掺杂钼对TiO2—x薄膜氧敏性能的影响

以钛酸丁酯为原料，无水乙醇为溶剂，添加适量稳定剂制成稳定溶胶，用浸涂法在Al2O3基片上制备TiO2薄膜，经1000℃H2下不制得TiO2-x薄膜，在钼酸铵溶胶中一定时间得到掺钼薄膜，实验结果表明掺钼薄膜元件在800℃下的氧敏感性和重复性比未掺杂时提高，TiO2-x薄膜的电阻温度稳定性好，通过对薄膜的XPS分析探讨了钼在薄膜中的作用机理。     

磷掺杂解决玻璃基TiO2光催化薄膜的钠扩散问题

采用溶胶-凝胶法在钠钙硅玻璃上制备了纯的和掺磷的TiO2薄膜,分别用AFM、XRD分析了薄膜的表面形貌和晶相组成.磷的掺入降低了TiO2锐钛矿相的结晶度,并且可以与从钠钙硅玻璃基片中扩散至薄膜的钠离子形成磷和钠的化合物,从而降低热处理过程中钠离子扩散对TiO2薄膜光催化活性产生的不利影响.利用罗丹明B作为光催化降解物质来表征TiO2薄膜的光催化活性,在相同的实验条件下,纯的TiO2薄膜的降解率为24.3%,掺磷5%的TiO2薄膜的降解率为50.3%.     

纳米TiO2薄膜的制备及其性能研究

以钛酸丁酯为前驱体,采用溶胶-凝胶工艺制备了TiO2溶胶,并用浸渍提拉法在陶瓷基体上负载了TiO2薄膜.探讨了前躯体浓度和热处理方式对TiO2薄膜性能的影响.此外,通过XRD表征,检测了TiO2的晶体结构.结果表明:500℃下煅烧的TiO2薄膜为锐钛型结构;随着前驱体浓度的增大,薄膜的亲水性能变化不大,光降解性能逐渐提高;陶瓷片每负载一层TiO2薄膜后煅烧一次,薄膜的附着力提高.     

纳米Ag2S/TiO2异质复合薄膜的制备和光电性能

以异丙醇钛(C12H28O4Ti)为主要原料合成氧化钛(TiO2)前驱体溶胶,并结合230℃水热处理得到TiO2溶胶,利用电流体动力学(EHD)技术在掺氟氧化锡导电(FTO)玻璃基片上镀膜,450℃高温煅烧制备具有多级结构锐钛矿TiO2纳米薄膜.以硝酸银(AgNO3)及硫化钠(Na2S)分别为银源和硫源,采用化学浴沉积...     

TiO2中间层对基于溶胶–凝胶法制备的VO2薄膜光学特性的影响（英文）

为了提高VO2薄膜的热致相变性能,采用复合结构与掺杂相结合的方法,首先通过溶胶–凝胶法在云母基底上制备锐钛型TiO2薄膜,再在光致亲水性处理的TiO2/云母基底上涂覆V2O5以及掺钨V2O5水溶胶,然后经热处理获得VO2/TiO2及VxW1-xO2/TiO2复合薄膜。采用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、傅立叶变换红外光谱仪(FTIR)研究薄膜的物相、表面形貌以及热致相变特性.结果表明,VO2/TiO2复合薄膜晶体生长为(011)面择优取向;VxW1-xO2/TiO2复合薄膜产生多种取向。TiO2中间层有助于使VO2薄膜生长致密,相变温度降低,更使VxW1-xO2/TiO2复合薄膜滞后温宽降至约4℃。     

铜离子掺杂对TiO2纳米颗粒膜结构和性能的影响

采用溶胶-凝胶法在普通的载玻片上制备了锐钛矿型TiO2和过渡金属Cu离子掺杂TiO2薄膜.通过XRD,UV-VIS,XPS,AFM表征了合成的薄膜,表明铜离子掺入后,薄膜变得更加致密.铜离子以Cu2O的形式存在.在紫外光照射下,TiO2薄膜表现出明显的亲水性.对于掺铜的TiO2薄膜,随着铜掺杂量的增加,铜(I)对亲水性能的抑制作用亦增强.     

