Displacement‐current analysis of organic light‐emitting diodes

Abstract— Organic light‐emitting diodes (OLEDs) having multiple organic layers were fabricated to analyze the physical phenomena occurring in an OLED according to the amplitude of the applied voltage. The staircase voltage with both an increasing period and a constant period was designed and applied to an OLED. The displacement current began to change at a voltage where the conduction current began to change, and partly originated from the formation of space charge due to the low mobility of the majority carrier. The displacement current was shown to be constant at low voltage and decreased after showing a maximum value as the applied voltage increased. The exact voltage for the injection of two types of carriers and light emission could be obtained from the variation in the displacement current.     

Highly efficient white organic light‐emitting diodes with over 100 lm/W for next‐generation solid‐state lighting

High‐performance two‐unit all‐phosphorescent white devices on a built‐up light extraction substrate that comprised high‐index materials were studied. As a result of suitable optical and electrical design, the device showed an extremely high efficacy of 114 lm/W at 1000 cd/m². The device also showed 102 lm/W with long lifetime (LT70) of over 10,000 h at 3000 cd/m². Outstanding external quantum efficiency of almost 50% was also achieved in a flat panel with an emissive area of 25 cm². Color coordinates of the panel met the Energy Star ® criteria of solid‐state lighting with CIE (Commission Internationale de l'Éclairage) 1931 (x, y) = (0.477, 0.423), and the color rendering index was 81.     

Thin‐film barriers using transparent conducting oxides for organic light‐emitting diodes

Abstract— This study covers thin‐film barriers using inorganic barriers of transparent conducting oxides (TCOs) such as zinc oxide (ZnO) and indium tin oxide (ITO). The TCOs were fabricated using a sputtering method with a process gas of pure argon at room temperature. ITO showed better properties as a barrier than the ZnO and exhibited the electronic performance necessary to perform additional functions. The ITO has superior barrier performance because it has a lower crack density due to its partial amorphous phase. For organic/inorganic multilayer barriers, the organic underlayer decreased the water‐vapor transmission rate (WVTR) more than the organic upper layer, indicating that the planarization effect was important in reducing the WVTRs. The results of this organic/ITO multilayer barrier study are expected to be useful in finding a practical solution to OLED encapsulation.     

Organic light‐emitting diodes with enhanced out‐coupling efficiency using high‐refractive‐index glass frit

We have fabricated a novel type of substrate for organic light‐emitting diodes (OLEDs) to improve the light out‐coupling efficiency. It was fabricated by forming an excellent flat layer using a high‐refractive‐index B₂O₃‐SiO₂‐Bi₂O₃ frit glass on the light diffusive glass substrate. By using this substrate, we have sufficiently reduced the total internal reflection of OLEDs, and we successfully obtained more than 1.9 times higher light out‐coupling efficiency without spectral changes and viewing angle dependency. Furthermore, we have also successfully demonstrated 50 × 50 mm large‐area white OLEDs with this novel substrate.     

Characterization of light extraction efficiency for WOLEDS with light‐out‐coupling layer

We studied the light extraction efficiencies of white organic light‐emitting diodes with a light‐out‐coupling layer by simulations and experiments. The light extraction efficiencies estimated by the simulation were confirmed to agree well with those measured by the experiments. Moreover, we successfully obtained the high light extraction efficiency (η_OC) of 69%.     

Active‐matrix organic light‐emitting diode displays with indium gallium zinc oxide thin‐film transistors and normal,inverted, and transparent organic light‐emitting diodes

Abstract— Active‐matrix organic light‐emitting diode (AMOLED) displays have gained wide attention and are expected to dominate the flat‐panel‐display industry in the near future. However, organic light‐emitting devices have stringent demands on the driving transistors due to their current‐driving characteristics. In recent years, the oxide‐semiconductor‐based thin‐film transistors (oxide TFTs) have also been widely investigated due to their various benefits. In this paper, the development and performance of oxide TFTs will be discussed. Specifically, effects of back‐channel interface conditions on these devices will be investigated. The performance and bias stress stability of the oxide TFTs were improved by inserting a SiO^x protection layer and an N²O plasma treatment on the back‐channel interface. On the other hand, considering the n‐type nature of oxide TFTs, 2.4‐in. AMOLED displays with oxide TFTs and both normal and inverted OLEDs were developed and their reliability was studied. Results of the checkerboard stimuli tests show that the inverted OLEDs indeed have some advantages due to their suitable driving schemes. In addition, a novel 2.4‐in. transparent AMOLED display with a high transparency of 45% and high resolution of 166 ppi was also demonstrated using all the transparent or semi‐transparent materials, based on oxide‐TFT technologies.     

