新型声表面波气体传感器

介绍了声表面波（SAW）气体传感器的工作原理及器件制作，提出了1种表面波SO2传感器，它采用三乙醇胺（TEA）覆盖薄膜，分辨率可达70×10－9。还讨论了SAW气体传感器的稳定性、可靠性、灵敏度及选择性等问题，并给出了有关的实验结果。     

基于激光激发声表面波新型气体传感器的研究

提出了一种利用激光激发声表面波,通过气体吸附性薄膜对被测气体进行检测的传感原理.激光在覆有选择性气体吸附膜的铝块表面激发出声表面波,后者沿铝块表面传播.在吸附性薄膜与被测气体发生反应后,声表面波的强度被改变;然后利用PMT(光电倍增管),通过单芯光纤耦合的反射式光束偏转法探测由半导体激光器发出的探测光束,所检测的光强的变化反映了被检测气体的浓度,从而实现被测气体的浓度测量.     

磁控溅射WO_3薄膜的制备及其NO_2气敏特性研究

采用直流反应磁控溅射法,在室温条件下通过改变放电气体压强制备出具有不同膜密度的WO3薄膜。结构表征结果表明,由单斜晶WO3纳米颗粒组成的薄膜具有层状结构,随着放电气体压强的增加,膜密度呈下降趋势。气敏特性研究结果表明,由WO3薄膜制备而成的气体传感器在工作温度为200℃时获得对NO2气体的最大灵敏度,并在50~300℃的工作温度范围内对NO2气体均展现出良好的气敏特性。在相同的检测条件下,气体灵敏度随着膜密度的减少而增加。     

一种高灵敏度光声光纤SO2气体传感器的研究

基于气体光声效应原理，研究了一种高灵敏度光纤SO2气体浓度传感器。用染料激光器作为激励源，激励出光声信号，采用光纤位移传感器测量光声信号。设计了光学长程装置以提高光声腔的灵敏度。用此装置测量SO2气体浓度，给出了实验数据并对结果作了分析。     

LiNbO3声表面波特性及其应用

LiNbO3因其优异的压电性能和声表面波特性被广泛应用于声表面波器件中.着重介绍LiNbO3的压电性能、声表面性能及其薄膜制备技术,对通过不同制备工艺生长出的LiNbO3薄膜的质量和声表面波性能进行了比较,并简要介绍了LiNbO3在声表面波领域应用的新进展.     

新型SnO2/WO3双层薄膜NO2敏感性能研究

采用射频磁控反应溅射锡(Sn)靶和钨(W)靶的方法制备了SnO2/WO3双层薄膜材料,通过XRD和XPS实验研究了双层薄膜的物相结构和组份,结果表明,SnO2/WO3双层薄膜经过热处理后形成了SnWO4化合物.在此基础之上,制作了相应的NO2气体敏感薄膜传感器,研究了双层薄膜传感器的制备工艺参数及工作条件对传感器性能的影响,研究了传感器的敏感特性,包括灵敏度、选择性、响应恢复等特性.结果表明,传感器对NO2气体有较好的敏感性,对其他干扰气体不敏感.     

表面声波气体传感器

引言把表面声波(简称SAW)元件做成气体传感器已于1979年第一次提出。这种传感器的优点是体积小(<0.1cm~3),灵敏度高(可检测到ppm数量级,甚至ppb数量级),价格便宜。 SAW气体传感器的基本原理是在SAW元件的延迟线上覆盖上一层薄膜,被测气体分子通过扩散进入薄膜,或者用物理吸附方法吸附在薄膜上,或者用化学吸附方法吸附     

ZnO薄膜的制备及p型掺杂研究进展

氧化锌是一种在声表面波传感器、压电器件以及太阳能电池等方面具有很好应用前景的材料。介绍了目前制备ZnO薄膜的主要方法,综述了ZnO薄膜p型掺杂的研究现状,并对ZnO薄膜的研究进行了展望。     

LiNbO_3压电薄膜的研究进展

LiNbO3因其优异的压电性能和声表面波特性而被广泛应用于声表面波器件中。对LiNbO3的声表面波特性及薄膜制备技术进行了综述,并着重介绍了LiNbO3/蓝宝石及LiNbO3/金刚石多层结构的制备、声表面波特性的理论研究及压电薄膜研究进展。     

