电子型高温超导体/铁电体/巨磁阻材料异质结的生长及其电输运性质的研究

本文中采用脉冲激光沉积的方法原位制备了结构完整的La1.89Ce0.11CuO4(LCCO)/Ba0.7Sr0.3TiO3(BST)/La0.67Sr0.33MnO3(LSMO)三层膜,并在此基础上制得了类似P-I-N型的全钙钛矿结构材料异质结.在不同的温度区间对其电输运性质进行了测量.测量结果表明随着充当绝缘层的Ba0.7Sr0.3TiO3的厚度的变化,异质结的电输运机制也在变化.当其厚度到达25纳米时,整个结在低温区呈现良好的整流特性.     

锰基钙钛矿多层膜中的层间相互作用

本文采用直流磁控溅射方法在(100)取向的LaAlO3基片上制备了系列多层膜: La0.67Ca0.33MnO3-δ/La0.67Sr0.33MnO3-δ/La0.67Ca0.33MnO3-δ (LC/LS/LC).并采用标准四探针方法对所制备样品的阻温关系进行了测量. 结果表明:在零场下,当上下两层厚度一定时,随着中间层(LS)厚度增加,多层膜的电阻率减小,金属-绝缘体转变温度(TM-I)向高温方向移动.在中间层(LS)厚度保持一定时,随着上下两层(LC)厚度增加,其电阻率和金属-绝缘体转变温度(TM-I)出现同样的变化规律.基于双交换理论,我们对以上结果给出了尝试性解释.     

非化学配比锰基钙钛矿输运特性研究

本文报道了用溶胶凝胶法并经过低温(900℃)后处理制备的具有非化学配比的La2/3Ca1/3Mn1-xO3(x=0～0.10)多晶样品的电输运和磁性质的实验研究.结果表明,随x的增加,样品呈现出明显增强的非本征磁电阻效应,同时其本征磁电阻效应减弱.实验还观察到样品的颗粒尺寸随x的增加而减小的现象.基于样品的结构特征,本文讨论了其独特输运性能的形成原因.     

La0.67Ca0.33MnO3薄膜中的各向异性应变与电荷有序

本文采用脉冲激光沉积法在NdGaO3(001)单晶衬底上制备了一系列的La0.67Ca0.33MnO3薄膜,实验主要研究了薄膜的输运性质.La0.67Ca0.33sMnO3块材是铁磁金属基态,而La0.67Ca0.33MnO3/NdGaO3(001)薄膜由于各向异性应变的存在,可以观测到电荷有序绝缘相的出现.薄膜样品表...     

薄膜厚度对La1.85Sr0.15CuO4薄膜结构和超导电性的影响

使用直流同轴磁控溅射法,在SrTiO3(STO)衬底上成功制备出c取向的La1.85Sr0.15CuO4(LSCO)超导薄膜.通过电输运测量系统和X射线衍射仪研究了薄膜厚度对LSCO(x＝0.15)薄膜电学性质和晶体结构的影响.实验证明随着膜厚增加,(006)衍射峰的半高宽(Full Width at Half Maximum,FWHM)逐渐减小,薄膜的取向性增强,与此同时,薄膜的超导转变温度TC逐渐提高.     

YBa2Cu3O7-δ/La0.6Pb0.4MnO3多层膜的制备及激光感生热电电压效应的研究

采用脉冲激光沉积法在倾斜LaAlO3(100)衬底上制备了(YBa2Cu3O7-δ/La0.6Pb0.4MnO)L(L为多层膜周期数)外延多层膜.X射线衍射谱显示(YBCO/LPMO)L多层膜沿c轴生长.观察到多层膜中有很大的激光感生热电电压(LITV)出现,与YBa2Cu3O7-δ(YBCO)和La0.6Pb0.4MnO3(LPMO)单层膜相比,多层膜的LITV信号有约一个数量级的增强.讨论了影响(YBCO/LPMO)L多层膜的LITV效应的因素.     

La4/3Ca5/3Mn2O7的结构、电输运及磁性质研究

采用溶胶-凝胶法,在不同温度烧结制备了名义组分为La4/3Ca5/3Mn2O7的多晶样品.X射线结构分析以及电、磁输运性质的测量表明:La4/3Ca5/3Mn2O7形成的是La2/3Ca1/3MnO3和CaO的混合物.     