A 5291‐ppi organic light‐emitting diode display using field‐effect transistors including a c‐axis aligned crystalline oxide semiconductor

C‐axis‐aligned crystalline‐oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and a length of 60 nm. We fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) display applications, using CAAC‐OS FETs as the backplane.     

Improved performances in organic and polymer light‐emitting diodes using solution‐processed vanadium pentoxide as a hole injection layer

We report that a solution‐processed vanadium pentoxide (V₂O₅) layer can be utilized as an effective and stable hole injection layer in organic light‐emitting diodes and polymer light‐emitting diodes instead of polyethylene dioxythiophene : polystyrenesulfonate (PEDOT : PSS). The organic light‐emitting diode and polymer light‐emitting diode with the V₂O₅ layer have driving voltages that are 2.2 and 0.3 V lower for 1000 cd/m², respectively, than the devices with PEDOT : PSS. In addition, the devices with the V₂O₅ layer show improved operational stability compared with the devices with PEDOT : PSS. Therefore, a solution‐processed V₂O₅ layer can be utilized as an effective and stable hole injection layer instead of PEDOT : PSS.     

Efficient white organic light‐emitting diodes based on a balanced split of the exciton‐recombination zone using a graded mixed layer as an electron‐blocking layer

Abstract— Efficient white organic light‐emitting diodes with both a graded mixed layer as the blue‐emitting layer and an electron‐blocking layer, and a DPVBi:Rubrene layer as a yellow‐emitting layer have been demonstrated. The mixing of the two colors occurs due to a balanced split of the exciton‐recombination zone by the graded mixed layer serving as the electron‐blocking layer. The white organic light‐emitting diode with an ITO/2‐TNATA 30 nm/NPB 30 nm/DPVBi:Rubrene (1.0 wt.%) 5 nm/NPB:DPVBi (9:1) 150 nm/NPB:DPVBi (5:5) 75 nm/NPB:DPVBi (3:7) 75 nm/NPB:DPVBi (2:8) 75 nm/NPB:DPVBi (0.5:9.5) 75 nm/BCP 5 nm/Alq³ 30 nm/LiF 0.5 nm/Al 100 nm structure is chosen as a device with an optimal configuration among devices investigated in this study. The employment of the graded mixed layer in the device is effective in suppressing the color shift at different voltages. The white light, with a Commission Internationale d'Eclairage chromaticity coordinates of (0.33, 0.34), is obtained with an applied voltage of 10.5 V for the device. At the applied voltage, the luminance is 4882 cd/m² and the current efficiency is 5.03 cd/A.     

Development of a high‐resolution RGBW flexible display using a white organic light‐emitting diode with microcavity structure and that of a side‐roll touch panel

In this study, white organic electroluminescent devices with microcavity structures were developed. A flexible high‐resolution active‐matrix organic light‐emitting diode display with low power consumption using red, green, blue, and white sub‐pixels formed by a color‐filter method was fabricated. In addition, a side‐roll touch display was developed in combination with a capacitive flexible touch screen.     

Development of a liquid crystal with fine‐pitch light‐source display (LFD) using an organic light‐emitting diode (OLED)

Abstract— A novel display system, refered to as an LFD (liquid crystal with fine‐pitch light‐source display) is proposed. In an LFD, an auxiliary light source patterned with a fine pitch is attached to a reflective liquid‐crystal display (LCD), and a light shield is formed on the observer's side of the light source. A vertical‐alignment LCD (VA‐LCD) is attached as the reflective LCD, and an organic light‐emitting diode (OLED) is attached as the fine‐pitch light source. An LFD can produce bright, high‐contrast images under any ambient light. A test sample was built and its display characteristics confirmed.     

Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes

We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm²/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process.     

In‐pixel temperature sensor for high‐luminance active matrix micro‐light‐emitting diode display using low‐temperature polycrystalline silicon and oxide thin‐film‐transistors

We propose an in‐pixel temperature sensor using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistor (TFTs) for high‐luminance active matrix (AM) micro‐light‐emitting diode (LED) displays. By taking advantage of the different off‐current characteristics of p‐type LTPS TFTs and n‐type a‐IGZO TFTs under temperature change, we designed and fabricated a temperature sensor consists of only LTPO TFTs without additional sensing component or material. The fabricated sensor exhibits excellent temperature sensitivity of up to 71.8 mV/°C. In addition, a 64 × 64 temperature sensor array with 3T sensing pixel and integrated gate driver has also been fabricated, which demonstrates potential approach for maxing out the performance of high‐luminance AM micro‐LED display with real‐time in‐pixel temperature monitoring.     

