So1-gel制备PLCT薄膜的结晶特性与电畴结构研究

运用Sol-gel技术制备了(Pb，La，Ca)TiQ(简写为PLCT)铁电薄膜；利用XRD、SEM、AFM和EDAX分析了PLCT、薄膜的结构、表面形貌和组分。XRD衍射结果表明，PLCT、薄膜呈钙钛矿结构。随着退火时间的增加，PLCT、薄膜的XRD衍射峰的强度也随之增加。SEM、AFM分析表明，PLCT、铁电薄膜表面平整、致密、无裂缝。EDAX分析表明，PLCT、薄膜的实际组分十分接近设计组分。利用PFM分析了PLCT、薄膜的电畴结构，发现随着退火时间的增加，PLCT、薄膜的电畴由细小圆点状逐渐增大并形成片状电畴。     

退火时间对BNT-BT6薄膜微结构及压电性能的影响

采用溶胶-凝胶法(Sol-Gel)在Pt/Ti/SiO2/Si(100)衬底上制备了0.94(Na0.5Bi0.5)TiO3-0.06BaTiO3(BNT-BT6)薄膜,研究了不同退火时间对其微结构和压电性能的影响。X射线衍射(XRD)结果表明,制备的BNTBT6薄膜为钙钛矿型铁电薄膜,随着退火时间的延长,晶粒尺寸略有增加。原子力显微镜(AFM)结果表明,制备的薄膜表面比较平整、无裂缝。随着退火时间的延长,薄膜的粗糙度有所增加。在退火时长为60min时薄膜表面具有最佳的均一性,在退火时间为90min时薄膜均一性最差;优化退火时间,可提高薄膜结晶程度,避免焦绿石相的生成,进而提高BNT-BT6薄膜压电性能。压电力显微镜(PFM)结果表明,BNT-BT6薄膜的电畴为多畴结构。在不同退火时间下均有明显的压电响应,特别是在退火时间为60min时,BNT-BT6原始电畴有着最高的振幅强度。在30min、40min、60min和90min退火时间时,其平均压电系数d33分别为48pm/V、157pm/V、186pm/V和142pm/V。     

溅射工艺对BST薄膜取向行为的影响

采用射频磁控溅射法在Si(100)衬底上沉积了Ba0.65Sr0.35TiO3薄膜.借助XRD、AFM和SEM研究了衬底温度、退火温度、溅射气压等不同的溅射参数对Ba0.65Sr0.35TiO3薄膜的晶化行为和显微结构的影响.在室温下沉积并未经退火处理的Ba0.65Sr0.35TiO3 薄膜是无定形态,在较高温度下沉积的薄膜晶化相对较好;随着在氧气气氛中退火温度的升高,X射线衍射峰的半峰宽变窄,衍射峰强度增强;在0.37～1.2Pa气压下沉积的Ba0.65Sr0.35TiO3薄膜有(110)和(200)主衍射峰,且其强度随溅射气压的增加而增强;当溅射气压继续升到3.9Pa,(110)和(200)衍射峰明显增强,说明Ba0.65Sr0.35TiO3 薄膜具有(110) (200)择优取向.AFM和SEM结果显示薄膜晶粒细小均匀、结构致密、表面平整,且无裂纹、无孔洞.分析结果显示优化工艺参数制备的Ba0.65Sr0.35TiO3 薄膜是用以制备非致冷红外探测器的优质材料.     

热循环退火对InAs/Si(211)薄膜结构和电学性能的影响

InAs作为III-V族化合物半导体材料,可以应用于磁阻和霍尔元器件、量子点激光器元件、太阳能电池和红外探测器元件等方面,具有广泛的研究和应用前景.本文以Si(211)为衬底,采用热壁外延(hot wall epitaxy,HWE)技术制备了InAs薄膜,研究热循环退火(thermal cycle annealing,TCA)次数对InAs/Si(211)薄膜结构及电学性能的影响.热壁外延制备InAs薄膜的衬底温度为400℃,生长时间为4 h,不同的热循环退火次数为2、4、6、8、10.X射线衍射(XRD)测试表明:利用HWE技术在Si(211)衬底表面成功制备了闪锌矿结构的InAs薄膜,且沿(111)取向择优生长;TCA能够明显增强Si(211)衬底表面生长的InAs薄膜的择优取向.扫描电子显微镜(SEM)及原子力显微镜(AFM)测试分析表明:随着TCA次数增加到6次,InAs/Si(211)薄膜表面由于晶粒细化作用变得均匀平整,表面粗糙度从69.63 nm降低到56.43 nm,此时霍尔迁移率达到2.67×10~3cm~2/(V·s);过多的退火次数(≥8次)又会使薄膜表面的晶粒过大、缺陷增多,导致薄膜性能下降.     

