Al2O3陶瓷与金属镍的活性钎焊研究

由于物理和化学性质的差异,实现陶瓷与金属的连接比较困难.本实验使用Ag-Cu-Ti活性钎料钎焊镍与Al2O3陶瓷.对钎焊后的试件进行剪切试验,确定接头强度最高时的温度为1000℃,而温度低于960℃时无法成功钎焊镍与陶瓷,温度高于1000℃会使钎焊接头强度下降.采用材料测试分析方法对钎焊接头组织进行分析,发现Cu在接头内平均分布,Ag呈聚集态,而Ti分布在接头的两侧.反应产物中的元素包括Cu,Ti,Al,Zr,O等,Ti,Cu与Al2O3陶瓷发生反应在界面处生成复杂化合物,从而实现陶瓷与金属的连接.     

SiC陶瓷与316L不锈钢真空活性钎焊北大核心CSCD

采用Ag-Cu-Ti活性钎料,通过真空钎焊方法进行了SiC陶瓷与316L不锈钢的连接,研究了接头的界面组织、特征点成分和物相,并探讨了钎焊温度(800～930℃)、保温时间(0～30 min)对接头界面组织和连接强度的影响。结果表明,SiC陶瓷与316L不锈钢钎焊抗剪断口均发生在SiC陶瓷与钎料连接界面处,由于活性元素Ti的作用,在陶瓷与钎料的界面处形成了连续的反应层,反应生成了Ti C和Ti5Si3;在316L不锈钢与钎料的界面处,生成了Fe-Ti化合物和Cu-Ti化合物。随着钎焊温度升高及保温时间延长,接头强度均呈现出一个峰值,在温度为900℃,保温20 min的工艺条件下可获得最大接头抗剪强度。     

SiC陶瓷与316L不锈钢真空活性钎焊

采用Ag-Cu-Ti活性钎料,通过真空钎焊方法进行了SiC陶瓷与316L不锈钢的连接,研究了接头的界面组织、特征点成分和物相,并探讨了钎焊温度(800～930℃)、保温时间(0～30 min)对接头界面组织和连接强度的影响。结果表明,SiC陶瓷与316L不锈钢钎焊抗剪断口均发生在SiC陶瓷与钎料连接界面处,由于活性元素Ti的作用,在陶瓷与钎料的界面处形成了连续的反应层,反应生成了Ti C和Ti5Si3;在316L不锈钢与钎料的界面处,生成了Fe-Ti化合物和Cu-Ti化合物。随着钎焊温度升高及保温时间延长,接头强度均呈现出一个峰值,在温度为900℃,保温20 min的工艺条件下可获得最大接头抗剪强度。     

Ti-61Ni真空钎焊TZM合金接头界面组织与力学性能

目的 研究不同钎焊温度下获得TZM/Ti-61Ni/TZM接头的微观组织演化及力学性能的变化,为获得可靠钎焊接头提供指导.方法 采用电弧熔炼方法制备Ti-61Ni,将以TZM/Ti-61Ni/TZM"三明治"结构装配的试样放入真空炉中进行不同温度(1200～1280℃)下的钎焊连接,利用SEM和EDS等手段分析钎料与母材之间的相互作用,测试接头的力学性能并分析接头断裂行为,研究温度对接头界面组织演化和力学性能的影响.结果 钎缝主要为TiNi相和TiNi3相,钎料中Ti元素向母材扩散形成Mo(s,s)扩散层;钎焊温度升高,钎缝宽度减小,TiNi相减少,钎料对TZM母材的溶蚀加剧;接头的抗剪强度先升高后下降,接头在TZM母材处断裂.结论 采用Ti-61Ni高温钎料实现了TZM合金的可靠连接,接头典型界面组织为TZM/扩散层(Mo(s,s))/TiNi+TiNi3/扩散层(Mo(s,s))/TZM;当钎焊温度为1240℃时,接头的抗剪强度达到最大值,为121 MPa.     

Zr-Cu-Ni非晶钎料真空钎焊TiAl合金/316L不锈钢接头的界面组织与剪切性能

采用自主设计制备的Zr-42.9Cu-21.4Ni非晶钎料对TiAl合金和316L不锈钢进行真空钎焊,研究钎焊温度和钎焊时间对TiAl合金/316L不锈钢异种金属接头微观组织和剪切性能的影响。结果表明：钎缝界面可以划分为6个不同的反应层。1040 ℃/10 min下制备的钎焊接头从TiAl合金到316L不锈钢侧界面组织依次为γ(TiAl)+AlCuTi/α₂(Ti₃Al)+AlCuTi/AlCu+ZrCuNi+FeZr/Cu₈Zr₃+ZrCuNi+TiFe+Fe₂Zr/FeZr+Fe₂Zr+TiFe₂+ZrCu/α-(Fe, Cr)。随着钎焊温度的升高,接头的抗剪强度先升高后降低。当钎焊温度为1040 ℃和钎焊时间25 min时,接头抗剪强度达到最大值162 MPa。断口分析表明,接头在FeZr+Fe₂Zr+TiFe₂+ZrCu界面处萌生,沿着Cu₈Zr₃+ZrCuNi+TiFe+Fe₂Zr和α-(Fe, Cr)扩展,呈解理断裂。     

