平行双线BCI等效替代强场连续波电磁辐射实验研究

由于互联系统信号传输的基础是双线,以低频线缆耦合通道中比较典型的平行双线为研究对象,针对互联系统单端为非线性受试设备的电磁辐射敏感度进行实验研究。讨论了典型互联系统辐射与注入的等效以及在高场强下的外推条件,对所选非线性器件是否满足实验要求进行了实验验证。分析了大电流注入法等效替代强场连续波电磁辐射的实验结果,并对辐照时天线极化方式不同以及有无大电流注入探头对辐射与注入等效研究的影响进行了分析。     

注入电流对绿光高压LED光电特性的影响

设计并制备了12 V的GaN基绿光高压发光二极管(LED),并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50mA,测试温度为25℃。实验结果表明:电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对GaN基绿光高压LED的改进优化具有一定的参考价值。     

注入电流对绿光高压LED光电特性的影响

设计并制备了12 V 的GaN基绿光高压发光二极管（LED）,并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50 mA,测试温度为25 ℃。实验结果表明：电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对 GaN基绿光高压 LED 的改进优化具有一定的参考价值。     

屏蔽两芯线BCI等效替代辐照理论模型研究

针对大范围空间模拟强场电磁环境进行辐射效应试验难度大以及现有大电流注入（BCI）技术应用于非线性系统试验存在空白的问题,开展了屏蔽线耦合通道BCI等效替代辐照试验方法研究。以受试设备响应相等作为等效依据,建立了辐照法和注入法两种条件下受试设备响应的分析模型,推导出了注入激励源电压与辐照场强之间的等效对应关系,提出了BCI等效替代辐照的条件和试验方法,并进行了试验验证。研究结果表明,BCI方法是可以精确等效受试设备的辐照效应试验,试验误差不超过2 dB,能够满足工程的实际需求。     

自主研制核磁共振波谱仪的性能评估

主要介绍自主研制500 MHz核磁共振谱仪的性能评估情况,旨在建立一台功能完整的核磁共振波谱仪. 首先利用系统调试使控制台各个硬件单元在用户软件控制下实现NMR实验中的基本功能,然后通过性能测试保障功率线性度、信号稳定性和场频联锁的可靠性,实验验证了谱仪溶剂峰压制的效果,并获得良好的探头线形指标（0.43/5.46/10.73 Hz）和¹H灵敏度指标（信噪比为728∶1）,表明自主研制500 MHz核磁共振波谱仪系统能够满足常规核磁共振实验需求.     

基于MOPA结构的1120nm掺Yb光纤放大器

基于主振荡功率放大器,采用1120nm光纤激光器作为种子激光,将其注入20m大模场面积单模双包层掺Yb光纤放大器,并用976nm半导体激光器泵浦实现了1 120nm信号光输出.实验中将注入种子激光功率预设为10mW,当半导体激光器泵浦功率增大至1.5 W时,放大器系统开始输出1 120nm信号光.当泵浦功率低于3.4W时,信号光功率随泵浦功率缓慢增长,系统斜率效率较低;而当泵浦功率高于3.4W时,信号光功率随泵浦功率线性增长,斜率效率明显增大,达到48.5%.限于最大注入泵浦功率为6.8W,放大器输出最高1 120nm信号光功率为1.97W,总的光-光转化效率为29%.输出信号光中心波长为1 120.89nm,线宽为0.02nm,极好地保持了种子激光的特性.结合实验情况,利用双包层光纤放大器的稳态理论模型,采用有限差分方法模拟了放大器输出信号光功率随泵浦光功率的变化曲线,结果显示理论模拟所得变化趋势与实验结果吻合良好,系统将在泵浦功率达到200W左右时达到饱和状态,说明目前光纤放大器系统具有很大的功率提升空间.     

基于锥形探头光纤表面等离子共振传感性能优化

为提高系统的测量范围、灵敏度与线性度,利用拉锥光纤替代均匀光纤,进行表面等离子共振光纤传感器性能优化研究.通过大功率激光熔融拉锥工艺,结合圆环靶磁控溅射制备了锥形光纤等离子共振探头;利用光纤光谱仪,在1.33-1.43RIU折射率变化范围内,以探头的表面等离子共振吸收谱对称性、吸收谱半高全宽的稳定性,以及探头共振吸收波长分辨率为指标,进行探头性能测试与筛选;利用筛选出的探头,基于调频光谱原理构建闭环检测系统;在相同检测对象与检测环境条件下,以阿贝折射率仪测量结果为参照,对均匀探头与锥形探头的检测结果进行比较.结果表明,在1.33-1.43RIU范围内,相对于均匀光纤探头0.00032RIU的测量准确度、2 600nm/RIU的波长分辨率,锥形探头可在较大折射率变化范围内,以较好的线性度,实现0.00003RIU测量灵敏度和约4 500nm/RIU的波长分辨率.     

