剪切作用下Cu(100)扭转晶界塑性行为研究

本文采用分子动力学方法研究了在剪切载荷作用下,Cu(100)扭转晶界对Cu柱屈服强度的影响.模拟结果发现,在加载过程中,低角度扭转晶界形成的位错网发生位错形核与扩展,位错之间的塞积作用提高了Cu柱的屈服强度;对于高角度扭转晶界,晶界发生滑动降低了Cu柱的屈服强度.同时发现,随着扭转角度的增加,Cu柱的屈服强度先增大,当扭转角度大于临界角度时,Cu柱的屈服应力逐渐减小.这表明剪切载荷作用下,两种不同的机理主导Cu柱的屈服,对于小于临界角度的扭转晶界,Cu柱的屈服由晶界位错形核和扩展机理主导,对于大于临界角度 关键词： 扭转晶界 分子动力学 位错形核 晶界滑移     

孔洞对FeCrNiCoCu高熵合金拉伸性能影响的分子动力学研究

孔洞是FeCrNiCoCu高熵合金在制备过程中常见的缺陷,为此本文利用分子动力学模拟方法构建含孔洞的FeCrNiCoCu模型进行单轴拉伸模拟,探究了孔洞位置、孔洞半径和变形温度对其力学性能的影响.研究发现,在Z轴晶向为[111]的晶体中和晶界处的孔洞会显著降低模型的屈服应变和屈服强度,但对模型的杨氏模量影响不大.随着晶界处孔洞半径的增大,在弹性阶段,孔洞半径增大使应力集中面积增大,有利于位错形核,模型的力学性能随之降低.在塑性变形阶段,随着孔洞半径的增大,初始位错更倾向于向Z轴晶向为[001]的晶体中扩展.在中、低温条件下(T<800K),模型保持良好的力学性能;在高温条件下,力学性能显著降低.在高温塑性变形阶段,模型中的总位错线长度较低,平均流变应力也较低.     

纳米Ni在77 K温度下压缩行为的研究

利用低温力学测试系统研究了电化学沉积纳米Ni在77 K温度下的压缩行为. 室温下纳米Ni 的屈服强度为 2.0 GPa, 77 K温度下的屈服强度为3.0 GPa, 压缩变形量则由室温的10%左右下降到5%. 借助应变速率敏感指数、激活体积、扫描电子显微和高分辨透射电子显微分析, 对纳米Ni的塑性变形机制进行了表征. 研究表明, 在77 K温度下的塑性变形主要是由晶界-位错协调变形主导, 晶界本征位错弓出后无阻碍地在晶粒内无位错区运动, 直至在相对晶界发生类似切割林位错行为. 同时分析了弓出位错的残留位错部分在协调塑性变形时起到的增加应变相容性和减小应力集中的作用. 利用晶界-位错协调机制和残留位错运动与温度及缺陷的相关性揭示了纳米Ni室温和77 K温度压缩性能差异的内在原因. 关键词： 塑性变形 强度 位错     

纳米单晶与多晶铜薄膜力学行为的数值模拟研究

通过对不同温度下单晶薄膜的拉伸性能的分子动力学模拟，从微观角度揭示了温度效应对材料性能的影响. 结果表明温度效应对材料的变形机理影响很大.0K温度下由于缺乏热激活软化的影响, 粒子运动所受到的阻碍较大, 薄膜的强度较高, 塑性变形主要来自于粒子的短程滑移.温度升高，粒子的热运动加剧，屈服强度降低, 塑性变形将主要来自于大范围的位错长程扩展.多晶薄膜的模拟结果表明, 虽然其晶粒形状较为特殊, 但是它仍然遵循反Hall-Petch关系.在模拟过程中，侧向应力最大值比拉伸方向应力的最大值滞后出现.位错只会从晶界产生并向晶粒内部传播，晶粒间界滑移是多晶薄膜塑性变形的主要来源. 关键词： 纳米薄膜 变形机理 温度效应 分子动力学     

纳米多晶铜中冲击波阵面的分子动力学研究

冲击波阵面反映材料在冲击压缩下的弹塑性变形行为以及屈服强度、应变率条件等宏观量, 还与冲击压缩后的强度变化联系. 本文使用分子动力学方法, 模拟研究了冲击压缩下纳米多晶铜中的动态塑性变形过程, 考察了冲击波阵面和弹塑性机理对晶界存在的依赖, 并与纳米多晶铝的冲击压缩进行了比较. 研究发现: 相比晶界对纳米多晶铝的贡献而言, 纳米多晶铜中晶界对冲击波阵面宽度的影响较小; 并且其塑性变形机理主要以不全位错的发射和传播为主, 很少观察到全位错和形变孪晶的出现. 模拟还发现纳米多晶铜的冲击波阵面宽度随着冲击应力的增加而减小, 并得到了冲击波阵面宽度与冲击应力之间的定量反比关系, 该定量关系与他人纳米多晶铜模拟结果相近, 而与粗晶铜的冲击压缩实验结果相差较大.     

