The defect structure of AlGaN/GaN superlattices grown on sapphire by the MOCVD method

High-resolution x-ray diffractometry and electron microscopy are used to study the defect structure and relaxation mechanism of elastic stresses in AlGaN/GaN superlattices grown by the MOCVD method on sapphire covered with a preliminarily deposited GaN and AlGaN buffer layer. Based on an analysis of the half-widths of three-crystal scan modes of x-ray reflections measured in different diffraction geometries, the density of different dislocation families is determined. For all the dislocation families, the density is shown to increase with the Al concentration in the solid-solution layers and depend only weakly on the superlattice period. From the electron-microscopic patterns of planar and cross sections, the types of dislocations and their distribution in depth are determined. It is shown that, in addition to high-density vertical edge and screw dislocations, which nucleate in the buffer layer and propagate through the superlattice layers, there are sloped intergrowing dislocations with a large horizontal projection and bent mixed dislocations with a Burgers vector $\left\langle {11\overline 2 3} \right\rangle $ at the interface between individual superlattice layers. The former dislocations form at the interface between the buffer layer and the superlattice and remove misfit stresses between the buffer and the superlattice as a whole, and the latter dislocations favor partial relaxation of stresses between individual superlattice layers. In samples with a high Al concentration (greater than 0.4) in AlGaN layers, there are cracks surrounded by high-density chaotic horizontal dislocations.     

Si(111)衬底上生长有多缓冲层的六方GaN晶格常数计算和应变分析

利用卢瑟福背散射/沟道技术和高分辨率X射线衍射技术对在Si(111)衬底上利用金属有机化合物气相外延技术(MOVPE)生长有多缓冲层的六方GaN外延膜进行结晶品质计算、晶格常数计算和应变分析. 实验结果表明：GaN外延膜的结晶品质为χ_min=1.54%，已达到完美晶体的结晶品质(χ_min=1%—2%)；GaN外延膜的水平方向和垂直方向晶格常数分别为：a_epi＝0.31903nm，c_epi=0.51837nm，基本达到G 关键词： GaN 高分辨X射线衍射 卢瑟福背散射/沟道 弹性应变     

Polar propagating optical phonon states and their dispersive spectra in wurtzite nitride superlattices: Quantum size effect

The polar optical phonon states of propagating (PR) modes in wurtzite GaN/Al_xGa_1−xN superlattices (SLs) are investigated within the dielectric continuum model framework. It is proved that the PR phonon modes only appear in wurtzite GaN/Al_xGa_1−xN SL with a small x$x$ Al mole ratio concentration (such as x<0.34$x<0.34$). The analytical phonon states of PR modes and their dispersive equation in the wurtzite GaN/Al_xGa_1−xN SL structures are obtained. Numerical calculations on the dispersive spectra of PR modes and their electrostatic potential properties as well as the quantum size effect are performed for a wurtzite GaN/Al_0.15Ga_0.85N SL. Results reveal that dispersive curves of PR modes in SLs form frequency bands. As the well width of GaN well-layer increases, the frequency bands of PR modes become steeper and narrower. The discussion of electrostatic potentials shows that the wavelength of PR phonon modes with a phase qL=π$qL=\pi$ (0) is 2L$2L$ (L$L$). With the increase of the SL well width, the wave-node number of the PR phonon modes in the barrier regions increases. The present theoretical scheme and numerical results are quite useful for analyzing the dispersive spectra of PR phonon modes and their polaronic effect in wurtzite GaN/AlGaN SL structures.     

On the role of secondary extinction in the measurement of the integrated intensity of X-ray diffraction peaks and in the determination of the thickness of damaged epitaxial layers

The integrated intensity of X-ray diffraction reflections has been measured for a series of epitaxial layers of AIII nitrides (GaN, AlN, AlGaN) grown on different substrates (sapphire, SiC) and characterized by different degrees of structural perfection. It has been shown that, despite a high density of dislocations and a significant broadening of the diffraction peaks, the obtained values are not described by the kinematic theory of X-ray diffraction and suggest the existence of extinction. The results have been analyzed on the basis of the Darwin and Zachariasen extinction models. The secondary extinction coefficients and the thicknesses of epitaxial layers have been determined using two orders of reflection both in the Bragg geometry (0002 and 0004) and in the Laue geometry (\(10\bar 10\)) and \(10\bar 20\)). It has been demonstrated that the secondary extinction coefficient is the greater, the smaller is the broadening of the diffraction peaks and, consequently, the dislocation density. It has been found that, for epitaxial layers with a regular system of threading dislocations, the secondary extinction coefficient for the Laue reflections is substantially greater than that for the Bragg reflections.     

Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers respectively. High resolution XRD (HRXRD) peaks show FWHM of 272 and 296 arcsec for the (0 0 0 2) plane of GaN and GaN in GaN/AlGaN respectively. For GaN buffer layer, the Hall mobility is 346 cm²/V-s and carrier concentration is 4.5 × 10¹⁶/cm³. AFM studies on GaN buffer layer show a dislocation density of 2 × 10⁸/cm² by wet etching in hot phosphoric acid. The refractive indices of GaN buffer layer on sapphire at 633 nm are 2.3544 and 2.1515 for TE and TM modes respectively.     

Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures

The dependence of two-dimensional electron gas (2DEG) density and distribution in an Al_xGa_1-xN/AlN/GaN heterostructure on the thicknesses of the Al_xGa_1-xN barrier layer and the AlN interfacial layer are investigated theoretically. A competitive contribution of the AlGaN and AlN layers to the 2DEG density is revealed. For an AlN interfacial layer thinner than a critical value d_cAlN, the 2DEG density is dominated by the AlGaN barrier and the 2DEG density increases with the increase of the AlGaN barrier thickness, as in the case of a simple AlGaN/GaN heterostructure. While the AlN interfacial layer will take the dominant contribution to the 2DEG density as its thickness exceeds d_cAlN. In this case, the increase of AlGaN barrier layer thickness leads to the decrease of the 2DEG density. Detailed calculations show that the critical AlN thickness increases with the increase of Al content in the AlGaN barrier. PACS 85.30.De; 73.40.Kp; 02.60.Cb     

Anisotropy of elastic strains and specific features of the defect structure of <Emphasis Type="Italic">a</Emphasis>-plane GaN epitaxial films grown on <Emphasis Type="Italic">r</Emphasis>-plane sapphire

The structural state of GaN epitaxial layers grown on r-plane sapphire through metal-organic vapor phase epitaxy has been investigated using X-ray diffraction. The interplanar spacings in two directions in the (11$ \bar 2 $ \bar 2 0) plane of the interface and in the direction perpendicular to it, as well as the diffraction peaks in the ϑ and ϑ-2ϑ scan modes in the Bragg and Laue geometries, are measured on double- and triple-crystal diffractometers. The intensity distribution maps for asymmetric Bragg reflections are constructed for two azimuthal positions of the sample. An analysis of the data obtained has demonstrated that the elastic strain is anisotropic and that the X-ray diffraction pattern parallel to the interface plane is broadened. The layers are contracted in the [1$ \bar 1 $ \bar 1 00] direction and unstrained in the [0001] direction. The broadening of the Bragg reflections in the [1$ \bar 1 $ \bar 1 00] direction is considerably larger than that in the [0001] direction. It is shown using the Williamson-Hall plots for the Bragg and Laue reflections that these broadenings are not related to different degrees of mosaicity but are determined by the local dilatations and misorientations around defects. The data obtained are analyzed, and the conclusions regarding the dislocation structure of the samples are drawn.     

X-ray measurement of a microdistortion tensor and its application in an analysis of the dislocation structure of thick GaN layers obtained by hydrochloride gaseous-phase epitaxy

The method of two-and three-crystal x-ray diffractometry (TCD) is used for studying the dislocation structure of thick GaN layers grown by chloride gaseous-phase epitaxy (CGE) on sapphire, as well as on a thin GaN layer, which is grown by the metalloorganic synthesis (MOS) method. Five components of the microdistortion tensor 〈?_ij〉 and the sizes of the coherent scattering regions along the sample surface and along the normal to it are obtained from the measurements of diffracted intensity in the Bragg and Laue geometries. These quantities are used to analyze the type and geometry of the dislocation arrangement and to calculate the density of the main types of dislocations. The density of the vertical screw dislocations, as well as of the edge dislocations, decreases (by a factor of 1.5 to 3) during growth on a thin GaN layer. The diffraction parameters of the thick layer on the MOS-GaN substrate suggest that it has a monocrystalline structure with inclusions of microcrystalline regions.     

The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures

In this paper we present a study of the effect of GaN capping layer thickness on the two-dimensional (2D)-electron mobility and the two-dimensional electron gas (2DEG) sheet density which is formed near the AlGaN barrier/buffer GaN layer. This study is undertaken using a fully numerical calculation for GaN/Al_xGa_1−xN/GaN heterostructures with different Al mole fraction in the Al_xGa_1−xN barrier, and for various values of barrier layer thickness. The results of our analysis clearly indicate that increasing the GaN capping layer thickness leads to a decrease in the 2DEG density. Furthermore, it is found that the room-temperature 2D-electron mobility reaches a maximum value of approximately 1.8×10³ cm² /Vs⁻¹ for GaN capping layer thickness grater than 100 Å with an Al_0.32Ga_0.68N barrier layer of 200 Å thick. In contrast, for same structure, the 2DEG density decreases monotonically with GaN capping layer thickness, and eventually saturates at approximately 6×10¹² cm⁻² for capping layer thickness greater than 500 Å. A comparison between our calculated results with published experimental data is shown to be in good agreement for GaN capping layers up to 500 Å thickness.     

