Magnetic properties and giant magnetoresistance effect of nanometer Fe−In2O3 granular films

Nanometer ferromagnetic metal-semiconductor matrix Fe−In₂O₃ granular films are fabricated by the radio frequency sputtering. Magnetic properties and the giant magnetoresistance (GMR) effect of Fe_x(In₂O₃)_1−x granular film samples are studied. The result shows that the magnetoresistance (MR) ratio Δρ/ρ ₀ value of the granular film samples with Fe volume fraction x=35% is 4.5% at room temperature. The temperature dependence (T=1.5–300 K) of the MR ratio Δρ/ρ ₀ value of Fe_0.35(In₂O₃)_0.65 granular films shows that Δρ/ρ ₀ value below 10 K increases rapidly with the decrease of the temperature, and when T=2 K, Δρ/ρ ₀ value is 85%. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that, when the temperature decreases to a critical point T _p=10 K, the change of the structure in Fe_0.35)In₂O₃)_0.65 granular films results in the transformation of state from ferromagnetic to spin-glass-like. The remarkable increase of the MR ratio Δρ/ρ ₀ value of Fe_0.35(In₂O₃)_0.65 granular films below 10 K seems to arise from the peculiar conducting mechanism of the granular film samples in the spin-glass-like state.     

Giant magneto-optical faraday effect of nanometer Fe-In<Subscript>2</Subscript>O<Subscript>3</Subscript> granular films

The giant magneto-optical Faraday effect of nanometer ferromagnetic metal-semiconductor matrix Fe-ln2O3 granular films prepared by the radio frequency sputtering are studied. The result shows that the Faraday rotation angle θF value of the granular film samples with Fe volume fraction x = 35% is of the order of 10^5（°）/cm at room temperature. Temperature dependence of the Faraday rotation angle θF of Fe0.35（In2O3）0.65 granular films shows that θF value below 10 K increases rapidly with the decrease of the temperature, and when T= 4.2 K, θF value is 106（°）/cm. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that when the temperature decreases to a critical point Tp = 10 K, the transformation of state from ferro-agnetic to spin-glass-like occurs in Fe0.35（In2O3）0.65 granular films. The remarkable increase of the Faraday rotation angle θF value of Fe0.35（In2O3）0.65 granular films below 10 K seems to arise from the sp-d exchange interaction of the granular film samples in the spin-glass-like state.     

Fe-Al_2O_3纳米颗粒膜的巨磁电阻效应及微结构

采用磁控溅射方法在玻璃基片上制备了一系列的 Fe- Al2 O3 颗粒膜样品 ,对样品的巨磁电阻效应 (GMR)和磁性能进行了测量 ,并用高分辨电镜 (HRTEM)对膜中 Fe颗粒的微结构进行观察 .结果表明 :磁电阻 MR随 Fe含量而变化 ,在体积分数为 47%时获得最大值 4.0 % .45 % Fe-Al2 O3 颗粒膜的室温磁性表现为超顺磁性 ,磁电阻 MR与 - (M/Ms) 2 成正比 ,相关常数 A≈ 0 .0 3 6 .HRTEM观察表明 ,当 Fe颗粒尺寸约小于 1 nm时 ,Fe颗粒为非晶态 ,而大于该尺寸时则为晶态 .在 Fe- Al2 O3 颗粒膜体系中存在与隧道相关的 GMR,GMR的起因可归于传输电子的自旋相关的散射     

Peculiarity of magnetoresistance of discontinuous ferromagnetic thin films

The magnetoresistive properties of discontinuous ferromagnetic Fe and Co thin films deposited by electron-beam sputtering onto glass substrates at room temperature were investigated. Tunnel magnetoresistance (MR) was observed for all of the as-deposited samples. The maximum MR was observed for Fe thin films with an effective thickness of 17 nm. In the case of the Co thin films, the annealing process led to a change of the type of MR to anisotropic at Co film thicknesses (d_Co) of 15 ≤ d_Co ≤ 25 nm and to positive isotropic at thicknesses of d_Co < 15 nm. By contrast, the MR type of Fe thin films did not change.     