玻璃基TiO_2-Fe_2O_3-CeO_2复合纳米薄膜的光催化性能研究

在溶胶-凝胶法制备的TiO2胶膜表面涂覆金属离子,通过焙烧制备TiO2-Fe2O3-CeO2复合纳米薄膜。以甲基橙为目标降解物,讨论过渡金属离子Fe3+和稀土金属离子Ce3+的掺杂对TiO2薄膜光催化活性的影响。采用SEM、XRD、EDS等表征手段对复合氧化物薄膜进行表征。结果表明:所制备的薄膜具有纳米结构;Fe3+、Ce3+单掺和Fe3+/Ce3+共掺均可提高TiO2薄膜的光催化性能,但相同条件下共掺离子的光催化活性更高。     

WO3+掺杂对纳米TiO2薄膜可见光致亲水性的影响

用溶胶-凝胶法和浸渍-提拉工艺在载波片上制备了均匀、透明的WO^3＋掺杂的纳米TiO2薄膜.用XRD、紫外-可见分光光度计分析了样品的晶相和光吸收性能,研究了WO^3＋的掺杂、掺杂量及热处理温度对薄膜可见光致亲水性的影响,并考察了薄膜在停止光照后,其亲水性能的变化.结果表明,与纯TiO2薄膜相比,掺WO^3＋的TiO2薄膜对可见光的吸收有所增强,并有一定的红移现象,且在可见光照射下,亲水性能都有提高,WO^3＋的最佳掺杂量为3%（物质的量比）;薄膜的最佳煅烧温度为773K;停止光照后,掺WO3＋的TiO2薄膜亲水性能持续的更久.     

氮掺杂TiO2薄膜的溶胶凝胶法制备及其光催化性能和亲水性的影响研究

应用溶胶凝胶方法制备了TiO2薄膜,对其在氨气气氛下热处理,通过EDS表征,成功将氮掺入薄膜中,制得了TiO2-xNx(0＜x＜1)薄膜.在制备TiO2薄膜过程中,选用180、400、500℃ 3种不同的干燥温度,在每种干燥温度条件下对薄膜进行氨气气氛下热处理,热处理温度选用400、500、600℃ 3种.为比较薄膜样品对可见光的利用率,将卤灯光源450nm以下的光滤掉,对薄膜进行光催化降解实验,得到TiO2薄膜的光催化效率是随着氮的掺入量的增加而呈现出先增加再减少的趋势.并发现经过500℃干燥,氨气气氛下热处理温度为600℃的条件下制得的薄膜光催化性能最优,薄膜对甲基橙的降解率可达4.3%,此时掺入的N不是以取代O的位置形式存在,且紫外光照射后薄膜的接触角达到0°,表现为超亲水性.     

磁控溅射制备掺银TiO2薄膜的光催化特性研究

利用交流磁控溅射设备采用金属Ti靶在石英和硅衬底制备掺银TiO2薄膜,并利用SEM,XRD及吸收光谱等方法分析测试TiO2薄膜的性质,探讨了掺银对TiO2薄膜吸收光谱的影响.并通过对甲基橙溶液浓度变化研究了掺银TiO2薄膜光催化特性,分析了掺银对TiO2薄膜增强光催化作用的工作机理,研究结果表明掺银有利于TiO2薄膜对有机物的降解作用.     

Thin films of TiO2:N for photo-electrochemical applications

Dc-pulsed magnetron sputtering from Ti target in reactive Ar+O2+N2 atmosphere was used to grow stoichiometric TiO2:N and non-stoichiometric TiO2-x:N thin films. X-ray diffraction at glancing incidence, atomic force microscopy AFM, scanning electron microscopy SEM, X-ray photoelectron spectroscopy XPS, and optical spectrophotometry were applied for sample characterization. Measurements of photocurrent versus voltage and wavelength over the ultraviolet uv and visible vis ranges of the light spectrum were performed in order to assess the performance of nitrogen-doped titanium dioxide thin films as photoanodes for hydrogen generation in photoelectrochemical cells, PEC. Undoped TiO2 and TiO2-x films were found to be composed of anatase and rutile mixture with larger anatase crystallites (25-35 nm) while the growth of smaller rutile crystallites (6-10 nm) predominated at higher nitrogen flow rates etaN2 as measured in standard cubic centimeters, sccm. Nitrogen-to-titanium ratio increased from N/Ti = 0.05 at etaN2 = 0.8 sccm for stoichiometric TiO2:N to N/Ti = 0.11 at etaN2 = 0.8 sccm for nonstoichiometric TiO2-x:N thin films. A red-shift in the optical absorbance was observed with an increase in etaN2. Doping with nitrogen improved photoelectrochemical properties over the visible range of the light spectrum in the case of nonstoichiometric samples.     

