用高分辨透射电子显微技术研究0.94（Na（1/2）Bi（1/2））TiO3–0.06BaTiO3的有序结构

用高分辨透射电子显微技术（high resolution transmission electron microscopy,HRTEM）和选区电子衍射（selected area electron diffraction,SAED）技术对具有A位复合钙钛矿结构的0.94（Na1/2Bi1/2）TiO3（BNT）–0.06BaTiO3（BNBT6）陶瓷的显微结构进行了深入研究。沿[001],[011]和[111]3个晶带轴方向的SAED花样分析结果表明：A位Bi3＋和Na＋可以形成2种不同的有序结构——1/2{110}和1/2{111}超结构。据此,建立了BNT的1/2{110}和1/2{111}有序结构模型,其中1/2{110}型有序是由Bi^3＋层和Na^＋层沿[110]方向交替排列而形成,1/2{111}型有序是由Bi^3＋层和Na^＋层沿[111]方向交替排列而形成。利用多层法,通过计算机模拟了1/2{111}有序结构沿[001],[011]和[111]3个方向的HRTEM像,与实验拍摄的HRTEM像对照,验证了所建立的1/2{111}有序结构模型的正确性。同时,采用快速Fourier变换（fast Fourier transformation,FFT）技术,由1/2（330）和1/2（330）超晶格反射斑点获得的一维晶格像,揭示了沿[110]方向局部Bi3＋层和Na＋层扭曲导致的位错和反相畴界（anti-phase boundary,APB）,APB的存在表明结构中存在着Bi3＋层和Na＋层沿[110]方向的交替排列,证实BNBT6中存在着1/2{110}有序结构。BNBT6有序结构的HRTEM研究表明：A位Bi^3＋和Na^＋的化学有序是导致超晶格反射的主要原因。     

(Bi1/2Na1/2)TiO3-BaTiO3系无铅压电陶瓷结构与性能的研究

采用XRD,SEM,HRTEM等分析技术对(1-x)(Bi1/2Na1/2)TiO3-xBaTiO3(简称为BNBT)(x为0.04,0.06,0.08,0.10)进行了结构与性能的研究,并主要分析了x为0.06,即0.94(Bi1/2Na1/2)TiO3-0.06BaTiO3(简称为BNBT6)在不同烧结温度下的结构形态及其对性能的影响.结果表明:(1-x)(Bi1/2Na1/2)TiO3-xBaTiO3系统具有很窄的烧结范围.另外,加入过量的Ba2+,能起到阻碍晶粒长大的作用.     

织构化（Na_（1/2）Bi_（1/2））TiO_3-BaTiO_3无铅压电陶瓷晶粒定向生长机制

以熔盐法合成的片状SrTiO3晶粒为模板,利用模板晶粒生长（TGG）技术制备晶粒沿[001]方向为取向的0.94（Na1/2Bi1/2）TiO3-0.06BaTiO3（简写为BNBT6）无铅压电陶瓷,采用X线衍射仪（XRD）、扫描电子显微镜（SEM）对陶瓷试样进行表征,采用透射电子显微镜（TEM）观察SrTiO3与BNBT6基体界面的微观结构.结果表明,BNBT6陶瓷晶粒定向生长过程分为2个阶段：首先是异质外延生长阶段,即在片状模板晶粒的诱导下,BNBT6基体粉体在SrTiO3模板晶粒表面外延生长,形成与模板取向完全一致的单晶生长层的过程;其次是同质外延生长阶段,即单晶生长层生成后吞噬BNBT6基体粉体逐步生长得到各向异性的高取向BNBT6陶瓷的过程.     

(Na1/2Bi1/2)TiO3系无铅压电陶瓷材料研究进展

概述了近年来国内外(Na1/2Bi1/2)TiO3(BNT)基无铅压电陶瓷的研究近况。主要介绍BNT陶瓷及BNT基陶瓷的研究工作。通过非化学计量掺杂及A位空位的存在，使BNT基陶瓷的电性能得到了较大的提高。     

(1-x)(Bi1/2Na1/2)0.900Ba0.088Sr0.012TiO3-x(Bi1/2K1/2)TiO3无铅压电陶瓷的电学和力学性能

利用常规烧结方法制备出了多种A位离子掺杂的钛酸铋纳[(Bi1/2Na1/2)TiO3,BNT]无铅压电陶瓷.对BNT基陶瓷的电学性能和力学性能进行了研究.在(1-x)(Bi1/2Na1/2)0.900Ba0.088Sr0.012TiO3-x(Bi1/2K1/2)TiO3(x=0-0.14)陶瓷体系中,当x=0.10时,可获得最大压电常数(168pC/N).在1 kHz,这种陶瓷的介电常数、介电损耗和平面机电耦合系数分别为1 221,0.0361和0.2281.Curie温度随x的增加先增加,当x=0.12时,达到最高值(300℃),随后,当x值进一步增加,Curie温度降低.该种无铅压电陶瓷的Vickers硬度和断裂韧性分别为5.0GPa和2.0MP·m1/2,均高于Pb(Zr,Ti)O3陶瓷.     

