ZnS/CdS复合窗口层对CdTe太阳能电池短波光谱响应的影响

采用磁控溅射法制备了ZnS/CdS复合窗口层,并将其应用于CdTe太阳能电池。对所制备薄膜的形貌和结构等进行了研究。测试了具有不同窗口层的CdTe太阳电池的量子效率和光Ⅰ-Ⅴ特性,分析了ZnS薄膜制备条件对CdTe电池器件性能影响;研究了CdS薄膜厚度和ZnS/CdS复合窗口层对短波区透过率以及CdTe太阳电池的光谱响应的影响。着重研究了具有ZnS/CdS复合窗口层的CdTe太阳电池的短波光谱响应。结果表明,CdS窗口层厚度从100 nm减至50 nm后,其对短波区光子透过率平均提高了18.3%,CdTe太阳电池短波区光谱响应平均提高了27.6%。衬底温度250 ℃条件下制备的ZnS晶粒尺寸小于室温下制备的ZnS。具有ZnS/CdS复合窗口层的CdTe电池中,采用衬底温度250 ℃沉积ZnS薄膜来制备窗口层的电池器件,其性能要优于室温下沉积ZnS制备窗口层的电池器件。这说明晶粒尺寸的大小对电子输运有一定影响。在相同厚度CdS的前提下,具有ZnS/CdS复合窗口层的CdTe电池比具有CdS窗口层在短波的光谱响应提高了约2%。这说明ZnS/CdS复合窗口层能够做到减少对短波光子的吸收,从而使更多的光子被CdTe电池的吸收层吸收。     

核壳结构CdS/ZnS纳米微粒的制备与光学特性

用微乳液法制备CdS纳米微粒 ,以ZnS对其进行表面修饰 ,得到具有核壳结构的CdS/ZnS纳米微粒 .采用X射线衍射 (XRD)、透射电镜 (TEM )表征其结构、粒度和形貌 ,紫外 可见吸收光谱 (UV)、光致发光光谱(PL)表征其光学特性 .制得的CdS近似呈球形 ,直径为 3.3nm ;以XRD和UV证实了CdS/ZnS核壳结构的实现 .研究了不同ZnS壳层厚度对CdS纳米微粒光学性能的影响 ,UV谱表明随着壳层厚度的增加纳米微粒的吸收带边有轻微的红移 ,同时短波吸收增强 ;PL谱表明壳层ZnS的包覆可减少CdS纳米微粒的表面缺陷 ,带边直接复合发光的几率增大 ,具有合适的壳层厚度时发光效率大大提高 .     

低压-MOCVD方法制备CdS-ZnS应变多量子阱

本文报道了用低压(LP)-MOCVD方法制备CdS-ZnS应变多量子阱结构.通过X-射线衍射谱证实了所制备的样品具有比较好的多层结构,并通过77K下的光致发光(PL)光谱,观测到了大的垒层对电子的限制效应及由大的应变引起的阱层带边变化所导致的发光峰蓝移.     

HgCdTe长波光伏探测器的表面漏电流及1/f噪声研究

在同一Hg_1-xCd_xTe晶片上(x=0217)制备了单层ZnS钝化和双层 （CdTe+ZnS）钝化的两种器件，对器件烘烤前后的暗电流和1/f噪声进行了测试，烘烤 前发现，ZnS钝化的器件在反偏较大时具有较大的表面隧道电流，而这种表面漏电流是ZnS钝 化器件具有较大1/f噪声电流的原因，通过高分辨x射线衍射中的倒易点阵技术（recipr ocal space mapping,RSM）研究了单双层钝化对HgCdTe外延层晶格完整性的影响，发现单层 ZnS钝化的HgCdTe外延层产生了大量缺陷，而这些缺陷正是ZnS钝化器件具有较大表面漏电流 和1/f噪声的原因. 经过高温烘烤后，ZnS钝化的器件暗电流和1/f噪声增加，而双 层钝化器件经过高温烘烤后性能提高. RSM的研究表明，高温烘烤后ZnS钝化的HgCdTe外延层 产生大量缺陷，这些缺陷正是单层钝化器件表面漏电流和1/f噪声电流增加的原因. 关键词： HgCdTe 光伏探测器 钝化 表面漏电流 1/f噪声 倒易点     

ZnS overlayer on in situ chemical bath deposited CdS quantum dot-assembled TiO2 films for quantum dot-sensitized solar cells

