一种用于D类放大器的高阶单比特的SDM调制结构的实现

在介绍∑-△调制的基本原理基础上,重点设计出一种调制器结构,其特性适用于D类功放.分析了该电路结构特性对电路模块设计的影响,给出了电路模块的设计原则和指标.该结构最终测试结果为动态范围100 dB,信噪比90 dB,翻转频率400 kHz,总谐波失真0.008 4%.最后得到结论:在48 kHz,44.1 kHz采样率下该设计功能达到了预期效果,足以满足D类放大器应用.     

一种基于高性能光波导脉冲单选器的研制

介绍了一种高性能光波导脉冲单选器的研制.该模块由高速前放电路,数字逻辑电路,强度调制器驱动电路,自动增益控制电路,以及强度调制器组成.模块能够从锁模激光器的连续脉冲中选出一个单脉冲,并保证消光比≥46 dB,插入损耗≤7 dB.文章重点介绍了系统的设计方案、工作原理、参数设计,以及特性曲线分析,并且对测试得到的主要参数进行了总结分析.     

低电压低功耗带通Sigma Delta调制器的设计

本文设计了一种符合双标准接收机要求的一位四阶带通调制器.为了实现低电压低功耗设计的要求,改进了调制器结构,并进行了从系统到电路模块的优化.采用0.35μm CMOS工艺,Hspice和Matlab联合模拟表明:在2V电源电压下,调制器在GSM和WCDMA系统中的DR分别为86dB和36dB,而功耗仅为10.5mW和12mW.     

2-1-1级联连续时间型ΣΔ调制器系统设计

高阶连续时间型ΣΔ调制器提供了一种有效的获得高分辨率、低功耗模数转换器的方法.提出了一种新型的2-1-1级联的连续时间型ΣΔ调制器结构.采用冲激不变法将离散时间型ΣΔ调制器变换为连续时间型ΣΔ调制器,利用Simulink对该调制器进行系统级建模和仿真,峰值信噪比达到105dB.分析了电路的非理想因素对调制器行为的影响,以获得90dB信噪比为目标确定了电路子模块指标.仿真结果表明,该结构能有效降低系统功耗,并验证了电路的可行性.     

三阶级联Sigma-Delta调制器设计

介绍2-1级联的三阶调制器设计结构，讨论信号比例系数、积分增益系数和电路非理想特性对调制器系统的性能影响：运用SIMULINK对调制器建模并仿真，模型中考虑．开关电容积分器的非理想因素对整个调制器的影响．并通过调整信号比例和积分增益系数来确定调制器性能和电路要求。当采样率为125和时钟频率2．50MHz时．该模型结构得到93dB的信噪失真比，可应用于实际的电路系统。     

22?Bit三阶Cascaded结构Sigma?Delta 调制器设计

设计一款可用于称重传感器ADC的高精度2?1级联结构Sigma?Delta调制器。在考虑非理想因素的前提下,采用Matlab/Simulink数学建模和仿真表明,在信号带宽为20 Hz,过采样率为1024的情况下,该调制器的信噪比为170.7 dB。采用Charter 0.35μm工艺对该调制器进行电路级设计并用Spectre仿真,电路信噪比为144.8 dB,该结果高于22位要求的135 dB。     

三阶1-1-1级联Σ-Δ调制器的设计及仿真

采用MASH结构,设计了一款三阶(1-1-1)级联Σ-Δ调制器;讨论了各个模块的增益系数,设计了数字校正电路,并运用Matlab/Simulink对调制器进行了行为级仿真.当输入信号带宽为20 kHz,过采样比为64时,仿真模型得到87.7 dB的信噪比,精度为14.28位.与其他结构的调制器相比,该调制器更加稳定,动态范围更大,可应用于处理音频信号的A/D转换器.     

一种基于DSP的高速光脉冲单选器的设计

设计了一种基于DSP的高性能脉冲单选器．重点介绍了系统的设计方案、工作原理、参数设计和特性曲线分析．该器件由光检测放大电路、脉冲峰值采样保持电路、反馈控制电路、强度调制器驱动电路和强度调制器以及DSP处理器等组成．该器件可以在外部调制信号的调制下,从脉冲激光器的输出脉冲序列中选出一个单脉冲．并实现输出消光比≥30dB,插入损耗≤7dB．     

一种级间运放共享的MASH结构Σ-Δ调制器

基于55 nm CMOS工艺,设计了一种级间运放共享的级联噪声整形(MASH)结构Σ-Δ调制器。采用2-2 MASH结构对调制器参数进行了设计。对经典结构的开关电容积分器进行了改进,并应用到调制器电路的设计中,实现了两级调制器之间的运放共享,在达到高精度的同时减少了运放的数量,显著降低了MASH结构调制器的功耗。仿真结果表明,在3.3 V电源电压下,调制器信噪失真比为111.7 dB,无杂散动态范围为113.6 dB,整体功耗为16.84 mW。     

Sigma Delta调制器高效行为级建模

提出一种宏模型和Verilog-A模型相结合的方法对两阶、1位量化的Sigma Delta调制器进行建模.对调制器中的关键模块采用宏模型建模,对功能性模块采用Verilog-A描述.在Cadence环境下,基于华虹NEC 0.25μmCMOS工艺对模块进行设计和仿真,并与实际电路模块仿真结果和仿真时间进行对比,给出两种情况下调制器总体电路的SNR仿真结果.结果显示:这种建模方法既达到了较高的精度,又取得了较快的仿真速度.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.