(Bi_(1/2)Na_(1/2))TiO_3BaTiO_3系无铅压电陶瓷工艺的研究

详细探讨了在制备(Bi1/2Na1/2)TiO3 BaTiO3(abbr.BNBT)系无铅压电陶瓷的过程中,合成条件Ty和烧结温度Ts对材料压电介电性能的影响,确定了较好的制备BNBT系压电陶瓷的工艺条件,并且系统地研究了(1-x)·(Bi1/2Na1/2)TiO3 xBaTiO3(x=0 02、0 04、0 06、0 08、0 10)的性能。XRD结构分析发现系统的相界在x=0 06,此时d33等压电介电性能参数达到最佳值。     

Na_（1/2）Bi_（1/2）TiO_3基无铅压电体系退极化行为的研究进展

简述了钛酸铋钠[Na1/2Bi1/2TiO3,BNT]的相变过程及其退极化现象,介绍了退极化温度的确定方法,概述了NBT基复合体系准同型相界（MPB）附近的退极化行为,总结了有关退极化温度影响机制的几种观点。借鉴PbTiO3基高温压电体系的研究,提出采用具有小允差因子的Bi基钙钛矿Bi（B′B″）O3作为第二组元,与BNT形成新型无铅压电复合体系,以求提高MPB处的退极化温度,并简述了相关的研究报道。     

Ba-,Sr-基A(B′1/3B″2/3)O3型复合钙钛矿化合物的结构(上)有序行为及理论研究

比较全面地介绍了A(B′1/3B″2/3)O3型复合钙钛矿系化合物的有序结构及其对介电性能的影响,阐明了12长程有序、11短程有序形成的机理及其特征.12有序是B′与B"离子以"B′B"B"…"的比例沿<111>方向交替排列;而11有序是B′和B"离子沿<111>方向呈11层状交替排列,一般认为B位离子形成(B′2/3B"1/3)1/2B"1/2为11的混合型有序排列,即沿<111>方向,(B′2/3B"1/3)1/2和B"1/2呈相间层状排列;长程有序和短程有序可同时存在并在一定条件下相互转化.介绍了对A(B′1/3B"2/3)O3型复合钙钛矿系化合物有序结构的理论研究成果静电模型和第一性原理.     

B a-,Sr-基A(B''''_(1/3)B″_(2/3))O_3型复合钙钛矿化合物的结构(上)有序行为及理论研究

比较全面地介绍了A(B'1/3B″2/3)O3型复合钙钛矿系化合物的有序结构及其对介电性能的影响,阐明了1∶2长程有序、1∶1短程有序形成的机理及其特征。1∶2有序是B'与B″离子以“B'∶B″∶B″…”的比例沿<111>方向交替排列;而1∶1有序是B'和B″离子沿<111>方向呈1∶1层状交替排列,一般认为B位离子形成(B'2/3B″1/3)1/2∶B″1/2为1∶1的混合型有序排列,即沿<111>方向,(B'2/3B″1/3)1/2和B″1/2呈相间层状排列;长程有序和短程有序可同时存在并在一定条件下相互转化。介绍了对A(B'1/3B″2/3)O3型复合钙钛矿系化合物有序结构的理论研究成果:静电模型和第一性原理。     

Bi12SiO20晶体的生长习性

分别沿[001],[110]及[111]3种方向用提拉法生长Bi_(12)SiO_(20)晶体,研究了生长条件对晶体形态的影响。应用PBC理论,分析了各晶面的特性:{100}和{110}为F面,{211}为S面,{111}属于K面。并依据连接能的计算,得到晶面的重要性顺序。PBC解析形态与在特定条件下生长的晶体形态相当一致。     

Broadband dielectric spectroscopy of PbMg1/3Nb2/3O3–PbSc1/2Nb1/2O3 ceramics

Broadband dielectric spectroscopy results of various ordered and disordered (1 ? x)Pb(Mg_1/3Nb_2/3)O₃–(x)Pb(Sc_1/2Nb_1/2)O₃ (PMN–PSN) ceramics are investigated in the temperature range from 80 K to 300 K and frequency range from 20 Hz to 2 THz. Dielectric dispersion is very broad and in the ferroelectrics case (x = 1, 0.95) consists of two parts: low-frequency part caused by ferroelectric domains and higher frequency part caused by soft mode. The relaxational soft mode exhibits pronounced softening close to phase transition temperature, as it is typical for order–disorder phase transitions. By substituting Sc³⁺ by Mg²⁺ in PMN–PSN ceramics relaxation slows down, and for relaxors (x = 0.2) the most probable relaxation frequency decreases on cooling according to Vogel–Fulcher law.     

