MgO（001）表面上沉积MgO薄膜过程的分子动力学模拟

采用分子动力学方法模拟了MgO分子连续沉积于MgO（001）表面上的薄膜生长过程,分析了衬底温度和分子入射能对MgO分子在衬底表面上的扩散能力以及对衬底表面覆盖率的影响.模拟结果表明,随着衬底温度的升高,在衬底表面上沉积的MgO分子扩散能力增强,MgO薄膜层中空位缺陷变少.低温下,分子入射能的增大有助于提高衬底表面覆盖率;高温下,表面覆盖率随入射能增大到3.0 eV时达到最大值,入射能继续增大,表面覆盖率减小. 关键词： MgO薄膜生长 分子动力学 计算机模拟 表面扩散     

硼/氮原子共掺入金刚石的晶格损伤及其退火过程的计算机模拟

借助于Tersoff势函数和分子动力学模拟技术研究了室温下500eV的能量粒子硼(4个)和氮(8个)共掺入金刚石晶体中所引起的损伤区域内晶体微细观结构的变化特征以及后续加热退火晶体结构的演变特征.结果表明：随着掺入原子数目的增加，受影响的区域范围渐渐增大，12个粒子全部注入金刚石晶体后局部影响区域的半径达0.68nm，损伤区域中心的三配位原子数增加而四配位数原子数量减少.加热退火过程中损伤中心区域的原子发生扩散，部分原子的扩散距离达到4个晶格间距.加热退火使损伤区域中心原子间的平均键长趋于金刚石结构的键长.退火后薄膜中注入的杂质原子向表面扩散引起应力分布产生变化，杂质原子经过一系列的扩散过程能够到达空位的位置，减少薄膜中空位数量，减小晶格畸变程度，原子向表面扩散引起应力产生重新分布，薄膜中应力峰值的峰位向薄膜表面发生移动，局部应力集中程度降低.通过不同退火温度的比较发现低温下退火(800℃)更有利于空位的运动和晶格损伤的恢复从而提高晶格质量. 关键词： 金刚石共掺杂 分子动力学 退火     

Al表面的"类液"结构及其自扩散通道

应用分子动力学方法,采用嵌入势模型在熔点下和熔点上对Al(001),(110)和(111)表面的原子结构和自扩散现象进行研究.发现这些表面的第一层原子在低于熔点时,Al(110)面在700±10 K,Al(001)面在 860±10 K,Al(111)面在 930±10 K呈现明显自扩散且最终转变为"类液"结构,而其余各层仍保留有序状态.对这种"类液"结构进行均方位移、结构有序参数、径向分布函数和z向粒子密度分析,发现其结构和扩散行为与熔化的Al表面不同,并能在一定温度区间稳定存在.在"类液 关键词： 表面结构 分子动力学 自扩散     

硅晶体中点缺陷结合过程的分子动力学研究

采用分子动力学方法模拟研究了硅晶体中的空位和间隙原子的结合过程. 研究中采用了Stilliger-Weber三体经验势描述原子间的相互作用, 系统分别在低温300K和高温1400K进行弛豫. 计算中发现空位和间隙原子倾向于通过<111>方向结合，而<110>方向上存在着势垒. 通过势垒值的计算, 对Tang和Zawadzki势垒计算值的差异进行了解释. 关键词： 分子动力学 空位与间隙原子 扩散     

金刚石晶界辅助石墨烯沉积的成核机理仿真

石墨烯在新基材上的生长一直是被关注的焦点,而在以金刚石多晶体为基底沉积石墨烯的成核机理方面的研究对石墨烯大规模的制备具有重要的现实意义.本文采用反应性分子动力学仿真技术,模拟了镍催化双晶金刚石辅助石墨烯沉积生长的过程,研究了金刚石晶界对石墨烯成核生长过程中动力学行为的影响.研究结果表明晶界碳原子可作为补充碳源扩散至镍自由表面,参与石墨烯的成核生长.论文探究了温度对碳原子扩散行为的影响,发现当沉积温度为1700 K时,利于晶界碳原子在镍晶格中扩散,有效提高石墨烯成核密度;探究了沉积碳源流量对石墨烯表面质量影响,发现1700 K下采用较低的碳沉积速率1 ps–1有利于获得最佳的石墨烯表面质量.本文的研究结果不仅为金刚石晶界辅助石墨烯沉积生长提供了有效的理论模型和机理解析,还揭示了沉积温度和沉积碳源流量对生长石墨烯表面质量的影响规律,为石墨烯/金刚石多晶体异质结构在超精密制造和微电子领域的实际应用提供理论基础.     

