SrTiO3掺杂La-K-Mn-O系统的电磁性质

用溶胶-凝胶制备了La0.833K0.167MnO3-SrTiO3(LKMO/STO)系列样品,并研究了它们的结构、磁性和输运特性.X射线衍射实验表明,1200℃烧结的LKMO/STO(STLK12)是一个均匀的固溶相.其电阻率表现为绝缘体的行为,而纯La0.833K0.167MnO3(LKMO)样品随温度的升高则有金属-绝缘体转变.在低场下(μ0H=0.02 T),对STLK12样品,当温度从220 K降低到4 K时,磁电阻从0.2%升高到11%.在高场下(μ0H=5.5 T),随着温度降低,磁电阻几乎是线性增大.在4.2 K时,达到65%.比纯LKMO样品40%的磁电阻高出了25%.我们用晶界处的自旋极化隧穿效应定性地解释了这种增强的磁电阻效应.     

Ag掺杂La-K-Mn-O非均匀多晶体系的电磁性质

用溶胶-凝胶方法制备了1/mAg₂O-La_0.833K_0.167MnO₃ (LKMO/Ag)系列样品，其中1/m代表Ag₂O和La_0.833K_0.167MnO₃(LKMO)的摩尔比，m=32，16，8，4和2. 研究了此系列样品的结构、磁性和输运特性. X射线衍射实验表明，LKMO/Ag是一个非均匀的系统，样品由磁性的钙钛矿相LKMO和金属Ag相组成. 由于Ag相的加入，在室温条件下，磁电阻效应明显增强. 在300 K, 0.5 T磁场下，m=4样品的磁电阻可以达到32%；5.5 T磁场下，其磁电阻可达64%. 而单纯的LKMO样品在相同条件下的磁电阻分别为10%和35%. 在低温下，加Ag样品的磁电阻效应反而减小，样品含Ag越多，磁电阻效应越小. 用非本征磁电阻(包括自旋极化隧穿和自旋相关散射)和本征磁电阻在不同温区对总磁电阻的相对贡献对此系列样品的磁电阻现象作了定性的解释. 关键词： 自旋极化隧穿 自旋相关散射 低场磁电阻 高场磁电阻     

La0.67Sr0.08Na0.25MnO3的奇特输运性质及CMR效应

用固相反应法制备了La_0.67Sr_0.08Na_0.25MnO₃样品.通过磁化强度-温度(M-T)曲线、电阻率-温度(ρ-T)曲线以及ρ-T拟合曲线研究了样品的输运性质及庞磁电阻(colossal magnetoresistance，CMR)效应.结果表明，ρ-T曲线和磁电阻-温度(MR-T)曲线均出现双峰现象；高温峰是伴随顺磁-铁磁(PM-FM)相变出现绝缘体-金属(I-M)相变，低温峰是颗粒界面效应；两个绝缘相输运机理不同：较低温度下(248K<T<274K)，ρ(T)符合极化子的可变程跃迁模型，而在更高温区(330K<T<374K)，ρ(T)符合极化子近邻跃迁模型；两个类金属相输运机理也不同：在低温区(67K<T<186K)，满足ρ-T^2.5关系，输运机理是自旋波散射和电-磁子散射作用，而在高温区(292K<T<304K)，满足ρ-T²关系，输运机理是单磁子散射作用. 关键词： 庞磁电阻 金属-绝缘体转变 晶界效应 输运行为     

Spin-Polarized Tunnelling Magnetoresistance Effects in La0.833K0.167MnO3／SrTiO3 Polycrystalline Perovskite Manganites

A sample of La0.833K0.167MnO3-SrTiO3 (LKMO/STO) is fabricated by the sol-gel method. The microstructure,magnetic and transportation properties have been studied. X-ray diffraction patterns indicate that the structure of LKMO/STO is a homogeneous solid solution phase. The resistivity of LKMO/STO shows the insulator behaviour, which is different from La0.833K0.167MnO3 (LKMO) whose resistivity shows metal-insulator transition with decreasing temperature. The low-field (moH = 0.02 T) magnetoresistance decreases from 11% to 0.2% with the increasing temperature from 4 K‘to 220K for the LKMO/STO sample. The magnitude of magnetoresistance in a strong field (μoH = 5.5 T) almost increases linearly with decreasing temperature and reaches the maximum of 65% at the low temperature of 4.2K, which is much higher than that oE LKMO (40%). The enhanced low-field magnetoresistance effects are quantitatively explained by the spin-polarized tunnelling at grain boundaries.     

