不同X射线管电压下CsI和CsI(Tl)晶体的X射线辐照致发光

在室温(290 K)和低温(25 K)下,测量了从11～40 kV的一系列管电压下X射线激发纯CsI和CsI (Tl)晶体的辐照致发光(RL)谱.结果表明:在固定温度下,管电压变化后, 305 nm和340 nm的本征发光带和580 nm的非本征发光带的形状结构均不发生变化,只是其强度发生变化.对所测得的各发光带强度随管电压的变化关系用抛物线模型进行了拟合分析,得到了较好的结果.同时还发现纯CsI和CsI (Tl)晶体中所有本征RL发光带强度与X射线强度基本上成正比关系,而当管电压增加时,CsI (Tl)晶体中非本征发光带强度的增加速度慢于本征发光带.分析认为,290 K时这可能与样品中另一个位于400 nm左右的发光带有关;而在25 K时则可能和H心与VK心的竞争有关.     

CsI(Tl)闪烁晶体研究进展

CsI(Tl)闪烁晶体光产额高于BGO晶体4倍多,辐照长度较NaI(Tl)晶体短,机械性能好,是一种优良实用的闪烁晶体材料.CsI(Tl)晶体的发光中心包括激活剂发光中心[Tl(Ⅰ)和Tl(Ⅱ)]和辐照诱导缺陷发光中心.CsI(Tl)晶体的发射谱峰值位于550nm,能与硅光二极管配合组成性能优良的探测器,广泛应用于核技术和高能物理等领域.目前主要采用坩埚下降法和连续加料法生长.本文综述了CsI(Tl)闪烁晶体的生长、缺陷、闪烁性能及其应用领域的研究与发展趋势.     

沉淀法制备(Eu0.045Li3xNa3yGdz/Luw)2O3纳米晶及发光性能研究

采用沉淀法制备了(Eu0.045Li3xNa3yGdz)2O3和(Eu0.045Li3xNa3yLuw)2O3纳米晶,通过测量粉体的XRD、SEM、激发谱、发射谱,讨论了不同比例阳离子合成样品的发光特性.实验表明,800℃下,Eu3+、Li+、Na+完全掺入G2O3和Lu2O3晶格,且对基质立方相无影响;添加了碱金属锂、钠离子的样品,晶粒生长更完善;对于氧化钆基质,Eu3+、Li+、Na+、Gd3+比例为4.5:4:4:87.5(摩尔百分比)时,样品发光比不掺碱金属锂、钠离子的样品发光提高6倍;对于氧化镥基质,Eu3+、Li+、Na+、Lu3+的摩尔百分比为4.5: 1:1:93.5时,样品比不掺碱金属锂、钠离子的样品发光提高约4倍.     

坩埚下降法生长钨酸镉晶体的闪烁性能

以高温固相反应合成CdWO4多晶为原料,采用垂直坩埚下降法生长出大尺寸完整CdWO4晶体,就所生长CdWO4晶体进行了闪烁发光性能的测试表征,包括紫外可见透射光谱、光致发光光谱、光致发射衰减时间、X射线激发发射光谱、相对光产额以及γ射线辐照硬度.结果表明,该单晶在可见光区具有良好的光学透过性,其光致发光与X射线激发发射光的峰值波长位于475 nm左右,其光致发射衰减时间为842 ns;以CsI∶Tl晶体为基准样品,测得γ射线激发发光的光产额相当于基准样品的51.5％～57.4％,在γ射线辐照条件下其辐照硬度达107 rad.     

Na3ZrF7:Er/Yb纳米颗粒的合成及荧光性能研究

采用热分解法制备多种核壳结构的Na3ZrF7:Er/Yb纳米颗粒,并对制备的上转换纳米颗粒的形貌、晶相以及发光特性进行研究.在980nm激发光激发下,与单核的Na3ZrF7:Er3+2;,Yb3+20;纳米颗粒相比,核壳结构的Na3ZrF7:Er3+2;,Yb3+20;@CaF2上转换纳米颗粒荧光强度提高了5倍.把Yb3+/Nd3+共掺的四方相NaYF4层包覆在Na3ZrF7:Er3+2;,Yb3+20;@CaF2纳米颗粒上,我们实现了Na3ZrF7@CaF2@NaYF4纳米颗粒在808nm激发下较强的上转换红光发射,发射光的红绿比在10左右,并对其发光机制作出了解释.     