异质原子在Cu（001）表面扩散的分子动力学模拟

采用分子动力学方法模拟单个增原子Ag,Pd和Cu在Cu（001）表面上的扩散过程.通过对自扩散和异质扩散过程中扩散机制的观察,统计三种不同的增原子在不同温度下的扩散频率,拟合给出扩散势垒和扩散频率的指前因子,并与扩散势垒的静力学计算结果进行比较.结果表明：在800 K以下时,三种增原子均以简单跳跃机制为主扩散,与衬底不互溶的Ag增原子的跳跃频率最大,与衬底互溶的Pd增原子的跳跃频率最小.同质增原子与异质增原子的扩散频率和温度的关系均较好地符合Arrhenius公式,由Arrhenius公式拟合给出的三种不同增原子的扩散势垒与表面结构和增原子表面结合能有关.Pd和Cu增原子从跳跃机制为主向交换机制为主的转换温度分别在825和937 K左右. 关键词： 表面扩散 分子动力学模拟     

低能原子沉积在Pt(111)表面的分子动力学模拟

采用嵌入原子方法的原子间相互作用势,利用分子动力学方法模拟了六种贵金属原子(Ni,Pd,Pt,Cu,Ag,Au)分别在Pt(111)表面低能沉积的动力学过程.结果表明:随着入射能量从0.1eV升高到200eV,基体表面原子是按层迁移的,沉积过程对基体表面的影响和沉积原子在基体表层的作用均存在两个转变能量(ET1≈5eV,ET2≈70eV).当入射能量低于5eV时,基体表面几乎没有吸附原子和空位形成,沉积原子在基体表层几乎没有注入产生;当入射能量在5—70eV范围内时,沉积原子在基体表层有注入产生,其注入深度小于两个原子层,即为亚注入,此时吸附原子主要由基体表层原子形成,基体表面第三层以下没有空位形成;当入射能量高于70eV时,沉积原子的注入深度大于两个原子层,将会导致表面以下第三层形成空位,并且空位产额随入射能量的升高而急剧增加.基于分子动力学模拟的结果,对低能沉积作用下的薄膜生长以及最优沉积参数的选择进行了讨论.     

In在Al(001)表面偏析的模拟

通过一种空位模型详细的描述了In在Al(001)表面的扩散偏析过程,利用周期性密度泛函理论方法计算了这个偏析过程中每步构型的能量和In原子扩散的能量壁垒,并对可能的偏析机理进行分析.结果表明:In原子从Al(001)表面第二层扩散偏析至表面层时,系统的能量降低了0.64 eV,最大的扩散迁移壁垒为0.34 eV;而从表面更内层向表面第二层扩散时系统能量基本保持不变,扩散需要克服的能量壁垒为0.65 eV,说明In原子在Al(001)表面只能由体内向表面扩散偏析.In在Al(001)的清洁表面具有强烈的偏析趋势,在热力学上是容易进行的. 关键词： 密度泛函理论 表面偏析 扩散 Al合金     

温度对金刚石涂层膜基界面力学性能的影响

利用分子动力学方法建立了硬质合金基底金刚石涂层膜基界面模型, 并采用Morse势函数和Tersoff势函数相互耦合的方法来表征模型内原子间的相互作用关系, 在此基础上对不同温度(0–800 K)条件下硬质合金基底金刚石涂层膜基界面的力学性能进行了分子动力学仿真计算. 结果表明: 当温度由0 K上升到800 K的过程中, 金刚石涂层膜基界面拉伸强度呈下降趋势, 并且在0–300 K范围内下降趋势明显, 在300–800 K范围内下降趋势缓和; 体系能量随温度的变化具有相同的下降趋势.     

低能单个Cu原子与Cu13团簇沉积到Fe（001）表面的比较

本文利用分子动力学模拟方法对相同初始沉积条件下的单个Cu原子和Cu13团簇与Fe(001)表面的相互作用分别进行了模拟研究, 并将两者的模拟结果进行了比较分析. 单个Cu原子和Cu13团簇的初始入射能量范围均为1eV/atom、3eV/atom、5eV/atom和10eV/atom, 初始入射角度均为0o、10o、30o和45o, 衬底温度分别为100K、300K和800K. 对单个Cu原子和Cu13团簇的原子动能、质心高度、迁移距离和最终沉积形貌进行了分析, 对比研究了相同初始沉积条件下单个Cu原子和Cu13团簇在沉积过程中和沉积效果上的具体差异. 模拟结果表明: 单个Cu原子和Cu13团簇与Fe(001)表面的相互作用机制存在差异, Cu13团簇表现出显著的集体效应. 在特定沉积条件下, 由于Cu13团簇的集体效应, 导致Cu13团簇与Fe(001)表面的结合能力和在Fe(001)表面上的扩散能力均强于单个Cu原子.     

