Nonlinear Screening and the Metal–Insulator Transition in a Two-Dimensional Electron Gas

Russian Physics Journal - The density functional theory is used to study the nonlinear screening properties of a two-dimensional electron gas in a strong magnetic field. The Kohn-Sham equations for...     

Gaseous Metal and the Problem of Vapor–Liquid (Insulator–Metal) Transition in Metal Vapors

Journal of Experimental and Theoretical Physics - We consider the main properties of a gaseous metal, viz., the state of metal vapor adjoining the vapor–fluid transition binodal. The gaseous...     

Metal–Insulator Phase Transition in Thin Films of a Nickel-Doped Vanadium Dioxide

Physics of the Solid State - The electrical conductivity of thin polycrystalline VNixO2 films has been studied in a wide range of temperatures, which covers the regions of both metallic and...     

Field-Induced Metal–Insulator Transition in β-EuP_3

Metal-insulator transition(MIT) is one of the most conspicuous phenomena in correlated electron systems.However such a transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with the charge gap.We present the observation of a magnetic-field-driven MIT in a magnetic semiconductor β-EuP_3.Concomitantly,we find a colossal magnetoresistance in an extreme way:the resistance drops billionfold at 2K in a magnetic field less than 3T.We ascribe this striking MIT as a field-driven transition from an antiferromagnetic and paramagnetic insulator to a spin-polarized topological semimetal,in which the spin configuration of Eu~(2+)cations and spin-orbital coupling play a crucial role.As a phosphorene-bearing compound whose electrical properties can be controlled by the application of field,β-EuP_3 may serve as a tantalizing material in the basic research and even future electronics.     

Detection of the Ferromagnetic Properties of Si:P in the Region of an Insulator–Metal Phase Transition

JETP Letters - The ferromagnetic properties of Si:P in the region of a concentration insulator–metal phase transition at liquid helium temperatures have been detected and studied. To...     

Influence of Doping on the Mott Metal—Insulator Transition in Infinite Dimensions

We have studied the effect of hole-doping on the established scenerio of the first-order Mott metal-insulator transition (MIT) at half-filling using dynamical mean-field theory and exact diagonalization technique.The mott insulator state is changed into metallic state immediately as holes are doped into the system.The latter is expected to be Fermi liquid.The previously found unanalytical structure of MIT no longer exists for doping as small as 2 percent.We compare our results with that obtained from Gutzwiller approximation.     

Metal–Insulator Phase Transition in Iron-Doped Vanadium Dioxide Thin Films

Physics of the Solid State - The electrical conductivity of polycrystalline V(1 – x)FexO2 films has been investigated in a wide temperature range, which covers both the...     

Metal–Insulator Phase Transition in Tungsten-Doped Vanadium Dioxide Thin Films

Physics of the Solid State - The electrical conductivity of thin polycrystalline V(1 – x)WxO2 has been studied in a wide temperature range, which covers the regions of both...     

Features of the Crystal Structure of Tm1–xYbxB12 Dodecaborides near a Quantum Critical Point and at a Metal–Insulator Transition

JETP Letters - The magnetic phase diagram of Tm1–xYbxB12 antiferromagnets is determined from the specific heat measurements performed at low and ultralow temperatures (0.07–10 K)....     

Mechanisms of the Insulator—Metal Transition and Spin Crossover in CoO at High Pressure

JETP Letters - The effect of high pressure on the electronic characteristics of CoO is analyzed in the framework of the multielectron model of transition metal oxides. The specific features of spin...     

Superconductor–Insulator Transition in NbTiN Films

Experimental results indicating a direct disorder-induced superconductor–insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition T_c according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii–Kosterlitz–Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.     

Infrared Nano-Imaging of Electronic Phase across the Metal–Insulator Transition of NdNiO3 Films

NdNiO₃ is a typical correlated material with temperature-driven metal–insulator transition. Resolving the local electronic phase is crucial in understanding the driving mechanism behind the phase transition. Here we present a nano-infrared study of the metal–insulator transition in NdNiO₃ films by a cryogenic scanning near-field optical microscope. The NdNiO₃ films undergo a continuous transition without phase coexistence. The nano-infrared signal shows significa...     

Anomalous Hall Effect in GaAs–AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal–Insulator Transition

Journal of Experimental and Theoretical Physics - We report on the results of experiments indicating the existence of the anomalous Hall effect associated with the ferromagnetic ordering of spins...     

Rigorous Treatment of the Liquid-Vapor Transition in a Polydisperse System with Kac Interaction

Within the canonical formalism, we consider a polydisperse lattice-gas model and a polydisperse continuous system interacting with the Kac potential. We obtain rigorous expressions for free energy densities. We also exhibit phase diagrams of the bidisperse lattice-gas model.     

Microdischarges Near Metal–Insulator Interfaces

Some statistical features of microdischarges running near the metal-insulator interfaces have been discussed. The study has verified an exponential character of statistical distributions of the time intervals between microdischarge pulses, power-law distribution of voltage peaks of these pulses (height of pulses) and very weak correlation effects among pulses, i.e. weak time-height correlation, time autocorrelation and height autocorrelation. A statistical parameter of the power law distribution of the heights of microdischarge pulses proved to be sensitive to the voltage load of the insulating interface metal-insulator.     

Reliability Characteristics of Diamond-Like Carbon as Gate Insulator for Metal–Insulator–Semiconductor Application

Physics of the Solid State - This study presents the reliability of diamond-like carbon (DLC) ultrathin films fabricated by DC magnetron sputtering as the gate dielectric layer in...     

Study of Transport Phenomenon in Amorphous RexSi1 – x Thin Films on the Both Sides of the Metal–Insulator Transition at Very Low Temperatures

Physics of the Solid State - In this work, we study the electrical conductivity behaviors on the both sides of the metal-insulator transition (MIT) in RexSi1 – x amorphous...     

Explicit Analysis of Creating Maximally Entangled State in the Mott Insulator State

We clarify the essence of the method proposed by You (Phys. Rev. Lett. 90 (2004) 030402) to create the maximally entangled atomic N-GHZ state in the Mott insulator state. Based on the time-independent perturbation theory,we find that the validity of the method can be summarized as that the Hamiltonian governing the evolution is approximately equivalent to the type αJx^2 bJx, which is the well known form used to create the maximally entangled state.     

Holographic Insulator/Superconductor Phase Transition in Born–Infeld Electrodynamics

We study holographic insulator/superconductor phase transition in the framework of Born–Infeld electrodynamics both numerically and analytically. First we numerically study the efects of the Born–Infeld electrodynamics on the phase transition, find that when the Born–Infeld parameter increases, the critical chemical potential keeps invariant but the gap frequency becomes larger. Then we employ the variational method for the Sturm–Liouville eigenvalue problem to study the phase transition analytically. The analytical results obtained are found to be consistent with the numerical results.