactants (CTAB) on the magnetic and optical properties. Structural analyses reveal that Co dopants are substituted into rutile SnO₂ nanoparticles without forming any secondary phase. The increase of the surfactant promotes the adsorption of organic molecules on the surfaces of nanoparticles. Meanwhile, both the ferromagnetism and the orange emission drop progressively. The dependence of ferromagnetic properties on the surfactant concentration could be explained based on the bound magnetic polaron, where the carriers are provided by oxygen vacancies. XANES spectra reveal that the electrons transfer from Co 3d bands to the surfactant ions. Such electron-transfer process suppresses the formation of oxygen vacancies and leads to the decline of the ferromagnetism and optical emission.     

Zn-catalyzed growth processes and ferromagnetism of Mn-doped ZnO nanorods on Si substrate

Well-aligned ZnO nanorods and Mn-doped ZnO nanorods are fabricated on Si (1 0 0) substrate according to the contribution of Zn metal catalysts. Scanning electron microscopy and high-resolution transmission electron microscopy images indicate that the influence of Zn catalyst on the properties of ZnO can be excluded and the growth of ZnO nanorods follows a vapor-liquid-solid and self-catalyzed model. Mn-doped ZnO nanorods show a typical room temperature ferromagnetic characteristic with a saturation magnetization (M_S) of 0.273μ_B/Mn. Cathodoluminescence suggests that the ferromagnetism of Mn-doped ZnO nanorods originates from the Mn²⁺-Mn²⁺ ferromagnetic coupling mediated by oxygen vacancies. This technique provides exciting prospect for the integration of next generation Si-technology-based ZnO spintronic devices.     

Ferromagnetism in laser ablated ZnO and Mn-doped ZnO thin films: A comparative study from magnetization and Hall effect measurements

Room temperature FM was observed in pristine ZnO thin films grown by pulsed laser deposition on Al₂O₃ substrates. It seems to originate from other defects but not oxygen vacancies. Magnetization of thinner films is much larger than that of the thicker films, indicating that defects are mostly located at the surface and/or the interface between the film and the substrate. Data on the Fe:ZnO and Mn:ZnO films show that a transition-metal doping does not play any essential role in introducing the magnetism into ZnO. In the case of Mn doping, the magnetic moment could be very slightly enhanced. Hall effect measurements reveal that an incorporation of Mn does not change the carrier type, but decreases the carrier concentration, and increases the Hall mobility, resulting in more resistive Mn:ZnO films. Since no anomalous Hall effect was observed, it is understood that the observed FM is not due to the interaction between the free-carrier and the Mn impurity.     

Theoretical study of the magnetic interaction of Cr-doped ZnO with and without vacancies

First-principles density-functional theory (DFT) calculations have been performed to study the magnetic properties of ZnO:Cr with and without vacancies. The results indicate that the doping of Cr in ZnO induces obvious spin polarization around the Fermi level and a total magnetic moment of 3.77μ_B. The ferromagnetism (FM) exchange interaction between Cr atoms is short-ranged and decreases with increasing Cr separation distance. It is suggested that the FM state is not stable with low concentration of Cr. The presence of O vacancies can make the half-metallic FM state of the system more stable, so that higher Curie temperature ferromagnetism may be expected. Nevertheless, Zn vacancies can result in the FM stability decreasing slightly. The calculated formation energy shows that V_Zn+Cr_Zn complex forms spontaneously under O-rich conditions. However, under Zn-rich conditions, the complex of V_O+Cr_Zn forms more easily. Thus, ZnO doped with Cr may exhibit a concentration of vacancies that influence the magnetic properties.     

Ferromagnetism in ZnO with（Mn,Li） codoping

First-principles calculations were performed to investigate the magnetic properties of Zn(Mn,Li)O based on the Perdew-Burke-Ernzerhof form of generalized gradient approximation. Antiferromagnetic (AFM) ordering is the ground state in Mn-doped ZnO system without the codopant of Li, while seven different geometrical configurations of Zn(Mn,Li)O prefer stable ferromagnetic (FM) ordering. We found that dopant Li can effectively change the magnetic coupling in the ZnMnO system. The Curie temperature (T_C) of FM ordering depends on the geometric configuration, and the highest T_C is about 1388 K. The FM stabilization is greatly affected by Mn-Mn distance rather than by the position of dopant Li. We propose that dopant Li mediates FM coupling through a double exchange interaction or an RKKY interaction when Li is located, respectively, near or far from Mn ions.     

Second-order phase transition with coexistence of short-range and long-range ferromagnetic interactions in Ba1.7La0.3FeMoO6 compound

In this work, the magnetic properties and critical behavior around ferromagnetic–paramagnetic (FM–PM) phase transition in Ba_1.7La_0.3FeMoO₆ compound have been investigated in detail. This compound exhibits a second-order magnetic phase transition with Curie temperature T_C = 345 K. The critical exponents β, γ, and δ that are determined by using the modified Arrott plots (MAP), the Kouvel–Fisher (KF) and the critical isotherm analysis agree very well. Our results indicate a coexistence of short-range and long-range ferromagnetic (FM) interactions in Ba_1.7La_0.3FeMoO₆ compound. The existence of long-range FM interactions in this compound can be associated with the crystal structure of materials with long-range Fe/Mo ordering parameter and strength of double-exchange interaction, whereas the existence of the short-range FM interactions can be explained by magnetic inhomogeneity and FM clusters.     

Ferro-and antiferromagnetic ordering in LaMnO3+δ

A neutron diffraction study of the crystalline structure and magnetic state of LaMnO_3+δ samples with different deviations from oxygen stoichiometry has been made at 4.2 K. It is shown that annealing at reduced oxygen pressure is accompanied by transformation of the magnetic structure from ferromagnetic, with magnetic moments parallel to the b axis, to antiferromagnetic, with the wave vector k=0 and the moments along the a axis (space group Pnma). A comparison of experimental with expected Mn ion moments suggests that magnetic order does not extend throughout the sample volume. Part of the Mn ions form magnetic clusters ～20 Å in size.     

A CASTEP study on magnetic properties of C-doped ZnO crystal

The CASTEP calculations based on the density function theory (DFT) have been carried out in studying magnetic properties of C-doped ZnO crystal. The long-range ferromagnetism (FM) can be attributed to coupling between C energy levels. We also investigate effects of oxygen vacancies and nitrogen impurities on FM properties. It is obvious that oxygen vacancies are unfavorable to stabilize the FM. However, nitrogen impurities can enhance FM coupling, which indicates that hole-carriers play a crucial role in the observed FM behavior. In addition, we also analyze strain effect on FM of C-doped ZnO.     

Defects induced ferromagnetism in Mn doped ZnO

Single phase Mn doped (2 at%) ZnO samples have been synthesized by the solid-state reaction technique. Before the final sintering at 500 °C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 h). The grain sizes of the samples are very close to each other (～32±4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 μ_B/Mn atom) was achieved for 96 h milled sample. Electrical resistivity has been found to increase with increase in milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choice of milling period and annealing conditions is required.