InGaAsP单量子阱激光器热特性研究

从InGaAsP单量子阱激光器热效应分析入手,采用自行设计的热封闭系统对808nm InGaAsP单量子阱激光器温度特性进行了研究.实验表明,在23℃～70℃的温度范围内,器件的功率由1.12W降到0.37 W,斜率效率由1.06 W/A降到0.47 W/A.实验测得其特征温度T0为321 K.激射波长随温度的漂移为0.45 nm/℃.其芯片的热阻为2.44℃/W.     

In1—xGaxAsyP1—y／InP多量子阱的光调制反射光谱

报道了组分y=0.76和0.84的晶格匹配In_(1-x)Ga_xAs_yP_(1-y)/InP多量子阱的子能带结构低温光调制反射光谱研究结果,在0.9～1.5eV光子能量范围观察到限制的电子与空穴子带间的激子跃迁,还观察到限制的电子子带与空穴连续态间的跃迁,由此比较直接地确定了价带的不连续量,得到不连续因子Q_v=0.65±0.02。     

半导体量子阱材料的调制光谱研究

我们采用光调制透射方法从In_xGa_(1-x)As/GaAs单量子阱样品测量了调制透射谱,得到了InGaAs量子阱中激子的清晰的调制结构.由电场调制原理对调制透射谱进行拟合,得到了激子的跃迁能量.结果与其他测量以及理论计算结果有较好的一致.     

双单量子阱材料的调制光谱研究

本文采用光调制光谱方法测量了GaAs/Ga_(1-x)Al_xAs双单量子阱材料的光调制反射光谱(PR),同时观察到了二个单量子阱中的带间激子跃迁,采用电场调制线形可以拟合出激子跃迁的能量,与简单的有限方势阱模型的计算结果符合。并且由调制反射光谱中的Franz-Keldysh振荡,计算得到材料表面内建电场约为29.3kV/cm。     

量子阱光反射光谱的电调制机理

研究了量子阱材料光反射光谱的电调制机理,根据斯塔克效应,对量子阱中非激子的带间跃迁和激子跃迁两种情况,分析了电场引起的介电函数的改变和相应的光反射调制光谱线形,对GaAs/AlGaAs量子阱所得光反射光谱的实验结果与理论分析基本符合.     

InGaAsP多量子阱微盘激光器

采用湿法化学腐蚀在气洙ＭＢＥＩｎＧａＡｓＰ多量子阱材料上制作了微盘型激光器，直径８μｍ的微盘激光器表现出很好的单模激射特性，阈值泵浦功率为１７０μＷ，激射线宽为１．５ｎｍ．以微腔激光器的宽激射线宽作了初步分析。     

InGaAsP单量子阱半导体微盘激光器研究

利用普通的液相外延和微加工技术成功地制备了ＩｎＧａＡｓＰ单量子陆微盘激光器，并从实验上观测到远低于普遍激光器阈值条件下的单模振荡，证实了微盘激光器中微盘很强的模式选择作用，反映了微盘的微腔特征。     

808nm量子阱激光器电流调制特性的实验研究

本文首次对高功率GaAs/GaAIAs量子阱激光器（808nm)的低频（100Hz-20KHz)电流调制特性进行了实验研究。结果表明：激光发射的接通延迟时间、阈值电流、正脉冲的占空比、平均功率、峰值功率随调制频率和电流而变化。     

Degradation of PL characteristics in strained layer multi-quantum well structure with atomic ordering structure

Clarification of the degradation mechanism of photoluminescence (PL) charac-teristics of InGaAsP compressively strained layer multi-quantum well (SL-MQW) structures on an InP substrate is studied to realize highly strained SL-MQW lasers with a large number of well layers. An unusual temperature-dependence of the PL peak wavelength is observed in the SL-MQW structure: the shift of the PL peak wavelength is reduced with change in measurement temperature. The degradation of PL characteristics is evaluated by the reduc-tion in the PL shift as well as an increase in PL linewidth and a decrease in PL peak intensity. The extent of the PL degradation increases with an increase in the number of well layers and an increase in strain. In the SL-MQW structure with degraded PL characteristics, the structure of CuPt-type atomic ordering is clearly observed for the first time in each barrier layer by high-resolution transmission electron microscope (HR-TEM) measurements. In the SL-MQW structure, neither dislocation nor three-dimensional nucleation is observed by TEM measurements. By increasing the growth temperature, elimination of the ordering structure as well as improvement in the PL characteristics have been confirmed even in the SL-MQW structure with a large amount of strain and a large number of well layers.     

GaAs/AlGaAs量子阱空间差分光调制反射光谱研究

本文报道了空间差分光调制反射光谱,指出了它与常规光调制反射谱的区别,与常规光调制反射光谱相比较,它具有更好的信噪比和灵敏度。利用该光谱方法对ＧａＡｓ／ＡｌＧａＡｓ量子阱的实验测量结果表明,空间差分光调制反射光谱具有丰富的光谱结构。     

Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs

We have studied the asymmetric broadening of the Raman spectra of In_xGa_1-xAs_yP_1-y grown on GaAs substrates by means of the spatial correlation model. The broadening phenomena was found to be enhanced in the region of immiscibility, in agreement with PL observations. In Raman measurements, the broadening is more enhanced in the samples grown on (100) substrates than in the samples grown on (111) substrates. The enhancement is attributed to the immiscibility included in the samples grown on (100) substrate.     

Cu/SiO2逐层沉积增强无杂质空位诱导InGaAsP/InGaAsP量子阱混杂

研究了Cu/SiO_2逐层沉积增强的无杂质空位诱导InGaAsP/InGaAsP多量子阱混杂(QWI)行为。在多量子阱(MQW)外延片表面,采用等离子体增强的化学气相沉积(PECVD)不同厚度的SiO_2,然后溅射5 nm Cu,在不同温度下进行快速热退火(RTA)诱发量子阱混杂。通过光荧光(PL)谱表征样品在QWI前后的变化。实验结果表明,当RTA温度小于700℃时,PL谱峰值波长只有微移,且变化与其他参数关系不大;当RTA温度大于700℃时,PL谱峰值波长移动与介质层厚度和RTA时间都密切相关,当SiO_2厚度为200 nm,退火温度为750℃,时间为200 s时,可获得54.3 nm的最大波长蓝移。该种QWI方法能够诱导InGaAsP MQW带隙移动,QWI效果与InGaAsP MQW中原子互扩散激活能、互扩散原子密度以及在RTA过程中热应力有关。     

铟镓砷磷半导体激光的生物特性及73例椎基底动脉供血不足者的治疗

通过对甸镓砷磷半导体激光和常用He-Ne激光生物特性进行初步比较,说明半导体激光对治疗椎基底动脉供血不足疗效较明显。     

InP和InGaAsP晶体上衍射光栅的刻制技术

采用全息光刻的技术,在InP 和InGaAsP晶体上刻制亚微米衍射光栅,获得较好的重复性和均匀性,并已应用于研制长波长分布反馈激光器.     

1.74μm压应变InGaAs/InGaAsP量子阱分布反馈激光器

制备了1.74μm脊波导结构压应变InGaAs/InGaAsP量子阱分布反馈激光器.采用低压金属有机化合物气相沉积法生长器件材料,应用应变缓冲层防止In的分凝.未镀膜的腔长为300μm的器件阈值电流为11.5mA,100mA时最大输出功率为14mW,边模抑制比为33.5dB.