光通信用高速光电子器件和光模块质量考核试验问题研究

介绍和讨论光通信用高速光电子器件和光模块的质量考核试验相关标准、可靠性试验项目、光电子器件和光模块抽样方案、加速寿命试验和平均中值寿命等问题。     

光电子技术

TNZ 2004050105光通信用高速光电子器件和光模块质t考核试验问题研究/丁国庆,赵先明(武汉邮电科学院)11光通信技术一2004,2s(2).一4一8介绍和讨论光通信用高速光电子器件和光模块的质量考核试验相关标准、可靠性试验项目、光电子器件和光模块抽样方案、加速寿命试验和平均中值寿命等问题.表2(木)光的空间约束作用实现层选址.出了数据读出原理性实验结果制作一r 10层WMM模型器件,并给结果表明:WMM层间信号串扰小,是一种很有潜力的三维光存储技术.的层内信噪比大,IKJ4参9(木)TNZ 2004050106新型波导多层光存储原理和实验/梁忠诚,陈家胜,…     

半导体超晶格材料和光电子器件的研究和发展

半导体超晶格材料和以这些材料为基础的光电子器件是半导体科学和技术的一个新生长点。 超晶格材料是新一代半导体材料,它为新一代光电子器件奠定了基础。而这些新一代光电子器件正是廿一世纪光电子产业的核心。 半导体超晶格材料的研究和发展,把半导体光电子器件的研究和发展推进到一个崭新的阶段。可以预言,正如廿世纪是电子产业的时代一样,廿一世纪必定是光电子产业的时代。     

我国信息光电子器件与技术研究开发的若干进展

本文报告了我国信息光电子器件与技术研究开发的若干主要进展。     

GaN基光电子材料及器件的研究

GaN材料是性能优越的化合物半导体,与其相关的合金材料可以制作出高亮度蓝光、绿光发光二极管、紫外探测器、半导体蓝色激光器(LD)等具有重要应用价值的光电子器件,因而备受重视,本文综述了GaN基光电子器件研究开发现状及其应用前景。     

可恢复退化下半导体激光器的可靠性研究

半导体激光器自诞生至今在技术和应用方面取得了飞跃的发展,作为精密度要求极高的光电子器件,其可靠性研究具有十分重要的现实意义.针对目前激光器可靠性研究存在的一些问题,首先,在对激光器的性能退化因素和规律进行深入分析后,综合考虑了半导体激光器在工作时性能退化存在可恢复的情况,建立了基于竞争失效理论的半导体激光器的可恢复退化...     

在成功的阶梯上站稳脚，靠的是综合实力

光迅科技成立至今已经五周年了,如今这个中国光谷上的璀璨明珠从创品牌到扬名牌,正在历史的书卷上撰写着光辉的一笔。她带给我们的是更多的激励、更大的鼓舞和希望。光迅科技有着三十多年光电子器件研究的底蕴。她不仅承担过一大批国家级科技攻关项目,也是国家高科技光电子器件技术产业化示范单位。公司成立伊始就遇上了国际光通信市场的"冬天",但每年我们的销售业绩都以超过30%的速度在增长。这一业绩得益于光迅科技技术力量的雄厚和产品的多元化。在综合技术实力及产业规模上,光迅科技已确立了自己在中国光电子器件业界的领导地位。     

GaN材料键合技术研究进展

GaN材料及其有关光电子器件的研制是近年来光电子研究领域内的研究热点之一,而键合技术又是光电子集成研究领域内一项新的制作工艺。利用键合技术也可以研制出一些新型的光电子器件,这些器件用其他生长技术是不可能实现的。概括地介绍了近年来键合技术在GaN光电子器件及其集成领域内的研究进展和应用情况。     

半导体激光器在超高速光网络中的应用

光通信的快速发展对光电子器件提出了更高的要求.基于超高速光传输网络、光以太网及接入网对通信用半导体激光器的性能要求,结合中国光电子器件具体情况,对半导体激光器的性能、研究状态及应用进行了探讨.     

三菱电机

1960年前后贝尔研究所的S·Miller提出了集成光学,其初始阶段是将光电子器件和电子器件集成起来的光电集成电路,日本正在进行这方面的研究。本文首先介绍三菱电机的开发战略,然后介绍目前的研究开发情况。     

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non-contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)-based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires-based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs-based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs-based optoelectronic synaptic devices.     