Al-Si-Cu-Zn钎料钎焊3003铝合金的接头组织及力学性能

采用自制的Al-Si-Cu-Zn钎料对3003铝合金进行钎焊实验,利用X射线衍射、扫描电镜、能谱仪对接头微观组织和断口进行分析,并研究了钎焊温度对接头组织和性能的影响。结果表明:在540~580℃保温10min工艺下钎焊3003铝合金,均可获得良好的钎焊效果。钎焊接头均由钎缝中心区的α(Al)固溶体、θ(Al2Cu)金属间化合物、细小Si相和AlCuFeMn+Si相,两侧扩散区的α(Al)固溶体与元素扩散层以及母材组成;钎焊接头室温剪切断裂于扩散区齿状α(Al)/钎缝中心区的交界面,断口主要呈脆性解理断裂特征。随着钎焊温度的升高,扩散区的α(Al)固溶体晶粒长大,接头结合界面犬牙交错;当钎焊温度为560℃,保温10min时,接头的室温抗剪强度达到最大值92.3MPa,约为母材强度的62.7%。     

GH3044镍基合金钎焊接头的界面组织和强度分析

采用Ni基箔片钎料对GH3044镍基合金进行钎焊连接,利用电子扫描显微镜(SEM)及能谱分析仪,对接头的界面组织进行观察和分析;采用电子万能试验机对GH3044镍基合金的钎焊接头进行抗剪试验,评价接头的室温抗剪强度.试验结果表明:当钎焊温度为1070℃,保温时间为10min时,界面处有(Cr,W)2+Ni固溶体析出,钎缝中有(Cu,Ni)固溶体组织+Ni-Mn金属间化合物层及η″+ξ′金属间化合物层生成,此钎焊工艺参数下获得的钎焊接头具有最高的室温抗剪强度319MPa.     

连接SiCp/6063Al复合材料的Al-Si-Cu-Ce-Ti箔状钎料制备及其性能研究

采用快凝甩带技术制备了6组不同Ti含量的(Al-10Si-20Cu-0.05Ce)-xTi急冷箔状钎料,并对SiCp/6063Al复合材料进行真空钎焊,然后对钎料及接头的显微组织和性能进行分析。结果表明,急冷箔较常规铸态钎料的组织细小、均匀;固、液相线降低,熔化区间变窄;随着Ti含量的增加,急冷箔中片状Al-Si-Ti金属间化合物相增多,导致钎料脆性增加;6组钎料在复合材料上润湿性较差,但在6063Al合金上润湿性良好。在580℃钎焊温度、保温30min条件下,采用1%Ti含量急冷箔状钎料成功连接了SiCp/6063Al复合材料,钎焊接头组织致密、完整,急冷箔状钎料与6063Al合金基体连接界面可进行充分的冶金结合,且接头剪切强度达到104.9 MPa;钎焊前采用夹具增加接头压力可显著提高接头的连接质量。     

高体积比SiCp/A356复合材料真空扩散钎焊接头组织与性能研究

采用快速甩带技术制备了7组(Al-33.3Cu-6.0Mg)-xNi(x=0,0.5,1.0,2.0,3.0,4.0,5.0,质量分数/%)急冷箔状钎料,分别对化学镀Ni-P合金前后的SiCp/A356复合材料进行真空扩散钎焊。通过剪切实验对钎焊接头的抗剪强度进行测定,并利用扫描电镜和能谱分析等方法对接头微观组织进行观察和分析。结果表明,当向Al-33.3Cu-6.0Mg钎料合金中添加不同含量的Ni时,其急冷钎料的固-液相线(504~522℃)变化较小;当w(Ni)=3%且在570℃、保温30min的钎焊工艺下,A356基体/钎料两界面间发生适当的互扩散和溶解现象(585℃时出现溶蚀缺欠),且部分钎料/SiC颗粒的接触界面发生Mg参与的化学反应,接头抗剪强度达到64.97 MPa;而在同种钎焊工艺下,对于化学镀Ni-P合金镀层后的SiCp/A356复合材料,其接头处A356基体/Ni-P合金镀层/钎料等接触界面易于形成富含Al、Ni的致密反应层,接头连接质量显著提高,且w(Ni)=4%时,接头抗剪强度达到79.96 MPa。     

铝合金与镀锌钢脉冲旁路耦合电弧GMAW熔钎焊搭接工艺及接头性能的研究

采用脉冲旁路耦合电弧GMAW熔钎焊方法,以ER4043焊丝为填充材料,实现了铝合金与镀锌钢异种金属的熔钎焊接,得到外观成形良好、变形小的搭接接头。通过SEM、EPMA、EDS、显微硬度计和拉伸实验机对搭接接头的微观组织及力学性能进行了研究。结果表明:在搭接接头界面中心区的铝侧形成针状或锯齿状的FeAl3金属间化合物,而在钢侧形成平齐的Fe2Al5和Fe0.7Al3Si0.3金属间化合物。显微硬度测试分析进一步证明了铝合金与镀锌钢界面中心区由硬度高的金属间化合物组成。搭接接头的平均拉剪强度达到144.85MPa,最高拉剪强度达到186.73MPa,达到了铝合金母材强度的88.5%,且断裂方式为韧性断裂。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.