GLSI多层铜布线CMP后BTA去除研究

本文通过静态腐蚀速率的方法分析确立了碱性清洗剂中FA/OⅡ型螯合剂和FA/OⅠ型表面活性剂对BTA的去除规律。通过单因素实验和复合清洗剂的实验优化,确定了去除BTA的清洗剂配方,并通过接触角实验进一步证实实验结果的有效性。最后,将优化后的清洗剂配方在实际生产线上做试验,结果表明能有效去除BTA、CuO晶粒及磨料SiO2,且基本无界面腐蚀。解决了一直难以解决的多层铜布线CMP后有效去除BTA的难题,且该清洗剂成分简单,成本低而且环保。     

一种有效解决Cu CMP后残留二氧化硅颗粒的清洗液

摘要：在本文中提出了一种新型有效去除二氧化硅颗粒的FA/O清洗液,其主要成分包括FA/OII型螯合剂和FA/O型活性剂。这种清洗液能够同时去除以物理和化学吸附在晶圆表面的硅溶胶颗粒。 在本文实验过程中通过改变螯合剂和活性剂的浓度, 得出最佳清洗浓度。并且,讨论了这种FA/O碱性清洗剂去除硅溶胶颗粒的机理。根据实验结果可知,FA/OII型螯合剂和活性剂都能够有效去除硅溶胶颗粒。当FA/OII型螯合剂和FA/O活性剂达到最佳配比时,这种新型清洗液能够有效去除硅溶胶颗粒。     

碱性阻挡层CMP后铜布线粗糙度的影响机理分析

The surface roughness seriously affects the performance of devices after barrier CMP. Due to the high surface roughness of copper line, the local resistance of a device will be high when working, then the copper line will overheat prompting the generation of electro-migration and the circuit will lose efficacy. Reducing the surface roughness of the copper line in barrier CMP is still an important research topic. The main factors influencing the surface roughness of copper line in alkaline barrier slurry are analyzed in the paper. Aimed at influencing the law on the surface roughness of copper line, using a new type of alkaline barrier slurry with a different p H of the chelating agent and changing the content of non-ionic surfactant, we then analyze the influencing law both on the surface roughness of copper line, and the influence mechanism. The experimental results show that with a chelating agent with a low p H value in the barrier slurry, the surface roughness of the copper line is 1.03 nm and it is the lowest in all of the barrier slurries, and with the increase of non-ionic surfactant concentration, the surface roughness of copper line is reduced to 0.43 nm, meeting the demand of further development of integrated circuits.     

一种含有盐酸胍的新型TSV抛光液

本文中,对一种新型的含有盐酸胍的TSV抛光液在CMP(化学机械平坦化)中的性能进行了研究,该TSV抛光液是一种碱性抛光液,并且不含任何抑制剂。在抛光过程中,盐酸胍作为一种有效的表面复合单元,相对于铜和介质的去除速率,钛的去除速率是可以通过调节选择性来控制的。在TSV生产过程中对于表面蝶形坑的修正及得到好的表面平整度是有利的。本文主要研究了抛光液成分的作用机理以及盐酸胍在TSV抛光液中的巧妙应用。     

非离子表面活性剂在阻挡层CMP后清洗中去除颗粒作用的研究

本文对非离子表面活性剂在阻挡层CMP后清洗中对颗粒的去除作用进行了研究。实验过程中,通过改变活性剂的浓度,在12inch多层铜布线片上进行了一系列的实验来确定最佳的清洗效果。然后对活性剂在缺陷控制、颗粒去除,以及活性剂在清洗过程中所起的负面作用等方面进行了讨论。实验结果表明,非离子表面活性剂在阻挡层CMP后清洗中根据浓度的不同所起的正面、负面作用不同,从而为阻挡层CMP后清洗过程中非离子表面活性剂的加入起到一定的指导作用。     

新型碱性清洗剂对BTA去除的研究

为了有效去除化学机械抛光(CMP)后清洗中的苯并三氮唑(BTA)沾污,分析了碱性清洗剂中FA/OⅡ型螯合剂和FA/OⅠ型表面活性剂对BTA去除的影响规律。铜光片上的单因素实验中,通过测试铜光片清洗前后铜表面与去离子水的接触角得出:FA/OⅡ型螯合剂是影响铜光片上BTA去除的主要因素,FA/OⅠ型表面活性剂对铜光片上BTA的去除有一定的作用。利用扫描电镜测试采用不同体积分数和不同配比的清洗液清洗后的图形片上的BTA沾污,通过对比清洗后铜光片上残留的BTA沾污数量可知,清洗剂中FA/OⅡ型螯合剂体积分数为0.01%和FA/O I型表面活性剂体积分数为0.25%时,清洗剂清洗BTA沾污效果最好,基本上无BTA沾污残留,并且清洗后未发现氧化铜颗粒和硅溶胶颗粒沾污。     

以苯并三氮唑为分散剂的高分散银粉制备工艺研究北大核心CSCD

以硝酸银(AgNO3)为银源、抗坏血酸为还原剂、苯并三氮唑(BTA)为分散剂,通过液相还原法制备了分散性好的超细银粉。实验研究了BTA用量,反应温度和还原剂溶液pH值等对制得银粉形貌和粒径的影响,并通过红外光谱分析了分散剂BTA的作用机理。结果表明:采用BTA为分散剂可以明显提高银粉的分散性,制得高分散的球形银粉;升高反应温度会降低银粉的粒径,但温度过高会导致银粉颗粒之间的团聚;通过调节还原剂溶液的pH值,可以将银粉的平均粒径控制在0.83~2.40μm;红外光谱分析表明,BTA分子能吸附在银粒子的表面,从而产生空间位阻作用有效阻止银颗粒间的团聚。     