The molecular dynamic study of anharmonic effects at Cu(111) and Ag(111) surfaces in the presence of Cu- and Ag-trimer island

The molecular dynamics (MD) technique based on semi-empirical potentials, is used to carry out the diffusion of Cu- and Ag-trimer on Cu- and Ag(111) surface at 300, 500 and 700 K temperatures. The constant energy MD simulation elaborates the anharmonic effects at the surface such as fissures, dislocations and vacancy creation, in the presence of island. The fissures and dislocations formed are in the range of 1.5–4 Å and 1–7 Å, respectively, from the island's position. The Cu and Ag islands both diffuse easily on Cu(111) surface, manipulate that the trend of diffusion is faster on Cu surface as compared to Ag surface. The process of breaking and opening of the island has also been observed. Moreover, a surface atom popped-up at 700 K by creating a vacancy near the Cu island on Ag surface. The rate of diffusion increases with the increase in temperature, both for homo- and hetero-cases.     

Diamond-graphite phase transition in ultradisperse-diamond clusters

A systematic study of the diamond-graphite structural phase transition in ultradisperse-diamond clusters obtained by the detonation technique is reported. Samples of two types, differing in the kinetics of detonation-product cooling, were investigated. The phase transition was achieved under heating in an inert atmosphere in the temperature range 720–1400 K. The transition was identified by Raman scattering and x-ray diffraction data. Raman and x-ray characterization showed the ultradisperse diamond, irrespective of the cooling rate used, to be cluster material possessing diamond structure with a characteristic nanocrystal size of 43 Å. The diamond-graphite phase transition in ultradisperse diamond is shown to start from the cluster surface inwards at T _pt≈1200 K, i.e. at substantially lower temperatures than is the case with bulk diamond single crystals.     

Study of vacancy on diamond (1 0 0) (2 × 1) surface from first-principles

Structure and energy related properties of neutral and charged vacancies on relaxed diamond (1 0 0) (2 × 1) surface were investigated by means of density functional theory. Calculations indicate that the diffusion of a single vacancy from the top surface layer to the second layer is not energetically favored. Analysis of energies in charged system shows that neutral state is most stable on diamond (1 0 0) (2 × 1) surface. The multiplicity of possible states can exist on diamond (1 0 0) surface in dependence on the surface Fermi level, which supports that surface diffusion of a vacancy is mediated by the change of vacancy charge states. Analysis of density of states shows surface vacancy can be effectively measured by photoelectricity technology.     

Brownian motion of 2D vacancy islands by adatom terrace diffusion.

We have studied the Brownian motion of two-dimensional (2D) vacancy islands on Ag(110) at temperatures between 175 and 215 K. While the detachment of adatoms from the island and their diffusion on the terrace are permitted in this temperature range, the periphery diffusion of single adatoms is prohibited. The present scanning tunneling microscopy results provide the first direct experimental proof that the Brownian motion of the islands follows a simple scaling law with terrace diffusion being the rate limiting process. The activation energy of the vacancy island motion is determined to 0.41 eV.     

Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands

Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 10(2)-10(3) times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, the growth of a compressive SiGe film is rather different from that of a tensile film. The diffusion disparity between Si and Ge is also greatly enhanced on the strained Ge islands compared to that on the Ge wetting layer on Si(001), explaining the experimental observation of Si enrichment in the wetting layer relative to that in the islands.     

