快速退火Sol—Gel PZT铁电薄膜的性能研究

报道了以乙酸铅、乙酸氧锆和钛酸正丁酯为原料，用溶胶-凝胶（Sol-Gel）法，经多次旋转涂膜，在Pt／Ti／SiO2／Si衬底上制备了PZT凝胶薄膜。用快速退火（RTA）作薄膜的热解和结晶热处理，制备了以（100）取向为主的PZT薄膜。用X射线衍射（XRD）和RT66A测试了膜的结晶取向、漏电流、电滞回线和抗疲劳性能等。结果表明，经RTA处理的溶胶凝胶法PZT膜具有良好的性能。     

铁酸锌纳米粒子的制备与表征

研究了草酸盐热分解法制备ＺｎＦｅ２Ｏ４纳米粒子,并用ＸＲＤ和ＴＥＭ技术进行了初步表征,在３００℃焙烧１ｈ后,所制备的球形粒子粒径约１０ｎｍ,大小均匀。     

离子束增强沉积Al-N共掺杂ZnO薄膜的制备

用Al2O3粉体与ZnO粉体均匀混合，压制成溅射靶。在Si和SiO2／Si衬底上。用离子束增强沉积（IBED）方法对沉积膜作Ar^＋／N^＋注入，制备Al-N共掺杂氧化锌薄膜（ANZO）。在氮气氛中作适当的退火，可以方便地获得取向单一、结构致密、性能良好的共掺杂ZnO薄膜。探索用IBED方法在Si和SiO2衬底上制备优质掺杂薄膜的可能性。初步研究了ANZO共掺杂薄膜的结构、电学和光学性能。     

纳米晶铁的制备及其性能

论述了高能机械球磨法制备纳米晶铁的原理及工艺，并讨论了纳米晶铁的磁性，ＸＲＤ及Ｍｏｓｓｂａｒｕｅｒ谱结果。     

离子束增强沉积Al-N共掺杂ZnO薄膜的制备

用Al2O3粉体与ZnO粉体均匀混合,压制成溅射靶。在Si和SiO2/Si衬底上,用离子束增强沉积(IBED)方法对沉积 膜作Ar+/N+注入,制备Al-N共掺杂氧化锌薄膜(ANZO)。在氮气氛中作适当的退火,可以方便地获得取向单一、结构致 密、性能良好的共掺杂ZnO薄膜。探索用IBED方法在Si和SiO2衬底上制备优质掺杂薄膜的可能性。初步研究了ANZO共掺 杂薄膜的结构、电学和光学性能。     

BaTiO3薄膜的Sol-Gel制备工艺及性能

利用溶胶－凝胶法（Sol-Gel)在Pt/Ti/SiO2/Si(100)衬底上制备了BaTiO3薄膜，研究了不同退火条件下BaTiO3薄膜的晶相结构及表面形貌，测试了BaTiO3薄膜的电学性能。发现经900℃、120min退火处理的BaTiO3薄膜的介电－温度（εr-T)关系具有明显的弥散相变特性。     

电化学沉积法制备稀土掺杂氧化钇荧光薄膜的发光性能

通过改变氧化钇薄膜中掺杂稀土元素的种类,来控制发光薄膜的荧光发射波长.利用电化学沉积法制备稀土掺杂氧化钇荧光薄膜.电化学沉积法制备的薄膜结晶效果好,掺杂离子分布较均匀,且不需要高温高压或者真空条件,成本很低.所制备的Y2O3:Ln荧光发光薄膜经XRD分析具有立方晶体结构;不同稀土掺杂的氧化钇呈现出不同的表面形貌;掺杂的Ln离子均匀地分布在薄膜中,经测试所有的Y2O3:Ln荧光发光薄膜都显示出较强的发射强度,且发光波长随着掺杂离子的不同而不同:Y2O3:Er3+发绿光,Y2O3:Ce3+发黄绿光,Y2 O3:Sm3+发蓝光,Y2O3:Pr3+发橙光.因此,电化学沉积法可用于制备具有不同发光波长的氧化钇荧光薄膜.     

