圆对称环域Josephson结中准磁通量子激发对外磁场的依赖关系

本文研究了在外磁场中圆对称环域Josephson结的环形准磁通量子运动.准磁通量子的激发对外磁场的依赖关系与结的几何尺寸有关.对结宽度αγ₀-γ₀=5λ_J的环域结,外磁场使准磁通量子的寿命增加;对αγ₀-γ₀=10λ_J的环域结,外磁场除了产生上述效应外,还影响准磁通量子运动的细节.外磁场还使第一零场台阶向低驱动电流方向扩展.无疑地,这些变化是与外磁场在结中的不均匀分布密切相关.本文同时讨论了可调Josephson振荡器的一个合理方案.     

脉冲磁场下水热法制备Cr掺杂ZnO稀磁 半导体晶体

本文以ZnCl₂, CrCl₃. 6H₂O和氨水缓冲溶液为原料, 在4T脉冲磁场下水热法制备了Cr掺杂ZnO稀磁半导体晶体, 通过X射线衍射分析、扫描电子显微镜观察及采用振动样品磁强计进行磁性分析等, 探讨了脉冲磁场对其微观结构及磁性能的影响. 结果表明: Cr掺杂ZnO稀磁半导体晶体仍保持ZnO的六方纤锌矿结构, 脉冲磁场具有促进晶粒生长及取向排列的作用, 4T脉冲磁场条件下合成的Cr掺杂ZnO稀磁半导体具有良好的室温铁磁性, 其饱和磁化强度(M_s)为0.068 emu/g, 而无脉冲磁场情况下制备的样品室温下呈顺磁性, 并且, 脉冲磁场下制备将稀磁半导体的居里温度提高了16 K.     

超导材料NbS2上临界磁场的理论分析

根据两带Ginzburg-Landau 理论计算了层状超导材料NbS₂的上临界磁场, 以及上临界磁场各向异性参数随温度的变化情况, 并将NbS₂与MgB₂, NbSe₂上临界磁场的各向异性进行比较. 所得计算结果与已有实验数据符合得很好, 充分说明了NbS₂的超导电性具有两能隙特征. NbS₂上临界磁场各向异性参数在5.0 K附近逐渐变小, 这与MgB₂和NbSe₂有相似之处. 但NbS₂的上临界磁场各向异性参数大约为7.3, 明显大于MgB₂和NbSe₂. 计算结果还表明, NbS₂较大能隙所对应能带的有效质量比约为54, 另一能带的有效质量基本为各向同性.     

确定磁性体在绝热磁化过程中达到最高温度的方法

在磁性体磁化过程中, 决定其能够达到的最高温度, 对磁热材料的优化选取是重要的. 本文以钆镓石榴石(Gd₃Ga₅O₁₂) 为例, 根据高磁场下趋近饱和定律的思想, 给出了低温、超强磁场下, Gd₃Ga₅O₁₂晶体等效磁化率的定量形式. 在外磁场从0---40 T范围内, 计算了该晶体的磁熵变、声子熵变以及磁性体温度随外磁场的变化, 结果均与实验值符合较好. 利用声子熵变与饱和磁熵变曲线交点的唯一性, 给出了在磁性体磁化过程中, 确定其温度达到最大值的方法, 预言了Gd₃Ga₅O₁₂晶体在绝热磁化过程中达到的最高温度为64.7K. 该方法还可以对所加外磁场大小进行预言或估计.     

脉冲磁场对水热法制备Mn掺杂ZnO稀磁半导体的影响

本文以Zn(CH₃COO)₂·2H₂O, Mn(CH₃COO)₂·4H₂O和氨水缓冲溶液为原料, 在4 T脉冲磁场下利用水热法制备了Mn掺杂ZnO稀磁半导体晶体, 通过X射线衍射、 扫描电子显微镜、透射电子显微镜、拉曼光谱、荧光分光光度计及振动样品磁强计等对样品的微观结构及磁性能等进行了表征, 结果表明: Mn掺杂ZnO稀磁半导体晶体仍保持ZnO六方纤锌矿结构, 4 T脉冲磁场下合成的Mn掺杂ZnO稀磁半导体晶体具有明显的室温铁磁性, 其饱和磁化强度(M_s)为0.028 emu/g, 比无脉冲磁场下制备的样品提高一倍以上, 且4 T 脉冲磁场将样品的居里温度提高了15 K.     