Au/Cu(001)异质外延岛演化的分子动力学研究

利用分子动力学弛豫方法模拟了Au/Cu(001)异质外延生长初期Au异质外延岛的形貌演化，分析了Au外延岛演化过程中的局域应力及与基体结合能随表面岛尺寸的变化. 研究结果表明：当异质外延岛小于7×7时，外延岛原子分布呈现赝Cu点阵形貌；当外延岛达到8×8后，外延岛内开始出现失配位错，失配位错数量随外延岛尺寸的增加而增加. 局域压力分析指出，外延岛上原子之间的近邻环境不同导致了所受应力的差异，而外延岛的形变则是由外延岛原子的应力分布所决定. 研究还发现，失配位错的产生导致错位原子与基体原子之间的结合强度减弱，但相对增加了非错位原子与基体原子之间的结合强度. 关键词： 异质外延 表面形貌 局域压力 分子动力学模拟     

单晶铜纳米线屈服机理的原子模拟研究

采用分子静力学方法模拟了〈100〉单晶铜纳米线的拉伸变形过程,研究了纳米线屈服的机理. 结果表明：1） 纳米线初始屈服通过部分位错随机激活的{111}〈112〉孪生实现,后继屈服通过{111}〈112〉部分位错滑移实现;2） 纳米线变形初期不同滑移面上的部分位错在两面交线处相遇形成压杆位错,变形后期部分位错在刚性边界处塞积,两者都阻碍位错滑移,引起一定的强化作用. 关键词： 纳米线 屈服 位错 分子静力学     

外延生长薄膜中失配位错形成条件的分子动力学模拟研究

运用分子动力学方法对负失配条件下的外延铝簿膜中失配位错的形成进行了模拟研究.所采 用的原子间相互作用势为嵌入原子法(EAM)多体势.模拟结果显示：在500K下长时间静态弛豫 ，表面和内部结构完整的外延膜在9—80原子层厚度范围内(约为其热力学临界厚度的3—40 倍)均不形成失配位错，而在薄膜表面预置一个单原子层厚、三个原子直径大小的凸台或凹 坑时，失配位错则能够在15个原子层厚的外延膜上迅速形成：在动态沉积生长条件下，表面 自然形成凹凸，初始厚度为9个原子层厚的外延膜在沉积生长中迅速形成失配位错.在三种条 件下，所形成的位错均为伯格斯矢量与失配方向平行的全刃位错.分析发现：在压应力作用 下，表面微凸台诱发了其侧薄膜内部原子的挤出，造成位错形核；而表面微凹坑则直接因压 应力作用形成了一个表面半位错环核. 关键词： 外延薄膜 失配位错 分子动力学 铝     

体心立方金属钽Ⅱ型裂纹尖端缺陷萌生的多尺度分析

本文采用多尺度准连续介质法(quasi-continuum method, QC)模拟体心立方(body-centered-cubic, bcc)金属钽(Ta)Ⅱ型裂纹尖端位错的形核与发射过程,获得位错发射位置与应力强度因子关系曲线,分析裂纹尖端缺陷萌生过程,研究全位错分解以及扩展位错形成机理. 位错活动在不同阶段表现出不一致的特征,新位错的发射对于位错运动具有促进作用. 研究表明,裂纹扩展初始阶段首先萌生点缺陷,点缺陷随着加载强度增加会萌生新的点缺陷,点缺陷最终运动到边界,导致Ⅱ型断裂破坏. 在全位错发射之前有不全位错的形核与发射表明全位错的分解分步进行,从势能曲线上来看,也就是两个极小值点的形成机理不同. 关键词： 多尺度 准连续介质法 Ⅱ型裂纹 扩展位错     