CaCO3基红色荧光粉的合成及其光谱性能分析

采用水热法合成CaCO3: Eu3+和CaCO3: Eu3+, Li+红色荧光粉,研究了掺杂离子对样品的物相、晶粒形貌和光谱性质的影响.采用X射线衍射(XRD)、扫描电子显微镜(SEM)、傅立叶红外光谱(FT-IR)、激光拉曼光谱(Raman)和荧光光谱(PL-PLE)等手段表征样品的性能.结果表明:样品均为三角晶系的方解石结构;Eu3+作为发光中心取代了基质CaCO3中Ca2+的位置;Li+作为电荷补偿剂有助于Eu3+更好的进入到基质的晶格中,提高样品的发光性能;样品CaCO3: Eu3+ 和CaCO3: Eu3+,Li+的最大激发峰分别位于254 nm(Eu3+-O2-的电荷迁移跃迁)和396 nm(7F0→5L6跃迁),其最强发射峰分别位于 616 nm和610 nm,均为电偶极跃迁5D0→7F2,属于红色发光.     

碱金属和三价Eu离子共掺杂的碱土钼酸盐荧光粉发光性能

采用固相法制备了用于白光LED的Eu3+和碱土离子(Li+,Na+,K+)共激活的钼酸盐荧光粉AMoO4(A=Ca,Sr).通过X射线衍射图片看出,Eu3+和Na+的掺入降低了晶格参数,同时衍射峰强度明显增加.本文研究了荧光粉的激发光谱和发射光谱.它的激发谱覆盖了从240nm到500nm的范围,在470nm处有一个激发峰,这说明它能够被GaN LED发出的蓝光有效激发.发射谱表明它能够发射峰值位于616nm和624nm的红光.实验研究了碱土离子的量(摩尔分数)对AMoO4:Eu3+发光性能的影响,0.25是最合适的掺杂量.反应时间和反应温度对发光性能也有很大的影响.搅拌均匀的反应物在800℃灼烧3h得到的样品发光强度最强.     

8英寸氟化钙单晶生长

氟化钙(CaF₂)晶体是一种性能优良的光学晶体材料。本研究用坩埚下降法生长了8英寸(20.32 cm)氟化钙单晶,晶体外观完整,无开裂及散射等宏观缺陷。定向切割后得到ϕ40 mm×6 mm的透明圆柱形晶体毛坯,对毛坯样品进行二次退火处理后进行研磨抛光得到最终样品。对该系列样品进行紫外可见透过率、光学均匀性、应力双折射等测试。结果显示在200 nm波长处晶体透过率达到90%,平均应力双折射小于0.5 nm/cm,光学均匀性达到2.63×10^-6。     

Cs2HfCl6和Cs2HfCl6∶Tl晶体的生长、光学和闪烁性能研究

本文使用坩埚下降法制备了ø7 mm的未掺杂Cs₂HfCl₆与Cs₂HfCl₆∶0.2%Tl(摩尔分数)单晶,对晶体样品进行了物相、杂质含量、光学和闪烁性能的研究。该晶体属于立方晶系,空间群为Fm3m。在荧光和X射线激发下,未掺杂Cs₂HfCl₆晶体的发光主峰皆为380 nm,对应于自陷激子发光。Cs₂HfCl₆∶0.2%Tl晶体在荧光和X射线激发下,发射光谱中除了存在380 nm处的自陷激子发光,也存在505 nm处Tl⁺的sp-s²跃迁发光。Cs₂HfCl₆和Cs₂HfCl₆∶0.2%Tl晶体的光输出分别为37 000 photons/MeV和36 500 photons/MeV,在662 keV处的能量分辨率皆为3.5%。在¹³⁷Cs源激发下,Cs₂HfCl₆晶体的闪烁衰减时间为0.37 μs (4.2%)、4.27 μs (78.9%)和12.52 μs (16.9%),Cs₂HfCl₆∶0.2%Tl晶体的闪烁衰减时间为0.33 μs (3.5%)、4.09 μs (81.9%)和10.42 μs (14.5%)。     

Eu3+,Tb3+共掺杂的NaGd(WO4)2颜色可调荧光粉的水热合成及发光性质研究

在不添加任何模板剂的情况下,采用温和水热法,制备了一系列NaGd0.96-x(WO4)2:0.04Tb3+,xEu3+(x=0,0.005,0.01,0.02,0.04,0.06,0.08,0.10,0.12,0.14,0.16,0.18)荧光粉.采用X射线粉末衍射仪(XRD)、扫描电子显微镜(SEM)以及荧光分光光度计分别对所得样品的物相结构、形貌粒度及发光性能进行分析表征.结果表明:所合成的样品为NaGd(WO4)2的纯相,属四方晶系白钨矿结构.其形貌为规整的四方盘形,尺寸均一、分散性良好.系列样品均能被近紫外光有效激发,通过改变NaGd(WO4)2中Eu3+/Tb3+的掺杂浓度,实现了对荧光粉发光颜色由绿色到红色的全色调控.     

