Nd28Fe66B6/Fe50Co50双层纳米复合膜的结构和磁性

利用磁控溅射法制备了Nd₂₈Fe₆₆B₆/Fe_{50Co50 双层纳米复合磁性薄膜，研究了其结构和磁性.经873K退火处理15min 后，利用x射线衍射仪测定薄膜晶体结构，采用俄歇电子能谱仪估算薄膜厚度和超导量子干 涉仪测量其磁性.磁性测量表明，1)该系列薄膜具有垂直于膜面的磁各向异性.从起始磁化曲 线和小回线的形状特征可知，矫顽力机制主要是由畴壁钉扎控制.2)对于固定厚度（10nm） 层的硬磁相Nd-Fe-B和不同厚度（dFeCo=1—100nm）层软磁相FeCo双层纳米复合 膜,剩磁随软磁相FeCo 厚度的增加快速增加，而矫顽力则减少.当dFeCo=5nm 时 ，最大磁能积达到160×１０^３A/m.磁滞回线的单一硬磁相特征说明，硬磁相Nd -Fe-B层和软磁相FeCo层之间的相互作用使两相很好地耦合在一起.剩磁和磁能积的提高是由 于两相磁性交换耦合所致. 关键词： Nd-Fe-B/FeCo双层纳米复合膜 交换耦合 磁性增强}     

Nd28Fe66B6/Fe50Co50双层纳米复合膜的结构和磁性

利用磁控溅射法制备了Nd28F66B6/Fe50Co50双层纳米复合磁性薄膜,研究了其结构和磁性.经873K退火处理15min后,利用x射线衍射仪测定薄膜晶体结构,采用俄歇电子能谱仪估算薄膜厚度和超导量子干涉仪测量其磁性.磁性测量表明,1)该系列薄膜具有垂直于膜面的磁各向异性.从起始磁化曲线和小回线的形状特征可知,矫顽力机制主要是由畴壁钉扎控制.2)对于固定厚度(10nm)层的硬磁相Nd-Fe-B和不同厚度(dFeCo=1-100nm)层软磁相FeCo双层纳米复合膜,剩磁随软磁相FeCo厚度的增加快速增加,而矫顽力则减少.当dFeCo=5nm时,最大磁能积达到160×103A/m.磁滞回线的单一硬磁相特征说明,硬磁相Nd-Fe-B层和软磁相FeCo层之间的相互作用使两相很好地耦合在一起.剩磁和磁能积的提高是由于两相磁性交换耦合所致.     

Sm(CobalFe0.1Cu0.1Zr0.033)6.9高温永磁合金的矫顽力

对Sm(Co_balFe_0.1Cu_0.1Zr_0.033)_6.9合金, 经810℃等温时效后以0.5℃/min逐渐冷却, 在600℃-400℃温度区间淬火, 研究了不同淬火温度下的磁滞回线、磁畴和矫顽力温度系数β. 发现时效600℃淬火后磁滞回线出现台阶状, 说明畴壁中应存在两处钉扎. 随淬火温度的降低, 合金的室温矫顽力显著增加, 磁滞回线的台阶消失. 通过磁畴形貌发现时效600℃淬火后的磁畴接近条形畴, 1:5相中Cu分布相对均匀, 形成的畴壁钉扎较弱, 从而使磁滞回线出现台阶, 决定矫顽力的畴壁钉扎位于两相界面处; 随时效淬火温度的降低, 磁畴逐渐细化, 畴壁1:5相中的畴壁能降低, 形成了较强的内禀钉扎, 并决定材料的矫顽力, 两相界面处的畴壁钉扎被掩盖. 对不同温度淬火合金的高温矫顽力研究表明, 最强的畴壁钉扎位于两相界面处时, 矫顽力随温度升高逐渐增加, 矫顽力出现温度反常现象; 最强的畴壁钉扎位于1:5相中心时, 矫顽力随温度升高逐渐衰减. 当测试温度达到500℃后不同淬火温度样品的矫顽力几乎相同, 此时最强畴壁钉扎均在两相界面处.     