温度对大角度晶界变形过程影响的晶体相场法研究

应用晶体相场法研究大角度晶界在外加应力作用下温度对位错运动的影响。研究表明,大角度晶界在应力作用下会发生形状变化;当变形达到临界应变时,晶界褶皱处产生位错并发射进入晶粒内部;温度较低时,晶界处位错形核所需的临界应变更大。在应力作用下大角度晶界通过改变曲率和位错运动产生迁移,温度较高时有利于晶界迁移。     

Dislocation emission from interphase boundaries in deformed nanocomposites

A theoretical model for emission of lattice dislocations from small-angle interphase boundaries characterized by both orientational and dilatational misfit in deformed nanocomposites is proposed. With allowance for the free surface of the material, the forces acting upon the dislocation structures of the interphase boundaries are calculated, through which the dependences of the critical shear stress for dislocation emission on different parameters of the boundary are found. It is shown that the influence of dilatational misfit and proximity of the interphase boundary to the free surface on dislocation emission is insignificant. It is established that the ability of interphase boundaries to emit dislocations is not uniform: emission of certain dislocations is facilitated as compared to ordinary small-angle grain boundaries, while emission of other dislocations may be inhibited.     

Zigzag lines in a (001)Si low-angle twist boundary

A low angle twist boundary formed by bonding an ultrathin (001) silicon film onto a (001) silicon wafer is investigated using two-beam transmission electron microscopy to identify positively zigzag lines which separate large interfacial regions formed by square networks of 1/2? 110 ? screw misfit dislocations. An approach to the elastic field of a zigzag line is proposed from the repetitive use of angular dislocations added to a ribbon-like uniform distribution of infinitesimal dislocations parallel to a family of pure screw misfit dislocations. Theoretical and experimental images of successive triple nodes are compared to derive the unique set of Burgers vectors attached to a zigzag line. In principle, this approach can be applied to any elongated hexagonal mesh of a dislocation network.     

Quantifying the grain boundary resistance against slip transfer by experimental combination of geometric and stress approach using stage-I-fatigue cracks

In recent studies, many groups have investigated the interaction of dislocations and grain boundaries by bi-crystals and micro-specimen experiments. Partially, these experiments were combined with supplementary simulations by discrete dislocation dynamics, but quantitative data for the grain boundary resistance against slip transfer is still missing. In this feasibility study with first results, we use stage-I-fatigue cracks as highly localised sources for dislocations with well-known Burgers vectors to study the interaction between dislocations in the plastic zone in front of the crack tip and selected grain boundaries. The stress concentration at the grain boundary is calculated with the dislocation-free zone model of fracture using the dislocation density distribution in the plastic zone from slip trace height profile measurements by atomic force microscopy. The grain boundary resistance values calculated from common geometric models are compared to the local stress distribution at the grain boundaries. Hence, it is possible to quantify the grain boundary resistance and to combine geometric and stress approach for grain boundary resistance against slip transfer to a self-contained concept. As a result, the prediction of the grain boundary resistance effect based on a critical stress concept is possible with knowledge of the geometric parameters of the grain boundary only, namely the orientations of both participating grains and the orientation of the grain boundary plane.     

晶体相场法模拟异质外延过程中界面形态演化与晶向倾侧

采用晶体相场模型研究了异质外延过程中失配应变与应力弛豫对外延层界面形态演化的影响, 并对由衬底倾角引起的外延层晶向倾侧进行了分析.研究结果表明: 在有一定倾角的衬底晶体上进行外延生长时,若衬底和外延层之间失配度较大 (ε>0.08),外延层中弹性畸变能会以失配位错的形式释放, 最终薄膜以稳定的流动台阶形式生长且外延层的晶向倾角与衬底倾角呈近似线性关系. 而当衬底和外延层之间失配度较小(ε<0.04)不足以形成失配位错时, 外延层中弹性畸变能会以表面能的形式释放,最终使薄膜以岛状形态生长. 在高过冷度条件下,衬底倾角和失配度较大时,衬底和外延层之间会形成由大量位错规则排列而成的小角度晶界从而显著改变外延层的生长位向.     