Tunnel magnetoresistance (TMR) in ferromagnetic metalinsulator granular films

We review the recently discovered tunnel-type giant magnetoresistance (GMR) in ferromagnetic metalinsulator granular thin films, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal particles. The theoretical and experimental results including electrical resistivity, magnetoresistance and their temperature dependence are described. Limitations to the applications of the ferromagnetic metalinsulator granular films are also discussed. Additionally, a brief survey of another two magnetic properties, high-frequency property and giant Hall effect (GHE) associated strongly with the granular structures is also presented.     

BaTiO_3/γ-Fe_2O_3颗粒膜的介电性质和磁电性质

本文利用高真空磁控——离子束复合溅射系统在单晶n型Si(100)面上生长了Ag/[BaTiO3/?-Fe2O3]/ZnO结构的复合薄膜,对比研究了BaTiO3/γ-Fe2O3颗粒膜在真空退火温度300°C,400°C和500°C下的介电性质、磁性质以及铁电特性.实验研究发现,随着退火温度的升高,样品的电容和介电常数逐渐变大,在500°C退火的样品,其电容为633.93 pF,介电常数为10.233.所有样品都具有良好的铁磁性和铁电性,其中在400°C退火的样品具有最大的饱合磁化强度103.3 emμ/cm3,而在500°C时具有最大的剩余电极化强度9.13?10?1μm/cm2.同时,在零磁场和1.0 T的磁场下,矫顽电场和剩余电极化强度都没有明显的变化.在200 K时,电滞回线却发生了明显的变化.     

(Ni79Fe21)0.44(Al2O3)0.56纳米颗粒膜的巨磁电阻效应

采用磁控溅射法在玻璃基片上制备了一系列不同Ni79Fe21含量x的（Ni79Fe21)x(Al2O3)1-x纳米颗粒膜样品，并对样品的巨磁电阻效应进行了研究。在（Ni79Fe21)0.44(Al2O3)0.56颗粒膜样品中，扫描透射电镜（TEM）照片清晰显示纳米Ni79Fe21颗粒包课于Al2O3中。观测到了室温下近2.5%的巨磁电阻效应，发现样品的巨磁电阻效应随着退火温度升高而单调下降，不存在一个最佳退火温度。     

NdB2Cu3O7-x/YBa2Cu3O7-y高温超导薄膜的稳定性研究

采用脉冲激光沉积方法 ,在钇稳定氧化锆 (YSZ)衬底上制备了YBa2 Cu3 O7-y高温超导薄膜和NdB2 Cu3 O7-x/YBa2 Cu3 O7-y双层高温超导薄膜。X射线衍射分析结果表明 ,NdB2 Cu3 O7-x/YBa2 Cu3 O7-y双层膜在结晶度、表面光滑平整度和稳定性方面优于YBa2 Cu3 O7-y薄膜 ;电阻温度曲线测量结果表明 ,NdB2 Cu3 O7-x/YBa2 Cu3 O7-y双层膜的转变温度为 87.6 6K ,转变宽度为 0 .34K ;YBa2 Cu3 O7-y薄膜的则分别为 86 .6 4K和 0 .95K。与YBa2 Cu3 O7-y薄膜相比 ,NdB2 Cu3 O7-x/YBa2 Cu3 O7-y双层膜稳定性更高 ,在超导电子器件领域更具有应用潜力。     

钙钛矿La0.67Pb0.33MnO3薄膜的制备及表征

利用磁控溅射法在单晶LaAlO3(100)衬底上成功的外延生长了La0.67Pb0.33MnO3薄膜。用X射线衍射、原子力和超导量子干涉仪、振动样品磁强计对其进行了表征。结果表明,薄膜为赝立方钙钛矿结构,晶胞参数为a=3.861 nm,具有良好的单晶外延结构和光滑的表面。居里温度TC=345 K,在居里温度附近,发生铁磁-顺磁转变。此材料呈现出一种典型的自旋玻璃特性,是由于应力造成的。在室温条件下,当H=0.8T时,磁电阻效应非常明显,此现象是由于固有磁电阻效应引起的,并不是低场磁电阻效应引起的。室温下,其矫顽力只有50奥斯特。     