组分梯度（Ba,Sr）TiO3薄膜的制备工艺研究

采用改进的溶胶．凝胶（sol-gel）法在si衬底上制备了组分梯度Ba1-xSrxTiO3（x=0，0．1，0．2，0．3，0．4）（简称BST）薄膜。探讨了不同退火温度对组分梯度BST薄膜晶化的影响，应用X射线衍射（XRD）及原子力显微镜（AFM）分析了薄膜的微观结构。结果表明组分梯度薄膜的最佳制备工艺为600℃预烧5min，700℃退火1．5h，此时薄膜具有完整的钙钛矿相，薄膜表面平整、无裂纹、无孔洞。比较了单组分和组分梯度BST薄膜的微观结构。XRD测试结果显示，组分梯度BST薄膜的衍射峰峰位介于底层和硕层单组分BST薄膜之间，且衍射峰明显宽化；AFM测试结果表明，组分梯度BST薄膜的晶粒明显大于单组分BST薄膜，表面均方根粗糙度（RMS）也大于单组分BST薄膜，这可能是由于组分梯度薄膜较高的预烧温度促进晶粒生长造成的。     

锗/石墨/硅薄膜结构的制备及其性质分析

利用磁控溅射技术在单晶硅衬底上制备出具有Ge/石墨/Si结构的薄膜样品,然后把其放入快速热退火(RTA)炉中退火。扫描电子显微镜(SEM)测试表明,石墨过渡层的引入缓解了Si、Ge之间的晶格失配和热失配。X射线衍射(XRD)分析表明450℃是Ge薄膜晶化的临界衬底温度,750℃是使Ge薄膜RTA晶化程度明显提高的临界退火温度,30s是最佳退火时间。     

后退火对射频磁控溅射制备β-Ga_2O_3薄膜的影响

采用射频磁控溅射法制备了氧化镓(Ga_2O_3)薄膜,计算了薄膜的O/Ga摩尔比,比值为1.57。研究了后退火对薄膜结构,形貌特征和光学带隙的影响。X射线衍射(XRD)结果表明,退火前的Ga_2O_3薄膜是一种无定形结构。在600℃氧气氛中退火2h后,薄膜开始出现β-Ga_2O_3的(■01)衍射峰;随着退火温度的升高,β-Ga_2O_3(■01)衍射峰进一步增强,并且半高宽从0.61°减小到0.49°。原子力显微镜(AFM)测试结果表明,退火前后薄膜表面的均方根粗糙度从3.47 nm增加到了7.08 nm,晶粒尺寸从19 nm增加到了53 nm。紫外-可见分光光度计(UV-VIS)测试结果表明Ga_2O_3薄膜在250 nm-1500 nm波长范围内的平均透过率在85%以上。利用Tauc公式计算了Ga_2O_3薄膜的光学带隙,带隙宽度在(4.85-5.06)eV之间,且随退火温度增加而减小。分析了表面形貌、光学带隙与薄膜结构之间的关系。     

真空退火对VOx薄膜相结构及表面形貌的影响

以V2O5粉末为原料,采用无机溶胶-凝胶法制备了V2O5凝胶膜,经过真空退火处理得到了以VO2为主的薄膜。利用X射线衍射(XRD)和原子力显微镜(AFM)对不同实验条件下得到的薄膜的物相和表面形貌进行分析,得出了VOx薄膜相结构及表面形貌与真空退火条件之间的关系。     

退火对ZnO/Cu/ZnO透明导电薄膜性能的影响

室温下利用磁控溅射制备了ZnO/Cu/ZnO透明导电薄膜,采用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、霍尔效应测量仪和紫外-可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系。结果表明:退火前后薄膜均具有ZnO(002)择优取向,随着退火温度的升高,薄膜的晶化程度、晶粒粒径及粗糙度增加,薄膜电阻率先降低后升高,光学透过率和禁带宽度先升高后降低。150℃下真空退火的ZnO/Cu/ZnO薄膜的性能最佳,最高可见光透光率为90.5%,电阻率为1.28×10-4Ω·cm,载流子浓度为4.10×1021cm-3。     