沉积于MgO基片上的La0.7Ca0.3MnO3薄膜的应变弛豫和磁电阻特性

利用90°离轴射频磁控溅射方法将La_0.7Ca_0.3MnO₃(LCMO)沉积于(001)取向的MgO单晶基片上,薄膜厚度变化范围为5nm到200nm. 通过掠入射X射线衍射技术测量了LCMO/MgO薄膜的面内晶格常数, 结合常规X射线衍射研究了LCMO薄膜的晶格应变及其弛豫情况, 用四探针法测量了薄膜的磁电阻特性.结果表明, LCMO/MgO薄膜均为(001)取向生长, 在厚度小于5nm时已经发生应变弛豫, 当薄膜厚度为100nm以上时, 薄膜的微应变接近于完全弛豫, 并表现出与块体材料类似的磁电阻特性, 具有较大的磁电阻和较高的磁电阻峰值温度.     

Nd-Ce-Fe-B纳米复合薄膜的磁性及交换耦合作用

采用磁控溅射技术制备了具有永磁特征的Nd-Ce-Fe-B多层纳米复合薄膜,并对其进行了退火处理.通过改变退火温度,研究其对薄膜磁性能和晶体结构的影响.结果表明,随着退火温度的提高薄膜磁性能逐渐增大,但当温度达到695℃以上时,薄膜的磁性能急剧下降.当退火温度为675℃时,薄膜的矫顽力Hci=10.1 kOe(1Oe=79.5775 A/m),垂直于薄膜表面方向的剩余磁化强度4πM_(r⊥)=5.91 kG(1 G=10~3/(4π)A/m).薄膜的X射线衍射结果表明,磁性薄膜具有较好的c轴取向.通过对薄膜磁化反转过程的研究,发现随着外加磁场的增大,M_(rev)的极小值向M_(irr)减小的方向移动,这与畴壁弯曲模型类似,表明在薄膜中存在较强烈的局部钉扎作用,而剩余磁化强度曲线表明这种钉扎作用在薄膜矫顽力机制中并不占支配作用.此外,薄膜的Henkel曲线结果表明在薄膜中存在较强的交换耦合作用,在经过685℃退火的薄膜中磁相互作用更加显著.     

垂直取向Nd2Fe14B/α-Fe磁性三层膜的磁化反转

运用微磁学方法结合物质参数探究了垂直取向Nd₂Fe₁₄B/α-Fe磁性三层膜的磁化反转过程,计算出成核场、钉扎场以及磁滞回线随Ｌ^s（软磁相厚度）的变化,并与相关的实验和理论数据进行比较.由于考虑了退磁能量项,垂直取向的成核场比平行取向时低,在外磁场还没有反向时就发生了成核.随着软磁相厚度的增加,理论矫顽力从等于成核场（同时也等于钉扎场）,到等于钉扎场,再到小于钉扎场,矫顽力机理由成核变为钉扎. 关键词： 成核场 钉扎场 矫顽力 磁滞回线     

稀土永磁体及复合磁体反磁化过程和矫顽力

稀土永磁体即使内秉性质相同,但矫顽力可能相差很大.本文以Pr-Fe-B磁体为例,从热激活反磁化即反磁化临界过程探讨决定矫顽力的关键因素.Pr-Fe-B晶粒表层缺陷区与晶粒内部耦合推动反磁化畴形核从而去钉扎,晶粒表层缺陷区的各向异性对克服晶粒内部势垒具有贡献,因此反磁化形核场和矫顽力大大降低.由于晶粒表层缺陷区与晶粒内部耦合,在反磁化临界过程磁畴壁尺寸稍大于理论尺寸.具有软、硬磁相结构的Pr-Fe-B复合磁体,软、硬磁相晶粒之间交换耦合作用也会增大反磁化畴壁尺寸.软、硬磁交换耦合的能量对克服硬磁相晶粒内部各向异性势垒也会有贡献,这将进一步降低磁体矫顽力.添加Ti,Nb高熔点金属,复合磁体矫顽力显著提高.分析认为,这不仅仅是磁体晶粒尺寸减小的缘故.热激活尺寸减小说明磁畴壁中包含的硬磁相晶粒表层缺陷区尺寸减小,硬磁相表面和两相界面各向异性对克服硬磁相晶粒内部势垒的贡献减小,反磁化所需外磁场增大.     