ZnS overlayers were deposited on the CdS quantum dot (QD)-assembled TiO₂ films, where the CdS QDs were grown on the TiO₂ by repeated cycles of the in situ chemical bath deposition (CBD). With increasing the CdS CBD cycles, the CdS QD-assembled TiO₂ films were transformed from the TiO₂ film partially covered by small CdS QDs (Type I) to that fully covered by large CdS QDs (Type II). The ZnS overlayers significantly improved the overall energy conversion efficiency of both Types I and II. The ZnS overlayers can act as the intermediate layer and energy barrier at the interfaces. However, the dominant effects of the ZnS overlayers were different for the Types I and II. For Type I, ZnS overlayer dominantly acted as the intermediate layer between the exposed TiO₂ surface and the electrolyte, leading to the suppressed recombination rate for the TiO₂/electrolyte and the significantly enhanced charge-collection efficiency. On the contrary, for Type II, it dominantly acted as the efficient energy barrier at the interface between the CdS QDs and the electrolyte, leading to the hindered recombination rate from the large CdS QDs to the electrolyte and thus enhanced electron injection efficiency.     

Preparation and characterization of ZnS/CdS bi-layer for CdTe solar cell application

In this work, bilayer ZnS/CdS film was prepared as an improved window layer of CdTe solar cell. TEM was used to observe the cross section of the bilayer structure. The total thickness of ZnS/CdS film was about 60 nm, which could allow more photons to pass through it and contribute to the photocurrent. Optical properties of the bilayers were investigated using UV–vis spectroscopy. Compared with poor transmission of standard CdS film in the short wavelength range of 350–550 nm, the transmission of ZnS/CdS was improved and reached above 50%. The ZnS/CdS was annealed with CdCl₂. X-ray photoelectron spectroscopy (XPS) was used to investigate its chemical properties. A possible diffusion between CdS and ZnS was observed after annealing. The efficiency of standard CdS/CdTe solar cell was 9.53%. The device based on ZnS/CdS window layer had a poor 6% efficiency. With annealing treatment on ZnS/CdS layer, the performance was improved and reached 10.3%. In addition, the homogeneity of solar cell performance was improved using ZnS/CdS window layer. A thin ZnS layer was quite effective to reduce the possible shunt paths and short parts of window layer and consequently contributed to fabrication of a homogeneous CdTe solar cell.     

Synthesis, surface morphology, and optical and structural properties of CdS and ZnS nanoparticles

Synthesis of CdS and ZnS nanoparticles in reverse micelles and organic solvents has been carried out. Particles with a hexagonal structure 2–5 nm in size are formed during synthesis. Maintaining the reaction mixture at room temperature leads to the formation of nanoparticles with a cubic structure 100–150 nm in size. The changes in the optical properties of CdS and ZnS nanoparticles, depending on the synthesis method and conditions and on the precursors used, have been investigated. The luminescence characteristics of local surface defects of nanoparticles depend weakly on nanoparticle sizes. The dependence of the fluorescence and phosphorescence intensity of nanoparticle surface defects on the polarity of surrounding solution is demonstrated; thus, these particles can be used as polarity indicators.     

CdS/ZnS core–shell nanoparticles in arachidic acid LB films

Core–shell CdS/ZnS nanoparticles in arachidic acid film were prepared through a novel Langmuir–Blodgett (LB) approach. Post-deposition treatment of the precursor LB multilayers of cadmium arachidate with H₂S gas followed by intercalation of Zn²⁺ ions and further sulfidation result in the formation of CdS/ZnS nanoparticles in the LB film. The formation of these nanoparticles and resulting changes in layered structures were studied by FTIR and X-ray reflection measurements. The optical properties were studied using UV–vis absorption and photoluminescence spectroscopy. A red-shift in the absorption spectrum and enhancement of CdS excitonic emission together with reduction of surface states emission suggest that after the intercalation step, a thin layer of ZnS surrounds the CdS nanoparticles, thus forming a core–shell structure. Subsequent to the second sulfidation, a further red-shift in absorption suggests the formation of a thicker ZnS coating on CdS. Electron diffraction of CdS nanoparticles coated with thicker ZnS showed the diffraction patterns of only ZnS, as expected for core–shell structures.     