Magnetic properties and tunneling magnetoresistance in FeCo-SiO2 granular films

Fefv(SiO2)1-fv granular films were fabricated by rf sputtering (fv represents the Fe volume fraction). The mi-crostructure, magnetic properties as well as the tunneling magnetoresistance effect (TMR) were systematically studied. It was found that the maximum TMR ratio is about -3.3% at fv = 0.33. Under the same condition, a series of (Fe100-x Cox)0.33(SiO2)0.67 were prepared. TMR value reaches -4.5% at x = 53, while the microstructure of the film still keeps as that of Fe0.33(SiO2)0.67. The higher TMR ratio is contributed to the elevating of the spin polarization of particles. This is consistent with Inoue's theory.     

PbTiO3薄膜的热释电性和铁电性研究

采用Sol—Gel工艺制备了较大面积不裂的PbTiO_3薄膜,对样品做了不同烧结温度下的X射线衍射实验,经550℃保温30min的样品已形成了单一晶相的PbTiO_3多晶膜。对样品的热释电系数随温度、薄膜厚度和胶液浓度的变化关系研究,发现热释电系数随胶液浓度和薄膜厚度的增加而增大,最后达到饱和。样品的室温热释电系数为3.6×10~(-8)C/cm~2·K,介电常数为15～26,介电损耗为0.001—0.05,居里温度为515℃,自发极化强度和剩余极化强度分别为6.54μc/cm~2和3.37μc/cm~2,矫顽场强为54.8kV/cm。     

镧掺杂五氧化二钽膜电极的电化学性能

利用低温水热法合成了镧掺杂五氧化二钽粉体.对样品的相结构进行了X射线衍射(XRD)分析,结果表明,掺镧后的五氧化二钽有好的晶型,并且掺杂使其衍射峰发生低角度偏移.通过循环伏安法(CV)在0.1 mol*L-1 KCl (含有K3Fe(CN)6)水溶液中测试了镧掺杂五氧化二钽膜电极的电化学性能,CV结果表明K3Fe(CN)6)在膜电极上的电极反应是扩散控制的反应.此外,镧掺杂五氧化二钽膜电极仍然有好的导电性,并且展现了比不掺杂的五氧化二钽膜电极更稳定的电化学特性.     

钙钛矿La2/3Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3三层薄膜的磁输运性能

高温超导材料YBa2Cu4O8(YBCO)和铁磁材料La2／3Ca1／3MnO3(LCMO)形成的三层薄膜LCMO／YBCO／LCMO由对靶溅射技术制得．与YBCO单层薄膜相比，由于超导／铁磁系统中的磁性邻近效应，三层薄膜表现出较低的超导转变温度(Tc,ON)．与LCMO单层膜相比，三层薄膜的金属半导体转变温度(TMS)被提高并且强烈依赖于YBCO层的厚度．随中间层厚度的变化，磁电阻显示出非单调行为，长振荡周期被发现．结果表明，当YBCO处于正常态时两层LCMO膜之间存左着磁性自旋相互作用．     

金属掺杂对半导体薄膜光学性质的影响

研究了射频溅射法制备的半导体膜的光学特性.通过样品透射谱分析,发现在半导体In2O3材料中掺入金属Fe颗粒的薄膜中,电子的带间跃迁由In2O3的直接跃迁变为间接跃迁;随Fe所占体积份数的增加,局域态尾变宽,带隙变窄.这是由于掺入Fe颗粒后,母体材料与金属颗粒的界面处表面态增多,以及母体材料的非晶化引起的.     