基于ZnO半导体纳米线膜的声表面波型紫外探测器

针对传统半导体光电探测器件结构的宽带隙半导体紫外探测器可测信号弱的问题,提出了一种基于ZnO纳米线膜的声表面波型紫外探测器.该探测器利用ZnO纳米线膜的强紫外光电响应特性和声表面波器件的灵敏的声电相互作用机制,将采用高纯锌粉的热蒸发氧化工艺制备的纤锌矿型ZnO纳米线制作在已有声表面波小波传感器上.利用光致发光谱研究发现,由于低维激子限域效应和表面效应,所制作ZnO纳米线敏感膜中的紫外光电效应优于外延ZnO半导体薄膜;同时,基于ZnO纳米线膜的声表面波式紫外探测器在紫外光辐照下该探测器的中心频率减小,损耗增大.实验研究表明该器件能够实现长波紫外光的高灵敏度探测.     

NH3 sensing characteristics of nano-WO3 thin films deposited on porous silicon

The NH3 sensing characteristics of nano-tungsten trioxide (WO3) thin films deposited on porous silicon (PS) were investigated in the present study. Porous silicon layer was first prepared by electrochemical etching in an HF-based solution on a p(+)-type silicon substrate. Then, WO3 nano-films were deposited on the porous silicon layer by DC magnetron sputtering. Pt electrodes were deposited on the top surface of the WO3 films to obtain the WO3/PS gas sensor. The WO3 films deposited on PS were characterized by SEM, XRD and XPS. The NH3 sensing characteristics for WO3/PS gas sensor were tested at room temperature and 50 degrees C. The results showed that the NH3 sensing characteristics of WO3/PS were superior to WO3/Al2O3 at room temperature. The sensing mechanism of the nano-WO3 thin films based on PS was also discussed.     

Morphology-tailored synthesis of tungsten trioxide (hydrate) thin films and their photocatalytic properties

Tungsten trioxide hydrate (3WO(3)·H(2)O) films with different morphologies were directly grown on fluorine doped tin oxide (FTO) substrate via a facile crystal-seed-assisted hydrothermal method. Scanning electron microscopy (SEM) analysis showed that 3WO(3)·H(2)O thin films composed of platelike, wedgelike, and sheetlike nanostructures could be selectively synthesized by adding Na(2)SO(4), (NH(4))(2)SO(4), and CH(3)COONH(4) as capping agents, respectively. X-ray diffraction (XRD) studies indicated that these films were of orthorhombic structure. The as-prepared thin films after dehydration showed obvious photocatalytic activities. The best film grown using CH(3)COONH(4) as a capping agent generated anodic photocurrents of 1.16 mA/cm(2) for oxidization of methanol and 0.5 mA/cm(2) for water splitting with the highest photoconversion efficiency of about 0.3% under simulated solar illumination.     

Development of a detection sensor for lethal H2S gas

The gas which may be lethal to human body with short-term exposure in common industrial fields or workplaces in LAB may paralyze the olfactory sense and impose severe damages to central nervous system and lung. This study is concerned with the gas sensor which allows individuals to avoid the toxic gas that may be generated in the space with residues of organic wastes under 50 degrees C or above. This study investigates response and selectivity of the sensor to hydrogen sulfide gas with operating temperatures and catalysts. The thick-film semiconductor sensor for hydrogen sulfide gas detection was fabricated WO3/SnO2 prepared by sol-gel and precipitation methods. The nanosized SnO2 powder mixed with the various metal oxides (WO3, TiO2, and ZnO) and doped with transition metals (Au, Ru, Pd Ag and In). Particle sizes, specific surface areas and phases of sensor materials were investigated by SEM, BET and XRD analyses. The metal-WO3/SnO2 thick films were prepared by screen-printing method. The measured response to hydrogen sulfide gas is defined as the ratio (Ra/R,) of the resistance of WO3ISnO2 film in air to the resistance of WO3/SnO2 film in a hydrogen sulfide gas. It was shown that the highest response and selectivity of the sensor for hydrogen sulfide by doping with 1 wt% Ru and 10 wt% WO3 to SnO2 at the optimum operating temperature of 200 degrees C.     