Ferroelectric Ceramics in the PbMg1/3Nb2/3O3-PbCd1/3Nb2/3O3 System

Solid solutions (1-x)PbMg_1/3Nb_2/3O₃ + xPbCd_1/3Nb_2/3O₃ with x = 0-0.30 are investigated with purpose to work out a capacitor ceramics with good dielectric properties and low sintering temperature. It is found that the perovskite phase forms at sintering near to 980°C and begins to decompose at higher temperatures. When x grows from 0 to 0.30, the Curie temperature linearly grows from -10°C to +25°C, the dielectric permittivity ε_m in the Curie point T_C decreases from 18000 to 6800 and the phase transition becomes more diffused. The dielectric permittivity at room temperature is rather high and the temperature stability is improved. The system is of interest, because it can serve as a base for working out some ceramic materials for capacitors with low sintering temperature, which needs of no special atmosphere at burning.     

Large strain response with low driving field in Bi1/2Na1/2TiO3–Bi1/2K1/2TiO3–Bi(Mg2/3Nb1/3)O3 ceramics

The (1?x)(0.8Bi_1/2Na_1/2TiO₃–0.2Bi_1/2K_1/2TiO₃)?xBiMg_2/3Nb_1/3O₃ (100xBMN) ternary solid solutions were designed and prepared using a conventional solid‐state reaction. Temperature and compositional dependent ferroelectric, piezoelectric, dielectric features, and structural evolution were systematically studied. At the critical composition of 2BMN, a large bipolar strain of 0.43% was achieved at 55 kV/cm, and the normalized strain reaches to 862 pm/V at a low driving electric field of 40 kV/cm. It was found that the substitution of BiMg_2/3Nb_1/3O₃ induces a transformation from ferroelectric to relaxor phase by disrupting the long range ferroelectric order. Therefore, as the external electric field was applied, a relaxor‐ferroelectric phase transition will be induced. This is contributed to the giant strain. The results above suggest that such a ternary composition is a promising candidate for application to actuator.     

Negative thermal expansion of (Al1/3Fe1/3Cr1/3)2(Mo1/2W1/2)3O12 (AFCMW) and low thermal expansion of AFCMW-(Co1/2Ni1/2)(Mo1/2W1/2)O4 with high entropy

A₂Mo₃O₁₂ (A-Al, Fe, Cr) have large negative thermal expansion (NTE) coefficients and structural stability but high phase-transition temperatures (PTTs). Herein, we prepared (Al_1/3Fe_1/3Cr_1/3)₂(Mo_1/2W_1/2)₃O₁₂ (AFCMW), and found it to have a low NTE coefficient and a low PTT. Furthermore, combination of AFCMW with (Co_1/2Ni_1/2)(Mo_1/2W_1/2)O₄ (CNMW) afforded an AFCMW–CNMW composite with a low thermal expansion (LTE). We determined that the PTT reductions in A₂Mo₃O₁₂ are largely due to the high-entropy effect resulting from the introduction of different ions into its A and M sites. Moreover, we found that the low LTE of the AFCMW–CNMW composite is attributable to the opposite thermal expansion behaviours of AFCMW and CNMW. We suggest that the suppressed thermal expansion during the phase transition process of the AFCMW–CNMW composite could be derived from the high-entropy effect resulting from its increased diversity of polyhedra, the influence of Co²⁺ and Ni²⁺ dopants, and CNMW-induced lattice distortion.     

ICP-AES原子发射分析法检测LiNi1/3Co1/3Mn1/3O2中Ni含量

建立了一套可用于实际电池及材料生产、研制的电池材料镍钴锰酸锂中Ni的测定方法。在解决了原子发射法的基体效应及光谱干扰问题后,选定合适的分析条件,进行方法的准确度和精密度实验,数据结果显示方法可以满足实际分析工作的要求。     

Electrical properties and temperature stability of SrTiO3-modified (Bi1/2Na1/2)TiO3-BaTiO3-(K1/2Na1/2)NbO3 piezoceramics

SrTiO₃-modified lead-free piezoelectric ceramics, (0.93-x)Bi_0.5Na_0.5TiO₃-xSrTiO₃-0.06BaTiO₃-0.01 K_0.5Na_0.5NbO₃ [(BNT-xST)-BT-KNN, x = 0-0.06], were prepared using a conventional solid-state reaction method. The XRD structure analysis and electric properties characteristics revealed the ST-induced phase transformation from the ferroelectric phase to the relaxor phase and their coexistence state. Benefiting from the ST-destructed ferroelectric long-range orders, the high normalized strain value of 600 pm/V was obtained in the (BNT-0.02ST)-BT-KNN ceramic at 5 kV/mm. The ST-generated relaxor phase was found to have a constructive effect on improving the temperature stability and restraining the hysteresis of the electric-field-induced strain. The normalized strain of (BNT-0.06ST)-BT-KNN ceramics could be kept at a high value ~337 pm/V at elevated temperature up to 120°C.     