Strain modification of AlGaN layers using swift heavy ions

Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×10¹² ions/cm². The samples used in this study are 50 nm Al_0.2Ga_0.8N/1 nm AlN/1 μ m GaN/0.1 μ m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E ^1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E ^1/2 graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail.     

GaN基异质结缓冲层漏电分析

通过对GaN基异质结材料C-V特性中耗尽电容的比较,得出AlGaN/GaN异质结缓冲层漏电与成核层的关系.实验结果表明,基于蓝宝石衬底低温GaN成核层和SiC衬底高温AlN成核层的异质结材料比基于蓝宝石衬底低温AlN成核层异质结材料漏电小、背景载流子浓度低.深入分析发现,基于薄成核层的异质结材料在近衬底的GaN缓冲层中具有高浓度的n型GaN导电层,而基于厚成核层的异质结材料的GaN缓冲层则呈高阻特性.GaN缓冲层中的n型导电层是导致器件漏电主要因素之一,适当提高成核层的质量和厚度可有效降低GaN缓冲层的背景载流子浓度,提高GaN缓冲层的高阻特性,抑制缓冲层漏电. 关键词： AlGaN/GaN异质结 GaN缓冲层 漏电 成核层     

Self-consistent inhomogeneity of quantum wells in II–VI semiconductors

An X-ray diffraction method that uses a slightly diverging (3′) beam and maximally attainable diffraction angles ? _B (as large as 77°) was developed to study quantum wells (QWs) with widths of 5–8 nm separated by wide (100–220 nm) barrier layers. The advantage of this method compared to the use of a parallel beam is an increase by two orders of magnitude in the intensity of the beam incident on the sample and an increase in the probability of diffraction for all QWs as a unified single crystal. It is found that the growth on GaAs substrates misoriented by 10° from the (001) plane in the [111]_II direction brings about monoclinization of crystal lattices of the QW layers and barrier layers in opposite directions. Inhomogeneity of composition over the thickness of each well is observed. In the case of growth of a ZnSe/ZnMgSSe structure in which the layers have a crystal-lattice period close to the lattice period of the GaAs substrate, the QWs are inhomogeneously doped with elements from the composition of the barrier layers. The inhomogeneity of QW composition observed in the growth of mismatched layers in ZnCdSe/ZnSSe and ZnCdS/ZnSSe structures is caused by the fact that mismatch between the lattice parameters of QWs and barriers stimulates the growth of self-consistent compositions; this occurs due to a decrease in the Cd concentration in the Zn_1?x Cd _x Se QW in the initial stages of growth compared to the Cd concentration in the flow of gases and an increase in the Zn concentration in the Cd_1?x Zn _x S QW at small values of x up to the concentration matching GaAs (x = 0.4). The mismatch stresses are partially relaxed via dislocations with the (111)_II glide planes, as a result of which is observed the combination of rotation of the crystal planes of the layers and QW around the [1\(\overline 1 \)0] axis and almost cylindrical bending of the entire sample around the perpendicular [110] axis. Mismatch between lattice parameters of the ZnMgSSe barrier layers and the substrate brings about decomposition of these layers into two phases; this decomposition is caused by thermodynamic instability of the alloy.     

高温AlN插入层对AlGaN/GaN异质结材料和HEMTs器件电学特性的影响

研究了在GaN缓冲层中插入40 nm厚高温AlN层的GaN外延层和AlGaN/GaN异质结材料, AlN插入层可以增加GaN层的面内压应力并提高AlGaN/GaN高电子迁移率晶体管（HEMTs）的电学特性. 在精确测量布拉格衍射角的基础上定量计算了压应力的大小. 增加的压应力一方面通过增强GaN层的压电极化电场, 提高了AlGaN/GaN异质结二维电子气（2DEG）面密度, 另一方面使AlGaN势垒层对2DEG面密度产生的两方面影响相互抵消. 同时, 这种AlN插入层的采用降低了GaN与AlGaN层之间的 关键词： 高温AlN插入层 AlGaN/GaN异质结 二维电子气 应力     

The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates

AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type Al_0.15Ga_0.85N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×10⁹?cm^?2 without AlN IL to the maximum of 1×10¹⁰?cm^?2 at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type Al _x Ga_1?x N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70?meV with a?10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs.     