功率效应对功率LED热阻的影响

分析比较了在不同输入功率条件下1 W GaN基LED样品的热学特性,得出了有效热阻随加载功率的变化规律。基于瞬态热测试方法,讨论了结-环境热阻与输入功率之间的关系。加载电流为100~500 mA的区域随着电功率增加,有效热阻明显降低;当电流增至500 mA以上时,有效热阻减小幅度越来越小;而当加载电流为900~1 650 mA时,结-环境的热阻随着电功率的增加而缓慢升高。随着注入电功率的增加,在不同电流区域同一个样品的热阻变化趋势却是相反的,这个现象归因于串联电阻热耦合随输入功率的变化。该结果对分析功率型LED热特性具有一定参考价值。     

808nm大孔径垂直腔面发射激光器研究

垂直腔面发射激光器(VCSEL)中的载流子聚集效应使注入到有源区的工作电流只是通过边缘环形区域很窄的通道,激光功率密度分布不均匀;尤其当器件尺寸较大时,激射光斑呈现环状,环中间光强很弱.这是研制电抽运高功率大尺寸VCSEL尤为突出的技术难题.采用新型结构成功研制出808 nm波段高功率大孔径VCSEL,在注入电流为1A时,室温下连续输出功率达0.3 W. 关键词： 半导体激光器 垂直腔面发射激光器 高功率 大孔径     

临近空间高功率微波辐照放电试验技术

随着高功率微波技术的发展, 电子设备面临强电磁辐射攻击的威胁越来越严重, 对电子设备的防护加固提出了更高要求, 临近空间飞行器及其放电效应是目前较少考虑的环节, 且缺少相应的环境试验条件。文章提出了一种将临近空间气体环境与高功率微波电磁环境相结合的方法, 在柱形真空罐内壁布置吸波材料, 使用MW级S波段微波源及辐射聚焦系统在腔室中心形成强电磁辐射区, 以便开展相关辐照放电试验研究。针对脉冲微波强场监测, 通过光纤电场探头测量小信号连续波的方式进行等效传递, 中心场强最高超过2kV/cm。利用该试验装置可开展临近空间电子学系统在高功率微波辐照下的放电击穿研究, 对薄弱环节分析及防护加固提供帮助。     

Luminescence and generation of laser radiation in zinc selenide and cadmium sulfide single crystals exposed to high-voltage subnanosecond pulses

The action of high-voltage subnanosecond pulses on A^IIB^VI semiconductor compounds is studied. A negative pulse with a duration of up to 500 ps is applied to electrodes of a special shape. The pulse amplitude can be varied from 20 to 250 kV. Plane-parallel plates with a thickness of 1–2 mm made of bulk zinc selenide or cadmium sulfide single crystals are placed between the electrodes. Experiments are carried out in air without submerging single crystal plates in a liquid dielectric medium. As soon as a voltage pulse is applied, diverging discharges propagate from sharp edges of the negative electrode along electric field lines. With increasing voltage, generation of laser radiation is observed in the bulk of the semiconductor, displaying all its characteristic features, such as a sharp increase in the radiation power, narrowing the spectrum, and the radiation directionality. For zinc selenide at room temperature, the radiation characteristics are as follows: the wavelength is 480 nm, the radiation divergence is about 3°, and the peak pulse power is 600 W.     

Pressure dependence of the electrical potential and electrontemperature in a microwave-generated plasma

The electron temperature in a stationary hydrogen plasma has been studied using a Langmuir probe. The measurements have been carried out over the pressure range from 3 mbar (2.25 torr) to 25 mbar (18.75 torr). The applied microwave power was varied from 50 to 450 W. The electron temperature shows a linear dependence on the applied microwave power. The self-space-charge field (in volts) of a hydrogen plasma shows a saturation behavior at higher microwave powers. The maximum value at the saturation of the field equals 6.8 V at a gas pressure of 15 mbar (11.25 torr) for all values of the input microwave radiation power. The polarities of the self-space-charge electric field are similar above this value and below it     

Highly efficient and broadband Si homojunction structured near-infrared light emitting diodes based on the phonon-assisted optical near-field process