MgF2包覆对正极材料LiNi1/3Co1/3Mn1/3O2性能的影响

通过浸渍法在正极材料LiNi1/3Co1/3Mn1/3O2的表面包覆MgF2,通过XRD、SEM、交流阻抗（EIS）分析、充放电测试研究了不同量MgF2包覆对LiNi1/3Co1/3Mn1/3O2正极材料的结构与电化学性能的影响。结果表明,MgF2以非晶态形式包覆于LiNi1/3Co1/3Mn1/3O2材料颗粒的表面,当包覆量为3%（物质的量分数,下同）时,三元正极材料具有优良的电化学性能,在3.0~4.6 V充放电范围内0.1C充放电倍率下,首次放电比容量为196.3 mA·h/g,1C循环50次后容量保持率为95.7%,55 ℃高温下1C循环50次后容量保持率为93.3%。     

Electromechanical properties of Mn-doped Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 piezoelectric ceramics

The dielectric, piezoelectric, and ferroelectric properties of Mn-doped and undoped yPb(In_1/2Nb_1/2)O₃-(1−x−y)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PIN-PMN-PT) ternary ceramics with morphotropic phase boundary composition have been investigated. Mn-doped PIN-PMN-PT ceramics show obvious hardening characteristics. With 2 mol% Mn doping the mechanical quality factor Q_m can be increased to as high as 2000, while the electromechanical coupling factor (k_p=57%) is still comparable to that of the undoped counterpart. The internal bias field E_i was analyzed and calculated based on the P-E hysteresis loops for the Mn-doped PIN-PMN-PT ceramic. The relatively high Curie temperature, very high Q_m, and low dielectric loss make the Mn-doped PIN-PMN-PT ceramics good candidates for high power and high temperature electromechanical device applications.     

Macroscopic and Nanoscopic Polarization Relaxation Kinetics in Lead‐Free Relaxors Bi1/2Na1/2TiO3–Bi1/2K1/2TiO3–BiZn1/2Ti1/2O3

The stability of the field‐induced ferroelectric (FE) state was studied in relaxor lead‐free ceramics (1 ? y)[0.81Bi_1/2Na_1/2TiO₃–0.19Bi_1/2K_1/2TiO₃]–yBiZn_1/2Ti_1/2O₃ both macroscopically and microscopically. A strong dc electric field results in the formation of a stable FE state with a large piezoelectric coefficient for compositions with a small amount of Bi(Zn_1/2Ti_1/2)O₃, which are in the non‐ergodic relaxor state at room temperature. Increasing temperature promotes ergodic relaxor behavior, which is accompanied by the rapid destabilization of the induced state, that is, small relaxation times. Based on the obtained data, it is proposed that the depolarization is a two‐step process consisting of an initial realignment of the FE domains and their subsequent breakup into polar nanoregions. The ergodic relaxor behavior is also promoted by increasing the Bi(Zn_1/2Ti_1/2)O₃ content. The related charge disorder results in an enhancement of random electric fields and consequently a stable FE state cannot be induced even at room temperature.     

Microstructure evolution and reaction mechanism of Pb(Zr1/2Ti1/2)O3-Pb(Zn1/3Nb2/3)O3–Pb(Ni1/3Nb2/3)O3 piezoelectric ceramics with plate-like PbTiO3 template

0.83 Pb(Zr_1/2Ti_1/2)O₃-0.11Pb(Zn_1/3Nb_2/3)O₃-0.06Pb(Ni_1/3Nb_2/3)O₃ (PZNNT) samples with plate-like PbTiO₃ (PT) template were prepared using tape casting technology. The microstructure evolution and reaction mechanism between the matrix and PT template was investigated systematically. The quench heat treatment experiment was designed and the microstructure was evaluated. The results showed that the plate-like PT template has relatively low thermal stability which would decompose to form Pb-rich liquid phase and Ti-rich region at the sintering temperature of 900 °C–1050 °C. Plate-like PT template reacted with the PZNNT matrix materials during the sintering process, which did not contribute to the grain growth orientation for PZNNT matrix. Finally, the mechanism of grain growth for the PZNNT ceramics with plate-like PT template is clarified. This work demonstrated that the thermal stability of plate-like template is one of the key factors for fabricating textured piezoelectric ceramics.