Sol-Gel法制备BST铁电薄膜及性能研究

采用溶胶-凝胶法在LaNiO3基底上制备了Ba0.5Sr0.5TiO3(BST)铁电薄膜。研究了不同退火温度对薄膜结晶性能的影响,并测试了各种BST薄膜的介电性能、铁电性能。实验结果表明经700℃退火处理的BST铁电薄膜具有比较优越的电性能,在测试频率为1 kHz时,700℃退火的BST薄膜的介电常数为384.1,介电损耗为0.018 6,在室温下外加偏压为1 V时,700℃退火的BST薄膜漏电流密度达到6.7×10-8A/cm2,其剩余极化强度和矫顽场分别为4.85μC/cm2和65.2 kV/cm。     

离子注入结合热退火方法制备ZnO薄膜及其表征

采用离子注入技术,将Zn离子注入到非晶SiO2中.注入后样品在氧气氛围下分别经600℃、700℃、800℃退火.用光学吸收谱、扫描电子显微镜（SEM）、透射电子显微镜（TEM）对注入样品以及退火的样品进行分析.实验结果表明：经700℃退火后,注入形成的Zn粒子迁移到衬底表面并形成ZnO薄膜.由该方法制备的ZnO薄膜实用于器件研制,具有很好的应用前景.     

铁电薄膜材料及集成铁电器件的相关问题

铁电薄膜材料及集成铁电器件自20世纪90年代以来一直受到人们的关注，就目前该领域研究中的几个基础问题，如生长动力学、特性退变、异质结界面以及如何进一步发展铁电薄膜和集成铁电器件等提出了见解。     

碳膜制备及应用研究进展

碳膜是一类很有发展和应用前景的新型材料,其优良的性能受到了广泛关注．本文评述了国内外近年来掺金属粒子碳膜、类金刚石碳膜、气体分离用碳膜、纳米碳膜等的制备方法及各自应用领域的研究进展,探讨了影响碳膜性能的因素,介绍了碳膜结构和性能的表征方法．作者认为,未来几年内对碳膜的制备研究和应用开发研究还将会进一步深入和发展,研究应致力于简化碳膜的制备过程、寻求廉价易得的用于碳膜制备的碳源,同时更加关注碳膜的应用开发．     

The Influence of Annealing Temperature on the Structure and Properties of TiO2 Films Prepared by Sputtering

The TiO₂ films were prepared on slides by dc reactive magnetron sputtering, then the samples were annealed at 300°C, 350°C, 400°C, 450°C, 500°C and 550°C, respectively. X-ray diffraction (XRD) was used to obtain the TiO₂ film crystalline structure; X-ray photoelectron spectroscopy (XPS) was used to study the film surface stoichiometries; surface morphologies were studied by scanning electron microscopy (SEM); the contact angle was tested to indicate the TiO₂ film wettability; and the photocatalytic activity testing was conducted to evaluate the photocatalysis properties. The photocatalytic activity and contact angle testing results were correlated with the crystallinity, surface morphologies and surface ·OH concentration of TiO₂ films. The samples with a higher polycrystalline anatase structure, rough surface and high ·OH concentration displayed a better photoinduced hydrophilicity and a stronger photocatalysis. Funded by the National “863” Project Foundation (No. 2003LG0034)     

Effects of the annealing heating rate on sputtered aluminum oxide films

Al_xO_y films by DC reactive magnetron sputtering were annealed in air ambient at 500 ℃for 1 h with different heating rates of 5,15,and 25 ℃/min.Then heat treatments at 900 ℃ were carried out on these 500 ℃-annealed films to simulate the high-temperature application environment.Effects of the annealing heating rate on structure and properties of both 500 ℃-annealed and 900 ℃-heated films were investigated systematically.It was found that distinct γ-Al_2O_3 crystallization was observed in the 900 ℃-heated films only when the annealing heating rates are 15 and 25 ℃/min.The 500 ℃-annealed film possessed the most compact surface morphology in the case of 25 ℃/min.The highest microhardness of both 500 ℃-annealed and 900℃-heated films were obtained when the annealing heating rate was 15 ℃/min.     