一种新型铜槽模型对电镀均匀性提升的研究

文章主要根据传统的电镀铜理论,建立了一个新型的镀铜槽模型,对阴极电流传输方式、阴极冷冻方式、夹具优化、阳极挡板调整、阴阳极之间的距离等方面进行优化,电流从整流机传输至飞巴顶部再均分至夹具的传输方式,电流分布尖端效应影响明显处进行挡板、打孔处理,优化了电力线的分布,达到了提高垂直电镀线电镀厚度均匀性目的;实验结果表明:整个飞巴的极差小于8.5mm,COV达到4.8%,效果显著。     

对一种新型全方位旋转黑板的研究

新型全方位旋转黑板,顾名思义是通过黑板布的绕轴旋转实现黑板面的重复使用,突破黑板使用面积的限制。黑板由黑板布、黑板擦、旋转轴、电机、集粉槽、内部辅助旋转结构、支撑隔板和紧固夹等部分组成,使其更好地发挥作用。     

一种新型的零电压零电流三电平变换器的研究

针对采用IGBT的软开关三电平变换器中IGBT关断过程存在的电流拖尾现象,以及基本三电平拓扑变压器次级存在的电压过冲和电压振荡现象,提出了改进型ZVZCS三电平结构。该结构在基于拓扑的三电平桥臂侧和两电平桥臂侧分别加入了一个无源辅助网络,三电平桥臂侧的辅助变压器在续流阶段为主变压器初级电流回零提供了条件,两电平桥臂的谐振电感和箍位二极管有效地抑制了主变压器次级电压的过冲现象。详细分析了改进拓扑的工作原理、工作模态,以及辅助网络的工作特点,并研制了实验样机,验证了理论分析的正确性以及改进拓扑的可行性。     

Synergetic effect of chelating agent and nonionic surfactant for benzotriazoleremoval on post Cu-CMP cleaning

The cleaning of copper interconnects after chemical mechanical planarization (CMP) process is a critical step in integrated circuits (ICs) fabrication. Benzotriazole (BTA), which is used as corrosion inhibitor in the copper CMP slurry, is the primary source for the formation of organic contaminants. The presence of BTA can degrade the electrical properties and reliability of ICs which needs to be removed by using an effective cleaning solution. In this paper, an alkaline cleaning solution was proposed. The alkaline cleaning solution studied in this work consists of a chelating agent and a nonionic surfactant. The removal of BTA was characterized by contact angle measurements and potentiodynamic polarization studies. The cleaning properties of the proposed cleaning solution on a 300 mm copper patterned wafer were also quantified, total defect counts after cleaning was studied, scanning electron microscopy (SEM) review was used to identify types of BTA to confirm the ability of cleaning solution for BTA removal. All the results reveal that the chelating agent can effectively remove the BTA residual, nonionic surfactant can further improve the performance.     

多层铜布线CMP后表面残留CuO颗粒的去除研究

This article introduces the removal technology of CuO particles on the post CMP wafer surface of multi-layered copper. According to the Cu film corrosion curve with different concentrations of HEO2 and the effect curve of time on the growth rate of CuO film, CuO film with the thickness of 220 nm grown on Cu a surface was successfully prepared without the interference of CuC12.2H20. Using the static corrosion experiment the type of chelating agent （FA/O II type chelating agent） and the concentration range （10-100 ppm） for CuO removal was determined, and the Cu removal rate was close to zero. The effect of surfactant on the cleaning solution properties was studied, and results indicated that the surfactant has the effect of reducing the surface tension and viscosity of the cleaning solution, and making the cleaning agent more stable. The influence of different concentrations of FA/O I type surfactant and the mixing of FA/O II type chelating agent and FA/O I type surfactant on the CuO removal effect and the film surface state was analyzed. The experimental results indicated that when the concentration of FA/O I type surfactant was 50 ppm, CuO particles were quickly removed, and the surface state was obviously improved. The best removal effect of CuO on the copper wiring film surface was achieved with the cleaning agent ratio of FA/O II type chelating agent 75 ppm and FA/O I type surfactant 50 ppm. Finally, the organic residue on the copper pattern film after cleaning with that cleaning agent was detected, and the results showed that the cleaning used agent did not generate organic residues on the film surface, and effectively removes the organic residue on the water.     

A novel deep neural network for noise removal from underwater image

Underwater image processing technologies have always been challenging tasks due to the complex underwater environment. Images captured under water are not only affected by the water itself, but also by the diverse suspended particles that increase the effect of absorption and scattering. Moreover, these particles themselves are usually imaged on the picture, causing the spot noise signal to interfere with the target objects. To address this issue, we propose a novel deep neural network for removing the spot noise from underwater images. Its main idea is to train a generative adversarial network (GAN) to transform the noisy image to clean image. Based on the deep encoder and decoder framework, the skip connections are introduced to combine the features of low-level and high-level to help recover the original image. Meanwhile, the self-attention mechanism is employed to the generative network to capture global dependencies in the feature maps, which can generate the image with fine details at every location. Furthermore, we apply the spectral normalization to both the generative and discriminative networks to stabilize the training process. Experiments evaluated on synthetic and real-world images show that the proposed method outperforms many recent state-of-the-art methods in terms of quantitative and visual quality. Besides, the results also demonstrate that the proposed method has the good ability to remove the spot noise from underwater images while preserving sharp edge and fine details.