共沉淀法制备纳米多晶La2／3Sr1／3MnO3及其低场磁电阻性质

利用共沉淀法制备了纳米多晶La2/3Sr1/3MnO3粉体,并研究了相应烧结陶瓷的相结构、显微形貌、电性质以及磁电阻效应.样品中存在高密的晶界,对电子的疏运过程产生明显的散射作用,从而使得样品具有较大的电阻值,并且只有当烧结温度大于800℃时才出现金属绝缘体温度相变.样品的磁电阻是低场磁电阻效应,源于晶界处电子的自旋极化隧穿.烧结温度越低的样品,其磁电阻越大.     

Mn的价态对La0.8Ba0.2MnO3电磁性能的影响

在2—390K温度之间研究了La_0.8Ba_0.2MnO₃的 磁矩、磁电阻与温度的关系.发 现以不同价态的Mn元素引入得到的La_0.8Ba_0．2MnO₃ ，性能虽然都存在金属 —绝缘体转变，以及在磁场作用下居里温度附近电阻率变化非常显著的特点，但是价态对磁 性转变温度T_C，金属—绝缘体转变温度T_mi，以及磁电阻极大 值温度T_MR的影 响都非常显著.三种价态相比较，使用二价Mn的电阻率最低以及磁性转变温度更接近室温.认 为影响材料性能的主要因素是材料制备时引进的Mn元素的价态，由于原料价态的不同而形成 的氧空位浓度变化，进而影响了Mn⁴⁺/Mn³⁺的比. 关键词： 价态 磁电阻 居里温度 金属—绝缘体转变     

La2/3Ca1/3MnO3/Eu2CuO4/La2/3Ca1/3MnO3磁性隧道结的制备与表征

采用磁控溅射，紫外线光刻和离子束刻蚀制备了La_2/3Ca_1/3MnO₃/Eu₂CuO₄/La_2/3Ca_1/3MnO₃磁性隧道结.通过对获得的磁性隧道结的I-V特性测量，发现非线性的I-V特性，显示结样品的隧穿特性.有趣的是发现在电极材料La_2/3Ca_1/3MnO₃的金属-绝缘体转变温度(Tp)以下，I-V曲线出现一个跳变.随着温度降低，开始出现跳变的临界电流增大，但是跳变都发生在同样的电压下～209mV.当电流增大或减小在跳变点附近出现回滞.这一跳变只发生在铁磁金属态，表明这是一个磁性相关联的效应，可能对应一种新的磁性开关过程.虽然，目前对这一现象背后的物理机理还不清楚，但是，这一现象有可能在未来自旋电子学器件方面具有潜在的应用价值. 关键词： 庞磁电阻 磁性隧道结 开关效应     

Co掺杂对铁磁金属La0.8Sr0.2MnO3磁电阻影响机理

通过对La_0.8Sr_0.2Mn_1-yCo_yO₃(y≤02)饱和磁矩和输运的测量,研究了Co对La_0.8Sr_0.2MnO₃的磁电阻影响机制.结果表明,在La_0.8Sr_0.2Mn_1-yCo_yO₃（y≤02）中Co³⁺离子是低自旋态.由于Mn³⁺—O—Co³⁺—O—Mn³⁺类型的磁交换与Mn³⁺-Mn⁴⁺离子间双交换作用相比较弱,Curie温度T_C附近的磁电阻随着Co掺杂量的增加而降低.与此相反,由于Co²⁺离子与e_g巡游电子的反铁磁交换耦合作用,低温区间的磁电阻随着Co掺杂量的增加而升高. 关键词： 低自旋 磁电阻 磁交换作用     

La0.67Ba0.33MnO3薄膜的激光辐照效应研究

利用脉冲激光沉积技术在LaAlO₃（00l）单晶衬底上制备了La_067Ba_033MnO₃薄膜,研究了CO₂激光辐照对La_067Ba_033MnO₃薄膜的微结构和磁电性能的影响.结果表明,经激光辐照后,La_067Ba_033MnO₃薄膜的结晶性增强,薄膜应变减小;薄膜表面形貌由“岛状”结构变为“平原"结构,且粗糙度大大降低;同时,薄膜的饱和磁化强度、铁磁居里温度、金属—绝缘态转变温度和磁电阻增大,而矫顽场和电阻率减小.根据对传统退火效应的分析和理论计算,认为激光辐照导致的表面微结构的变化以及薄膜的氧含量和均匀性的提高对La_067Ba_033MnO₃薄膜的磁电性能的改善与优化密切相关. 关键词： 庞磁电阻 激光辐照 脉冲激光溅射沉积     

