共查询到20条相似文献,搜索用时 546 毫秒
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详细讨论了GaAs/AlxGa1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导. 相似文献
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详细讨论了GaAs/AlxGa1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导.
关键词:
球形量子点
解析方法
平面波展开方法
有效质量 相似文献
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详细讨论了GaAs/AlxGa1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导. 相似文献
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无限深势阱下杂质量子点的能级计算 总被引:1,自引:0,他引:1
在有效质量近似下,垂直方向采用无限深势阱限制势,在x-y平面上,量子点内采用抛物势近似,在量子点边界处采用与实际情况更接近的无限深势阱.在中心杂质电荷为ηe时,利用波函数近似,得到基态和低激发态的能级,与x-y平面均采用抛物势时得到的能级进行了比较.计算发现在量子点真实半径比较小时,电子的基态和低激发态受其影响很大,而相应的能级随量子点的半径逐步增大.在量子点半径大于5倍有效玻尔半径时,能级受其影响已经变得很弱.并且,随着磁场的变化,量子点半径对基态和第一激发态的能级差的影响也很大.最后我们计算了杂质电子的基态束缚能并讨论了声子对其影响. 相似文献
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We present a theoretical analysis of the electronic structure of GaN/AlN quantum dots (QD) with a hexagonal, truncated-pyramidal shape. We use a Fourier-transform technique that we had previously developed to calculate the 3D strain and built-in electric fields due to the QD structure. The electron and hole energy levels and wavefunctions are then calculated in the framework of an 8-band k·P model (with zero spin–orbit splitting), using an efficient plane-wave expansion method. We show that because of the large built-in piezoelectric and spontaneous polarization fields, the calculated transition energy is sensitive to variations in the wetting layer width, pyramid top diameter and also to the values chosen for the piezo-electric constants and spontaneous polarization values of bulk GaN and AlN. Numerical results are presented for a set of GaN/AlN QD structures that have been studied experimentally and described in the literature. We find that the calculated value of the ground-state optical transition energy for these structures is in good agreement with experiment. 相似文献
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Electronic and optical properties of GaN/AlN quantum dots with adjacent threading dislocations 下载免费PDF全文
We present a theory to simulate a coherent GaN QD with
an adjacent pure edge threading dislocation by using a finite
element method. The piezoelectric effects and the strain modified
band edges are investigated in the framework of multi-band $\bm
k\cdot \bm p$ theory to calculate the electron and the heavy hole
energy levels. The linear optical absorption coefficients
corresponding to the interband ground state transition are obtained
via the density matrix approach and perturbation expansion method. The
results indicate that the strain distribution of the threading
dislocation affects the electronic structure. Moreover, the ground
state transition behaviour is also influenced by the position of the
adjacent threading dislocation. 相似文献
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《Superlattices and Microstructures》1996,19(2):81-95
We perform experimental and theoretical studies of the electronic structure and relaxation processes in pyramid shaped InAs/GaAs quantum dots (QDs), grown by molecular beam epitaxy in the Stranski-Krastanow growth mode. Structural properties are characterized with plan view and cross section transmission electron microscopy.Finite difference calculations of the strain and the 3D Schrödinger equation, taking into account piezoelectric and excitonic effects, agree with experimental results on transition energies of ground and excited states, revealed in luminescence and absorption spectra. We find as relative standard deviation of the size fluctuation ξ=0.04; the pyramid shape fluctuates between {101} and {203} side facets.Carrier capture into the QD ground state after carrier excitation above barrier is a very efficient process. No luminescence from excited states is observed at low excitation density. Energy relaxation processes in the zero-dimensional energy states are found to be dominated by phonon energy selection rules. However, multi-phonon emission (involving GaAs barrier, InAs wetting layer, InAs QD and interface modes) allows for a large variety of relaxation channels and thus a phonon bottleneck effect does not exist here. 相似文献
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Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings 下载免费PDF全文
This paper presents a finite element calculation for the
electronic structure and strain distribution of self-organized
InAs/GaAs quantum rings. The strain distribution calculations are
based on the continuum elastic theory. An ideal three-dimensional
circular quantum ring model is adopted in this work. The electron
and heavy-hole energy levels of the InAs/GaAs quantum rings are
calculated by solving the three-dimensional effective mass
Schr?dinger equation including the deformation potential and
piezoelectric potential up to the second order induced by the
strain. The calculated results show the importance of strain and
piezoelectric effects, and these effects should be taken into
consideration in analysis of the optoelectronic characteristics of
strain quantum rings. 相似文献
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The binding energy of a hydrogenic donor impurity in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) is investigated, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the strong built-in electric field induces an asymmetrical distribution of the donor binding energy with respect to the center of the QD. The donor binding energy is insensitive to dot height when the impurity is located at the right boundary of the QD with large dot height. 相似文献