烧结Nd-Fe-B永磁合金矫顽力机制的理论与实验研究

从理论和实验上研究了烧结Ｎｄ－Ｆｅ－Ｂ永磁合金的矫顽力随取向磁场的变化规律。指出磁体反磁化过程主要是晶粒边界软磁性区的反磁化成核以及反磁化核长大成畴并向晶粒内部不可逆畴壁位移的过程。比较了成核场与退钉扎场的大小及其随磁场方向的变化，并得出结论：退钉扎场是决定烧结Ｎｄ－Ｆｅ－Ｂ磁体矫顽力的主要机制。 关键词：     

Nd2(Fe1-xMnx)14B的低温内禀矫顽力

当x<0.5时,Nd₂(Fe_1-xMn_x)₁₄B可形成四方晶体结构,空间群为P4₂/mnm。在低温下,该赝三元化合物的大块铸态样品具有高矫顽力。此矫顽力不依赖于热处理等工艺过程,因此具有内禀性质。内禀矫顽力 _iH_c与样品的成分有关。Nd₂(Fe_1-xMn_x)₁₄B的起始磁化曲线具有传播场H_p,并且H_p的数值与 _iH_c接近。这表明内禀矫顽力是由畴壁钉扎造成的。研究了 _iH_c与温度的变化关系,并估算了钉扎位垒的强度。测量了Nd₂(Fe_1-xMn_x)₁₄B的居里温度和饱和磁化强度。在此赝三元化合物中,交换作用随Mn对Fe的替换而急剧降低。这使得畴壁厚度变窄。Nd₂(Fe_1-xMn_x)₁₄B的磁化和反磁化行为可用窄畴壁的特征来解释。 关键词：     

磁振子宏观效应以及热扰动场对反磁化的影响

热扰动导致的磁反转是越过能量势垒的不可逆反转,称为热助隧穿.本文研究Pr-Fe-B磁体热扰动导致的磁反转弛豫现象,反转磁矩与时间自然对数关系可表示为与能垒之间的关系,因此反磁化弛豫现象可用磁振子按能量的玻色统计分布率来解释,是磁振子宏观效应的体现.反磁化不可逆过程的临界尺寸为纳米级,与理论磁畴壁尺寸接近,证实热扰动反磁化经过磁畴壁形核去钉扎过程.在实空间反磁化耦合体积增大能减小磁振子隧穿的反磁化概率,热扰动场减小;热扰动后效场测量值与热扰动场计算值基本是一致的.温度升高,热扰动能量增大,由于耦合作用热扰动后效场有所减小,但热扰动后效场相对于矫顽力的作用增大.     

Magnetization reversal process and intrinsic coercivity of sputtered Sm2Co17-based films

The Sm₂Co₁₇-based intermetallic films with additives of Fe, Cu, and Zr have been deposited on Si(1 0 0) substrates by dc magnetron sputtering process. Subsequent thermal treatment and the film thickness are found to have significant contribution to the crystal structure and grain structure, which determines the magnetization reversal process and intrinsic coercivity (H_C) of these films. The conventional thermal annealing (CTA) treatment almost failed to crystallize the as-deposited films, leading to a very low H_C. Continuous and homogeneous domain walls cannot form in this deteriorated microstructure, so that the pinning mechanism can be excluded. Contrarily, the films with thickness exceeding 0.8 μm treated by rapid recurrent thermal annealing (RRTA) show an improved H_C, which is attributed to the observed completed crystallization and compact microstructure. It is suggested that this film structure is responsible for providing continuous and homogeneous domain walls, leading to a magnetization reversal process controlled by domain wall pinning model. In special, the H_C of the RRTA-treated film with thickness of 1.8 μm shows a good temperature dependence from 25 to 300 °C, with intrinsic coercivity temperature coefficient β of −0.23%/°C.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