相分离Nd0.5Ca0.5MnO3体系的再入型自旋玻璃行为和电荷有序

研究了Nd_0.5Ca_0.5MnO₃体系的结构和输运特性. 结构 分析表明，在300K下，体系表现为O′型正交结构并存在典型的Jahn-Teller畸变.在8 T磁场 下，体系出现顺磁绝缘-铁磁金属的转变，庞磁电阻效应发生. 磁测量发现，样品的奈尔温 度T_N和电荷有序转变温度T_CO分别在150和240K左右，在41K左右出 现典型再入型自旋玻璃行为，同时观察到了负的磁化率异常. 结果表明，Nd关键词： 庞磁电阻 自旋玻璃态 负磁化强度 电荷有序     

Anomalous transport effects for the metal and insulator doped La0.833K0.167MnO3 systems

The La_0.833K_0.167MnO₃:Ag₂O and the La_0.833K_0.167MnO₃:SrTiO₃ samples are fabricated by the sol–gel method. The microstructure, magnetic and transportation properties have been systematically studied. X-ray diffraction patterns show that the La_0.833K_0.167MnO₃:Ag₂O (abbreviated as LKMO/Ag) sample is a two-phase composite and consists of a magnetic La_0.833K_0.167MnO₃ (abbreviated as LKMO) perovskite phase and a nonmagnetic Ag metal phase, while the structure of the La_0.833K_0.167MnO₃:SrTiO₃ (abbreviated as LKMO/STO) sample is a homogeneous solid solution phase. Comparing with the pure LKMO sample, the room temperature magnetoresistance (MR) effect for the LKMO/Ag sample is enhanced significantly due to the addition of Ag metal. The MR ratio increases from ∼25% for the pure LKMO sample to 65% for the LKMO/Ag sample under a higher field of 5.5 T at 300 K. For the LKMO/STO sample, however, the room temperature MR effect is weakened dramatically and is almost close to zero due to the addition of SrTiO₃ insulator. In the low temperature regime below the Curie temperature, the MR behaviors are different from that of the room temperature; that is, the MR effect is decreased for the LKMO/Ag sample and increased for the LKMO/STO sample with temperature decrease. In fact, the low-field (μ₀H=0.5 T) MR decreases from 32% to 5% for the LKMO/Ag sample, while increasing from 0.07% to 25% for the LKMO/STO sample with decreasing temperature from 300 to 4 K. The relative change between the intrinsic and the extrinsic MR, and varied roles of the spin-polarized-tunneling and the spin-dependent scattering mechanisms in different temperature regimes are employed to interpret the anomalous transport behaviors.     

巨磁电阻材料La0.9Sr0.1MnO3与半导体Si组成的二极管的整流特性

掺杂锰氧化物La_0.9Sr_0.1MnO₃薄膜被直接沉积在n型 硅基片上，构成p-n结.这种p-n结在很宽的温度范围内都有很好的整流特性.研究结果表明， 这种p-n结的结电阻对低磁场敏感，在3×10^-2T的磁场下，磁电阻可达70％.磁 电阻的正负依赖于温度.磁电阻的大小可通过加在p-n结上的电压调节.     

Magnetoresistance of La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films grown on a substrate with low lattice mismatch

The structure, electrical resistivity, and magnetoresistance of La_0.67Sr_0.33MnO₃ heteroepitaxial films (120-nm thick) practically unstrained by lattice mismatch with the substrate were studied. A strong maximum of negative magnetoresistance of ≈27% (for μ₀H = 4 T) was observed at T ≈360 K. While the magnetoresistance decreased monotonically in magnitude with decreasing temperature, it was still in excess of 2% at 150 K. For T < 250 K, the temperature dependence of the electrical resistivity ρ of La_0.67Sr_0.33MnO₃ films is fitted well by the relation ρ = ρ₀ + ρ ₁(H)T^2.3, where ρ₀ = 1.1×10^?4 Ω cm, ρ₁(H = 0) = 1.8×10^?9 Ω cm/K^2.3, and ρ₁(μ₀H = 4 T)/ρ₁(H = 0) ≈0.96. The temperature dependence of a parameter γ characterizing the extent to which the electrical resistivity of the ferromagnetic phase of La_0.67Sr_0.33MnO₃ films is suppressed by a magnetic field (μ ₀H = 5 T) was determined.     