引导磁场对相对论返波管微波功率的影响

 对引导磁场大小对相对论返波管(RBWO)微波功率的影响进行了理论和实验研究。首先利用KARAT软件对RBWO进行了全电磁PIC数值模拟,发现当磁场降低时,TE模与TM₀₁模的竞争导致微波功率降低,同时模拟中观察到“电子回旋共振吸收”现象,它是由于电子束与慢波结构中TM₀₁模的基波相互作用的结果;然后进行了实验研究,实验结果与数值模拟基本相符。     

超导膜的能隙和磁场的依赖关系

本文计算出超导膜在磁场中的能隙。所得到的表达式适用于所有的温度,但磁场要满足((ehp₀/(mc) A/(πk_BT_c))²《1条件,其中A是矢势,hp₀是Fermi动量。理论结果和实验进行了比较,符合得还好。     

利用轴向磁化的永磁环制造轴向梯度磁场

首先叙述了由单个轴向磁化环所产生的磁场,并就两个永磁环所产生的纵向磁场进行了分析.对于两个沿同一方向磁化的永磁体环,沿磁环中心线将会产生一个强度较为均匀的轴向磁场.如果两者的磁化方向相反,则在两磁铁间的区域将产生一个纵向的梯度磁场,其磁场强度介于-B₀到+B₀之间.设计制造了一个高梯度的轴向磁场,其磁场梯度为47.2Tm,测量结果与计算结果非常一致.文中还讨论了产生变梯度磁场的方法.由于永磁环所产生的磁场和螺线管的磁场较为相似,磁铁外部空间将有较大的漏场,最后还讨论了屏蔽漏场的问题.     

磁场下合成Fe3O4粉体的隧道磁阻

通过在半金属Fe₃O₄合成过程中外加磁场的方法，改变样品粒子的表面结晶状态和晶格缺陷，研究了由此引起的Fe₃O₄输运性质的变化.合成的Fe₃O₄粉体的主要导电机理均为自旋极化隧穿和高阶跃迁电导，电阻随温度升高成指数降低，电阻与电压显示了非线形相关性，磁阻与磁场的关系为蝴蝶形，是典型的隧道磁阻特征.与没有外加磁场时合成的样品比较，外加磁场合成的样品显示了更低的电阻和更高的磁阻.     

磁场作用下的有机电致发光

分别制备了荧光器件ITO/NPB/Alq₃/LiF/Al和磷光器件ITO/NPB /CBP: Ir（ppy）₃/BCP/Alq₃/LiF/Al, 测试了50 mT磁场作用下器件的I-V和L-V特性. 与零磁场相比荧光器件和磷光器件的效率分别增加了44%和7%. 从有机电致发光的机制出发对该现象进行了解释, 认为外加磁场可以使三重态激子发生塞曼分裂, 进而在荧光器件中引起了三重态激子T     

Interface induced exchange bias effect in La0.67Sr0.33MnO3/SrIrO3 multilayer

Epitaxial superlattices of ferromagnetic/paramagnetic La_0.67Sr_0.33MnO₃/SrIrO₃ materials have been prepared on SrTiO₃ (100) substrate using pulse laser deposition technique. An unexpected onset of interface magnetic interaction has been observed around 40 K. Interestingly, magnetic exchange bias effect has been observed in both field cooled and zero field cooled magnetization loops, however, the shifting of loop is opposite in both measurements. Exchange bias field vanishes as temperature increases to interface magnetic ordering temperature. Moreover, exchange bias field is found to decrease with increasing cooling field. We believe that tuning of magnetic exchange at interface during field cooling induces this evolution in nature of exchange bias field.     

Magnetoabsorption in n-type InSb from 8 to 15 μm

Magnetoabsorption measurements in n-type InSb at T?30K have been made between ～ 8 and 15 μm using magnetic fields up to 150 kOe. The observed absorption peaks are identified as due to combined resonance, harmonics of cyclotron resonance and the corresponding LO phonon-assisted resonances. These resonant absorptions are considered to be important in the interpretation of the observed magnetic field behavior of the threshold and output power of the InSb spin-flip Raman laser pumped with 10.6 μm CO₂ laser.     