SOI集成光电子器件

Silicon-on-insula tor(SOI)集成光电子器件的工艺与标准CMOS工艺完全兼容,采用SOI技术可以实现低成本的整片集成光电子回路。文章回顾了近几年来SOI集成光电子器件的发展以及一些最新的研究进展。     

国外光电子产品平台及能力概述

依照光电子器件的典型分类,对国外光电子器件的产品平台及能力 进行了整体概述。系统分析了激光器、发射器件及组件、显示器件、探测器件及组件、传 输器件及组件、连接器的平台研制与生产能力,并对其产品的发展趋势进行了展望。     

GaN基短波光电器件的研究进展

介绍了GaN基发光器件、电子器件以及GaN基紫外光(UV)探测器的研制和发展概况,描述了GaN基短波光电器件的研究进展并对其应用前景进行了展望。     

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si - based optoelectronic devices and integrated circuits can be achieved, it will lead to a new irtformational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si- based optoelectronic devices, such as light- emitting diodes, optical waveguides devices, Si photonic bandgap crystals, and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.     

短波中红外硅基光子学进展（特邀）

短波中红外光学（2~2.5 μm）在通信测距、卫星遥感、疾病诊断、军事国防等领域具有广泛的应用。作为短波中红外光学系统的关键核心部件,集成光电器件的开发一直都是重点的研究领域。得益于硅基材料超宽的光谱透明窗口,其在开发短波中红外集成光电子器件方面极具发展前景,近年来获得了广泛的关注。文中简要讨论了短波中红外硅基光子学的应用前景,从无源波导器件（包括波导、光栅耦合器、微型谐振腔、复用/解复用器等）、非线性光学波导器件和光电波导器件（包括调制器和探测器等）三方面综述了短波中红外硅基光子学的发展历史和前沿进展。     

Carbon Nanoparticles as Versatile Auxiliary Components of Perovskite-Based Optoelectronic Devices

Metal halide perovskite-based optoelectronics has experienced an unprecedented development in the last decade, while further improvements of efficiency, stability, and economic gains of such devices require novel engineering concepts. The use of carbon nanoparticles as versatile auxiliary components of perovskite-based optoelectronic devices is one strategy that offers several advantages in this respect. In this review, first, a brief introduction is offered on metal halide perovskites and on the major performance characteristics of related optoelectronic devices. Then, the versatility and merits of different kinds of carbon nanoparticles, such as graphene quantum dots and carbon dots, are discussed. The tunability of their electronic properties is focused upon, their interactions with perovskite components are analyzed, and different strategies of their implementation in optoelectronic devices are introduced, which include solar cells, light-emitting diodes, luminescent solar concentrators, and photodetectors. It is shown how carbon nanoparticles influence charge carriers extraction and transport, promote perovskite crystallization, allow for efficient passivation, block ion migration, suppress hysteresis, enhance their environmental stability, and thus improve the performance of perovskite-based optoelectronic devices.     

Carbon and Graphene Quantum Dots for Optoelectronic and Energy Devices: A Review

As new members of carbon material family, carbon and graphene quantum dots (CDs, GQDs) have attracted tremendous attentions for their potentials for biological, optoelectronic, and energy related applications. Among these applications, bio‐imaging has been intensively studied, but optoelectronic and energy devices are rapidly rising. In this Feature Article, recent exciting progresses on CD‐ and GQD‐based optoelectronic and energy devices, such as light emitting diodes (LEDs), solar cells (SCs), photodetctors (PDs), photocatalysis, batteries, and supercapacitors are highlighted. The recent understanding on their microstructure and optical properties are briefly introduced in the first part. Some important progresses on optoelectronic and energy devices are then addressed as the main part of this Feature Article. Finally, a brief outlook is given, pointing out that CDs and GQDs could play more important roles in communication‐ and energy‐functional devices in the near future.     

GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications

We report on a monolithic integration technique incorporating selective GaAs/GaAlAs optical device epitaxy (based on metalorganic chemical vapor deposition (MOCVD)) and planar ion-implanted GaAs devices, formulated for application to complex integrated optoelectronic circuits. This integration scheme offers fabrication compatibility of epitaxially grown optoelectronic devices with maturing GaAs electronic circuit approaches which require selective multiple implants and small gate geometries. Details of the monolithic integration technique and an example of its application to an optoelectronic transmitter are described.