La0.8Ca0.2MnO3/SrTiO3薄膜厚度对其结构及磁学性能的影响

采用多种X射线衍射技术和磁电阻测量技术研究了不同厚度的La_0.8Ca_0.2MnO₃/SrTiO₃ (LCMO/STO)薄膜的应变状态及其对磁电阻性能的影响.结果表明，在STO(001)单晶衬底上生长的LCMO薄膜沿［00l］取向生长.LCMO薄膜具有伪立方钙钛矿结构，随着薄膜厚度的增加，面内晶格参数增加，垂直于面内的晶格参数减小,晶格参数a和b相近，略小于c.LC 关键词： X射线衍射 微结构 应变 物理性能     

Influence of microstructures on exchange bias behaviors of La0.7Sr0.3MnO3/La0.33Ca0.67MnO3 bilayers

Ferromagnetic La_0.7Sr_0.3MnO₃ (LSMO) and antiferromagnetic La_0.33Ca_0.67MnO₃ (LCMO) layers were grown on SrTiO₃ (STO) substrates by the pulsed laser deposition technique. LSMO films had rougher surfaces and larger grain sizes than LCMO films. Fully strained bilayers, in which each layer was as thin as 10 nm, were prepared by changing their stacking sequences, i.e. LSMO/LCMO/STO and LCMO/LSMO/STO. The former had higher T_C (350 K) than the latter (300 K), and exchange bias effects were only observed in the former bilayers. This revealed that microstructures could play an important role in the transport and magnetic properties of manganese oxide thin films.     

Grain size reduction and recording performance improvement by using NiW as a partial interlayer in CoCrPt/SiO2 recording medium

We report the effect of NiW, as an interlayer to partially replace Ru, on the microstructure, magnetic properties, and recording performance of CoCrPt/SiO₂ perpendicular recording media. It was found that the full width at half maximum of the rocking curves of the Co (0002) peak changed little with NiW thickness up to 10 nm. However, further increase of NiW thickness caused a larger c-axis dispersion. The grain size of the CoCrPt/SiO₂ recording layer was reduced from 10.9±1.8 nm for the films without NiW to 7.7±1.5 nm for films with 10-nm NiW as a partial interlayer. The coercivity, H _c, nucleation field, H _n, and the reverse overwrite, Rev_OV, of the CoCrPt/SiO₂ layer did not change much (less than 15%) with increased NiW thickness. However, it did affect the switching field distribution of the CoCrPt/SiO₂ layer (more than double). The recording performance was improved by using NiW as a partial interlayer, which was mainly attributed to the reduced grain size.     

Magnetotransport properties of La0.67Ca0.33MnO3//La0.67Sr0.33MnO3 bilayers

The perovskite bilayers La0.67Ca0.33MnO3 （LCMO） （100 nm） / La0.67Sr0.33MnO3（LSMO） （100 nm） and LSMO （100 nm） / LCMO （100 nm） are fabricated by a facing-target sputtering technique. Their transport and magnetic properties are investigated. It is found that the transport properties between them are different obviously due to distinguishable structures, and the different lattice strains in both films result in the difference of metal-to-insulator transition. Only single-step magnetization loop appears in our bilayers from 5K to 320K, and the coercive force of LSMO/LCMO varies irregularly with a minimum ～ 2387A/m which is lower than that of LCMO and LSMO single layer films. The behaviour is explained by some magnetic coupling.     