HgTe/CdS/ZnS多壳层量子点的制备与表征

采用一种简单的方法合成HgTe/CdS/ZnS多壳层量子点。首先,以1-硫代甘油为稳定剂,在水相溶液中制备出HgTe核量子点;然后,采用外延生长法依次在HgTe核量子点表面包覆CdS和ZnS壳层,合成出最终具有稳定近红外发光的HgTe/CdS/ZnS多壳层量子点。该合成方法仅需3个步骤,具有操作简单、成本低廉的优点。实验结果显示,当反应温度为90 ℃、反应溶液pH为11.0、反应加热回流时间为4 min时,HgTe/CdS/ZnS多壳层量子点具有最高荧光量子产率36%。     

高功率、高效率808nm半导体激光器阵列

通过设计高效率808 nm非对称宽波导外延结构,减少P型波导层和包层的自由载流子光吸收,实现腔内光吸收损耗为0.63 cm~(-1).制备的808 nm半导体激光器阵列在室温25?C下,实现驱动电流135 A,工作电压1.76 V,连续输出功率大于150 W,斜率效率高达1.25 W/A,中心波长809.3 nm,器件最高电光转换效率为65.5%,这是目前国内报道的808 nm半导体激光器阵列的最高电光转换效率,达到国际同类器件最好水平.     

Structural, electrical and optical properties of ZnS films deposited by close-spaced evaporation

ZnS films have been deposited on glass substrates by close-spaced evaporation (CSE) technique. The films were grown at different temperatures in the range, 200-350 °C. The layers have been characterized with X-ray diffractometer (XRD), atomic force microscope (AFM), energy dispersive analysis of X-rays (EDAX) and optical spectrophotometer to evaluate the quality of the layers for photovoltaic applications. The studies showed that the optimum substrate temperature for the growth of ZnS layers was 300 °C. The films grown at these temperatures exhibited cubic structure with nearly stoichiometric composition. The AFM data revealed that the films had nano-sized grains with a grain size of ∼40 nm. The optical studies exhibited direct allowed transition with an energy band gap of 3.61 eV. The other structural and optical parameters such as lattice stress, dislocation density, refractive index and extinction coefficient were also evaluated. The temperature-dependent conductivity measured in the range, 303-523 K showed a change in the conduction mechanism at 120 °C. The activation energy values evaluated using the temperature dependence of electrical conductivity are 7 and 29 meV at low and high temperature regions, respectively.     

Al-doped ZnS layers synthesized by solution growth method

ZnS is one of the potential candidates as a window/buffer layer for solar photovoltaic applications. Al-doped ZnS nanocrystalline films were grown by a simple and economic process, chemical solution growth method. The layers were prepared for different Al-dopant concentrations that vary in the range, 0-10 at. %. The effect of Al-doping on the composition, structure, optical, electrical and photoluminescence properties of the synthesized layers was determined using appropriate techniques. The elemental composition of a typical sample with 6 at. % ‘Al’ in ZnS was Zn = 44.9 at. %, S = 49.8 at. % and Al = 5.3 at. %. The films were nanocrystalline in nature and showed (111) plane of ZnS as the preferred orientation for all the doping concentrations. The layers with 6 at. % of Al showed a crystallite size of ∼9 nm. The FTIR studies confirmed the presence of ZnS in the layers. The layers showed an average transmittance of ∼75% in the visible region. The change of photoluminescence behaviour with dopant concentration was also studied. The electrical resistivity was considerably decreased from 10⁷ Ωcm to 10³ Ωcm with Al-doping. The detailed analysis of results will be presented and discussed.     

硅基低位错密度厚锗外延层的UHV/CVD法生长

利用超高真空化学气相淀积系统, 基于低温缓冲层和插入应变超晶格的方法, 在Si(100)衬底上外延出厚度约为880 nm的纯Ge层. 采用X射线双晶衍射、高分辨透射电镜、原子力显微镜和光致发光谱分别表征了其结构及光学性质. 测试结果显示外延Ge的X射线双晶衍射曲线半高宽为273", 表面均方根粗糙度为0.24 nm, 位错密度约为1.5×10⁶ cm². 在室温下观测到外延Ge的直接带跃迁光致发光, 发光峰值位于1540 nm. 表明生长的Si基Ge材料具有良好的结晶质量, 可望在Si基光电子器件中得到应用.     