Growth and characterization of undoped and thallium doped cesium iodide single crystals

Single crystals of pure and thallium (Tl) doped cesium iodide (CsI) have been grown by melt growth (Bridgman) technique. The grown crystals were subjected to powder X-ray diffraction and high-resolution XRD analysis. The cut and polished crystals were characterized for luminescence studies. UV-visible transmission studies have been carried out on the grown crystal in the wavelength range 200–650 nm. From the transmission spectrum it was found that the cut off wavelength increases with increase in Tl concentration and the transmittance is about 70%. The 0.06 mol% of Tl doped CsI crystal shows a good energy resolution of 7.6%. The hardness decreases for increasing the doping concentration. Etching studies have been carried out on doped and undoped crystals using methanol and water as etchant.     

Observation of the periodic fluctuant dendritic structure in an Al–38 wt% Cu hypereutectic alloy processed by ACRT-B method

The microstructure of periodic fluctuant dendritic θ in a matrix of +θ eutectic was obtained in an Al–38 wt% Cu alloy processed by ACRT-B method grown at growth velocities (V) ranging from 5 to 60 μm/s and crucible rotating in a trapezoidal way with maximum rotation rates (Ω_max) ranging from 100 to 400 rpm. Formation of this structure is explained by the influence of the periodical Ekman flow on the growth of dendritic θ during the spin-up and spin-down process. It was also observed that the +θ eutectic between the primary dendrites of θ (CuAl₂) is not periodic and fluctuant during ACRT-B process. This is quite different from our previous observation of periodic eutectic in Al–Cu eutectic processed by similar ACRT-B method.     

Ce∶GAGG与CsI(Tl)闪烁晶体性能对比研究

研究了不同反射层封装方式和与Si-PM不同耦合方式对Ce∶GAGG和CsI(Tl)闪烁晶体光输出和能量分辨率的影响,比较了Ce∶GAGG和CsI(Tl)闪烁晶体的透过率和衰减时间。实验结果表明:通过优化闪烁晶体的反射层材料和耦合方式,能大幅度提高Ce∶GAGG和CsI(Tl)闪烁晶体的光收集效率;Ce∶GAGG闪烁晶体的光输出、能量分辨率、透过率、衰减时间指标均优于CsI(Tl)闪烁晶体。Ce∶GAGG闪烁晶体使用TiO₂反射层材料封装和硅脂耦合,测试得到¹³⁷Cs放射源在662 keV最佳能量分辨率为4.89%。     

Luminescence gap in hydrogenated amorphous silicon

The “luminescence gap” is used instead of the thermalization gap and the hopping-gap because the gap is obtained from the luminescence measurement. The luminescence gaps in hydrogenated amorphous silicon (a-Si:H) are observed in the temperature range from 4.2 to 225 K for the films prepared at different substrate temperatures 170 to 300 °C by plasma CVD. It is shown from the temperature dependence of the luminescence gap that the luminescence edges are at the localized band tail states at which the waiting time for the hopping is equal to the life time of the luminescence. The excitation energy dependence of the luminescence peak energy similar to that of the porous Si has been observed.     

Modification of eutectic morphology

In recent years, considerable interest had developed in the potential use of the eutectic reaction to produce “in situ composites.” For this purpose, close control of the microstructure produced by eutectic freezing is required. The most widely known example of structure control in a eutectic is the “modification” of the morphology of the Al-Si eutectic by the addition of a small quantity of Na or by a suitable change in freezing conditions. Many other cases of structure modification have been observed, notably fibrous-lamellar transitions. The factors governing such modification of eutectic morphology will be reviewed and the prospects for improved structure control in eutectic systems will be discussed.     

Kinetics of luminescence of CsI single crystals scavenged by Y3+

CsI single crystals were grown from the melt scavenged by Y³⁺ (YCl₃) addition in 6.7·10⁻⁴–6.7·10⁻³ mol·kg⁻¹ range. The addition of the scavenger amounts comparable with the total concentration of the oxygen‐containing admixtures in molten CsI results in complete destruction of the latter. Because of this, the intensity of the band with a maximum at 2.8 eV in radioluminescence spectra caused by the oxygen‐containing admixtures (anion vacancies) considerably decreases, and the fraction of the slow 2μs‐component corresponding to these admixtures becomes lower than 0.01 (0.007). The addition of larger quantities of YCl₃ leads to the appearance of a wide band with a maximum at 2.8 eV caused by cation vacancies, and the intensity of the slow 2μs‐component increases to 0.02. The maximum ratio of two faster components with the decay constants equal to 7 and 30 ns reaches 0.65:0.33 at Y³⁺ concentration in CsI melt equal to 6.7·10^‐3 mol·kg^‐1, the effective luminescence time of fastest components is ca 14 ns. The dependence of the ‘Fast/Total ratio’ on Y³⁺ concentration passes through its maximum (0.81) corresponding to the equivalence of Y³⁺ and O²⁻ concentrations in the growth CsI melt.     