电子型高温超导体／铁电体／巨磁阻材料异质结的生长及其电输运性质的研究

本文中采用脉冲激光沉积的方法原位制备了结构完整的La1.89Ce0.11CuO4（LCCO）／Ba0．7Sr0.33TiO3（BST）／La0.67Sr0．33MnO3（LSMO）三层膜，并在此基础上制得了类似P-I-N型的全钙钛矿结构材料异质结．在不同的温度区间对其电输运性质进行了测量．测量结果表明随着充当绝缘层的Ba0．7Sr0．3TiO3的厚度的变化，异质结的电输运机制也在变化．当其厚度到达25纳米时，整个结在低温区呈现良好的整流特性．     

零磁场下La_(0.67)Sr_(0.33-x)Na_xMnO_3的电输运特性研究

采用固相反应法制备了样品La0.67Sr0.33-xNaxMnO3(x=0.05,0.10,0.15,0.20,0.25,0.33).通过样品的红外吸收光谱、Ramam光谱、ρ～T曲线以及ρ～T拟合曲线,研究了样品的晶格结构变化和输运性质.结果表明:随Na掺杂的增加,Mn-O-Mn的键长、键角变化加大;体系属于双交换作用输运机制;在低温区(TTp),用[ρ-Texp(T0/T)]拟合得很好,ρ(T)符合极化子近邻跃迁模型.     

La0.4Ca0.6Mn1-xCrxO3（x=0.00,0.08）的磁电性质研究

用固相反应法制备了La0.4Ca0.6Mn1-xCrxO3（x=0.00,0.08）多晶样品,通过XRD谱、M-T曲线、ρ~T曲线、Lnρ-T-14曲线,研究Cr^3＋替代Mn3＋对La0.4Ca0.6MnO3电荷有序相及电输运性质的影响.实验结果表明：Cr^3＋替代Mn3＋对La0.4Ca0.6MnO3电荷有序相影响...     

Electrical conductivity of YSZ film grown by pulsed laser deposition

Yttria-stabilized zirconia (YSZ) thin films, 0.6–1.5 μm, were deposited on Pt and sapphire substrates by a pulsed laser deposition (PLD) method. Their structural and transport properties have been studied by means of X-ray diffraction and electrical conductivity measurements. The in-plane and the perpendicular-to-plane conductivities (hereafter, “across-plane” conductivity) of thin films were measured and compared to that of bulk sample. X-ray diffraction and electron microscopy results showed that the films on Pt and sapphire were polycrystalline cubic with a columnar structure. Both the across-plane and the in-plane conductivities of YSZ thin film were close to that of bulk specimens. Thus no conductivity enhancement was found for the present nano-crystalline YSZ films (grain or column size, 60∼100 nm).     

T1系超导薄膜金属涂层的生长与特性研究

我们研究了T1-2212超导薄膜在带有YSZ／CeO2缓冲层和带有Ce02／YSZ／CeO2缓冲层的Ni金属RABiTS基带上的生长情况．基带上的缓冲层是采用PLD方法制备的，T1-2212薄膜的制备采用了磁控溅射和后热处理两步方法．XRD实验结果表明。T1-2212薄膜都具有很好的C轴垂直于膜面的织构，并具有双向外延生长特性．在CeO2／YSZ／CeO2／Ni基带上制作的T1-2212薄膜的Tc达到102．8K，J,（77K,0T）达到2.6MA／cm^2；在YSZ／CeO2／Ni基带上薄膜Tc可达97．7K，Jc（77K,0T）也可以达到0．45MA／cm^2.     

Tl系超导薄膜金属涂层的生长与特性研究

我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD 实验结果表明,Tl-2212薄膜都具有很好的C轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8 K,Jc(77 K,0 T)达到2.6 MA/cm2;在YSZ/CeO2/Ni基带上薄膜Tc可达97.7 K,Jc(77 K,0 T)也可以达到0.45 MA/cm2.     

Reaction between solid oxide fuel cell materials

In fabrication processes of solid oxide fuel cells, high-temperature heat treatments cannot be avoided. It will give rise to mutual reaction and interdiffusion of the cell component materials: yttria-stabilized zirconia (YSZ, electrolyte), (La, Sr)MnO₃ (cathode), Ni-YSZ cermet (anode) and (La, Ca)CrO₃ (separator). Reactivity of LaMnO₃ and YSZ was estimated by thermodynamic calculations, and it was found that the nonstoichiometry at La site in LaMnO₃ plays an important role on the reaction. Diffusion of Mn into YSZ leads to increase of La activity at the interface and promotes the reaction. Electrical conductivity of YSZ decreases when Mn dissolves in the cubic phase of YSZ. Oxidation state of the dissolving Mn varies with partial pressure of oxygen and affects the electrical properties of YSZ. Migration of Ca from (La, Ca)CrO₃ separator to other cell components is one of the largest problems in the co-firing cell fabrication process because it prohibits the sintering of the separator.     