Observation of photon echoes using a nitrogen laser pumped dye laser

Photon echoes have been observed using a nitrogen laser pumped dye laser as the excitation source. The echo was obtained in the ³H₄→³P₀ transition in Pr³⁺:LaF₃. The dependence of echoes on magnetic field and temperature was measured.     

High-order stokes emission from a pulsed spin-flip raman laser at 5 μm

Pulsed spin-flip Raman laser action, up to 3rd Stokes, at 5.3 μm has been observed in n-type InSb using the harmonically doubled output from a compact 50 cm long TEA CO₂ laser as the pump. In addition magnetic field thresholds as low as 350 G have been used for first Stokes output. Spin-flip radiation line widths of 0.02 cm^-1 (full width at half height) were obtained.     

Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential

In this work are studied the intense laser effects on the impurity states in GaAs-Ga_{1− x} Al _x As quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction of the quantum well whereas the magnetic field is considered to be in-plane. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included through the Floquet method by modifying the confinement potential associated to the heterostructure. The results are presented for several configurations of the dimensions of the quantum well, the position of the impurity atom, the applied electric and magnetic fields, and the incident intense laser radiation. The results suggest that for fixed geometry setups in the system, the binding energy is a decreasing function of the electric field intensity while a dual monotonic behavior is detected when it varies with the magnitude of an applied magnetic field, according to the intensity of the laser field radiation.     

强激光在磁化不均匀等离子体中引起的密度轮廓变陡

本文从平面电磁波垂直入射于一维不均匀磁化等离子体的理论模型出发,通过计算电磁场结构,讨论了自生磁场对于密度轮廓修正的影响。我们的计算结果不仅与Nd玻璃激光打靶实验相符,也与CO₂激光打靶实验相一致,而且还能自然得到临界面附近的密度凹陷。 关键词：     

Exchange bias in the IrMn/Co structures with alternative sequences of antiferromagnetic and ferromagnetic layers

The magnetic properties of Mo/IrMn/Co/Mo/SiO₂/Si structures with alternative sequences of the antiferromagnetic and ferromagnetic layers have been studied by measuring the angular dependence of the high-frequency radiation absorption in the ferromagnetic resonance region. The layers have been prepared by pulsed laser deposition in the absence of a magnetic field. It has been found that thermal annealing and cooling make it possible to create the exchange bias in the structure with the upper antiferromagnetic layer at a temperature much below the Néel temperature. At the same time, the identical heat treatment does not induce the exchange bias in the structure with the upper ferromagnetic layer. The possible mechanisms of the phenomena observed are discussed.     

Nernst effect in Tl-Ba-Ca-Cu-O superconducting films due to infrared laser heating

A Nernst effect has been observed in a high temperature superconductor for the first time. Irradiating superconducting Tl–Ba–Ca–Cu–O thin films by short pulses of a TEA-CO₂ laser, a photovoltaic signal is detected perpendicular to a magnetic field applied parallel to the film surface. The signal is attributed to magnetic flux line depinning and flux line transport driven by the laser induced temperature gradient. The results are described by thermal flux line activation leading to a calculated distribution of pinning energies from 100 K to 4000 K.     

Self‐focusing of a cosh‐Gaussian laser beam in magnetized plasma under relativistic‐ponderomotive regime

The combined effect of relativistic and ponderomotive nonlinearities on the self‐focusing of an intense cosh‐Gaussian laser beam (CGLB) in magnetized plasma have been investigated. Higher‐order paraxial‐ray approximation has been used to set up the self‐focusing equations, where higher‐order terms in the expansion of the dielectric function and the eikonal are taken into account. The effects of various lasers and plasma parameters viz. laser intensity (a₀), decentred parameter (b), and magnetic field (ω_c) on the self‐focusing of CGLB have been explored. The results are compared with the Gaussian profile of laser beams and relativistic nonlinearity. Self‐focusing can be enhanced by optimizing and selecting the appropriate laser‐plasma parameters. It is observed that the focusing of CGLB is fast in a nonparaxial region in comparison with that of a Gaussian laser beam and in a paraxial region in magnetized plasma. In addition, strong self‐focusing of CGLB is observed at higher values of a₀, b, and ω_c. Numerical results show that CGLB can produce ultrahigh laser irradiance over distances much greater than the Rayleigh length, which can be used for various applications.