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

Transmission electron microscopy (TEM), cathodoluminescence in the scanning electron microscope (SEM-CL) and photoluminescence (PL) studies were performed on a 30 nm GaN/2 nm In_0.28Ga _0.72N/2 μm GaN/(0 0 0 1) sapphire single quantum well (SQW) sample. SEM-CL was performed at low temperatures ≈8 K, and at an optimum accelerating voltage, around 4–6 kV to maximise the quantum well (QW) luminescence. The CL in the vicinity of characteristic “V-shaped” pits was investigated. The near band edge (BE) luminescence maps from the GaN showed bright rings inside the boundaries of the pits while the QW luminescence maps showed pits to be regions of low intensity. These observations are consistent with TEM observations showing the absence of QW material in the pits. Variations in both the BE and QW maps in the regions between the pits are ascribed to threading edge dislocations. The CL and PL QW luminescence was observed to blue-shift and broaden with increasing excitation intensity. This was accompanied by decreasing spatial resolution in the CL QW maps implying an increasing carrier diffusion length in the InGaN layer. The reasons for this behaviour are discussed. It is argued that screening of the piezoelectric field in the material may account for these observations.     

Physical chemistry of binary organic eutectic and monotectic alloys; 1,2,4,5-tetrachlorobenzene−β-naphthol and 1,2,4,5-tetramethylbenzene-succinonitrile systems

Phase diagrams of 1,2,4,5-tetrachlorobenzene–β-naphthol and 1,2,4,5-tetramethylbenzene–succinonitrile systems which are organic analogues of a nonmetal–nonmetal and a nonmetal–metal system, respectively, show the formation of a simple eutectic (melting point 103.7°C) with 0.71 mole fraction of β-naphthol in the former case and a monotectic (melting point 76.0°C) with 0.07 mole fraction of succinonitrile and a eutectic (melting point 52.5°C) with 0.97 mole fraction of succinonitrile in the latter case. The growth behaviour of the pure components, the eutectics and the monotectic studied by measuring the rate of movement of the solid–liquid interface in a capillary, suggests that the data obey the Hillig–Turnbull equation, v=u(ΔT)ⁿ, where v is the growth velocity, ΔT is the undercooling and u and n are constants depending on the nature of the materials involved. From the values of enthalpy of fusion determined by the DSC method using Mettler DSC-4000 system, entropy of fusion, interfacial energy, enthalpy of mixing and excess thermodynamic functions were calculated. The optical microphotographs of pure components and polyphase materials show their characteristic features.     

Spectrally resolved electroluminescence microscopy and μ-electroluminescence investigation of GaN-based LEDs

We have studied the luminescence properties of GaN LEDs by electroluminescence microscopy (ELM) and micro-electroluminescence (μ-EL) spectroscopy. Spatial inhomogeneity in the deep level region of the spectra is observed in spectrally resolved ELM images. Room temperature μ-EL spectra measured from 5×5 μm² regions show anti-correlation of the defect-related recombination (E=1.95–2.45 eV) with the band-edge emission (E=3.18 eV).     

Porous crystal structures obtained from directionally solidified eutectic precursors

Interconnecting cage-like porous structures of several halide compounds were prepared by the selective leaching of one eutectic phase method. The binary eutectic precursors were prepared by directional solidification using the Bridgman crystal growth technique. Porous NaMgF₃ (40% pore volume), CaF₂ (57% pore volume) and BaF₂ (43% pore volume) crystals were obtained after water leaching the NaF component of the directionally solidified NaF/NaMgF₃, NaF/CaF₂ and NaF/BaF₂ eutectics with the appropriate entangled microstructure. The growth conditions for eutectic-coupled growth and the morphology of the eutectics have been determined. In the coupled growth regime, the size of the eutectic phases “λ” is fairly uniform and varies with the eutectic growth rate “v” as λ²v=constant, which allows us to control the pore size within the 0.5–10 μm range. The simplicity and versatility of the eutectic growth also allows us to fabricate highly aligned porous structures at relatively high production rates.