硅锗基区异质结双极型晶体管的研究进展

本文综述了SiGe-HBT工艺及性能研究的最新进展,提出了若干重要的研究课题.     

硅—锗异质合金及其在异质结双极晶体管中的应用

八十年代后期发展起来的硅-锗异质结构材料,得益于成熟的硅技术,正在取得令人鼓舞的成果。采用应变层外延技术,已经获得高质量的Ge_xSi_(1-x)/Si异质膜。这些材料已被应用于各种半导体器件的研究之中。异质结双极晶体管是硅-锗异质结构材料的一个典型应用领域。近期研究结果显示出硅-锗异质结双极晶体管(HBT)巨大的潜在优势和在超高频、超高速及低温应用领域的美好前景。本文考察了这种被称为第二代硅的新材料的生长技术及其在异质结双极晶体管中的应用,并简要介绍了国外在硅锗HBT研究方面的一些成果,展望了这种新型器件的发展前景。     

硅锗基区异质结双极晶体管的研究进展

叙述了硅锗基区异质结双极晶体管的研究发展现状，分析了该晶体管的结构机理，特点及制造技术，并且阐述了该器的发展前景。     

重离子成角度入射导致的锗硅异质结双极晶体管单粒子效应三维数值仿真

针对国产锗硅异质结双极晶体管(SiGe HBTs),采用TCAD仿真,建立SiGe HBT单粒子效应三维损伤模型,研究重离子成角度入射SiGe HBT时单粒子效应电荷收集的关键因素。选择几个典型入射位置和不同入射角度进行数值仿真,通过分析器件结构和仿真结构来研究电荷收集机制。结果表明,无论是离子入射位置如何,只要离子径迹穿过器件的灵敏体积,就会引起大量电荷收集。电荷收集量不仅与离子径迹在SiGe HBT敏感体积内的长度有关,同时也受到浅槽隔离以及离子径迹和电极之间的距离的影响。此项工作对SiGe HBT空间实际应用,并进一步提出加固方案提供了理论依据。     

高速锗硅异质结双极晶体管HICUM可缩放模型

介绍了一种基于HICUM模型建立高速锗硅异质结双极可缩放模型的流程,结合一批不同物理设计尺寸晶体管的测试数据,建立了HICUM模型参数缩放数学方程.建立的可缩放模型在商用仿真器中进行了仿真验证,模型仿真结果与测试数据有很好的吻合.     

硅异质结和赝异质结双极器件研究进展

本文作者结合自己的工作，综述了硅异质结和赝异质结双极器件的研究进展，指出ＧｅＳｉ ＨＢＴ将成为双极结构的主流技术，硅赝异质结器件也将在低温应用等方面显示出优势。     

非外延集电区的超高压锗硅异质结双极晶体管

介绍了在0.18 μm逻辑工艺平台上全新设计的超高压锗硅异质结双极晶体管(SiGe HBT),该器件改变了外延的一维纵向集电区,而采用了通过离子注入掺杂的“L形”二维集电区结构,集电区包括本征基区下方的纵向集电区和场氧底部横向集电区.该器件可在同一工艺中通过版图中横向集电区长度的变化实现不同的击穿电压,因此可制作超高压...     

双极晶体管高温辐照的剂量率效应研究

文章对一种具有低剂量率辐射损伤增强效应的国产双极晶体管进行了不同剂量率、不同温度下的电离辐照试验。结果表明，室温辐照条件下，该双极器件在较高剂量率下的辐射损伤没有显著区别，但在低剂量率辐照下，辐射损伤明显增加；而在高温辐照条件下，即使辐照剂量率较高，其辐射损伤也有显著的差异。最后，讨论了这种效应可能的内在机制。     

Analytical modelling of current gain and frequency characteristics under high injection levels in Si/SiGe heterojunction bipolar transistors at 77 and 300 K

This paper reports an analytical modelling of current gain and frequency characteristics in Si/SiGe heterojunction bipolar transistors (HBTs) at 77 and 300 K. Important transistor parameters, such as current gain, transconductance, cutoff frequency and maximum oscillation frequency are calculated as a function of Ge concentration in the base under different injection levels. The main physical mechanisms for the current and cutoff frequency rolloff at high injection levels are also analyzed. It shows that the high-level injection effect is more pronounced in the SiGe HBTs as a result of the increasing minority carrier concentration in the base and the Ge concentration and distribution will have a decisive influence of device performance. The results may provide a basis for the design of low temperature operation SiGe HBTs.     

Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors

We demonstrate peak f_T and f_max of 50 GHz for heterojunction bipolar transistors (HBTs) with an oxygen concentration in the epitaxial SiGe base layer of about 10²⁰ cm⁻³. These f_T/f_max values are over 10 GHz higher than for identically processed HBTs with an O content of only 10¹⁸ cm⁻³. This is due to reduced transient enhanced diffusion of boron in the O-rich layers. However, the base carrier lifetimes are reduced by the high oxygen content. We show that ideal base current characteristics and a low 1/fnoise level can be obtained despite this effect by localizing the emitter-base space-charge region outside the O-rich layer.     

3-D simulation of angled strike heavy-ion induced charge collection in silicon–germanium heterojunction bipolar transistors

This paper presents 3-D simulation of angled strike heavy-ion induced charge collection in domestic silicon-germanium heterojunction bipolar transistors （SiGe HBTs）. 3D damaged model of SiGe HBTs single-event effects （SEE） is built by TCAD simulation tools to research ions angled strike dependence. We select several different strike angles at variously typical ions strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Charge collection induced by angled strike ions presents a complex situation. Whether the location of device ions enters, as long as ions track through the sensitive volume, it will cause vast charge collection. The amount of charge collection of SiGe HBT is not only related to length of ions track in sensitive volume, but also influenced by STI and distance between ions track and electrodes. The simulation model is useful to research the practical applications of SiGe HBTs in space, and provides a theoretical basis for the further radiation hardening.