共查询到18条相似文献,搜索用时 78 毫秒
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报道了用MBE的方法,在3英寸Si衬底上制备ZnTe/CdTe(211)B复合衬底材料的初步研究结果,该研究结果将能够直接应用于大面积Si基HgCdTe IRFPA材料的生长.经过Si(211)衬底低温表面处理、ZnTe低温成核、高温退火、高温ZnTe、CdTe层的生长研究,用MBE方法成功地获得了3英寸Si基ZnTe/CdTe(211)B复合衬底材料.CdTe厚度大于10μm,XRD FWHM平均值为120arc sec,最好达到100arc sec,无(133)孪晶和其他多晶晶向. 相似文献
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Si基CdTe复合衬底分子束外延研究 总被引:1,自引:0,他引:1
文章引入晶格过渡的Si/ZnTe /CdTe作为复合外延基底材料,以阻挡Si/HgCdTe之间大晶格失配产生的高密度位错。通过对低温表面清洁化、面极性控制和孪晶抑制等的研究,解决了Si基CdTe分子束外延生长中诸多的技术难题。在国内首次采用分子束外延(MBE)的方法获得了大面积的Si基CdTe复合衬底材料,对应厚度为4~4. 4μm Si/CdTe (211)样品双晶半峰宽的统计平均结果为83弧秒,与相同厚度的GaAs/CdTe (211)双晶平均水平相当。 相似文献
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随着红外焦平面阵列规模的扩大,由于尺寸和成本的限制,传统晶格匹配的碲锌镉衬底逐渐成为碲镉汞红外焦平面探测器发展的瓶颈,大尺寸、低成本硅基碲镉汞材料应运而生。本文采用分子束外延工艺生长获得了3 in Si基中波碲镉汞薄膜材料,通过采用金相显微镜、傅里叶红外光谱仪、双晶X射线衍射仪、湿化学腐蚀位错密度(EPD)法、Hall测试系统等检测手段对Si基中波碲镉汞分子束外延薄膜材料进行表面、光学、结构和电学性能表征,并采用标准平面器件工艺制备中波640×512焦平面探测阵列进行材料验证,结果表明该材料性能与国际先进水平相当。 相似文献
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为制备良好的碲镉汞金属接触,研究了热退火处理对中短波Hg空位掺杂碲镉汞金属接触的影响。对中短波HgCdTe-Sn/Au接触及中波HgCdTe-Cr/Au接触经不同条件退火后的接触进行了测量。对于短波碲镉汞,p型HgCdTe-Sn/Au接触经95 ℃,30 min退火可降低比接触电阻2个量级,而经125 ℃,30 min退火可降低3个量级;离子注入的n型HgCdTe-Sn/Au接触则容易形成欧姆接触。对于中波碲镉汞,退火前p型HgCdTe-Sn/Au接触平均比接触电阻为10-1 Ωcm2量级,经适当条件退火可以降低3个量级;此外,Sn/Au比Cr/Au更适合作为中波HgCdTe的接触金属。因而HgCdTe金属接触可通过一定退火处理得到改善。 相似文献
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为制备良好的碲镉汞金属接触,研究了热退火处理对中短波Hg空位掺杂碲镉汞金属接触的影响。对中短波HgCdTe-Sn/Au接触及中波HgCdTe-Cr/Au接触经不同条件退火后的接触进行了测量。对于短波碲镉汞,p型HgCdTe-Sn/Au接触经95℃,30 min退火可降低比接触电阻2个量级,而经125℃,30 min退火可降低3个量级;离子注入的n型HgCdTe-Sn/Au接触则容易形成欧姆接触。对于中波碲镉汞,退火前p型HgCdTe-Sn/Au接触平均比接触电阻为10-1Ωcm2量级,经适当条件退火可以降低3个量级;此外,Sn/Au比Cr/Au更适合作为中波HgCdTe的接触金属。因而HgCdTe金属接触可通过一定退火处理得到改善。 相似文献
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基于GaAs/Si材料中位错的运动反应理论,修正获得CdTe/Si和HgCdTe/Si外延材料中的位错运动反应模型.采用快速退火方法对Si基HgCdTe外延材料进行位错抑制实验研究,实验结果与理论曲线基本吻合,从理论角度解释了不同高温热处理条件对材料体内位错的抑制作用.对于厚度为4~10μnn的CdTe/Si进行500... 相似文献
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S. Velicu G. Badano Y. Selamet C. H. Grein J. P. Faurie S. Sivananthan P. Boieriu Don Rafol R. Ashokan 《Journal of Electronic Materials》2001,30(6):711-716
Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from
thermal generation and recombination processes. Although the need for cooling has long been thought to be fundamental and
inevitable, it has been recently suggested that Auger recombination and generation rates can be reduced by using the phenomena
of exclusion and extraction to produce nonequilibrium carrier distributions. The devices with Auger suppressed operation requires
precise control over the composition, and donor and acceptor doping. The successful development of the molecular beam epitaxy
(MBE) growth technique for multi-layer HgCdTe makes it possible to grow these device structures. Theoretical calculations
suggest that the p n+ layer sequence is preferable for near-room temperature operation due to longer minority carrier lifetime
in lightly doped p-HgCdTe absorber layers. However, because the low doping required for absorption and nonequilibrium operation
is easier to achieve in n-type materials, and because Shockley-Read centers should be minimized in order to obtain the benefits
of Auger suppression, we have focused on p+ n structures. Planar photodiodes were formed on CdTe/Si (211) composite substrates by As implantation followed by a three
step annealing sequence. Three inch diameter Si substrates were employed since they are of high quality, low cost, and available
in large areas. Due to this development, large area focal plane arrays (FPAs) operated at room temperature are possible in
the near future. The structures were characterized by FTIR, x-ray diffraction, temperature dependent Hall measurements, minority
carrier lifetimes by photoconductive decay, and in-situ ellipsometry. To study the relative influence of bulk and surface
effects, devices with active areas from 1.6 10−5 cm2 to 10−3 cm2 were fabricated. The smaller area devices show better performance in terms of reverse bias characteristics indicating that
the bulk quality could be further improved. At 80 K, the zero bias leakage current for a 40 m 40 m diode with 3.2 m cutoff
wavelength is 1 pA, the R0A product is 1.1 104-cm2 and the breakdown voltage is in excess of 500 mV. The device shows a responsivity of 1.3 107 V/W and a 80 K detectivity of 1.9 1011 cm-Hz1/2/W. At 200 K, the zero bias leakage current is 5 nA and the R0A product 2.03-cm2, while the breakdown voltage decreases to 40 mV. 相似文献