热处理及厚度对Co90Fe10薄膜磁电阻的影响

利用电子束真空蒸发方法制备了不同厚度的Co90Fe10磁性薄膜,研究了热处理及厚度对薄膜磁电阻的影响。利用四探针法测量了薄膜的磁电阻,利用磁力显微镜观察了薄膜的磁畴结构。结果表明:热处理可以提高薄膜的磁电阻,尤其是厚度较小的样品,效果更加明显。对于厚度较大的薄膜,热处理可以改善磁织构,磁畴分布更加有序,出现了类巨磁电阻特征。     

Ag掺杂类钙钛矿Ca(Mn_2Cu_1)Mn_4O_(12)的电磁性能

采用固相反应法制备了系列Ca(Mn2Cu1)Mn4O12/mAg2O多晶类钙钛矿锰氧化物。X射线衍射表明,m≤0.3的样品呈比较纯净的类钙钛矿相,而m>0.3的样品,是由类钙钛矿和金属Ag相组成的复合物。所有样品呈现半导体导电性质,电阻率低于未掺杂的Ca(Mn2Cu1)Mn4O12样品。居里温度测量表明,随着Ag掺杂量的增加,样品的居里温度逐渐升高。对于m=0.3和m=0.6的样品,120K温度和1T磁场下磁电阻比可达-10%左右。     

Fe/In2O3颗粒膜的特殊磁相变

用射频溅射法成功制备了金属/半导体型磁性颗粒膜Fex(In2O3)1-x.磁测量表明,从室温至低温(300～1.5K)的温度范围内,样品经历了由超顺磁性向超顺磁性、铁磁性共存的混合态-类反铁磁性的特殊磁相变过程,由此提出该颗粒膜中Fe颗粒的尺度有大小两种类型.     

铁离子掺杂TiO2基自洁净玻璃的制备及性能

用溶胶—凝胶法制备了表面镀有Fe—TiO2光催化薄膜的自洁净玻璃，并利用DTA—TG，XRD，SEM等手段研究了Fe—TiO2光催化薄膜的结构与特征。利用紫外—可见光分光光度计测量了不同镀膜层数的玻璃的透光率。通过光催化降解有机磷农药敌敌畏的水溶液，研究了不同铁含量以及不同镀膜层数对自洁净玻璃光催化活性的影响。研究结果表明：光催化薄膜主要由粒径为几十纳米的Fe3O4和TiO2颗粒构成；铁离子掺杂可以提高自洁净玻璃的光催化活性，在同样镀膜层数(2层)的情况下，[Fe]/[TiO2](摩尔比)＝0．005时的光催化性能最好；当用同样浓度的铁离子掺杂时，镀膜层数为9的光催化活性最高。     

Cr/Gd双层膜的磁特性

采用磁控溅射法制备居里温度(TC)略低于奈尔温度(TN)的Cr/Gd双层薄膜.利用振动样品磁强计研究薄膜在不同温度下的磁滞特性.结果表明:该类薄膜系统与TCTN的铁磁/反铁磁双层薄膜的磁滞特性不同,当测量温度(T)大于TC时,Gd层处于铁磁态,矫顽力(HC)随温度非单调变化;当T为80～205K时,HC随温度增加逐渐减小;在T=205K出现一个极小值后逐渐增大;在T=255K附近出现一个主峰;当T为255～295K时,HC随温度升高迅速减小;当T295K时,HC随温度升高迅速增大.即铁磁/反铁磁界面处的反铁磁自旋与铁磁自旋的交换耦合作用对铁磁层磁有序态的维持温度和矫顽力影响较大.     

Cu低掺杂对La0.7Ca0.3MnO3电阻及磁电阻的影响

用溶胶凝胶法制备了Cu低掺杂的La0.7Ca0.3Mn1-xCuxO3(x=0%,1%,2%,3%,4%,5%)系列多晶材料.采用振动样品磁强计测量了系列样品的热磁曲线并获得了相应的居里温度,实验结果表明居里温度随着Cu掺杂量的增加而减少.在77~350 K温度范围内测量了样品的电阻和磁电阻,结果表明样品电阻率与温度的关系均具有明显的电阻峰结构.当x=5%时,开始出现双电阻峰结构;掺杂量x为1%,2%,3%,5%的样品在外场为0.4 T时存在较大的磁电阻极大值,分别为30.5%,25.4%,22.4%,18.8%,均大于未掺杂(x=0%)的13.5%.双交换(DE)模型简单地解释了Cu低掺杂对电阻及磁电阻行为的影响.