Ag对CoPt/Ag纳米复合膜的结构与磁性的影响

采用直流磁控溅射的方法制备了一系列(CoPt/Ag)_n多层膜，然后在不同温度下 进行了退火处理，并对其结构和磁性做了初步的表征，研究了Ag的含量以及薄膜中每一单元 厚度与总厚度对退火后薄膜的结构以及磁性能的影响.结果表明，膜厚较薄时(大约20 nm)有 利于薄膜沿(001)取向生长，Ag的加入不但能够抑制CoPt晶粒的过分长大还可以诱导薄膜的( 001)取向，使退火后的薄膜在垂直于膜面方向上的矫顽力大大增强.对于特定组分为Co ₄₀Pt₄₃Ag₁₇的薄膜，经600℃退火后已经显示了明显的(001) 取向，垂直于膜面方向上的矫顽力为5.6×10⁵ A/m，饱和磁化强度为0.65T, 并 且磁滞回线具有很好的矩形度，剩磁比(s)为0.95. 关键词： 磁记录材料 磁性薄膜 CoPt/Ag纳米复合膜     

Thickness dependence of electroresistance in La0.67Ca0.33MnO3 epitaxial films

The electroresistance (ER) of La_0.67Ca_0.33MnO₃ (LCMO) epitaxial thin films with different thicknesses was studied. For the 110 nm thick LCMO film, its ER shows a maximum at T_p, where the resistance shows a peak, and decreases to zero at lower temperatures. While for the 30 nm thick LCMO film, its ER is remarkable in a wide temperature range. Another interesting observation in this work is that the electric current can tune the magnetoresistance of the ultrathin LCMO thin film. The results were discussed by considering the coexistence of ferromagnetic metallic phase with the charge ordered phase, and the variation of the phase separation with film thickness and electric current. This work also demonstrates that electric current can tune the magnetoresistance of the manganites, which is helpful for their applications.     

Enhancing low-field magnetoresistance of La0.67Ca0.33MnO3 films deposited on anodized aluminium-oxide membranes

In this paper we report a new method to fabricate nanostructured films, La0.67Ca0.33MnO3 （LCMO） nanostructured films have been fabricated by using pulsed electron beam deposition （PED） on anodized aluminium oxide （AAO） membranes, The magnetic and electronic transport properties are investigated by using the Quantum Design physics properties measurement system （PPMS） and magnetic properties measurement system （MPMS）. The resistance peak temperature （Tp） is about 85 K and the Curie temperature （To） is about 250 K for the LCMO film on an AAO membrane with a pore diameter of 20nm. Large magnetoresistance ratio （MR） is observed near Tp. The MR is as high as 85% under 1 T magnetic field. The great enhancement of MR at low magnetic fields could be attributed to the lattice distortion and the grain boundary that are induced by the nanopores on the AAO membrane.     

Exchange bias in (1 1 0)-orientated Bi0.9La0.1FeO3/La0.5Ca0.5MnO3 films

We performed a systematic study on the exchange bias in (1 1 0)-orientated Bi_0.9La_0.1FeO₃/La_0.5Ca_0.5MnO₃ (BLFO/LCMO) heterostructure with a fixed BLFO film thickness of 600 nm and different LCMO layers ranging from t=0 to 30 nm. The LCMO is found to be weakly ferromagnetic, with the Curie temperature descending from ∼225 K to 0 as the layer thickness decreases from 30 nm to 3 nm. The main magnetic contributions come from the BLFO film, and the areal magnetization ratio is 1:0.07 for t=5 nm and 1:0.82 for t=30 nm for BLFO to LCMO at the temperature of 5 K. Further experiments show the presence of significant exchange bias, and it is, at the temperature of 10 K, ∼40 Oe for t=0 and ∼260 Oe for t=30 nm. The exchange bias reduces dramatically upon warming and disappears above the blocking temperature of the spin-glasslike behavior observed in the samples. The possible origin for exchange bias is discussed.