太赫兹折叠波导慢波结构的设计与微加工

从行波管工作的物理特性提出了一种获得折叠波导慢波结构参数的简单方法,给定工作频率和电压,能够获得折叠波导慢波结构的初始参数.设计了D波段的折叠波导结构来验证该方法,对其冷测特性如色散、耦合阻抗进行了分析.仿真结果表明,设计的折叠波导慢波结构在中心频率处具有较平缓的色散关系,在中心频率处耦合阻抗为3.5欧姆.在电子注电压为20.6 kV,电流为15 mA时,27 mm(50个周期)的折叠波导慢波结构在220 GHz具有13.5 dB的增益,3 dB带宽为11 GHz(213~224 GHz).同时讨论了折叠波导慢波结构的微加工工艺,并通过UV-LIGA工艺获得了实验样品.     

220 GHz折叠波导行波管慢波结构的损耗研究

在太赫兹频段,折叠波导慢波结构的损耗很大,因此需要在设计220 GHz折叠波导行波管慢波结构时进行深入研究。首先通过软件仿真的方法预测了慢波结构的S参数,然后利用紫外光刻、电镀和微铸模成型(UV-LIGA)工艺制作了慢波结构样品并进行测量。测量结果表明,该样品在220 GHz时衰减系数约为240 dB/m,与仿真结果符合较好。显微照片显示,该样品产生了形变,造成高频段2种结果存在差异。     

0.85THz可调谐式折叠波导再生反馈真空电子学振荡器的理论及实验研究

本文提出了一种适用于850 GHz太赫兹波成像系统的可调谐再生反馈振荡器。使用UV-LIGA微加工工艺制作慢波结构,可满足折叠波导在太赫兹频段的尺寸需求。使用CST微波工作室对折叠波导色散特性进行设计,同时针对于行波管和再生反馈振荡器中折叠波导的结构,阐明了影响频率调谐的因素。此外,对带衰减的反馈回路进行仿真模拟,并使用三维粒子模拟验证了整体设计。改变电子注电压可实现振荡频率可调,振荡从单频状态逐渐变为多频状态,整体输出功率均大于200 mW。     

0.85 THz可调谐式折叠波导再生反馈真空电子学振荡器的理论及实验研究（英文）

提出了一种适用于850 GHz太赫兹波成像系统的可调谐再生反馈振荡器。使用UV-LIGA微加工工艺制作慢波结构,可满足折叠波导在太赫兹频段的尺寸需求。使用CST微波工作室对折叠波导色散特性进行设计,同时针对于行波管和再生反馈振荡器中折叠波导的结构,阐明了影响频率调谐的因素。此外,对带衰减的反馈回路进行仿真模拟,并使用三维粒子模拟验证了整体设计。改变电子注电压可实现振荡频率可调,振荡从单频状态逐渐变为多频状态,整体输出功率均大于200 mW。     

近太赫兹频段线性注真空器件的研究

介绍了太赫兹频段真空电子器件的研究和开发进展,包括慢波结构理论、设计、模拟及优化,微加工和微组装技术,整管技术等。这些器件包括行波管、返波管、斜注管、止带振荡器及行波管谐波放大器等,高频结构以折叠波导慢波结构为主,在太赫兹返波管中则利用叶片加载波导慢波结构。器件技术包括微机电系统(MEMS)技术,微波等离子体化学气相沉积(MPCVD)金刚石生长、金属化和封接技术等。最后给出W波段、G波段以及340 GHz部件和器件所达到的性能。     

DRIE技术加工W波段行波管折叠波导慢波结构的研究

简要介绍了利用深反应离子刻蚀制作折叠波导慢波结构的现状及制作的工艺流程。对深反应离子刻蚀掩膜制作即光刻工艺,以及折叠波导慢波结构的深刻加工进行了深入的研究。详细分析了各光刻工艺对光刻胶图形的影响,尤其是前烘对光刻胶图像侧壁垂直度的影响;在深反应离子刻蚀中,还详细分析了刻蚀时间、下电极功率以及刻蚀气体气压对刻蚀结果的影响。经参数优化后获得最佳工艺参数,并制作出带有电子注通道的W波段折叠波导慢波结构,慢波结构深为946μm,侧壁垂直度为91°,电子注通道深为225μm,侧壁垂直度为90°。     

345 GHz微折叠波导慢波结构参数分析

借助微机电加工技术(MEMS技术)研制的微折叠波导行波管(FWG-TWT)太赫兹辐射源,具有紧凑、小型、宽带以及高功率的特点。本文对345 GHz微电真空折叠波导慢波结构进行了结构参数的规律分析和初步优化设计。基于小信号理论设计的慢波结构的初步结构参数,采用三维PIC软件仿真并优化,研究了电子参数、几何结构参数、磁场参数与增益之间的关系,对折叠波导慢波结构的设计具有一定的参考意义。     

340 GHz太赫兹返波振荡器

介绍太赫兹返波振荡器的发展,重点对340 GHz返波振荡器的设计、模拟和微细加工等研究工作进行了详细介绍。采用平行流电子枪、均匀永磁聚焦系统和折叠波导慢波结构来实现340 GHz返波振荡器,计算和模拟结果表明,当调谐电压14 kV~16.2 kV,工作电流8 mA时,在337 GHz~347 GHz的频率范围内可得到10 mW输出功率。高频结构加工采用UV LIGA技术,已经加工出高频结构样品,并对真空环境应用做了研究,以保证较小的表面粗糙度,减小高频率情况下的射频损耗。     

0.85 THz 折叠波导行波管的高频特性与结构参数优化分析

由于折叠波导具有准二维结构、功率容量大、易集成等特点,非常适合在THz 频段推广应用,文中对0.85 THz 折叠波导行波管(FW-TWT)的色散和耦合阻抗特性进行了模拟计算与优化,利用等效电路理论、简化理论与CST 仿真计算的方法。根据折叠波导直波导高度需大于注通道的特点,电子注的直流加速电压必须小于某一值;根据MEMS 加工工艺的允许误差范围,对折叠波导结构各部分的参数进行优化,使该结构的色散较平坦与耦合阻抗较大。计算结果表明:电子注的直流加速电压不超过26 kV;注通道填充比为0.1 时,带宽约400 GHz、相速变化率小于1%时带宽约275 GHz(825~1 100 GHz)。该套方法对THz 折叠波导行波管的设计具有重要意义。     

0.22 THz宽带折叠波导慢波结构的设计

通过对折叠波导的理论分析,提出一种快速设计折叠波导慢波结构的方法。优化设计了中心频率为0.22 THz的折叠波导慢波结构,分析了结构参数对高频特性的影响。为防止振荡,仿真中采用截断的慢波结构。互作用仿真表明,在电子注电压为16 kV,电流为10 mA情况下,中心频率处增益为23.9 dB,输出功率为1.2 W。其中3 dB带宽大于14 GHz(0.214 THz~0.228 THz),带内输出功率大于0.5 W,在7 GHz(0.217 THz~0.224 THz)范围内输出功率大于1 W。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.