共查询到20条相似文献,搜索用时 78 毫秒
1.
高性能集成电路要求改进封装设计和封装材料,以便适应更高I/O密度和工作电压的需求。封装材料之间的粘结问题,对于维护封装在各种环境条件下的完善性和工作性能是头等重要的。本文对影响粘结性能和界面完善性的诸多因素进行了概述。专门举例讨论了TBGA封装结构中存在的一些界面,并介绍了几种分析方法及粘结测量技术的应用。 相似文献
2.
3.
4.
对PDSOI CMOS 器件及电路进行总剂量辐照的加固势必会引起其性能下降,这就需要在器件及电路加固和其性能之间进行折中.从工艺集成的角度,对PDSOI CMOS器件和电路的总剂量辐照敏感区域:正栅氧化层、场区氧化层及埋氧层提出了折中的方法.采用此种方法研制了抗总剂量辐照PDSOI SRAM ,进行总剂量为2×105 rad(Si)的辐照后SRAM的各项功能测试均通过,静态电流的变化满足设计要求,取数时间:辐照前为26.3 ns;辐照后仅为26.7 ns. 相似文献
5.
6.
新型封装堆叠(PoP)封装存储器的结构与常规封装不同,导致现行破坏性物理分析方法不完全适用于新型PoP存储器。对新型PoP存储器结构分析,找出了影响新型PoP封装存储器可靠性的典型缺陷。以某型号PoP封装存储器为例,运用3D-X-ray、金相切片、叠层芯片分离、非顶层芯片内部检查等关键技术,提出了一套适用性强、效率高的综合性破坏性物理分析方案,并通过实例验证了新型PoP封装存储器可靠性评估方法的有效性,同时也为后续标准的修订及其他先进封装器件的破坏性物理分析提供依据和帮助。 相似文献
7.
本文比较系统地讨论了高速电子开关用于系统回避技术的几种典型方法,并就这些方法作了简要性能比较。认为,优化的f方案比较适合于所涉及的应用环境。同时,文中较详尽地介绍了实现f方案的具体方法和各种电路加固和工艺加固措施,以及一系列关键技术,提出了利用预辐射手段提高开关抗中子辐射能力的设想。 相似文献
8.
微电子器件的抗辐射加固技术 总被引:6,自引:0,他引:6
对各类微电子材料的抗辐射特性进行了分析,对Si双极器件和Si CMOS器件、GaAs微波功率器件、新兴光电器件件-VCSEL、LED以及MEMS的抗辐射加固技术进行了探讨,对几种空间单粒子效应(SEE)进行了研究。 相似文献
9.
10.
通过研究铁电存储器、磁性随机存储器、相变存储器和阻变存储器4种新型非易失性存储器的抗辐射能力,总结了每种非易失性存储器的总剂量效应和单粒子效应。针对总剂量效应和单粒子效应进行了对比与分析,得到了目前的新型非易失性存储器的抗辐射能力仍然取决于存储单元以外的互补金属氧化物半导体(CMOS)外围电路的抗辐射能力。该结论为抗辐射非易失性存储器的研究提供了参考。 相似文献
11.
Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total dose irradiation hardened of P-channel VDMOS has been proposed, and the structure is simulated and demonstrated with a -150 V P-channel VDMOS. The results show that the peak current density is reduced from 5.51 × 10^3 A/cm^2 to 2.01 × 10^3 A/cm^2, and the changed value of the breakdown voltage is 2.5 V at 500 krad(Si). Especially, using 60Co and X-ray to validate the results, which strictly match with the simulated values, there is not any added mask or process to fabricate the novel structure, of which the process is compatible with common P-channel VDMOS processes. The novel terminal structure can be widely used in total irradiation hardened P-channel VDMOS design and fabrication, which holds a great potential application in the space irradiation environment. 相似文献
12.
13.
14.
Xin Yang Chen Luo Xiyue Tian Fang Liang Yin Xia Xinqian Chen Chaolun Wang Steve Xin Liang Xing Wu Junhao Chu 《半导体学报》2021,42(1):57-71
Non-volatile memory(NVM)devices with non-volatility and low power consumption properties are important in the data storage field.The switching mechanism and packaging reliability issues in NVMs are of great research interest.The switch-ing process in NVM devices accompanied by the evolution of microstructure and composition is fast and subtle.Transmission electron microscopy(TEM)with high spatial resolution and versatile external fields is widely used in analyzing the evolution of morphology,structures and chemical compositions at atomic scale.The various external stimuli,such as thermal,electrical,mechanical,optical and magnetic fields,provide a platform to probe and engineer NVM devices inside TEM in real-time.Such ad-vanced technologies make it possible for an in situ and interactive manipulation of NVM devices without sacrificing the resolu-tion.This technology facilitates the exploration of the intrinsic structure-switching mechanism of NVMs and the reliability is-sues in the memory package.In this review,the evolution of the functional layers in NVM devices characterized by the ad-vanced in situTEM technology is introduced,with intermetallic compounds forming and degradation process investigated.The principles and challenges of TEM technology on NVM device study are also discussed. 相似文献
15.
16.
17.
A considerable body of information is available in the literature concerning the effects of high energy electron irradiation
on the formation of deep trapping levels in GaAs. Most of these studies have dealt with bulk material or material grown by
vapor phase epitaxy (VPE). However, whether these studies are representative of GaAs epilayers grown by metalorganic vapor
phase epitaxy (MOVPE) or molecular beam epitaxy is not clear, particularly when the gallium and arsenic species used in the
growth and hence optimal conditions for growth, differ widely between techniques. In fact, the results reported in this study
show significant differences in the behavior of material produced by these techniques. Deep level transient spectroscopy (DLTS)
is used in this work to characterize the deep electron traps formed during 7 MeV electron irradiation. In addition, the current
voltage characteristics of the Schottky diodes used in the DLTS studies have been evaluated before and after irradiation to
ascertain the effects of irradiation on device performance. It has been found that an additional trapping level is produced
in MOVPE-grown material of high background doping and that the carrier removal in this material is not a simple function related
to increased electron fluence as observed in previous studies on VPE material. 相似文献
18.
在研究低能电子束照射绝缘物时在二次电子返回特性的基础上,通过绝缘物表面照射微区和衬底之间的有效电容,获得了表面电位和二次电子信号电流在表面电荷积累过渡过程中随照射条件的变化关系,建立了电子束照射覆盖有绝缘膜的IC芯片时形成静态电容衬度的理论模型.从理论上分析了电子束照射条件和芯片内部形貌、材料参数对静态电容衬度的影响,解释了在扫描电镜实验中的最大衬度现象及其对应的最佳电子照射条件. 相似文献
19.
芯片冷却技术中的微/纳米材料与结构的研究进展 总被引:4,自引:0,他引:4
分析和讨论了芯片冷却技术中应用到的微/纳米材料和结构方面的进展,并对其应用前景作了一定展望。这些内容对于发展新的芯片冷却技术及相关高热流密度器件的冷却应用具有重要的参考价值。 相似文献