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Stanko Tomić Nicholas M. Harrison Timothy S. Jones 《Optical and Quantum Electronics》2008,40(5-6):313-318
Intermediate band solar cells (IBSC) have been proposed as a potential design for the next generation of highly efficient photo-voltaic devices. Quantum nanostructures, such as quantum dots (QD), arranged in super-lattice (SL) arrays produce a mini-band (IB) that is separated by a region of zero density of states from other states in the conduction band. Additional absorption from the valence band to the IB and IB to the conduction band allows two photons with energies below the energy gap to be harvested in generating one electron-hole pair. We present a theoretical study of the electronic and optical properties of the IB formed by an InAs/GaAs QD array. The calculations are based on an 8-band k · p Hamiltonian, incorporating mixing between valence and conduction states, strain and piezoelectric field. Theoretical results of the the mini-band width variation with the period of the QD array in the z direction are presented. For one particular spacer distance, d z = 4 nm, we report detailed variation of the optical dipole matrix elements through the mini-band and identify the character of the states involved. This approach captures the essential physics of the absorption processes in a realistic model of the IBSC structure and will be used to provide input parameters for predictive modelling of transport properties. 相似文献
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D. P. Williams A. D. Andreev D. A. Faux E. P. O'Reilly 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):358
We present a simple analytical approach to calculate the built-in strain-induced and spontaneous piezoelectric fields in nitride-based quantum dots (QDs) and then apply the method to describe the variation of exciton, biexciton and charged exciton energy with dot size in GaN/AlN QDs. We first present the piezoelectric potential in terms of a surface integral over the QD surface, and confirm that, due to the strong built-in electric field, the electrons are localised near the QD top and the holes are localised in the wetting layer just below the dot. The strong localisation and smaller dielectric constant results in much larger Coulomb interactions in GaN/AlN QDs than in typical InAs/GaAs QDs, with the interaction between two electrons, Jee, or two holes, Jhh, being about a factor of three larger. The electron–hole recombination energy is always blue shifted in the charged excitons, X− and X+, and the biexciton, and the blue shift increases with increasing dot height. We conclude that spectroscopic studies of the excitonic complexes should provide a useful probe of the structural and piezoelectric properties of GaN-based QDs. 相似文献
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Based on the effective-mass approximation and variational procedure, ionized donor bound exciton (D+, X) states confined in strained wurtzite (WZ) GaN/AlxGa1-xN cylindrical (disk-like) quantum dots (QDs) with finite-height potential barriers are investigated, with considering the influences of the built-in electric field (BEF), the biaxial strain dependence of material parameters and the applied hydrostatic pressure. The Schrödinger equation via the proper choice of the donor bound exciton trial wave function is solved. The behaviors of the binding energy of (D+, X) and the optical transition associated with (D+, X) are examined at different pressures for different QD sizes and donor positions. In our calculations, the effective masses of electron and hole, dielectric constants, phonon frequencies, energy gaps, and piezoelectric polarizations are taken into account as functions of biaxial strain and hydrostatic pressure. Our results show that the hydrostatic pressure, the QD size and the donor position have a remarkable influence on (D+, X) states. The hydrostatic pressure generally increases the binding energy of (D+, X). However, the binding energy tends to decrease for the QDs with large height and lower Al composition (x<0.3) if the donor is located at z0≤0. The optical transition energy has a blue-shift (red-shift) if the hydrostatic pressure (QD height) increases. For the QDs with small height and low Al composition, the hydrostatic pressure dependence of the optical transition energy is more obvious. Furthermore, the relationship between the radiative decay time and hydrostatic pressure (QD height) is also investigated. It is found that the radiative decay time increases with pressure and the increment tendency is more prominent for the QDs with large height. The radiative decay time increases exponentially reaching microsecond order with increasing QD height. The physical reason has been analyzed in depth. 相似文献
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External Electric Field Effect on Hydrogenic Donor Impurity in Zinc-Blende InGaN Quantum Dot 下载免费PDF全文
The binding energy of a hydrogenic donor impurity in zinc-blende (ZB) InGaN quantum dot (QD) is calculated in the framework of effective-mass envelope-function theory using the plane wave basis. It is shown that the donor binding energy is highly dependent on the impurity position, QD size and the external electric field. The symmetry of the electron probability distribution is broken and the maximum of the donor binding energy is shifted from the centre of QD in the presence of the external electric field. The degenerating energy levels for symmetrical positions with respect to the centre of QD are split. The splitting increases with the increase of QD height while the splitting increases up to a maximum value and then decreases with the increase of QD radius. 相似文献