薄膜厚度和退火温度对纳米多晶硅薄膜特性影响

以高纯SiH4为气源,采用低压化学气相沉积方法在p型〈100〉晶向单晶硅上620℃制备纳米多晶硅薄膜,对不同薄膜厚度纳米多晶硅薄膜分别在700、800、900℃进行高温真空退火,通过X射线衍射(XRD)、Raman光谱(Raman)、场发射扫描电子显微镜(SEM)和原子力显微镜(AFM)研究薄膜厚度、退火温度对薄膜结晶取向、表面形貌等结构特性影响。结果表明,随薄膜厚度增加,薄膜取向显著且多晶特征明显,沉积薄膜多晶取向为〈111〉、〈220〉和〈311〉晶向,择优取向为〈111〉晶向,TO模强度减弱且加宽,晶粒大小增加;同一薄膜厚度,随真空退火温度升高,X射线衍射峰强度增强,TO模强度增强。     

Microstructural and electrical properties in textured lead calcium lanthanum titanate thin films deposited on a Pt/Ti/SiO2/Si substrate

Textured Ca modified (Pb,La)TiO₃ (PLCT) films were deposited on Pt/Ti/SiO₂/Si substrates using a metal-organic decomposition (MOD) process. The microstructure of the PLCT thin film was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM). Electric properties were measured using the Pt/PLCT/Pt capacitor structure. The PLCT films exhibit good ferroelectric and dielectric properties.     

Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films

Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60°C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted.     

Preparation and characterization of nanostructured copper bismuth diselenide thin films from a chemical route

Thin films of copper bismuth diselenide were prepared by chemical bath deposition technique ontoglass substrate below 60°C. The deposition parameters such as time, temperature of deposition and pH of the solution, were optimized. The set of films having different elemental compositions was prepared by varying Cu/Bi ratio from 0·13–1·74. Studies on structure, composition, morphology, optical absorption and electrical conductivity of the films were carried out and discussed. Characterization includes X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX), absorption spectroscopy, and electrical conductivity. The results are discussed and interpreted.     

医用金属表面溶胶-凝胶法和离子束合成TiO2薄膜的结构、性能比较

采用溶胶－凝胶法和离子束增强沉积法在医用NiTi合金表面制备TiO2薄膜以提高其生物相容性。利用X射线衍射（XRD）、原子力显微镜（AFM）和X光电子能谱（XPS）对薄膜的结构、表面形貌及组成进行了比较研究；电化学腐蚀实验表明，两种方法制备的TiO2薄膜对金属基体均起到一种保护膜的作用，能够提高医用金属材料在模拟体液中的抗腐蚀性；对薄膜表面固定肝素抗凝血分子进行研究发现，溶胶－凝胶法制备的TiO2薄膜表面能够获得较好的肝素固定效果。     

Structure and Characteristics of Oxide Films Containing Ca and P on Ti Substrate

The ceramic coating was formed by using microarc oxidation (MAO) in the electrolytic solution of β-Glycerophosphate sodium salt pentahydrate (β-GP) and calcium acetate (CA). The microstructure, phase structure and phase composition were investigated with scanning electron microscopy (SEM), atomic force microscope (AFM), energy dispersive X-ray microanalyser (EDX), X-ray photoelectron spectroscopy (XPS), electron probe micro analyzer (EPMA) and X-ray diffraction (XRD). Investigation of the chemical composition of the coating with EDX revealed that Ca and P of high concentration existed in oxide films. XRD patterns indicated that the oxide film was composed of only anatase at low voltage discharge, and that rutile peaks appear in addition to anatase peak with increasing MAO voltage. Despite the existence of Ca and P, compounds concerning Ca and P were not detected in the oxide film.     

Effect of Al dopants on the structural,optical and gas sensing properties of spray-deposited ZnO thin films

Undoped and Al-doped ZnO thin films were deposited on glass substrates by the spray pyrolysis method. The structural, morphological and optical properties of these films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV–Vis spectroscopy, photoluminescence (PL) and photoconductivity (PC) measurements, respectively. XRD analyses confirm that the films are polycrystalline zinc oxide with the hexagonal wurtzite structure, and the crystallite size has been found to be in the range 20–40 nm. SEM and AFM analyses reveal that the films have continuous surface without visible holes or faulty zones, and the surface roughness decreases on Al doping. The Al-doped films have been found to be highly transparent (>85%) and show normal dispersion behavior in the wavelength range 450–700 nm. The doped films show only ultraviolet emission and are found to be highly photosensitive. Among all the films examined, at 300 °C the 1.0 at% Al-doped film shows the selective high response (98.2%) to 100 ppm acetone concentration over to methanol, ethanol, propan-2-ol, formaldehyde and hydrogen.     