SAW Sensor Network Fabricated on a Polyvinylidine Difluoride (PVDF) Substrate for Dynamic Surface Profile Sensing

A combination of two 2-D sensor networks is proposed as a dynamic surface profile sensor network for biomimicing applications. A surface acoustic wave device fabricated on a polyvinylidine difluoride substrate has been investigated as the elementary 1-D bending curvature sensor used in the network. The device was tested under an injected signal and it shows the variation in amplitude and phase angle of output signal with respect to the injected signal in response to the bending curvature. These dual outputs provide opportunity to make an intelligent sensor with self error limit determination capability. Finally, a network of such sensors is proposed as a dynamic surface profile sensor     

Material and sensing properties of Pd-deposited WO3 thin films

The physicochemical and electrical properties of Pd-deposited WO3 thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature for application as a hydrogen gas sensor. WO3 thin films were deposited on an insulating material using a thermal evaporator. X-ray diffractometry (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property of the films, respectively. The deposited films grew into polycrystalline WO3 with a rhombohedral structure after annealing at 500 degrees C. Adding Pd had no effect on the crystallinity, but suppressed the growth of WO3 grains. The Pd was scattered as isolated small spherical particles of PdO2 on the WO3 thin film after annealing at 500 degrees C, while it agglomerated as irregular large particles or diffused into the WO3 after annealing at 600 degrees C. PdO2 reduction under H2 and reoxidation under air were dependent on both the Pd deposition thickness and annealing conditions. The WO3 thin film with a 2-nm-thick Pd deposit showed a good response and recovery to H2 gas at a 250 degrees C operating temperature.     

Multistrip couplers for surface acoustic wave sensor application

We present a new surface acoustic wave gas sensor utilizing a multistrip coupler on LiNbO₃ and LiTaO₃ substrates and using copper phthalocyanine as a sensor layer for NO₂. The sensor signal originates from surface conductivity changes induced by the adsorbed NO₂. This variation in conductivity leads to a changing coupling efficiency of the multistrip coupler and thus to variations in the insertion loss of the device. Rayleigh and shear wave devices with operating frequencies of 170 and 243 MHz have been tested. A sensitivity of better than 1 ppb NO₂ in air was achieved     

Surface acoustic wave gas sensor of the sorption type sensitive to the thermal properties of gases

The basic principles of a new surface acoustic wave (SAW) gas sensor are described. Being essentially a sensor of the sorption type, the proposed device possesses certain features of the thermometric SAW sensors and is not only sensitive to the vapors of volatile substances, but capable of detecting gases by their thermal properties as well. In contrast to the known thermometric SAW sensors, the proposed sensor is characterized by high temperature stability and fast response. A variant of the sensor based on a LiNbO₃ SAW delay line is described and some results of the test for detecting propane-butane mixtures are presented.     

氧化钨基半导体气体传感器的研究进展

近年来,氧化钨(WO_3)基半导体气体传感器由于可用来检测低浓度二氧化氮、二氧化硫、臭氧和氨气等气体而受到广泛关注。将WO_3基材料分为4类:纯WO_3材料、氧化物-WO_3复合材料、贵金属-WO_3复合材料和有机物-WO_3复合材料,总结近年来中外文献中WO_3基材料对不同气体的响应性能,展现近年来国内外WO_3基半导体气体传感器的研究进展。最后根据已有的工作进展,提出合成新型纳米材料、降低工作温度、提高传感器选择性应成为WO_3基半导体气体传感器下一阶段的研究重点。     

A novel integrated acoustic gas and temperature sensor

Acoustic temperature sensors have the advantages of a high-resolution frequency output and ease of integration with other acoustic sensors but require hermetic packaging to prevent sensor contamination. Surface-skimming bulk-wave (SSBW) devices have been found to be much less sensitive to surface contamination than other acoustic devices, and although their temperature response has been studied extensively, they have not been studied specifically as temperature sensors. Surface acoustic wave (SAW) based chemical sensors requiring temperature measurement or control are susceptible to temperature measurement error because the temperature cannot be measured in the same location as the chemical sensor. The objectives of this work were to examine the temperature characteristics and performance of a SSBW temperature sensor when integrated with a SAW condensation and humidity sensor in a novel design. The SSBW temperature sensor had over an order of magnitude less sensitivity to condensation and water uptake in certain polyimide films than an integrated SAW gas sensor indicating that this design is practical for sensing films in the delay path where film thickness is carefully considered.