On the type of superlattices in leadtintelluride system

It is predicted in the PbTePb_1?xSn_xTe superlattice (SL) that the bottom of the quantum well is situated at the PbTe layer in n-type specimens and the top at the Pb_1?xSn_xTe layer in p-type ones for x<0.23, and for x>0.23, SLs are of type II. These predictions are based upon an experimental tin concentration dependence of the band edge energies relative to the Fermi level pinned by amphoteric indium impurities in bulk Pb_1?xSn_xTe. In n-type PbTePb_0.8Sn_0.2Te SL, cyclotron resonances together with Hall coefficient and Shubnikov de Haas (SdH) oscillation experiments support the existence of the PbTe wells. The results of submillimeter cyclotron resonances for n-type PbSe_0.08Te_0.92Pb_0.8Sn_0.2Te and PbSePb_0.88Sn_0.12Se SLs are also presented.     

Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

We investigate the structural and electrical properties of Al_xIn_1–xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested Al_xIn_1?xN/AlN/GaN/Al_0.04Ga_0.96N heterostructures when compared to the standard Al_xIn_1–xN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al_0.04Ga_0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the Al_xIn_1?xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible.     

Raman scattering by folded acoustic phonons in InGaN/GaN superlattices

We use Raman scattering to investigate the folded longitudinal acoustic (LA) phonons in a series of In_xGa_1−xN/GaN superlattices (SLs) grown by molecular beam epitaxy with different compositions (15% < x < 38%) and SL periods (from 8 to 20 nm). A novel, ultralow wavenumber filtering module, which provides access to ultralow wavenumber Raman modes on single‐grating spectrometers, has been used to perform the Raman measurements. Zone‐folding effects are observed, and the wavenumber behavior of the folded LA modes is well reproduced with a linear dispersion for the folded LA modes as predicted by elastic continuum theory. We employ the wavenumber of the doublets to evaluate the period of the SLs. Copyright © 2011 John Wiley & Sons, Ltd.     

Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers

The effect of the indium (In) composition of In_xGa_1−xN (GaN) waveguide layers on the performance of deep violet In_0.082Ga_0.918N/GaN double quantum well (DQW) laser diodes (LDs) emitting at 390 nm output emission wavelength has been numerically investigated. Simulation results indicated that by increasing In composition of the In_xGa_1−xN waveguide layers, the threshold current decreases, the slope efficiency, and differential quantum efficiency (DQE) increase, whereas the output power decreases. The increase in the In composition of the InGaN waveguide layers increases the refractive index and consequently increases the optical confinement factor (OCF) which result in the increase in the slope efficiency and DQE and the decrease in the threshold current. The decreasing movement of electron and hole carriers from the bulk waveguide layers to the active regions also causes to decrease the output power. A new LD structure with InGaN/GaN superlattice (SL) waveguide layers has been proposed to exploit the increased OCF of InGaN waveguide structures, and the enhanced electron and hole mobilities and the tunneling effect of the periodic structure of the SL structures. The results also showed that the use of InGaN/GaN SL waveguide structures effectively improves the output power, slope efficiency and DQE and decreases the threshold current of the LD compared with (In)GaN bulk waveguide structure.     

Electrical conductivity and thermopower in Co<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript> S sulfides

This paper reports on the results of investigations into the structural, electrical, and thermoelectrical properties of sulfides Co _x Mn_{1 ? x} S (0 ≤ x ≤ 0.4) in the temperature range 80–950 K. It is established that the thermopower coefficient α decreases significantly with an increase in the cobalt concentration in the lattice of the α-MnS compound. The Co _x Mn_{1 ? x} S compounds with cobalt concentrations in the range 0 ≤ x ≤ 0.3 are semiconductors with hole conduction (α > 0), whereas the compound with x = 0.4 exhibits metallic conduction (α < 0). It is found that the band gap E _g of the compounds under investigation varies in the range from 1.46 eV for α-MnS (x = 0) to 0.26 eV for Co _x Mn_{1 ? x} S (x = 0.4).     

Suppression of superconductivity in layered Bi<Subscript>4</Subscript>O<Subscript>4</Subscript>S<Subscript>3</Subscript> by Ag doping

We report X-ray diffraction, magnetization and transport measurements for polycrystalline samples of the new layered superconductor Bi_4?x Ag _x O₄S₃(0 ≤ x ≤ 0.2). The superconducting transition temperature (T _C) decreases gradually and finally suppressed when x < 0.10. Accordingly, the resistivity changes from a metallic behavior for x < 0.1 to a semiconductor-like behavior for x > 0.1. The analysis of Seebeck coefficient shows there are two types of electron-like carriers dominate at different temperature regions, indicative of a multiband effect responsible for the transport properties. The suppression of superconductivity and the increased resistivity can be attributed to a shift of the Fermi level to the lower-energy side upon doping, which reduces the density of states at E _F. Further, our result indicates the superconductivity in Bi₄O₄S₃ is intrinsic and the dopant Ag prefers to enter the BiS₂ layers, which may essentially modify the electronic structure.