不同对称性下晶界结构演化及微观机理的晶体相场法研究

采用晶体相场法研究了单轴拉伸下三角相双晶变形过程及机理, 并重点分析了小角对称与非对称晶界和大角对称与非对称晶界在变形过程中的演化及微观机理, 变形过程中应力方向与初始晶界方向平行. 结果表明, 小角对称晶界由柏氏矢量夹角呈60°的两种刃型位错组成, 变形过程中不同类型的位错运动方向相反, 并各自与另一晶界上同一类型位错相互吸引以致部分位错发生湮没; 小角非对称晶界上的位错类型单一, 在应力作用下先沿水平方向攀移, 后各自分解成柏氏矢量约呈120°的两位错, 并通过位错运动和湮没最终形成理想单晶; 大角晶界在应力的作用下先保持水平状态而后锯齿化并发射位错, 伴随着位错运动和湮没, 最终大角非对称晶界发生分解, 而大角对称晶界则重新平直化, 表明大角对称晶界比大角非对称晶界更稳定, 这与实验和分子动力学模拟结果一致. 关键词： 晶体相场 双晶 晶界 对称性     

Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness

It has been shown that, in the GeSi/Si(001) heterosystem at lattice parameter mismatches of ～2% and more, a small critical thickness of the introduction of dislocations leads to the implementation of the mechanism of induced nucleation of misfit dislocations. This mechanism consists in that the stress field of an already existing 60° dislocation provokes introduction of a secondary 60° dislocation with an opposite-sign screw component. As a result of the interaction of such dislocation pairs, edge misfit dislocations are formed, which do control the plastic relaxation process. This mechanism is most efficient when dislocations are introduced at the GeSi film thickness only slightly exceeding the critical thickness of the introduction of 60° dislocations, and there are threading dislocations. The dominant type of misfit dislocations (60° or edge) in the Ge-on-Si(001) system can be controlled by varying the mismatch parameter in the heteropair.     

Generation of glide split-dislocation half-loops by grain boundaries in nanocrystalline Al

A three-dimensional model for the generation of split dislocations by grain boundaries in nanocrystalline A1 is proposed. In terms of this model, rectangular glide split-dislocation half-loops nucleate at glide lattice dislocation loops pressed to grain boundaries by an applied stress. The level of the applied stress and the grain size at which the emission of such dislocation half-loops becomes energetically favorable are determined. The dependences of the stacking-fault width on the grain size and the applied stress are found. The anomalously wide stacking faults experimentally detected in nanocrystalline A1 are shown to be caused by high internal stresses forming in the stages of preparation, treatment, or local loading of nanocrystalline samples.     

Prediction of dislocation formation in epitaxial multilayers subject to in-plane loading

A theoretical model is described to predict equilibrium distributions of misfit dislocations in one or more anisotropic epitaxial layers of a multilayered system deposited on a thick substrate. Each layer is regarded as having differing elastic and lattice constants, and the system is subject to biaxial in-plane mechanical loading. A stress transfer methodology is developed enabling both the stress and displacement distributions in the system to be estimated for cases where the interacting dislocations are of a pure edge configuration. Energy methods are used to determine equilibrium distributions of the dislocations for given external applied stress states. It is shown that the new model accurately reproduces known exact analytical solutions for the special case of just one isotropic epitaxial layer applied to an isotropic semi-infinite substrate having the elastic constants of the substrate but differing lattice constants. The model is used to consider equilibrium dislocation distributions in capped epitaxial systems with misfit dislocations. It is shown that the simplifying assumptions often made in the literature, regarding the uniformity of elastic properties and the neglect of anisotropy, can lead to critical thicknesses being underestimated by 15–18%. The application of uniaxial tensile stresses increases the value of critical thicknesses. The model can be used to analyse dislocations in various non-neighbouring layers provided the dislocation density has the same value in all layers in which dislocations have formed. This type of analysis enables the prediction of the deformation of metallic multilayers subject to mechanical and thermal loading.     

Role of the dislocation screw component in the formation of the dislocation structure in Ge- and Si-based semiconductor heterosystems

The possibility of solving the problem of propagating dislocations in heterosystems by means of decreasing the number of dislocation families participating in the process of misfit stress relief has been investigated. The system of Γ-shaped misfit dislocations, which is proposed in the literature as the optimal type of plastic relaxation, has been analyzed. Taking into account the effect of the screw dislocation component, this suggestion is valid only for the initial stage of relaxation. The results of simulation of the process of plastic relaxation and experimental investigations of structures containing L-shaped dislocations are presented. Misfit stress relief in heterostructures grown on vicinal substrates has been theoretically and experimentally investigated.