Conductivity of Manganite Films under the Action of Tension Caused by the Deformation of Substrate

Physics of the Solid State - The electron transport properties of strained thin La0.7Ba0.3MnO3 (LBMO) epitaxial films are studied. Films 40–100 nm in thickness were prepared by laser ablation...     

SUPERCONDUCTING PROPERTIES AND STRUCTURAL PERFECTION OF EPITAXIAL YBa2Cu3O7-x THIN FILMS

High quality epitaxial YBa₂Cu₃O_7-x thin films have been succcessfully prepared by dc magnetron sputtering deposition, on (100) and (110) aligned SrTiO₃, LaAlO₃ and yttria-stabilized zirconia (YSZ) substrates. The films showed zero resistance around 90 K and had a J_c (at 77 K, H=0) over 10⁶A/cm². It was found that superconducting properties and structures of the films were strongly dependent on oxygen pressure and substrate temperature. The epitaxial structure of the films have been studied by X-ray diffraction. Rutherford backscattering and channeling spectroscopy, X-ray double-crystal diffraction and transmission election microscopy. The experimental results demonstrated that the epitaxial YBa₂Cu₃O_7-x films had excellent superconducting properties and quite perfect structure.     

Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films

ZnO films were prepared on (1 1 1) YSZ and (0 0 0 1) sapphire by pulsed laser deposition method. Effect of lattice mismatch on the carrier transport properties of ZnO epitaxial thin films was investigated. The carrier mobility of the ZnO films on YSZ was larger than that of ZnO/sapphire due to smaller lattice mismatch when the thickness was below 150 nm. The effect of electrically degenerated layer on the carrier transport property increased with decreasing the film thickness of ZnO film. The carrier density and electron mobility of 20 nm-thick-ZnO film on either substrate were regardless of the temperature. We concluded that the dominant carrier scattering mechanism in ZnO ultra thin films is double Schottky barriers at the grain boundary and that their height depends on the carrier concentration.     

Y2O3稳定ZrO2薄膜的结构和光学特性

用电子束蒸发法制备出四种不同Y2O3含量的Y2O3稳定ZrO2（YSZ）薄膜,用X射线衍射和透射光谱测定薄膜的结构和光学性能.结果表明：随着Y2O3含量的增加,ZrO2薄膜从单斜相向高温相（四方相和立方相）转变,获得了结构稳定的YSZ薄膜；YSZ薄膜的晶粒尺寸都比ZrO2薄膜的大,但随着Y2O3加入量的增加,晶粒尺寸有减小的趋势,薄膜表面也趋向光滑平整.所有YSZ薄膜的透射谱线都与ZrO2薄膜相似,在可见光和红外光区都有较高的透过率.Y2O3的加入还可以改变薄膜的折射率,在一定范围内可得到所需的任意折射率.     

不同生长方向的La0.7Sr0.3MnO3薄膜结构及性能研究

利用磁控溅射方法,在(100),(110)和(111)LaAlO3(LAO)衬底上制备得到了不同生长方向的La0.7Sr0.3MnO3(LSMO)薄膜并对其结构及磁电学性能进行了系统研究.结果表明:LSMO薄膜完全按LAO衬底取向生长;(111)生长方向的薄膜由于晶格畸变程度最小,磁畴方向能较好的保持一致性,从而具有最大的磁饱和强度值;高的磁有序度减弱了巡游电子eg的自旋无序相关散射,有效降低了电阻.但外加磁场后电阻变化不明显,最大磁电阻值只有5.1%.     

Y2O3 stabilized ZrO2 thin films deposited by electron beam evaporation: Structural, morphological characterization and laser induced damage threshold

Four kinds of Y₂O₃ stabilized ZrO₂ (YSZ) thin films with different Y₂O₃ content have been prepared on BK7 substrates by electron-beam evaporation method. Structural properties and surface morphology of thin films were investigated by X-ray diffraction (XRD) spectra and scanning probe microscope. Laser induced damage threshold (LIDT) was determined. It was found that crystalline phase and microstructure of YSZ thin films was dependent on Y₂O₃ molar content. YSZ thin films changed from monoclinic phase to high temperature phase (tetragonal and cubic) with the increase of Y₂O₃ content. The LIDT of stabilized thin film is more than that of unstabilized thin films. The reason is that ZrO₂ material undergoes phase transition during the course of e-beam evaporation resulting in more numbers of defects compared to that of YSZ thin films. These defects act as absorptive center and the original breakdown points.