Some properties of CdS/p-Ge heterojunctions grown by chemical transport

Some physical properties of CdS/p-Ge heterojunctions made by chemical vapour deposition of single crystal CdS epitaxial layers on (111)p-type nearly degenerate Ge substrates are reported. the equilibrium energy band diagram is discussed in the light of junction capacitance measurements as a function of frequency and of the reverse bias. The presence of interface states in the CdS band gap, with a density maximum at 1.1 eV below the equilibrium Fermi level has been shown. A model for the acceptor nature of the electronic states of misfit dislocations in CdS is suggested. The temperature dependence of theI-V characteristics has been measured in the temperature range 77–300 K. Models for the current flow in both direct and reverse bias conditions are discussed, taking into account the tunneling-recombination or generation-tunneling mechanisms throúgh interface states.     

Effect of ZnS layers on optical properties of prepared CdS/TiO<Subscript>2</Subscript> nanotube arrays for photocatalyst

The TiO₂ nanotube arrays (TiO₂ NTAs) prepared by re-oxidation were chosen as basement. The NTAs prepared through re-oxidation show smoother surface and more uniform tube mouth on large scale compared with the first as-grown one. We use successive ionic layer adsorption and reaction method to deposit quantum dots (ZnS and CdS) onto the sample successively. The findings reveal that two kinds of quantum dots (～10 nm) distribute regularly and the nanotube mouth is open. From the UV–Vis absorption spectrum of samples, the red shift occurs after the sedimentation of the two quantum dots, which proves that the double modification can expand the absorption to 650 nm. Among all specimens, the sample produced by co-deposition has the highest speed of catalytic efficiency of 90.7% compared with bare TiO₂ NTAs (52.9%) and just CdS QDs sensitized sample (65.8%). In the test of photocatalysis durability, the decay percentages of CdS/TiO₂ NTAs and ZnS/CdS/TiO₂ NTAs were 35.8 and 48.4%, respectively, which means that the ZnS passivation layer plays a crucial role in enhancing photocatalytic activities.     

Effects of passivation treatment on the surface stability in indium-doped Hg0.8Cd0.2Te epilayers grown on p-Cd0.96Zn0.04Te substrates

Passivation treatment on indium-doped Hg_0.8Cd_0.2Te epitaxial layers grown on p-Cd_0.96Zn_0.04Te substrates by molecular beam epitaxy has been performed in order to improve the surface stability of the Hg_0.8Cd_0.2Te layers. Room-temperature capacitance–voltage measurements clearly revealed metal-insulator–semiconductor (MIS) behavior for the Al/ZnS/passivated Hg_0.8Cd_0.2Te layer/Cd_0.96Zn_0.04Te diodes. The fast state density and the fixed charge density of the Al/ZnS/passivated Hg_0.8Cd_0.2Te/Cd_0.96Zn_0.04Te diode with a sulfur-treated Hg_0.8Cd_0.2Te layer were smaller than those with a chemically oxidized Hg_0.8Cd_0.2Te layer. The interface state density at the ZnS/sulfur-treated Hg_0.8Cd_0.2Te interface were low at 10¹¹ eV⁻¹ cm⁻² at the middle of the Hg_0.8Cd_0.2Te energy gap. These results indicate that the Hg_0.8Cd_0.2Te epilayer is significantly passivated by sulfur treatment and that the passivated Hg_0.8Cd_0.2Te layers can be used for Hg_1−xCd_xTe-based MIS diodes and MIS field-effect transistors.     

Synthesis of high quality and monodisperse CdS:Mn/ZnS and CdS:Mn/CdS core–shell nanoparticles

CdS:Mn²⁺/ZnS and CdS:Mn²⁺/CdS core–shell nanoparticles were synthesized in aqueous medium via chemical precipitation method in an ambient atmosphere. Polyvinylpyrrolidone (PVP) was used as a capping agent. The effect of the shell (ZnS and CdS) thickness on CdS:Mn²⁺ nanoparticles was investigated. Inorganically passivated core/shell nanocrystals having a core (CdS:Mn²⁺) diameter of 4 nm and a ZnS-shell thickness of ∼0.5 nm exhibited improved PL intensity. Optimum concentration of doping ions (Mn²⁺) was selected through optical study. For all the core–shell samples two emission peaks were observed, the first one is band edge emission in the lower wavelength side due to energy transfer to the Mn²⁺ ions in the crystal lattice; the second emission is characteristic peak of Mn²⁺ ions (⁴T₁ → ⁶A₁). The XRD, TEM and PL results showed that the synthesized core–shell particles were of high quality and monodisperse.     