Low temperature deposition of ultrathin molybdenum carbide films and microstructural characterisation

Abstract

Nanostructured thin Mo₂C (30 nm) films were prepared on p-Si(100) substrate at room temperature using fast atom beam source sputtering (FABS) technique. The films were characterised using four point probe (FPP), SEM, EDAX, RBS, AFM and XRD measurements. The as deposited Mo₂C films were found to have nanocrystalline structure. Single phase hcp β-Mo₂C phase formation was observed in low carbon contents films. XRD analysis indicates that increased carbon contents in film leads to formation of multiphase molybdenum carbide along with unreacted constituent metals. The surface roughness and the average grain size measured by AFM were of the order of ～4 and about 2–4 nm respectively.     

Surface Morphology, Structural and Magnetic Properties of Electrodeposited NiFeCu/Cu Films

The magnetic and structural properties of the NiFeCu/Cu films electrodeposited on polycrystalline titanium (Ti) substrates and their characterizations were studied. The structural analysis by X-ray diffraction (XRD) has revealed that all films have face-centred cubic (FCC) structure. On the other hand, the XRD analysis showed that the degree of (111) texture is dependent on the Cu content within the film. The composition analysis was carried out by energy-dispersive X-ray spectroscopy (EDX). The result of EDX indicated that the Cu content within the film increases with increasing of non-magnetic Cu layer thickness. The hysteresis loops of the films measured by vibrating sample magnetometer (VSM) showed that all films have a small coercivity typical for soft magnetic materials. The surface morphological structure of the films was investigated by atomic force microscopy (AFM). AFM images indicated that all films have main grains (globular islands) and smaller secondary grains on the main grains with different sizes. The differences observed in the magnetic properties of the films were attributed to the Cu content within the films.     

Deposition of nanocrystalline ZnO by wire explosion technique and characterization of the films' properties

ZnO films deposited on glass, quartz and Al on silicon mono-crystal Si (100) substrates by using the wire explosion technique were investigated by X-ray diffraction (XRD), UV–VIS spectroscopy, scanning electron (SEM) and atomic force microscopy (AFM) measurements. X-ray diffraction measurements have shown that ZnO films are mainly composed of (100), (002) and (101) orientation crystallites. The post-deposition thermal treatment at 600 °C temperature in air has shown that the composite of Zn/ZnO film was fully oxidized to ZnO film. The XRD spectra of the film deposited in oxygen atmosphere at room temperature present high intensity dominating peak at 2h = 36, 32° corresponding to the (101) ZnO diffraction peak. The small fraction of the film (7%) corresponds to the (002) peak intensity at 2h = 34, 42°. This result indicates the good crystal quality of the film and hexagonal wurtzite-type structure deposited by zinc wire explosion. The optical absorption spectra shows the bands at 374, 373 and 371 nm corresponding to deposition conditions. The SEM analysis shows that ZnO films presented different morphologies from fractal network to porous films depending on deposition conditions. AFM analysis revealed the grain size ranges from 50 nm to 500 nm. The nanoneedles up to 300 nm in length were found as typical structures in the film. It was demonstrated that the wire explosion technique is a feasible method to produce ZnO crystalline thin films and nanostructures.     

医用金属表面溶胶-凝胶法和离子束合成TiO2薄膜的结构、性能比较

采用溶胶-凝胶法和离子束增强沉积法在医用NiTi合金表面制备TiO₂薄膜以提高其生物相容性.利用X射线衍射（XRD）、原子力显微镜（AFM）和X光电子能谱（XPS）对薄膜的结构、表面形貌及组成进行了比较研究;电化学腐蚀实验表明,两种方法制备的TiO₂薄膜对金属基体均起到一种保护膜的作用,能够提高医用金属材料在模拟体液中的抗腐蚀性;对薄膜表面固定肝素抗凝血分子进行研究发现,溶胶-凝胶法制备的TiO₂薄膜表面能够获得较好的肝素固定效果.