退火处理对脉冲激光沉积制备ZnS薄膜的影响

利用射频辅助脉冲激光沉积技术,研究了退火处理对制备ZnS薄膜的影响.利用X射线衍射(XRD)和扫描电子显微镜(SEM)对制备样品的结构、形貌特性进行了表征.结果表明:退火处理更有利于ZnS薄膜的发光.     

Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing

Nano-ZnO thin films composed of nanoparticles with sizes of 10-16 nm on silicon substrates at low temperature were prepared by sol-gel method.By placing the nano-ZnO thin films at room temperature or annealing at 100°C in air for 10 h intermittently,within a total 70 h annealing time,the evolution of PL spectra of the nano-ZnO thin films were studied in detail.As the annealing time increases,the PL peaks shift from violet to blue and green bands.The PL peaks at violet and blue bands decrease with the annealing time,but the PL peaks at green band are opposite.The PL spectra are related to the defects in the nano-ZnO thin films.The PL peaks positioned at 430 nm are mainly related to defects of zinc interstatials(Zni),oxygen vacancies and(Vo);the ones at 420 nm to oxygen interstitials(Oi),Zinc vacancies(Vzn),Zni ;and the ones at 468 nm to Vzn,Zni,and charged oxygen interstatials(Vo+).The green luminescence is related to Oi,Vo and Zni.The evolutions of PL spectra and the defects are also related to the concentrations of Zn in the thin films,the thicknesses of the films and the annealing time.For the films with 0.5 M and 1.0 M Zn concentrations,after 20 h and 30 h annealing in air at 100°C,respectively,either placing them in air at room temperature or continuing anneal in air at 100°C,the PL spectra are stable.Under the low temperature annealing,Zni decreases with the annealing time,and Oi increases.Sufficient Oi favors to keep the nano-ZnO thin films stable.This result is important to nano-ZnO thin films as electron transport layers in inverted or tandem organic solar cells.     

Sputtering preparation and magneto-optical properties of GdTbFeCo thin films

Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target.The influences of sputtering parameters on the magneto-optical properties GdTbFeCo thin film were investigated by the variable control method.And the influence mechanism was analyzed in detail.After the sputtering parameters were optimized,it was found that when the distance between target and substrate was 72 mm,the thin film thickness was 120 nm,and the sputtering power,sputtering pressure and sputtering time was 75 W,0.5 Pa and 613 s,respectively,the coercivity with perpendicular anisotropy could be as high as 6735 Oe,and the squareness ratio of the hysteresis loop was almost equal to 1.     

壳聚糖与己内酯接枝材料膜的制备及性能研究

将己内酯低聚物成功地接枝到壳聚糖分子上，制备出一种新型的壳聚糖材料膜，用化学分析及红外光谱表征结构，并测试了相关性能，结果表明，在一定温度及催化剂下，已内酯低聚物与壳聚糖分子接枝混杂，形成的材料膜改善了壳聚糖膜的脆性，并显示出良好的降解性。     

Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films

Leakage behavior and distortion of the polarization hysteresis loop in ferroelectric thin films are analyzed by applying a totally depleted asymmetric back-to-back Schottky model, with the Pt/Pb(Zr, Ti)O3/Pt ( Pt/ PZT/Pt) sandwich structural thin film capacitor as an example. Some interesting phenomena resulting from the asymmetric interfaces, such as the leakage current level, the flat-band voltage, the disclosure of the hysteresis loop, and the change in the remanent polarization and coercive field, as well as the vertical drift of the polarization hysteresis loop, are discussed in detail. The calculated results are also verified with experiments.     

The preparation of grid-textured V_2O_5 films and their potential applications in gas sensing

Novel nano-structured films of V_2O_5 are prepared by pulsed laser deposition method. Nanoscaled V_2O_5 ridges lie on SrTiO_3 substrate and construct into grid-textured structures. Structural properties of the films have been analyzed by scanning electron microscope, X-ray diffraction and transmission electron microscope. The films have enlarged surface-to-volume ratio due to the ridge-channel structure which makes them applicable to gas sensing. Therefore, gas sensors based on the V_2O_5 films have been assembled which present reliable sensing properties to gaseous acetone, and ethanol at room temperature. The physical-chemical reactions between adsorbed O_2~– and testing gases are the possible reason for this property.