We fabricated a highly efficient, broadband light emitting diode driven by an optical near field generated at the inhomogeneous domain boundary of a dopant in a homojunction bulk Si crystal and evaluated its performance. To fabricate this device, a forward current was made to flow through a Si p–n junction to anneal it. During this process, the device was irradiated with near-infrared light, producing stimulated-emission light using a two-step phonon-assisted process triggered by the optical near field, and the annealing rate was controlled in a self-organized manner. The device emitted light in a wide photon energy region of 0.73–1.24 eV (wavelength 1.00–1.70 μm). The total power of the emitted light with 11 W of electrical input power was as high as 1.1 W. The external power conversion efficiency of the emitted light was 1.3%, the differential external power conversion efficiency was 5.0%, the external quantum efficiency was 15%, and the differential external quantum efficiency was 40%. The dependency of the emitted light power density on the injected current density clearly showed a characteristic reflecting the two-step phonon-assisted transition process.     

中物院高功率THz FEL装置的理论分析和优化设计

在1~3 THz频段内设计了11个分点频率,对每一频率的对应的场强和电子束能量进行了选取和计算。模拟结果表明:采用目前参数基本能够达到设计要求;辐射频段在2.6 THz附近时装置输出功率和增益都比较高,可以先锁定这个频段附近进行实验的调试;在长波段即1 THz左右时,滑移效应显著,腔增益和输出功率较低,实验实现比较困难,因此在1 THz频段附近必须积极想办法来提高输出功率。     

一种强电磁脉冲辐射场均匀性校准测试装置

目前,辐射场均匀性主要采用单点多次测试的方式来实现,该方式将不可避免地引入因辐照信号自身时变特性带来的测量误差;此外,单点多次测试极大地增加了测试时间、测试效率低下。为解决这些问题,本文设计了一种可实现一次多点测试、测试区域可自动调节的装置,仿真表明:该装置可满足500 mm×500 mm~1500 mm×1500 mm区域辐射场9点均匀性测试;在此基础上,在1000 mm×1000 mm测试区域,针对1.35 GHz和2.88 GHz两个频点开展了实验验证,实验表明:设计的测试装置可满足辐射场均匀性9点自动测试要求,大幅提高了测试效率和自动化程度。     

Acoustic power measurement of high intensity focused ultrasound in medicine based on radiation force

How to measure the acoustic power of HIFU is one of the most important tasks in its medical application. In the paper a whole series of formula for calculating the radiation force related to the acoustic power radiated by a single element focusing transducer and by the focusing transducer array were given. Various system of radiation force balance (RFB) to measure the acoustic power of HIFU in medicine were designed and applied in China. In high power experiments, the dependence of radiation force acting the absorbing target on the target position at the beam axis of focusing transducer was fined. There is a peak value of "radiation force" acting the absorbing target in the focal region when the acoustic power through the focal plane exceeds some threshold. In order to avoid this big measurement error caused by the 'peak effect' in focal region, the distance between the absorbing target of RFB and the focusing transducer or transducer array was defined to be equal to or less than 0.7 times of the focal length in the National Standard of China for the measurements of acoustic power and field characteristics of HIFU. More than six different therapeutic equipments of HIFU have been examined by RFB for measuring the acoustic power since 1998. These results show that RFB with the absorbing target is valid in the acoustic power range up to 500W with good linearity for the drive voltage squared of focusing transducer or array. The uncertainty of measurement is within +/-15%.     

980nm半导体激光器n型波导结构优化

为了提高980nm半导体激光器的输出功率并获得较小的远场发散角,在非对称波导结构的基础上设计了n型波导结构,即在n型波导中引入高折射率的内波导层。采用理论计算和SimLastip软件模拟对常规非对称波导结构和内波导结构进行了研究。利用分子束外延系统生长980nm内波导结构的外延材料,并制作了激光器。对于条宽为100μm、腔长为1000μm的器件,阈值电流为97mA,斜率效率为1.01W/A;当注入电流为500mA时,远场发散角为29°(垂直向)×8°(水平向),与模拟结果相符。理论计算和实验结果表明:较之于常规非对称波导结构,内波导结构可有效降低光场限制因子,提高输出功率,减小远场发散角。     

A Continuously Tunable Ka-Band Gyrotron

An experimental study was carried out to test the concept of using a gyrotron with a tapered circuit in a uniform magnetic field as a high-power tunable source of millimeter-wave radiation. It was demonstrated that the device can be used as either an oscillator or an amplifier with the operating frequency tunable by varying the magnetic field. In the oscillator mode, the tube produced a peak output power of 500-750 W with the frequency continuously tunable from 30 to 39 GHz. As an amplifier mode, the tube demonstrated an electronic gain of ~23 dB at a magnetically tunable center frequency with an instantaneous bandwidth of ~5 percent. The stability characteristics of the amplifier were also investigated.