Electrical and magnetic behavior of La0.7Ca0.3MnO3/La0.7Sr0.2Ca0.1MnO3 composites

The electrical transport properties and the magnetoresistance of La_0.7Ca_0.3MnO₃/La_0.7Sr_0.2Ca_0.1MnO₃ composites are investigated as a function of sintering temperature. On the basis of an analysis by X-ray powder diffraction and scanning electron microscopy we suggest that raising the sintering temperature enhanced the interfacial reaction and creates interfacial phases at the boundaries of the La_0.7Ca_0.3MnO₃ and La_0.7Sr_0.2Ca_0.1MnO₃. Results also show that in 3 kOe, and at the Curie temperature, the magnetoresistance value of 14% was observed for the composite sintered at 1300 °C. Based on the phenomenological equation for conductivity under a percolation approach, which depends on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions, we fitted the experimental resistivity—temperature data from 50-300 K and find that the activation barrier decreases as temperature is increased.     

CURRENT-DEPENDENT POSITIVE MAGNETORESISTANCE IN Ga-DOPED La0.5Ca0.5MnO3

The magnetic and transport properties of the Ga-doped charge-ordering state La_0.5Ca_0.5MnO₃ have been studied. A current-dependent large positive magnetoresistance (1080%) at 5 K was observed. These observations are interpreted in terms of the spin-dependent tunnelling process between ferromagnetic clusters embedded in an antiferromagnetic matrix.     

Enhancing low-field magnetoresistance of La0.67Ca0.33MnO3 films deposited on anodized aluminium-oxide membranes

In this paper we report a new method to fabricate nanostructured films, La0.67Ca0.33MnO3 （LCMO） nanostructured films have been fabricated by using pulsed electron beam deposition （PED） on anodized aluminium oxide （AAO） membranes, The magnetic and electronic transport properties are investigated by using the Quantum Design physics properties measurement system （PPMS） and magnetic properties measurement system （MPMS）. The resistance peak temperature （Tp） is about 85 K and the Curie temperature （To） is about 250 K for the LCMO film on an AAO membrane with a pore diameter of 20nm. Large magnetoresistance ratio （MR） is observed near Tp. The MR is as high as 85% under 1 T magnetic field. The great enhancement of MR at low magnetic fields could be attributed to the lattice distortion and the grain boundary that are induced by the nanopores on the AAO membrane.     

Enhanced temperature-independent magnetoresistance below the metal-insulator transition temperature of epitaxial La0.2Nd0.4Ca0.4MnO3 thin films

Epitaxial La_0.2Nd_0.4Ca_0.4MnO₃ thin films have been deposited at 800°C on LaAlO₃ substrate using pulsed laser deposition technique. The structural and magnetotransport properties of the films have been studied. The sharp peak in the temperature dependence of the resistance corresponding to metal-to-insulator transition (T _p) has been observed at a temperature of T _p=82 K, 97 K and 110 K for 0 Oe, 20 kOe and 40 kOe magnetic fields, respectively. The film exhibits a large nearly temperature-independent magnetoresistance around 99% in the temperature regime below T _p. The zero field-cooled (ZFC) and field-cooled (FC) magnetization data at 50 Oe shows irreversibility between the ZFC and FC close to the ferromagnetic transition temperature T _c=250 K. The ZFC temperature data of the film displays ferromagnetic behavior for higher temperature regime T _c=250 K>T>T _p=82 K, and a decrease in magnetization with decreasing temperature up to 5 K below 82 K exhibiting a sort of antiferromagnetic behavior in the low temperature regime (T<82 K=T _p=T _N).     

Magneto-transport properties of La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3 tunnel junction

Hole-doped rare-earth manganite La_0.7Ca_0.3MnO₃ and the electron-doped manganite La_0.7Ce_0.3MnO₃ both show a metal-insulator transition around 250 K associated with a ferromagnetic transition and colossal magnetoresistance. In an earlier publication we have reported the rectifying characteristic of La_0.7Ca_0.3MnO₃/SrTiO₃/La_0.7Ce_0.3MnO₃ tunnel junction at room temperature, showing that it is possible to fabricate a diode out of the polaronic insulator regime of doped manganites. Here we report the magneto-transport properties of such a tunnel junction above and below the metal-insulator transition. We show, from the large positive magnetoresistance of the tunnel junction at low temperature, that La_0.7Ce_0.3MnO₃ could be a minority spin carrier ferromagnet. The implication of this observation is discussed.     

Magnetoresistance in half-metallic/metallic ferromagnetic junction through silicon

We report spin transport through the silicon in novel magnetic junction with half metallic as free layer and metallic as pinned layer. We used La_0.7Sr_0.3MnO₃ as free layer, FeCo as pinned layer and studied the magnetoresistance through silicon as spacer layer. We fabricated this magnetic tunnel junction using RF/DC sputtering technique over SrTiO₃ substrate. Tunneling magnetoresistance (TMR) measurement for this junction at room temperature was found to be 1.1 %. At 2 K, we found a large magnetoresistance of 396 %. TMR found to be increased with decreasing temperature. The results are discussed.