Letter: A new compensation pixel circuit with metal oxide thin‐film transistors for active‐matrix organic light‐emitting diode displays

This paper presents a novel compensation pixel circuit for active‐matrix organic light‐emitting diode displays, in which the coupling effect mask technology is developed to compensate the threshold voltage of driving thin‐film transistor whether it is positive or negative. Twenty discrete compensation pixel circuits have been fabricated by In‐Zn‐O thin‐film transistors process. It is measured that the non‐uniformity of the proposed pixel circuit is significantly reduced with an average value of 8.6%. Furthermore, the organic light‐emitting diode emission current remains constant during 6 h continuous operation, which also confirms the validity of the proposed pixel circuit.     

Effect of MgZnO-bilayer/BA-CH3 combination interlayer on emission characteristics of MoO3/F8BT/ZnO hybrid light emitting diodes fabricated on ZnO/Ag/ZnO transparent cathode

The characteristics of MoO₃/F8BT/ZnO inorganic/organic hybrid light emitting diodes (IO-HyLEDs) fabricated on ZnO/Ag/ZnO dielectric/metal/dielectric (DMD) and conventional ZnO/ITO were investigated. The DMD had a low sheet resistance of 9 Ω/sq and a high transmittance of 90.7%. The device fabricated on DMD showed similar current density–voltage (J–V) and luminance–current density (L–J) characteristics to that on ZnO/ITO, indicating the possibility of DMD as a promising transparent conductive layer for IO-HyLEDs. The maximum luminous intensity of 237,000 cd/m² was demonstrated under pulsed condition for the DMD device. We also investigated the effect of the combination interlayer (CIL) at the F8BT/ZnO interface on the IO-HyLEDs. The CIL was composed of a Mg_0.52Zn_0.48O/Mg_0.25Zn_0.75O bilayer and a self-assembled dipole molecule (SADM) of BA-CH₃. The devices with CIL exhibited an approximately threefold enhancement of the luminous intensity and efficiency in comparison with the devices without CIL. This improvement was considered to be brought about by the enhancement of the electron injection efficiency by CIL.     

Highly efficient blue organic light‐emitting diode with high color purity using 4,4′‐N,N′‐dicarbazole‐biphyenyl (CBP) doped with 1,4‐bis[2‐(3‐N‐ethylcarbazoryl) vinyl]benzene (BCzVB)

Abstract— An efficient pure blue multilayer organic light‐emitting diode employing 1,4‐bis[2‐(3‐N‐ethylcarbazoryl)vinyl]benzene (BCzVB) doped into 4,4′‐N,N′‐dicarbazole‐biphyenyl (CBP) is reported. The device structure is ITO (indium tin oxide)/TPD (N,N′‐diphenyl‐N,N′‐bis (3‐methylphenyl)‐1,1′biphenyl‐4,4′diamine)/CBP:BCzVB/Alq₃ (tris‐(8‐hydroxy‐quinolinato) aluminum)/Liq (8‐hydroxy‐quinolinato lithium)/Al; here TPD was used as the hole‐transporting layer, CBP as the blue‐emitting host, BCzVB as the blue dopant, Alq₃ as the electron‐transporting layer, Liq as the electron‐injection layer, and Al as the cathode, respectively. A maximum luminance of 8500 cd/m² and a device efficiency of 3.5 cd/A were achieved. The CIE co‐ordinates were x = 0.15, y = 0.16. The electroluminescent spectra reveal a dominant peak at 448 nm and additional peaks at 476 nm with a full width at half maximum of 60 nm. The Föster energy transfer and, especially, carrier trapping models were considered to be the main mechanism for exciton formation on BCzVB molecules under electrical excitation.     

Design and prototype manufacturing of a feed system for Ku‐band satellite communication by using 3D FDM/PLA printing and conductive paint technology

In this study, the realization of a Ku‐band feed system for reflector antenna in satellite communication systems is presented using 3D printing and conductive paint methods. The system includes a corrugated conical horn antenna designed to operate at 10.5 to 18.5 GHz and an H‐plane waveguide diplexer to operate at 10.7 to 12.75 GHz and 17.3 to 18.4 GHz in receive (RX) and transmit (TX) bands, respectively. In the manufacturing of the structures, fused deposition modeling (FDM) technology and polylactic acid material are processed for 3D printing, where nickel and silver conductive‐based paints are used for coating purpose. The measurement results of the feed system are found to be in good agreement with simulations that the combined (nickel‐coated antenna and silver‐coated diplexer) structure has return loss of more than 10 dB and high gain performance of 12 to 17 dBi within the RX and TX bands of 10.7 to 12.75 GHz and 17.4 to 18.8 GHz, respectively; while rejection (isolation) level between TX and RX ports is higher than 60 dB. The complex structure containing several detailed shapes inside shows that this low‐cost production technique as compared to high‐cost CNC‐based metallic production technology can be used for the prototype structures or proof‐of‐concept type studies of Ku‐band systems.