Fe-Cr合金辐照空洞微结构演化的相场法模拟

Fe-Cr合金作为包壳材料在高温高辐照强度等极端环境下服役,产生空位和间隙原子等辐照缺陷,辐照缺陷簇聚诱发空洞、位错环等缺陷团簇,引起辐照肿胀、晶格畸变,导致辐照硬化或软化致使材料失效.理解辐照缺陷簇聚和长大过程的组织演化,能更有效调控组织获得稳定服役性能.本文采用相场法研究Fe-Cr合金中空洞的演化,模型考虑了温度效应对点缺陷的影响以及空位和间隙的产生和复合.选择400—800 K温度区间、0—16 dpa辐照剂量范围的Fe-Cr体系为对象,研究在不同服役温度和辐照剂量下的空位扩散、复合和簇聚形成空洞的过程.在400—800 K温度区间,随着温度的升高,Fe-Cr合金空洞团簇形核率呈现出先升高后下降的趋势.考虑空位与间隙的重新组合受温度的影响可以很好地解释空洞率随温度变化时出现先升高后降低的现象.由于温度的变化将影响Fe-Cr合金中原子离位阀能,从而影响产生空位和间隙原子.同一温度下,空洞半径和空洞的体积分数随辐照剂量的增大而增大.辐照剂量的增大,级联碰撞反应加强,空位与间隙原子大量产生,高温下空位迅速的扩散聚集在Fe-Cr合金中将形成更多数量以及更大尺寸的空洞.     

Kinetic Monte Carlo simulations of Pd deposition and island growth on MgO(1 0 0)

The deposition and ripening of Pd atoms on the MgO(1 0 0) surface are modeled using kinetic Monte Carlo simulations. The density of Pd islands is obtained by simulating the deposition of 0.1 ML in 3 min. Two sets of kinetic parameters are tested and compared with experiment over a 200-800 K temperature range. One model is based upon parameters obtained by fitting rate equations to experimental data and assuming the Pd monomer is the only diffusing species. The other is based upon transition rates obtained from density functional theory calculations which show that small Pd clusters are also mobile. In both models, oxygen vacancy defects on the MgO surface provide strong traps for Pd monomers and serve as nucleation sites for islands. Kinetic Monte Carlo simulations show that both models reproduce the experimentally observed island density versus temperature, despite large differences in the energetics and different diffusion mechanisms. The low temperature Pd island formation at defects is attributed to fast monomer diffusion to defects in the rate-equation-based model, whereas in the DFT-based model, small clusters form already on terraces and diffuse to defects. In the DFT-based model, the strong dimer and trimer binding energies at charged oxygen vacancy defects prevent island ripening below the experimentally observed onset temperature of 600 K.     

Adsorption,diffusion and self-diffusion on tungsten surfaces with adsorbed palladium

The influence of a Pd adsorption layer on the surface self-diffusion of tungsten has been measured using a field emitter technique. By adsorption of 1.2 × 10¹⁵ Pd atoms/cm² — measured by high energy ion backscattering — the surface self-diffusion energy decreases from 70 to 54 kcal/mole, and the diffusivity from 0.95 to about 0.2 cm²/s, which corresponds to an increase of the diffusion coefficient by a factor 40 at 1600 K and 80 at 1400 K. Furthermore are determined (1) adsorption lifetimes in adsorption-desorption equilibria, (2) the isosteric adsorption heat (103 kcal/mole), and (3) the coefficient of Pd surface diffusion on W resulting in diffusion energies of 32 kcal/mole around (001) and 17 kcal/mole around (111).     

Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition

Laterally enlarged single crystal diamond is grown on(001) diamond substrates by microwave plasma chemical vapor deposition. Based on the largest side-to-side width of the seed of 7.5 mm, we achieve the as-grown epilayer with the width of about 10 mm between the same two sides. The luminescence difference between the broadened part of the single crystal diamond and the vertically epitaxial part is investigated by characterizing the vertical cross section of the sample, and the possible growth mechanism is suggested. Vertical epitaxy on the top(001)surface and lateral growth on the side surfaces occur simultaneously, and thus the growth fronts along the two directions adjoin and form a coalescence zone extending from the edge of the substrate towards the edge of the expanded single crystal diamond top surface. The luminescence intensity of the nitrogen-vacancy center is relatively high in the coalescence zone and a laterally grown part right below, which are attributed mainly to the higher growth rate. However, stress change and crystal quality change are negligible near the coalescence zone.     

Mössbauer study of high-temperature diffusion in magnetite

A Mössbauer investigation has been made of the temperature dependence of cation diffusion in magnetitie, Fe_3-δO₄. In the temperature range 1100 to 1400°C, spectral line shapes are influenced characteristically by cation diffusion processes. At high oxygen partial pressures,Po₂, the in-situ spectra give clear evidence of rapid migration of cations on octahedral sites by a vacancy mechanism, while interstitial processes involving the tetrahedrally coordinated iron ions dominate at lowPo₂.