TiO2-x抗凝材料中的电化学行为研究

通过对TiO2-x薄膜在模拟人体体液中的电化学行为研究,以确定薄膜和凝血因子之间的电荷传递信息.电化学阻抗图谱(EIS)结果表明,薄膜与添加凝血因子(纤维蛋白原)的溶液之间发生不同程度电荷转移.肖特基(Mott-schottky)图谱结果显示,在引入凝血因子后薄膜的栽流子浓度发生变化.     

Terahertz dielectric response of ferroelectric Ba(x)Sr(1-x)TiO3 thin films

Terahertz time-domain spectroscopy has been used to investigate the dielectric and optical properties of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films for nominal x-values of 0.4, 0.6, and 0.8 in the frequency range of 0.3 to 2.5 THz. The ferroelectric thin films were deposited at approximately 700 nm thickness on [001] MgO substrate by pulsed laser deposition. The measured complex dielectric and optical constants were compared with the Cole-Cole relaxation model. The results show that the Cole-Cole relaxation model fits well with the data throughout the frequency range and the dielectric relaxation behavior of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films varies with the films compositions. Among the compositions of Ba(x)Sr(1-x)TiO(3) films with different Ba/Sr ratios, Ba(0.6)Sr(0.4)TiO(3) has the highest dielectric constants and the shortest dielectric relaxation time.     

退火对氧敏CeO2—x薄膜结构及电子组态的影响

用射频磁控溅射法制备了ＣｅＯ２－ｘ高温氧敏薄膜，用Ｃｅ３ｄ的ＸＰＳ谱计算了Ｃｅ＾３＋浓度，研究了退火条件对氧敏ＣｅＯ２－ｘ薄膜的晶体结构及电子组态的影响，ＸＲＤ和ＡＦＭ分析表明，薄膜经９７３Ｋ至１３７３退火后，形成了ＣａＦ２型结构的ＣｅＯ２－ｘ其晶粒大小明显依赖于退火条件和膜厚，退火温度在９７３Ｋ至１１７３Ｋ时（２００）晶面是择优取向的，在１３７３退化４ｈ后，可得到热力学稳定的ＣｅＯ２－ｘ在退火前     

不同衬底上溅射TiO2薄膜的光学性能研究

在硅片和石英上利用射频溅射法沉积了TiO2薄膜,并分别在空气中进行了退火处理。利用椭偏光谱仪对硅片上薄膜进行了椭偏测试,利用紫外-可见分光光度计对石英上薄膜进行了透射光谱测试。利用解谱软件对椭偏谱和透射谱进行了建模解谱,获得了不同基片上薄膜在不同退火温度下的折射指数和消光系数,发现和TiO2块材的光学常数也有明显的区别。通过计算得到了系列薄膜的光学带隙,带隙值范围从3.35～3.88eV,可以为薄膜态TiO2体系的光学应用、设计和相关理论研究提供一定的依据。     

Ti靶及TiO2靶溅射TiO2薄膜微观形貌、结构及光学性质研究

利用射频磁控溅射技术通过Ti靶及TiO2靶在氩氧气氛中同时溅射制备TiO2薄膜,并对所得的样品进行不同温度的退火处理。采用X射线衍射、扫描电子显微镜、拉曼光谱和吸收谱研究了不同的靶材及退火温度对TiO2薄膜晶体结构、微观形貌及光学性质的影响。结果表明:由于靶材的不同,Ti靶溅射时氧分压较低,造成薄膜中存在大量的氧缺陷,晶相发育不完善,颗粒相比TiO2靶溅射时较小,从XRD和拉曼光谱来看,Ti靶溅射得到的TiO2薄膜更有利于金红石相的形成。薄膜的透过率随退火温度的升高而降低,TiO2靶材溅射的薄膜的光学带隙随温度升高而明显降低,而Ti靶得到的薄膜的光学带隙对退火温度的依赖关系不明显。     