核/壳结构ZnS : Mn/CdS纳米粒子的制备及发光

利用溶剂热法制备了Mn离子掺杂的ZnS纳米粒子(ZnS : Mn),利用沉淀法对ZnS ∶ Mn纳米粒子进行了不同厚度的CdS无机壳层包覆。采用X射线衍射(XRD)、透射电子显微镜(TEM)、X射线光电子能谱(XPS)及光致发光(PL)光谱等手段对样品进行了表征。TEM显示粒子为球形,直径大约在14~18 nm之间。由XRD结果可以看出CdS壳层的形成过程受到了ZnS ∶ Mn核的影响,导致其结晶较差。XRD和XPS测量证明了ZnS : Mn/CdS的核壳结构。随着CdS壳层的增厚,样品的发光强度呈现一直减弱的现象。     

Development of gel polymer electrolytes for application in quantum dot-sensitized solar cells

A methylcellulose–polysulfide gel polymer electrolyte has been prepared for application in quantum dot-sensitized solar cells (QDSSCs) having the configuration FTO/TiO₂/CdS/ZnS/SiO₂/electrolyte/Pt(cathode). The electrolyte with the composition of 30.66 wt.% methylcellulose, 67.44 wt.% Na₂S, and 1.90 wt.% sulfur exhibits the highest conductivity of 0.183 S cm^?1 with the lowest activation energy of 6.14 kJ mol^?1. CdS quantum dot sensitizers have been deposited on TiO₂ film via the successive ionic layer absorption and reaction (SILAR) method. The QDSSC fabricated using the highest conducting electrolyte and CdS QD prepared with five SILAR cycles exhibits a power conversion efficiency (PCE) of 0.78%. After deposition of zinc sulfide (ZnS) and silicon dioxide SiO₂ passivation layers, the PCE of the QDSSC with photoanode arrangement of TiO₂/CdS(5)/ZnS(2)/SiO₂ increased to 1.42%, an improvement in performance by 82%.     

Oxygen-phase-state changes in ZnS single crystals annealed in vapors of the constituents

Exciton reflection and emission spectra and edge emission have been investigated in ZnS sinle crystals grown from the melt and containing oxygen and then subjected to annealing in vapors of the constituents. The study of optical properties of the crystals cooled to 77°K were conducted in parallel with structural investigations of the crystals using proton and x-ray diffraction analyses. Based on the experimental data it was concluded that in the ZnS lattice, oxygen exists in a number of phase states: as part of a ZnS·O solid solution in the host lattice; as a precipitate from the saturated solid solutionβ=ZnS·O_sat; as an impurity atmosphere in the vicinity of packing faults; as ZnO precipitated on dislocations. The effect of oxygen in these various phase states on the exciton spectra and edge emission of ZnS was investigated. It was shown that oxygen is not very mobile in ZnS crystals annealed in sulfur vapor and it becomes concentrated mainly at packing defects. This leads to an increase in the concentration of packing defects and makes possible a transition from the cubic to the hexagonal modification of ZnS. The concentration of oxygen at packing defects leads to the appearance in reflection spectra and in the edge emission spectra ofα-ZnS of an additional hexagonal band located on the long wavelength side which is caused by the formation ofβ-ZnS·O solid solution. Oxygen diffuses quite rapidly through ZnS which has been annealed in zinc vapor and it precipitates from the crystals as the distinct phases ZnO orβ-ZnS · O_sat, and as a result the defect content of the hostα-ZnS lattice decreases. The concentration of the ZnO-phase is quite small and its exciton bands do not appear in the reflection spectra. The precipitation of the solid solution in the form of the phaseβ-ZnS · O_sat leads to the appearance of an additional long wavelength absorption edge in the 334 to 335 nm region (at 77°K). In addition, because single crystals of ZnS annealed in zinc vapor contain a large concentration of sulfur vacancies, there occurs a rather rapid formation of the solid solution on the layers ofα-ZnS close to the surface; this leads to a broadening and a shift toward longer wavelengths of the sphalerite exciton spectra. A similar shift is observed for the edge emission band ofα-ZnS. When the crystals are aged, theα-ZnS·O solid solution decomposes and the bands assume the standard sphalerite positions. Changes in the intensity of edge and exciton emission were investigated taking into account changes in the phase state of oxygen in the crystals.