Effects of deposition temperature on structure and properties of mo-doped indium oxide by radio frequency magnetron sputtering

Transparent conductive oxide (TCO) thin films of Mo-doped In₂O₃ (IMO) were prepared on glass substrates by radio frequency magnetron sputtering from the 2 wt% Mo-doped In₂O₃ ceramic target. The depositions were carried out under an oxygen-argon atmosphere by varying the deposition temperature from 200 °C to 350 °C. The crystal structure and thickness of IMO thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The effects of deposition temperature on the electrical and optical transmittance properties of IMO thin films were investigated by four-point probe Hall system and UV-VIS-NIR spectrophotometer separately. The optimum deposited IMO thin films were obtained with resistivity of 6.9 × 10⁻⁴ Ω cm and carrier mobility 45 cm²v⁻¹s⁻¹ at 350 °C. The average optical transmittance of IMO films on glass substrates are over 80% in the near-infrared region.     

Low-temperature Preparation of Photocatalytic TiO2 Thin Films on Polymer Substrates by Direct Deposition from Anatase Sol

Anatase TiO2 sol was synthesized under mild conditions （75℃ and ambient pressure） by hydrolysis of titaniumn-butoxide in abundant acidic aqueous solution and subsequent reflux to enhance crystallization. At room temperature and in ambient atmosphere, crystalline TiO2 thin films were deposited on polymethylmethacrylate （PMMA）, SiO2-coated PMMA and SiO2-coated silicone rubber substrates from the as-prepared TiO2 sol by a dip-coating process. SiO2 layers prior to TiO2 thin films on polymer substrates could not only protect the substrates from the photocatalytic decomposition of the TiO2 thin films but also enhance the adhesion of the TiO2 thin films to the substrates. Field-emission type scanning electron microscope （FE-SEM） investigations revealed that the average particle sizes of the nanoparticles composing the TiO2 thin films were about 35-47 nm. The TiO2 thin films exhibited high photocatalytic activities in the degradation of reactive brilliant red dye X-3B in aqueous solution under aerated conditions. The preparation process of photocatalytic TiO2 thin films on the polymer substrates was quite simple and a low temperature route.     

Synthesis, characterization, and photocatalytic activity of TiO(2-x)N(x) nanocatalyst

Nitrogen-doped titanium dioxide powders were prepared by wet method, that is, the hydrolysis of acidic tetra-butyl titanate using aqueous ammonia solution, followed by calcination at temperatures about 350 degrees C. The catalysts exhibited photocatalytic activity in the visible light region owing to N-doping. The light absorption onset of TiO(2-x)N(x) was shifted to the visible region at 459 nm compared to 330 nm of pure TiO(2). An obvious decrease in the band gap was observed by the optical absorption spectroscopy, which resulted from N2p localized states above the valence band of TiO(2-x)N(x) (compared to TiO(2)). The TiO(2-x)N(x) catalyst was characterized to be anatase with oxygen-deficient stoichiometry by X-ray diffraction (XRD), surface photovoltage spectroscopy (SPS) and X-ray photoelectron spectroscopy (XPS). The binding energy of N1s measured by XPS characterization was 396.6 eV (TiN bonds, beta-N) and 400.9 eV (NN bonds, gamma-N(2)), respectively. The photocatalytic activity of TiO(2-x)N(x) under visible light was induced by the formation of beta-N in the structure. Photocatalytic decomposition of benzoic acid solutions was carried out in the ultraviolet and visible (UV-vis) light region, and the TiO(2-x)N(x) catalyst showed higher activity than pure TiO(2).     

FeS2/TiO2复合薄膜光电性能

采用溶液浸渍法在ITO导电玻璃表面的多孔TiO2薄膜上沉积了FeS2薄膜.使用Fe2O3粉末保护裸露在外的ITO导电膜在硫气氛中热处理后,制得了FeS2/TiO2复合薄膜.应用B531/H数显测厚指示表、数字式四探针测试仪、XJCM-8太阳电池测试仪等研究了FeS2/TiO2复合薄膜的厚度、ITO导电玻璃的电阻率以及FeS2/TiO2复合薄膜的光电性能.结果表明：此方法制得的FeS2/TiO2复合薄膜具有良好的光电性能;且ITO导电膜的电阻率变化较小.因而适宜制备色素增感太阳能电池（DSSC）.